TI1 DRV8814PWPR Dc motor driver ic 2.5-a maximum drive current at 24 v, 25â°c Datasheet

DRV8814
SLVSAB9C – MAY 2010 – REVISED MARCH 2011
www.ti.com
DC MOTOR DRIVER IC
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FEATURES
1
•
2
•
•
•
Dual H-Bridge Current-Control Motor Driver
– Drives Two DC Motors
– Brake Mode
– Two-Bit Winding Current Control Allows Up
to 4 Current Levels
– Low MOSFET On-Resistance
2.5-A Maximum Drive Current at 24 V, 25°C
Built-In 3.3-V Reference Output
Industry Standard Parallel Digital Control
Interface
•
•
8-V to 45-V Operating Supply Voltage Range
Thermally Enhanced Surface Mount Package
APPLICATIONS
•
•
•
•
•
•
Printers
Scanners
Office Automation Machines
Gaming Machines
Factory Automation
Robotics
DESCRIPTION
The DRV8814 provides an integrated motor driver solution for printers, scanners, and other automated
equipment applications. The device has two H-bridge drivers, and is intended to drive DC motors. The output
driver block for each consists of N-channel power MOSFET’s configured as H-bridges to drive the motor
windings. The DRV8814 can supply up to 2.5-A peak or 1.75-A RMS output current (with proper heatsinking at
24 V and 25°C) per H-bridge.
A simple parallel digital control interface is compatible with industry-standard devices. Decay mode is
programmable to allow braking or coasting of the motor when disabled.
Internal shutdown functions are provided for over current protection, short circuit protection, under voltage
lockout and overtemperature.
TheDRV8814 is available in a 28-pin HTSSOP package with PowerPAD™ (Eco-friendly: RoHS & no Sb/Br).
ORDERING INFORMATION (1)
TA
–40°C to 85°C
(1)
(2)
PACKAGE (2)
PowerPAD™ (HTSSOP) - PWP
Reel of 2000
ORDERABLE PART
NUMBER
TOP-SIDE
MARKING
DRV8814PWPR
8814
For the most current packaging and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerPAD is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2010–2011, Texas Instruments Incorporated
DRV8814
SLVSAB9C – MAY 2010 – REVISED MARCH 2011
www.ti.com
DEVICE INFORMATION
Functional Block Diagram
VM
VM
Internal
Reference &
Regs
3.3V
Int. VCC
CP1
LS Gate
Drive
0.01mF
Charge
Pump
V3P3OUT
CP2
3.3V
VM
VCP
Thermal
Shut down
0.1mF
HS Gate
Drive
AVREF
VM
VMA
BVREF
AOUT1
Motor
Driver A
APHASE
AENBL
DCM
AOUT2
AI0
ISENA
AI1
BPHASE
BENBL
BI0
Control
Logic
VM
VMB
BI1
BOUT1
DECAY
Motor
Driver B
nRESET
DCM
BOUT2
nSLEEP
ISENB
nFAULT
GND
2
GND
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Table 1. TERMINAL FUNCTIONS
NAME
PIN
I/O (1)
EXTERNAL COMPONENTS
OR CONNECTIONS
DESCRIPTION
POWER AND GROUND
GND
14, 28
-
Device ground
VMA
4
-
Bridge A power supply
VMB
11
-
Bridge B power supply
V3P3OUT
15
O
3.3-V regulator output
CP1
1
IO
Charge pump flying capacitor
CP2
2
IO
Charge pump flying capacitor
VCP
3
IO
High-side gate drive voltage
Connect a 0.1-μF 16-V ceramic capacitor to
VM.
AENBL
21
I
Bridge A enable
Logic high to enable bridge A
APHASE
20
I
Bridge A phase (direction)
Logic high sets AOUT1 high, AOUT2 low
AI0
24
I
AI1
25
I
Bridge A current set
Sets bridge A current: 00 = 100%,
01 = 71%, 10 = 38%, 11 = 0
BENBL
22
I
Bridge B enable
Logic high to enable bridge B
BPHASE
23
I
Bridge B phase (direction)
Logic high sets BOUT1 high, BOUT2 low
BI0
26
I
BI1
27
I
Bridge B current set
Sets bridge B current: 00 = 100%,
01 = 71%, 10 = 38%, 11 = 0
DECAY
19
I
Decay (brake) mode
Low = brake (slow decay),
high = coast (fast decay)
nRESET
16
I
Reset input
Active-low reset input initializes internal logic
and disables the H-bridge outputs
nSLEEP
17
I
Sleep mode input
Logic high to enable device, logic low to enter
low-power sleep mode
AVREF
12
I
Bridge A current set reference input
BVREF
13
I
Bridge B current set reference input
18
OD
Fault
Logic low when in fault condition (overtemp,
overcurrent)
ISENA
6
IO
Bridge A ground / Isense
Connect to current sense resistor for bridge A
ISENB
9
IO
Bridge B ground / Isense
Connect to current sense resistor for bridge B
AOUT1
5
O
Bridge A output 1
AOUT2
7
O
Bridge A output 2
BOUT1
10
O
Bridge B output 1
BOUT2
8
O
Bridge B output 2
Connect to motor supply (8 - 45 V). Both pins
must be connected to same supply.
Bypass to GND with a 0.47-μF 6.3-V ceramic
capacitor. Can be used to supply VREF.
Connect a 0.01-μF 50-V capacitor between
CP1 and CP2.
CONTROL
Reference voltage for winding current set.
Can be driven individually with an external
DAC for microstepping, or tied to a reference
(e.g., V3P3OUT).
STATUS
nFAULT
OUTPUT
(1)
Connect to motor winding A
Connect to motor winding B
Directions: I = input, O = output, OZ = tri-state output, OD = open-drain output, IO = input/output
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DRV8814
SLVSAB9C – MAY 2010 – REVISED MARCH 2011
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PWP PACKAGE
(TOP VIEW)
CP1
CP2
VCP
VMA
AOUT1
ISENA
AOUT2
BOUT2
ISENB
BOUT1
VMB
AVREF
BVREF
GND
1
28
2
27
3
4
26
5
24
25
6
7
8
23
GND
(PPAD)
22
21
9
20
10
19
11
18
12
17
13
16
14
15
GND
BI1
BI0
AI1
AI0
BPHASE
BENBL
AENBL
APHASE
DECAY
nFAULT
nSLEEP
nRESET
V3P3OUT
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted)
VMx
VREF
(1) (2)
VALUE
UNIT
Power supply voltage range
–0.3 to 47
V
Digital pin voltage range
–0.5 to 7
V
Input voltage
–0.3 to 4
V
–0.3 to 0.8
V
Peak motor drive output current, t < 1 μS
Internally limited
A
Continuous motor drive output current (3)
2.5
A
ISENSEx pin voltage
Continuous total power dissipation
See Dissipation Ratings table
TJ
Operating virtual junction temperature range
–40 to 150
°C
TA
Operating ambient temperature range
–40 to 85
°C
Tstg
Storage temperature range
–60 to 150
°C
(1)
(2)
(3)
4
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.
All voltage values are with respect to network ground terminal.
Power dissipation and thermal limits must be observed.
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SLVSAB9C – MAY 2010 – REVISED MARCH 2011
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THERMAL INFORMATION
DRV8814
THERMAL METRIC (1)
PWP
UNITS
28 PINS
Junction-to-ambient thermal resistance (2)
θJA
31.6
(3)
θJCtop
Junction-to-case (top) thermal resistance
θJB
Junction-to-board thermal resistance (4)
5.6
ψJT
Junction-to-top characterization parameter (5)
0.2
ψJB
Junction-to-board characterization parameter (6)
5.5
θJCbot
Junction-to-case (bottom) thermal resistance (7)
1.4
(1)
(2)
(3)
(4)
(5)
(6)
(7)
15.9
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as
specified in JESD51-7, in an environment described in JESD51-2a.
The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific
JEDEC-standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB
temperature, as described in JESD51-8.
The junction-to-top characterization parameter, ψJT, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7).
The junction-to-board characterization parameter, ψJB, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining θJA , using a procedure described in JESD51-2a (sections 6 and 7).
The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific
JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VM
Motor power supply voltage range (1)
8
45
V
VREF
VREF input voltage (2)
1
3.5
V
IV3P3
V3P3OUT load current
0
1
mA
fPWM
Externally applied PWM frequency
0
100
kHz
(1)
(2)
All VM pins must be connected to the same supply voltage.
Operational at VREF between 0 V and 1 V, but accuracy is degraded.
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DRV8814
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ELECTRICAL CHARACTERISTICS
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
POWER SUPPLIES
IVM
VM operating supply current
VM = 24 V, fPWM < 50 kHz
5
8
mA
IVMQ
VM sleep mode supply current
VM = 24 V
10
20
μA
VUVLO
VM undervoltage lockout voltage
VM rising
7.8
8.2
V
3.3
3.4
V
V3P3OUT REGULATOR
V3P3
V3P3OUT voltage
IOUT = 0 to 1 mA
3.2
LOGIC-LEVEL INPUTS
VIL
Input low voltage
VIH
Input high voltage
0.6
VHYS
Input hysteresis
IIL
Input low current
VIN = 0
IIH
Input high current
VIN = 3.3 V
0.7
V
5.25
V
0.45
0.6
V
20
μA
33
100
μA
0.5
V
1
μA
0.8
V
±40
μA
2
0.3
–20
nFAULT OUTPUT (OPEN-DRAIN OUTPUT)
VOL
Output low voltage
IO = 5 mA
IOH
Output high leakage current
VO = 3.3 V
DECAY INPUT
VIL
Input low threshold voltage
For slow decay (brake) mode
0
VIH
Input high threshold voltage
For fast decay (coast) mode
2
IIN
Input current
VIN = 0 V to 3.3 V
V
H-BRIDGE FETS
RDS(ON)
HS FET on resistance
RDS(ON)
LS FET on resistance
IOFF
Off-state leakage current
VM = 24 V, IO = 1 A, TJ = 25°C
0.2
VM = 24 V, IO = 1 A, TJ = 85°C
0.25
VM = 24 V, IO = 1 A, TJ = 25°C
0.2
VM = 24 V, IO = 1 A, TJ = 85°C
0.25
–20
0.32
0.32
20
Ω
Ω
μA
MOTOR DRIVER
fPWM
Internal current control PWM
frequency
tBLANK
Current sense blanking time
tR
Rise time
50
300
ns
tF
Fall time
50
300
ns
160
180
°C
3
μA
50
kHz
μs
3.75
PROTECTION CIRCUITS
IOCP
Overcurrent protection trip level
tTSD
Thermal shutdown temperature
3
Die temperature
150
A
CURRENT CONTROL
IREF
VREF input current
VTRIP
xISENSE trip voltage
AISENSE
6
Current sense amplifier gain
VREF = 3.3 V
–3
xVREF = 3.3 V, 100% current setting
635
660
685
xVREF = 3.3 V, 71% current setting
445
469
492
xVREF = 3.3 V, 38% current setting
225
251
276
Reference only
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5
mV
V/V
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Product Folder Link(s): DRV8814
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SLVSAB9C – MAY 2010 – REVISED MARCH 2011
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FUNCTIONAL DESCRIPTION
PWM Motor Drivers
The DRV8814 contains two H-bridge motor drivers with current-control PWM circuitry. A block diagram of the
motor control circuitry is shown in Figure 1.
VM
OCP
VM
VCP, VGD
AOUT1
Predrive
AENBL
DCM
APHASE
AOUT2
DECAY
PWM
OCP
AISEN
+
AI[1:0]
A=5
DAC
2
AVREF
VM
OCP
VM
VCP, VGD
BOUT1
Predrive
BENBL
DCM
BPHASE
BOUT2
PWM
OCP
BISEN
+
BI[1:0]
A =5
DAC
2
BVREF
Figure 1. Motor Control Circuitry
Note that there are multiple VM pins. All VM pins must be connected together to the motor supply voltage.
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Bridge Control
The xPHASE input pins control the direction of current flow through each H-bridge, and hence the direction of
rotation of a DC motor. The xENBL input pins enable the H-bridge outputs when active high, and can also be
used for PWM speed control of the motor. Note that the state of the DECAY pin selects the behavior of the
bridge when xENBL = 0, allowing the selection of slow decay (brake) or fast decay (coast). Table 2 shows the
logic.
Table 2. H-Bridge Logic
DECAY
xENBL
xPHASE
xOUT1
xOUT2
0
0
X
L
L
Z
1
0
X
Z
X
1
1
H
L
X
1
0
L
H
Current Regulation
The maximum current through the motor winding is regulated by a fixed-frequency PWM current regulation, or
current chopping. When the H-bridge is enabled, current rises through the winding at a rate dependent on the
DC voltage and inductance of the winding. Once the current hits the current chopping threshold, the bridge
disables the current until the beginning of the next PWM cycle.
For DC motors, current regulation is used to limit the start-up and stall current of the motor. Speed control is
typically performed by providing an external PWM signal to the ENBLx input pins.
If the current regulation feature is not needed, it can be disabled by connecting the xISENSE pins directly to
ground, and connecting the xVREF pins to V3P3.
The PWM chopping current is set by a comparator which compares the voltage across a current sense resistor
connected to the xISEN pins, multiplied by a factor of 5, with a reference voltage. The reference voltage is input
from the xVREF pins, and is scaled by a 2-bit DAC that allows current settings of 100%, 71%, 38% of full-scale,
plus zero.
The full-scale (100%) chopping current is calculated in Equation 1.
VREFX
ICHOP = 5¾
· RISENSE
(1)
Example:
If a 0.25-Ω sense resistor is used and the VREFx pin is 2.5 V, the full-scale (100%) chopping current will be
2.5 V / (5 x 0.25 Ω) = 2 A.
Two input pins per H-bridge (xI1 and xI0) are used to scale the current in each bridge as a percentage of the
full-scale current set by the VREF input pin and sense resistance. The function of the pins is shown in Table 3.
Table 3. H-Bridge Pin Functions
xI1
xI0
RELATIVE CURRENT
(% FULL-SCALE CHOPPING CURRENT)
1
1
0% (Bridge disabled)
1
0
38%
0
1
71%
0
0
100%
Note that when both xI bits are 1, the H-bridge is disabled and no current flows.
Example:
If a 0.25-Ω sense resistor is used and the VREF pin is 2.5 V, the chopping current will be 2 A at the 100%
setting (xI1, xI0 = 00). At the 71% setting (xI1, xI0 = 01) the current will be 2 A x 0.71 = 1.42 A, and at the
38% setting (xI1, xI0 = 10) the current will be 2 A x 0.38 = 0.76 A. If (xI1, xI0 = 11) the bridge will be disabled
and no current will flow.
8
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Decay Mode and Braking
During PWM current chopping, the H-bridge is enabled to drive current through the motor winding until the PWM
current chopping threshold is reached. This is shown in Figure 2 as case 1. The current flow direction shown
indicates the state when the xENBL pin is high.
Once the chopping current threshold is reached, the H-bridge can operate in two different states, fast decay or
slow decay.
In fast decay mode, once the PWM chopping current level has been reached, the H-bridge reverses state to
allow winding current to flow in a reverse direction. As the winding current approaches zero, the bridge is
disabled to prevent any reverse current flow. Fast decay mode is shown in Figure 2 as case 2.
In slow decay mode, winding current is re-circulated by enabling both of the low-side FETs in the bridge. This is
shown in Figure 2 as case 3.
Figure 2. Decay Mode
The DRV8814 supports fast decay and slow decay mode. Slow or fast decay mode is selected by the state of
the DECAY pin - logic low selects slow decay, and logic high sets fast decay mode. Note that the DECAY pin
sets the decay mode for both H-bridges.
DECAY mode also affects the operation of the bridge when it is disabled (by taking the ENBL pin inactive). This
applies if the ENABLE input is being used for PWM speed control of the motor, or if it is simply being used to
start and stop motor rotation.
If the DECAY pin is high (fast decay), when the bridge is disabled fast decay mode will be entered until the
current through the bridge reaches zero. Once the current is at zero, the bridge is disabled to prevent the motor
from reversing direction. This allows the motor to coast to a stop.
If the DECAY pin is low (slow decay), both low-side FETs will be turned on when ENBL is made inactive. This
essentially shorts out the back EMF of the motor, causing the motor to brake, and stop quickly. The low-side
FETs will stay in the ON state even after the current reaches zero.
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Blanking Time
After the current is enabled in an H-bridge, the voltage on the xISEN pin is ignored for a fixed period of time
before enabling the current sense circuitry. This blanking time is fixed at 3.75 μs. Note that the blanking time also
sets the minimum on time of the PWM.
nRESET and nSLEEP Operation
The nRESET pin, when driven active low, resets the internal logic. It also disables the H-bridge drivers. All inputs
are ignored while nRESET is active.
Driving nSLEEP low will put the device into a low power sleep state. In this state, the H-bridges are disabled, the
gate drive charge pump is stopped, the V3P3OUT regulator is disabled, and all internal clocks are stopped. In
this state all inputs are ignored until nSLEEP returns inactive high. When returning from sleep mode, some time
(approximately 1 ms) needs to pass before the motor driver becomes fully operational.
Protection Circuits
The DRV8814 is fully protected against undervoltage, overcurrent and overtemperature events.
Overcurrent Protection (OCP)
An analog current limit circuit on each FET limits the current through the FET by removing the gate drive. If this
analog current limit persists for longer than the OCP time, all FETs in the H-bridge will be disabled and the
nFAULT pin will be driven low. The device will remain disabled until either nRESET pin is applied, or VM is
removed and re-applied.
Overcurrent conditions on both high and low side devices; i.e., a short to ground, supply, or across the motor
winding will all result in an overcurrent shutdown. Note that overcurrent protection does not use the current sense
circuitry used for PWM current control, and is independent of the ISENSE resistor value or VREF voltage.
Thermal Shutdown (TSD)
If the die temperature exceeds safe limits, all FETs in the H-bridge will be disabled and the nFAULT pin will be
driven low. Once the die temperature has fallen to a safe level operation will automatically resume.
Undervoltage Lockout (UVLO)
If at any time the voltage on the VM pins falls below the undervoltage lockout threshold voltage, all circuitry in the
device will be disabled and internal logic will be reset. Operation will resume when VM rises above the UVLO
threshold.
10
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THERMAL INFORMATION
Thermal Protection
The DRV8814 has thermal shutdown (TSD) as described above. If the die temperature exceeds approximately
150°C, the device will be disabled until the temperature drops to a safe level.
Any tendency of the device to enter TSD is an indication of either excessive power dissipation, insufficient
heatsinking, or too high an ambient temperature.
Power Dissipation
Power dissipation in the DRV8814 is dominated by the power dissipated in the output FET resistance, or
RDS(ON). Average power dissipation of each H-bridge when running a DC motor can be roughly estimated by
Equation 2.
P = 2 · RDS(ON) · (IOUT)2
(2)
where P is the power dissipation of one H-bridge, RDS(ON) is the resistance of each FET, and IOUT is the RMS
output current being applied to each winding. IOUT is equal to the average current drawn by the DC motor. Note
that at start-up and fault conditions this current is much higher than normal running current; these peak currents
and their duration also need to be taken into consideration. The factor of 2 comes from the fact that at any
instant two FETs are conducting winding current (one high-side and one low-side).
The total device dissipation will be the power dissipated in each of the two H-bridges added together.
The maximum amount of power that can be dissipated in the device is dependent on ambient temperature and
heatsinking.
Note that RDS(ON) increases with temperature, so as the device heats, the power dissipation increases. This must
be taken into consideration when sizing the heatsink.
Heatsinking
The PowerPAD™ package uses an exposed pad to remove heat from the device. For proper operation, this pad
must be thermally connected to copper on the PCB to dissipate heat. On a multi-layer PCB with a ground plane,
this can be accomplished by adding a number of vias to connect the thermal pad to the ground plane. On PCBs
without internal planes, copper area can be added on either side of the PCB to dissipate heat. If the copper area
is on the opposite side of the PCB from the device, thermal vias are used to transfer the heat between top and
bottom layers.
For details about how to design the PCB, refer to TI application report SLMA002, " PowerPAD™ Thermally
Enhanced Package" and TI application brief SLMA004, " PowerPAD™ Made Easy", available at www.ti.com.
In general, the more copper area that can be provided, the more power can be dissipated.
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PACKAGE OPTION ADDENDUM
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28-Mar-2011
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package
Drawing
Pins
Package Qty
Eco Plan
(2)
Lead/
Ball Finish
MSL Peak Temp
(3)
DRV8814PWP
ACTIVE
HTSSOP
PWP
28
50
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-3-260C-168 HR
DRV8814PWPR
ACTIVE
HTSSOP
PWP
28
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-3-260C-168 HR
Samples
(Requires Login)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
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Addendum-Page 1
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