Micross LSU405 Low noise, low drift, monolithic dual n-channel jfet Datasheet

LSU405
LOW NOISE, LOW DRIFT
MONOLITHIC DUAL
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix U405 with LSU405
The U405/ LSU405 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET
The LSU405 is a high-performance monolithic dual
JFET featuring extremely low noise, tight offset voltage
and low drift over temperature specifications, and is
targeted for use in a wide range of precision
instrumentation applications. The LSU405 features a 5mV offset and 10-µV/°C drift. The LSU405 is a direct
replacement for discontinued Siliconix U405.
The hermetically sealed TO-71 & TO-78 packages are
well suited for military applications. .
(See Packaging Information).
U405 / LSU405 Applications:
ƒ
ƒ
ƒ
ƒ
Wideband Differential Amps
High-Speed,Temp-Compensated SingleEnded Input Amps
High-Speed Comparators
Impedance Converters and vibrations
detectors.
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
BVGSS
Breakdown Voltage
50
BVGGO
Gate‐To‐Gate Breakdown
±50
TRANSCONDUCTANCE
YfSS
Full Conduction
2000
YfS
Typical Operation
1000
|YFS1‐2 / Y FS|
Mismatch
‐‐
DRAIN CURRENT
IDSS
Full Conduction
0.5
|IDSS1‐2 / IDSS|
Mismatch at Full Conduction
‐‐
GATE VOLTAGE
VGS(off) or Vp
Pinchoff voltage
‐0.5
VGS(on)
Operating Range
‐‐
GATE CURRENT
‐IGmax.
Operating
‐‐
‐IGmax.
High Temperature
‐‐
‐IGSSmax.
At Full Conduction
‐‐
‐IGSSmax.
High Temperature
5
OUTPUT CONDUCTANCE
YOSS
Full Conduction
‐‐
YOS
Operating
‐‐
COMMON MODE REJECTION
CMR
‐20 log | V GS1‐2/ V DS|
95
NOISE
NF
Figure
‐‐
en
Voltage
‐‐
CAPACITANCE
CISS
Input
‐‐
CRSS
Reverse Transfer
‐‐
FEATURES
LOW DRIFT
LOW NOISE
LOW PINCHOFF
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted)
| V GS1‐2 / T| = 10µV/°C TYP.
en = 6nV/Hz @ 10Hz TYP.
Vp = 2.5V TYP.
Maximum Temperatures
Storage Temperature
‐65°C to +150°C
Operating Junction Temperature
+150°C
Maximum Voltage and Current for Each Transistor – Note 1
‐VGSS
Gate Voltage to Drain or Source
50V
‐VDSO
Drain to Source Voltage
50V
‐IG(f)
Gate Forward Current
10mA
Maximum Power Dissipation
Device Dissipation @ Free Air – Total
300mW
MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED
SYMBOL
CHARACTERISTICS VALUE UNITS CONDITIONS
| V GS1‐2 / T| max.
DRIFT VS.
40
µV/°C
VDG=10V, ID=200µA
TEMPERATURE
TA=‐55°C to +125°C
| V GS1‐2 | max.
OFFSET VOLTAGE
20
mV
VDG=10V, ID=200µA
TYP.
60
‐‐
MAX.
‐‐
‐‐
UNITS
V
V
CONDITIONS
VDS = 0
ID=1nA
I G= 1nA
ID= 0
I S= 0
‐‐
‐‐
0.6
7000
2000
3
µmho
µmho
%
VDG= 10V
VDG= 15V
‐‐
1
10
5
mA
%
VDG= 10V
VGS= 0V
‐‐
‐‐
‐2.5
‐2.3
V
V
VDS= 15V
VDS=15V
ID= 1nA
ID=200µA
‐4
‐‐
‐‐
5
‐15
‐10
100
5
pA
nA
pA
pA
‐‐
0.2
20
2
µmho
µmho
‐‐
‐‐
dB
‐‐
20
0.5
‐‐
dB
nV/√Hz
‐‐
‐‐
8
1.5
pF
pF
Click To Buy
Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired
TO-71 / TO-78 (Top View)
VGS= 0V f = 1kHz
ID= 200µA f = 1kHz
VDG= 15V ID= 200µA
TA= +125°C
VDS =0
VDG= 15V
TA= +125°C
VDG= 10V
VDG= 15V
VGS= 0V
ID= 500µA
VDS = 10 to 20V
ID=30µA
VDS= 15V VGS= 0V
RG= 10M
f= 100Hz
NBW= 6Hz
VDS=15V ID=200µA f=10Hz NBW=1Hz
VDS= 15V
ID= 200µA
f= 1MHz
Micross Components Europe
Available Packages:
U405 / LSU405 in TO-71 & TO-78
U405 / LSU405 available as bare die
Please contact Micross for full package and die dimensions
Tel: +44 1603 788967
Email: [email protected]
Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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