HIGH TEMPERATURE GaAlAs IR EMITTERS OD-850LHT FEATURES • Extended operating temperature range • No internal coatings • No derating or heat sink required to 80°C • Standard 2-lead TO-46 hermetic package All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C TEST CONDITIONS MIN TYP Total Power Output, Po PARAMETERS IF = 100mA 18 25 MAX UNITS mW Peak Emission Wavelength, λP IF = 20mA 850 nm Spectral Bandwidth at 50%, Δλ IF = 20mA 40 nm Half Intensity Beam Angle, θ IF = 20mA 35 Deg Forward Voltage, VF IF = 100mA 1.6 Volts Reverse Breakdown Voltage, VR IR = 10μA 5 2 30 Volts Rise Time IFP = 20mA 20 nsec Fall Time IFP = 20mA 20 nsec ABSOLUTE MAXIMUM RATINGS AT 25°C CASE Power Dissipation1 200mW Continuous Forward Current 100mA Peak Forward Current (10μs, 200Hz)2 300mA Reverse Voltage 5V Lead Soldering Temperature (1/16" from case for 10sec) 1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C 260°C THERMAL PARAMETERS Storage and Operating Temperature Range -65°C to 150°C Maximum Junction Temperature 150°C Thermal Resistance, RTHJA1 400°C/W Typical Thermal Resistance, RTHJA2 135°C/W Typical 1Heat 2Air transfer minimized by measuring in still air with minimum heat conducting through leads circulating at a rapid rate to keep case temperature at 25°C 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013 HIGH TEMPERATURE GaAlAs IR EMITTERS 200 OD-850LHT THERMAL DERATING CURVE POWER DISSIPATION (mW) MAXIMUM RATINGS 180 INFINITE HEAT SINK 160 140 NO HEAT SINK 120 100 80 60 40 20 0 25 50 75 100 AMBIENT TEMPERATURE (°C) 120 150 POWER OUTPUT vs TEMPERATURE 1.5 1.4 80 RELATIVE POWER OUTPUT RELATIVE POWER OUTPUT (%) TYPICAL CHARACTERISTICS RADIATION PATTERN 100 60 40 20 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0 –50 –40 –30 –20 –10 0 10 20 BEAM ANGLE, θ(deg) 30 40 0.5 –50 50 SPECTRAL OUTPUT 100 0 25 50 AMBIENT TEMPERATURE (°C) 75 100 POWER OUTPUT vs FORWARD CURRENT 80 POWER OUTPUT, Po (mW) RELATIVE POWER OUTPUT (%) 100 –25 60 40 10 DC 20 0 750 800 850 WAVELENGTH, λ(nm) 900 950 1 10 100 FORWARD CURRENT, IF (mA) 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013