AMD AM29F040B-70ED 4 megabit (512 k x 8-bit) cmos 5.0 volt-only, uniform sector flash memory Datasheet

Am29F040B
Data Sheet
The following document contains information on Spansion memory products.
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal data sheet improvement and are noted in the
document revision summary.
For More Information
Please contact your local sales office for additional information about Spansion memory solutions.
Publication Number 21445 Revision E
Amendment 5 Issue Date November 1, 2006
THIS PAGE LEFT INTENTIONALLY BLANK.
DATA SHEET
Am29F040B
4 Megabit (512 K x 8-Bit)
CMOS 5.0 Volt-only, Uniform Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
•
5.0 V ± 10% for read and write operations
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Minimizes system level power requirements
•
Manufactured on 0.32 µm process technology
— Embedded Program algorithm automatically
writes and verifies bytes at specified addresses
— Compatible with 0.5 µm Am29F040 device
•
High performance
•
Minimum 1,000,000 program/erase cycles per
sector guaranteed
•
20-year data retention at 125°C
— Access times as fast as 55 ns
•
Low power consumption
— Reliable operation for the life of the system
— 20 mA typical active read current
— 30 mA typical program/erase current
— 1 µA typical standby current (standard access
time to active mode)
•
•
— 32-pin PLCC, TSOP, or PDIP
•
Flexible sector architecture
Compatible with JEDEC standards
— 8 uniform sectors of 64 Kbytes each
— Pinout and software compatible with
single-power-supply Flash standard
— Any combination of sectors can be erased
— Superior inadvertent write protection
— Supports full chip erase
•
— Sector protection:
A hardware method of locking sectors to prevent
any program or erase operations within that sector
•
Package options
Embedded Algorithms
Data# Polling and toggle bits
— Provides a software method of detecting
program or erase cycle completion
•
Erase Suspend/Erase Resume
— Suspends a sector erase operation to read data
from, or program data to, a non-erasing sector,
then resumes the erase operation
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# 21445 Rev: E Amendment: 5
Issue Date: November 1, 2006
D A T A
S H E E T
GENERAL DESCRIPTION
The Am29F040B is a 4 Mbit, 5.0 volt-only Flash memory organized as 524,288 Kbytes of 8 bits each. The
512 Kbytes of data are divided into eight sectors of 64
Kbytes each for flexible erase capability. The 8 bits of
data appear on DQ0–DQ7. The Am29F040B is offered
in 32-pin PLCC, TSOP, and PDIP packages. This device
is designed to be programmed in-system with the standard system 5.0 volt VCC supply. A 12.0 volt VPP is not
required for write or erase operations. The device can
also be programmed in standard EPROM programmers.
This device is manufactured using AMD’s 0.32 µm process technology, and offers all the features and
benefits of the Am29F040, which was manufactured
using 0.5 µm process technology. In addtion, the
Am29F040B has a second toggle bit, DQ2, and also offers the ability to program in the Erase Suspend mode.
The standard Am29F040B offers access times of 55,
70, 90, and 120 ns, allowing high-speed microprocessors to operate without wait states. To eliminate bus
contention the device has separate chip enable (CE#),
write enable (WE#) and output enable (OE#) controls.
The device requires only a single 5.0 volt power supply for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard. Commands are written to the command register using
standard microprocessor write timings. Register contents serve as input to an internal state-machine that
controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed
for the programming and erase operations. Reading
data out of the device is similar to reading from other
Flash or EPROM devices.
Device programming occurs by executing the program
command sequence. This initiates the Embedded
Program algorithm—an internal algorithm that auto-
2
matically times the program pulse widths and verifies
proper cell margin.
Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase
algorithm—an internal algorithm that automatically
preprograms the array (if it is not already programmed)
before executing the erase operation. During erase, the
device automatically times the erase pulse widths and
verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by reading the DQ7 (Data#
Polling) and DQ6 (toggle) status bits. After a program
or erase cycle has been completed, the device is ready
to read array data or accept another command.
The sector erase architecture allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low
VCC detector that automatically inhibits write operations during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of the sectors of memory. This can be achieved via programming equipment.
The Erase Suspend feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved.
The system can place the device into the standby mode.
Power consumption is greatly reduced in this mode.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a
sector simultaneously via Fowler-Nordheim tunneling.
The data is programmed using hot electron injection.
Am29F040B
21445E5 November 1, 2006
D A T A
S H E E T
TABLE OF CONTENTS
Product Selector Guide . . . . . . . . . . . . . . . . . . . . .
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . .
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . .
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Ordering Information . . . . . . . . . . . . . . . . . . . . . . .
Device Bus Operations . . . . . . . . . . . . . . . . . . . . .
4
4
5
5
5
6
7
Table 1. Am29F040B Device Bus Operations ...................................7
Requirements for Reading Array Data .....................................
Writing Commands/Command Sequences ..............................
Program and Erase Operation Status ......................................
Standby Mode ..........................................................................
Output Disable Mode................................................................
7
7
7
7
8
Table 2. Sector Addresses Table ......................................................8
Autoselect Mode....................................................................... 9
Table 3. Am29F040B Autoselect Codes (High Voltage Method) .......9
Sector Protection/Unprotection................................................. 9
Hardware Data Protection ........................................................ 9
Low VCC Write Inhibit ........................................................................ 9
Write Pulse “Glitch” Protection.......................................................... 9
Logical Inhibit .................................................................................... 9
Power-Up Write Inhibit ...................................................................... 9
Command Definitions . . . . . . . . . . . . . . . . . . . . . 10
Reading Array Data ................................................................ 10
Reset Command..................................................................... 10
Autoselect Command Sequence ............................................ 10
Byte Program Command Sequence....................................... 10
Figure 1. Program Operation ......................................................... 11
Chip Erase Command Sequence ........................................... 11
Sector Erase Command Sequence ........................................ 11
Erase Suspend/Erase Resume Commands........................... 12
Figure 2. Erase Operation.............................................................. 12
Command Definitions ............................................................. 13
Table 4. Am29F040B Command Definitions....................................13
Write Operation Status . . . . . . . . . . . . . . . . . . . . 14
DQ7: Data# Polling................................................................. 14
Figure 3. Data# Polling Algorithm .................................................. 14
DQ6: Toggle Bit I .................................................................... 15
DQ2: Toggle Bit II ................................................................... 15
Reading Toggle Bits DQ6/DQ2 .............................................. 15
November 1, 2006 21445E5
DQ5: Exceeded Timing Limits ................................................ 15
DQ3: Sector Erase Timer ....................................................... 16
Figure 4. Toggle Bit Algorithm....................................................... 16
Table 5. Write Operation Status...................................................... 17
Absolute Maximum Ratings. . . . . . . . . . . . . . . . . 18
Figure 5. Maximum Negative Overshoot Waveform ..................... 18
Figure 6. Maximum Positive Overshoot Waveform....................... 18
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . 18
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 19
TTL/NMOS Compatible .......................................................... 19
CMOS Compatible.................................................................. 19
Test Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 7. Test Setup..................................................................... 20
Table 6. Test Specifications ........................................................... 20
Key to Switching Waveforms. . . . . . . . . . . . . . . . 20
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 21
Read Only Operations ............................................................ 21
Figure 8. Read Operation Timings ................................................ 21
Erase and Program Operations.............................................. 22
Figure 9. Program Operation Timings...........................................
Figure 10. Chip/Sector Erase Operation Timings .........................
Figure 11. Data# Polling Timings (During Embedded Algorithms)
Figure 12. Toggle Bit Timings (During Embedded Algorithms).....
Figure 13. DQ2 vs. DQ6................................................................
23
23
24
24
25
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 26
Erase and Program Operations.............................................. 26
Alternate CE# Controlled Writes .................................................... 26
Figure 14. Alternate CE# Controlled Write Operation Timings ..... 27
Erase and Programming Performance . . . . . . . . 28
Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 28
TSOP Pin Capacitance . . . . . . . . . . . . . . . . . . . . 28
PLCC and PDIP Pin Capacitance. . . . . . . . . . . . . 29
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 30
PD 032—32-Pin Plastic DIP ................................................... 30
PL 032—32-Pin Plastic Leaded Chip Carrier ......................... 31
TS 032—32-Pin Standard Thin Small Package...................... 32
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 33
Am29F040B
3
D A T A
S H E E T
PRODUCT SELECTOR GUIDE
Family Part Number
Am29F040B
VCC = 5.0 V ± 5%
Speed Option
-55
VCC = 5.0 V ± 10%
-70
-90
-120
Max access time, ns (tACC)
55
70
90
120
Max CE# access time, ns (tCE)
55
70
90
120
Max OE# access time, ns (tOE)
25
30
35
50
Note: See the “AC Characteristics” section for more information.
BLOCK DIAGRAM
DQ0–DQ7
VCC
VSS
WE#
Input/Output
Buffers
Erase Voltage
Generator
State
Control
Command
Register
PGM Voltage
Generator
Chip Enable
Output Enable
Logic
CE#
OE#
VCC Detector
Address Latch
STB
Timer
A0–A18
4
Am29F040B
STB
Data Latch
Y-Decoder
Y-Gating
X-Decoder
Cell Matrix
21445E5 November 1, 2006
D A T A
S H E E T
VCC
A16
2
31
WE#
A15
3
30
A17
A15
A16
A18
A12
4
29
A14
4
3
2
1 32 31 30
A7
5
28
A13
A7
5
29
A14
A6
6
27
A8
A6
6
28
A13
A5
7
26
A9
A5
7
27
A8
25
A11
A4
8
26
A9
A3
9
25
A11
A2
10
24
OE#
A1
11
23
A10
A0
12
22
CE#
DQ0
13
21
DQ7
10
23
A10
A1
11
22
CE#
A0
12
21
DQ7
DQ0
13
20
DQ6
DQ1
14
19
DQ5
DQ2
15
18
DQ4
VSS
16
17
DQ3
A11
A9
A8
A13
A14
A17
WE#
VCC
A18
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
14 15 16 17 18 19 20
32-Pin Standard TSOP
PIN CONFIGURATION
A0–A18
=
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
DQ6
A2
PLCC
DQ5
OE#
DQ4
24
VSS
9
DQ3
A3
PDIP
DQ2
8
DQ1
A4
A17
32
WE#
1
VCC
A18
A12
CONNECTION DIAGRAMS
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
VSS
DQ2
DQ1
DQ0
A0
A1
A2
A3
LOGIC SYMBOL
Address Inputs
DQ0–DQ7 =
Data Input/Output
CE#
=
Chip Enable
WE#
=
Write Enable
OE#
=
Output Enable
VSS
=
Device Ground
VCC
=+5.0 V single power supply
(see Product Selector Guide for
device speed ratings and voltage
supply tolerances)
November 1, 2006 21445E5
19
8
A0–A18
DQ0–DQ7
CE#
OE#
WE#
Am29F040B
5
D A T A
S H E E T
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the following:
Am29F040B
-55
E
C
TEMPERATURE RANGE
C = Commercial (0°C to +70°C)
I
= Industrial (–40°C to +85°C)
E = Extended (–55°C to +125°C)
D = Commercial (0°C to +70°C) for Pb-free Package
F = Industrial (-40°C to +85°C) for Pb-free Package
K = Extended (-55°C to +125°C) for Pb-free Package
PACKAGE TYPE
P = 32-Pin Plastic DIP (PD 032)
J
= 32-Pin Rectangular Plastic Leaded Chip Carrier (PL 032)
E = 32-Pin Thin Small Outline Package (TSOP) Standard Pinout (TS 032)
SPEED OPTION
See Product Selector Guide and Valid Combinations
DEVICE NUMBER/DESCRIPTION
Am29F040B
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Sector Erase Flash Memory
5.0 V Read, Program, and Erase
Valid Combinations
AM29F040B-55
AM29F040B-70
AM29F040B-90
AM29F040B-120
VCC Voltage
JC, JI, JE, JD, JF, JK
EC, ED, EI, EE, EF, EK
PC, PI, PE, PD, PF, PK,
JC, JI, JE, JD, JF, JK
EC, EI, EE, ED, EF, EK
5.0 V ± 5%
5.0 V ± 10%
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales office to
confirm availability of specific valid combinations and to check on newly released combinations.
6
Am29F040B
21445E5 November 1, 2006
D A T A
S H E E T
DEVICE BUS OPERATIONS
This section describes the requirements and use of the
device bus operations, which are initiated through the
internal command register. The command register itself does not occupy any addressable memor y
location. The register is composed of latches that store
the commands, along with the address and data infor-
Table 1.
mation needed to execute the command. The contents
of the register serve as inputs to the internal state machine. The state machine outputs dictate the function of
the device. The appropriate device bus operations
table lists the inputs and control levels required, and the
resulting output. The following subsections describe
each of these operations in further detail.
Am29F040B Device Bus Operations
Operation
CE#
OE#
WE#
A0–A20
DQ0–DQ7
Read
L
L
H
AIN
DOUT
Write
L
H
L
AIN
DIN
VCC ± 0.5 V
X
X
X
High-Z
TTL Standby
H
X
X
X
High-Z
Output Disable
L
H
H
X
High-Z
CMOS Standby
Legend:
L = Logic Low = VIL, H = Logic High = VIH, VID = 12.0 ± 0.5 V, X = Don’t Care, DIN = Data In, DOUT = Data Out, AIN = Address In
Note: See the “Sector Protection/Unprotection” section. for more information.
Requirements for Reading Array Data
To read array data from the outputs, the system must
drive the CE# and OE# pins to VIL. CE# is the power
control and selects the device. OE# is the output control and gates array data to the output pins. WE# should
remain at VIH.
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory content occurs during the power transition. No command is
necessary in this mode to obtain array data. Standard
microprocessor read cycles that assert valid addresses
on the device address inputs produce valid data on the
device data outputs. The device remains enabled for
read access until the command register contents are
altered.
See “Reading Array Data” for more information. Refer
to the AC Read Operations table for timing specifications and to the Read Operations Timings diagram for
the timing waveforms. ICC1 in the DC Characteristics
table represents the active current specification for
reading array data.
Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE# to VIL, and OE# to VIH.
An erase operation can erase one sector, multiple sectors, or the entire device. The Sector Address Tables
November 1, 2006 21445E5
indicate the address space that each sector occupies.
A “sector address” consists of the address bits required
to uniquely select a sector. See the “Command Definitions” section for details on erasing a sector or the
entire chip, or suspending/resuming the erase
operation.
After the system writes the autoselect command sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the internal register (which is separate from the memory array)
on DQ7–DQ0. Standard read cycle timings apply in this
mode. Refer to the “Autoselect Mode” and “Autoselect
Command Sequence” sections for more information.
ICC2 in the DC Characteristics table represents the active current specification for the write mode. The “AC
Characteristics” section contains timing specification
tables and timing diagrams for write operations.
Program and Erase Operation Status
During an erase or program operation, the system may
check the status of the operation by reading the status
bits on DQ7–DQ0. Standard read cycle timings and ICC
read specifications apply. Refer to “Write Operation
Status” for more information, and to each AC Characteristics section for timing diagrams.
Standby Mode
When the system is not reading or writing to the device,
it can place the device in the standby mode. In this
mode, current consumption is greatly reduced, and the
Am29F040B
7
D A T A
outputs are placed in the high impedance state, independent of the OE# input.
The device enters the CMOS standby mode when the
CE# pin is held at VCC ± 0.5 V. (Note that this is a more
restricted voltage range than VIH.) The device enters
the TTL standby mode when CE# is held at VIH. The
device requires the standard access time (tCE) before it
is ready to read data.
Table 2.
S H E E T
If the device is deselected during erasure or programming, the device draws active current until the
operation is completed.
ICC3 in the DC Characteristics tables represents the
standby current specification.
Output Disable Mode
When the OE# input is at VIH, output from the device is
disabled. The output pins are placed in the high impedance state.
Sector Addresses Table
Sector
A18
A17
A16
Address Range
SA0
0
0
0
00000h–0FFFFh
SA1
0
0
1
10000h–1FFFFh
SA2
0
1
0
20000h–2FFFFh
SA3
0
1
1
30000h–3FFFFh
SA4
1
0
0
40000h–4FFFFh
SA5
1
0
1
50000h–5FFFFh
SA6
1
1
0
60000h–6FFFFh
SA7
1
1
1
70000h–7FFFFh
Note: All sectors are 64 Kbytes in size.
8
Am29F040B
21445E5 November 1, 2006
D A T A
S H E E T
Autoselect Mode
The autoselect mode provides manufacturer and device identification, and sector protection verification,
through identifier codes output on DQ7–DQ0. This
mode is primarily intended for programming equipment
to automatically match a device to be programmed with
its corresponding programming algorithm. However,
the autoselect codes can also be accessed in-system
through the command register.
address must appear on the appropriate highest order
address bits. Refer to the corresponding Sector Address Tables. The Command Definitions table shows
the remaining address bits that are don’t care. When all
necessary bits have been set as required, the programming equipment may then read the corresponding
identifier code on DQ7–DQ0.
To access the autoselect codes in-system, the host
system can issue the autoselect command via the
command register, as shown in the Command Definitions table. This method does not require VID. See
“Command Definitions” for details on using the autoselect mode.
When using programming equipment, the autoselect
mode requires VID (11.5 V to 12.5 V) on address pin
A9. Address pins A6, A1, and A0 must be as shown in
Autoselect Codes (High Voltage Method) table. In addition, when verifying sector protection, the sector
Table 3.
Am29F040B Autoselect Codes (High Voltage Method)
A18–A16
A15–A10
A9
A8–A7
A6
A5–A2
A1
A0
Identifier Code on
DQ7-DQ0
Manufacturer ID: AMD
X
X
VID
X
VIL
X
VIL
VIL
01h
Device ID: Am29F040B
X
X
VID
X
VIL
X
VIL
VIH
A4h
Sector
Address
X
VID
X
VIL
X
VIH
VIL
Description
Sector Protection
Verification
01h (protected)
Sector Protection/Unprotection
The hardware sector protection feature disables both
program and erase operations in any sector. The hardware sector unprotection feature re-enables both
program and erase operations in previously protected
sectors.
Sector protection/unprotection must be implemented
using programming equipment. The procedure requires a high voltage (VID) on address pin A9 and the
control pins. Details on this method are provided in a
supplement, publication number 19957. Contact an
AMD representative to obtain a copy of the appropriate
document.
The device is shipped with all sectors unprotected.
AMD offers the option of programming and protecting
sectors at its factory prior to shipping the device
through AMD’s ExpressFlash™ Service. Contact an
AMD representative for details.
It is possible to determine whether a sector is protected
or unprotected. See “Autoselect Mode” for details.
00h (unprotected)
gramming, which might otherwise be caused by
spurious system level signals during VCC power-up and
power-down transitions, or from system noise.
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC
power-up and power-down. The command register and
all internal program/erase circuits are disabled, and the
device resets. Subsequent writes are ignored until VCC
is greater than VLKO. The system must provide the
proper signals to the control pins to prevent unintentional writes when VCC is greater than VLKO.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or
WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
VIL, CE# = VIH or WE# = VIH. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a
logical one.
Hardware Data Protection
Power-Up Write Inhibit
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to the Command Definitions table). In addition, the following hardware data
protection measures prevent accidental erasure or pro-
If WE# = CE# = VIL and OE# = VIH during power up, the
device does not accept commands on the rising edge
of WE#. The internal state machine is automatically
reset to reading array data on power-up.
November 1, 2006 21445E5
Am29F040B
9
D A T A
S H E E T
COMMAND DEFINITIONS
Writing specific address and data commands or sequences into the command register initiates device
operations. The Command Definitions table defines the
valid register command sequences. Writing incorrect
address and data values or writing them in the improper sequence resets the device to reading array
data.
All addresses are latched on the falling edge of WE# or
CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
first. Refer to the appropriate timing diagrams in the
“AC Characteristics” section.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is also ready to read array
data after completing an Embedded Program or Embedded Erase algorithm.
After the device accepts an Erase Suspend command,
the device enters the Erase Suspend mode. The system can read array data using the standard read
timings, except that if it reads at an address within
erase-suspended sectors, the device outputs status
data. After completing a programming operation in the
Erase Suspend mode, the system may once again
read array data with the same exception. See “Erase
Suspend/Erase Resume Commands” for more information on this mode.
The system must issue the reset command to re-enable the device for reading array data if DQ5 goes high,
or while in the autoselect mode. See the “Reset Command” section, next.
See also “Requirements for Reading Array Data” in the
“Device Bus Operations” section for more information.
The Read Operations table provides the read parameters, and Read Operation Timings diagram shows the
timing diagram.
Reset Command
Writing the reset command to the device resets the device to reading array data. Address bits are don’t care
for this command.
The reset command may be written between the sequence cycles in an erase command sequence before
erasing begins. This resets the device to reading array
data. Once erasure begins, however, the device ignores reset commands until the operation is complete.
The reset command may be written between the sequence cycles in a program command sequence
before programming begins. This resets the device to
reading array data (also applies to programming in
Erase Suspend mode). Once programming begins,
10
however, the device ignores reset commands until the
operation is complete.
The reset command may be written between the sequence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command must
be written to return to reading array data (also applies
to autoselect during Erase Suspend).
If DQ5 goes high during a program or erase operation,
writing the reset command returns the device to reading array data (also applies during Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host
system to access the manufacturer and devices codes,
and determine whether or not a sector is protected.
The Command Definitions table shows the address
and data requirements. This method is an alternative to
that shown in the Autoselect Codes (High Voltage
Method) table, which is intended for PROM programmers and requires VID on address bit A9.
The autoselect command sequence is initiated by writing two unlock cycles, followed by the autoselect
command. The device then enters the autoselect
mode, and the system may read at any address any
number of times, without initiating another command
sequence.
A read cycle at address XX00h or retrieves the manufacturer code. A read cycle at address XX01h returns
the device code. A read cycle containing a sector address (SA) and the address 02h in returns 01h if that
sector is protected, or 00h if it is unprotected. Refer to
the Sector Address tables for valid sector addresses.
The system must write the reset command to exit the
autoselect mode and return to reading array data.
Byte Program Command Sequence
Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two
unlock write cycles, followed by the program set-up
command. The program address and data are written
next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further
controls or timings. The device automatically provides
internally generated program pulses and verify the programmed cell margin. The Command Definitions take
shows the address and data requirements for the byte
program command sequence.
When the Embedded Program algorithm is complete,
the device then returns to reading array data and addresses are no longer latched. The system can
determine the status of the program operation by using
DQ7 or DQ6. See “Write Operation Status” for information on these status bits.
Am29F040B
21445E5 November 1, 2006
D A T A
Any commands written to the device during the Embedded Program Algorithm are ignored.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed
from a “0” back to a “1”. Attempting to do so may halt
the operation and set DQ5 to “1”, or cause the Data#
Polling algorithm to indicate the operation was successful. However, a succeeding read shows that the
data is still “0”. Only erase operations can convert a “0”
to a “1”.
Write Program
Command Sequence
No
No
Last Address?
Yes
Programming
Completed
Note: See the appropriate Command Definitions table for
program command sequence.
Figure 1.
Program Operation
Chip Erase Command Sequence
Chip erase is a six-bus-cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire
November 1, 2006 21445E5
The system can determine the status of the erase operation by using DQ7, DQ6, or DQ2. See “Write
Operation Status” for information on these status bits.
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses are
no longer latched.
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two
additional unlock write cycles are then followed by the
address of the sector to be erased, and the sector
erase command. The Command Definitions table
shows the address and data requirements for the sector erase command sequence.
Yes
Increment Address
Any commands written to the chip during the Embedded Erase algorithm are ignored.
Sector Erase Command Sequence
Data Poll
from System
Verify Data?
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any controls or timings during these operations. The Command
Definitions table shows the address and data requirements for the chip erase command sequence.
Figure 2 illustrates the algorithm for the erase operation. See the Erase and Program Operations tables in
“AC Characteristics” for parameters, and to the Chip/
Sector Erase Operation Timings for timing waveforms.
START
Embedded
Program
algorithm
in progress
S H E E T
The device does not require the system to preprogram
the memory prior to erase. The Embedded Erase algorithm automatically programs and verifies the sector for
an all zero data pattern prior to electrical erase. The
system is not required to provide any controls or timings during these operations.
After the command sequence is written, a sector erase
time-out of 50 µs begins. During the time-out period,
additional sector addresses and sector erase commands may be written. Loading the sector erase buffer
may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time
between these additional cycles must be less than 50
µs, otherwise the last address and command might not
be accepted, and erasure may begin. It is recommended that processor interrupts be disabled during
this time to ensure all commands are accepted. The interrupts can be re-enabled after the last Sector Erase
command is written. If the time between additional sector erase commands can be assumed to be less than
50 µs, the system need not monitor DQ3. Any command other than Sector Erase or Erase Suspend
during the time-out period resets the device to
reading array data. The system must rewrite the command sequence and any additional sector addresses
and commands.
The system can monitor DQ3 to determine if the sector
erase timer has timed out. (See the “DQ3: Sector Erase
Am29F040B
11
D A T A
Timer” section.) The time-out begins from the rising
edge of the final WE# pulse in the command sequence.
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other commands
are ignored.
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses are
no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, or DQ2.
Refer to “Write Operation Status” for information on
these status bits.
Figure 2 illustrates the algorithm for the erase operation. Refer to the Erase/Program Operations tables in
the “AC Characteristics” section for parameters, and to
the Sector Erase Operations Timing diagram for timing
waveforms.
Erase Suspend/Erase Resume Commands
S H E E T
the status of the program operation using the DQ7 or
DQ6 status bits, just as in the standard program operation. See “Wr ite Operation Status” for more
information.
The system may also write the autoselect command
sequence when the device is in the Erase Suspend
mode. The device allows reading autoselect codes
even at addresses within erasing sectors, since the
codes are not stored in the memory array. When the
device exits the autoselect mode, the device reverts to
the Erase Suspend mode, and is ready for another
valid operation. See “Autoselect Command Sequence”
for more information.
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase suspend
mode and continue the sector erase operation. Further
writes of the Resume command are ignored. Another
Erase Suspend command can be written after the device has resumed erasing.
The Erase Suspend command allows the system to interrupt a sector erase operation and then read data
from, or program data to, any sector not selected for
erasure. This command is valid only during the sector
erase operation, including the 50 µs time-out period
during the sector erase command sequence. The
Erase Suspend command is ignored if written during
the chip erase operation or Embedded Program algorithm. Writing the Erase Suspend command during the
Sector Erase time-out immediately terminates the
time-out period and suspends the erase operation. Addresses are “don’t-cares” when writing the Erase
Suspend command.
START
Write Erase
Command Sequence
Data Poll
from System
When the Erase Suspend command is written during a
sector erase operation, the device requires a maximum
of 20 µs to suspend the erase operation. However,
when the Erase Suspend command is written during
the sector erase time-out, the device immediately terminates the time-out period and suspends the erase
operation.
After the erase operation has been suspended, the
system can read array data from or program data to
any sector not selected for erasure. (The device “erase
suspends” all sectors selected for erasure.) Normal
read and write timings and command definitions apply.
Reading at any address within erase-suspended sectors produces status data on DQ7–DQ0. The system
can use DQ7, or DQ6 and DQ2 together, to determine
if a sector is actively erasing or is erase-suspended.
See “Write Operation Status” for information on these
status bits.
After an erase-suspended program operation is complete, the system can once again read array data within
non-suspended sectors. The system can determine
12
No
Embedded
Erase
algorithm
in progress
Data = FFh?
Yes
Erasure Completed
Notes:
1. See the appropriate Command Definitions table for erase
command sequence.
2. See “DQ3: Sector Erase Timer” for more information.
Am29F040B
Figure 2.
Erase Operation
21445E5 November 1, 2006
D A T A
S H E E T
Command Definitions
Table 4.
Bus Cycles (Notes 2–4)
Cycles
Command
Sequence
(Note 1)
Am29F040B Command Definitions
Addr
Read (Note 5)
1
RA
RD
Reset (Note 6)
1
XXX
F0
Manufacturer ID
4
555
AA
2AA
55
555
90
X00
01
Device ID
4
555
AA
2AA
55
555
90
X01
A4
Sector Protect Verify
(Note 8)
4
555
AA
2AA
55
555
90
SA
X02
Program
4
555
AA
2AA
55
555
A0
PA
PD
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Sector Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Erase Suspend (Note 9)
1
XXX
B0
Erase Resume (Note 10)
1
XXX
30
Autoselect
(Note 7)
First
Second
Data
Third
Fourth
Addr
Data
Addr
Data
Addr
Data
Fifth
Sixth
Addr
Data
Addr
Data
00
01
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed.
Addresses latch on the falling edge of the WE# or CE# pulse,
whichever happens later.
PD = Data to be programmed at location PA. Data latches on the
rising edge of WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A18–A16 select a unique sector.
Notes:
1. See Table 1 for description of bus operations.
7. The fourth cycle of the autoselect command sequence is a
read cycle.
2. All values are in hexadecimal.
3. Except when reading array or autoselect data, all bus cycles
are write operations.
4. Address bits A18–A11 are don’t cares for unlock and
command cycles, unless SA or PA required.
5. No unlock or command cycles required when reading array data.
6. The Reset command is required to return to reading array
data when device is in the autoselect mode, or if DQ5 goes
high (while the device is providing status data).
November 1, 2006 21445E5
8. The data is 00h for an unprotected sector and 01h for a
protected sector.See “Autoselect Command Sequence” for
more information.
9. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend
mode. The Erase Suspend command is valid only during a
sector erase operation.
10. The Erase Resume command is valid only during the Erase
Suspend mode.
Am29F040B
13
D A T A
S H E E T
WRITE OPERATION STATUS
The device provides several bits to determine the status of a write operation: DQ2, DQ3, DQ5, DQ6, and
DQ7. Table 5 and the following subsections describe
the functions of these bits. DQ7 and DQ6 each offer a
method for determining whether a program or erase
operation is complete or in progress. These three bits
are discussed first.
rithms) figure in the “AC Characteristics” section
illustrates this.
Table 5 shows the outputs for Data# Polling on DQ7.
Figure 3 shows the Data# Polling algorithm.
START
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Algorithm is in progress or
completed, or whether the device is in Erase Suspend.
Data# Polling is valid after the rising edge of the final
WE# pulse in the program or erase command
sequence.
During the Embedded Program algorithm, the device
outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to
programming during Erase Suspend. When the Embedded Program algorithm is complete, the device
outputs the datum programmed to DQ7. The system
must provide the program address to read valid status
information on DQ7. If a program address falls within a
protected sector, Data# Polling on DQ7 is active for approximately 2 µs, then the device returns to reading
array data.
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
No
No
When the system detects DQ7 has changed from the
complement to true data, it can read valid data at
DQ7–DQ0 on the following read cycles. This is because DQ7 may cha nge asynch rono usly with
DQ0–DQ6 while Output Enable (OE#) is asserted low.
The Data# Polling Timings (During Embedded Algo-
14
DQ5 = 1?
Yes
During the Embedded Erase algorithm, Data# Polling
produces a “0” on DQ7. When the Embedded Erase algorithm is complete, or if the device enters the Erase
Suspend mode, Data# Polling produces a “1” on DQ7.
This is analogous to the complement/true datum output
described for the Embedded Program algorithm: the
erase function changes all the bits in a sector to “1”;
prior to this, the device outputs the “complement,” or
“0.” The system must provide an address within any of
the sectors selected for erasure to read valid status information on DQ7.
After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling
on DQ7 is active for approximately 100 µs, then the device returns to reading array data. If not all selected
sectors are protected, the Embedded Erase algorithm
erases the unprotected sectors, and ignores the selected sectors that are protected.
Yes
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
Yes
No
FAIL
PASS
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is an address within any
sector selected for erasure. During chip erase, a valid
address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.
Am29F040B
Figure 3.
Data# Polling Algorithm
21445E5 November 1, 2006
D A T A
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded
Program or Erase algorithm is in progress or complete,
or whether the device has entered the Erase Suspend
mode. Toggle Bit I may be read at any address, and is
valid after the rising edge of the final WE# pulse in the
command sequence (prior to the program or erase operation), and during the sector erase time-out.
During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause
DQ6 to toggle. (The system may use either OE# or
CE# to control the read cycles.) When the operation is
complete, DQ6 stops toggling.
After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for
approximately 100 µs, then returns to reading array
data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected
sectors, and ignores the selected sectors that are
protected.
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erasesuspended. When the device is actively erasing (that is,
the Embedded Erase algorithm is in progress), DQ6
toggles. When the device enters the Erase Suspend
mode, DQ6 stops toggling. However, the system must
also use DQ2 to determine which sectors are erasing
or erase-suspended. Alternatively, the system can use
DQ7 (see the subsection on “DQ7: Data# Polling”).
If a program address falls within a protected sector,
DQ6 toggles for approximately 2 µs after the program
command sequence is written, then returns to reading
array data.
DQ6 also toggles during the erase-suspend-program
mode, and stops toggling once the Embedded Program algorithm is complete.
The Write Operation Status table shows the outputs for
Toggle Bit I on DQ6. Refer to Figure 4 for the toggle bit
algorithm, and to the Toggle Bit Timings figure in the
“AC Characteristics” section for the timing diagram.
The DQ2 vs. DQ6 figure shows the differences between DQ2 and DQ6 in graphical form. See also the
subsection on “DQ2: Toggle Bit II”.
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing
(that is, the Embedded Erase algorithm is in progress),
or whether that sector is erase-suspended. Toggle Bit
II is valid after the rising edge of the final WE# pulse in
the command sequence.
DQ2 toggles when the system reads at addresses
within those sectors that have been selected for era-
November 1, 2006 21445E5
S H E E T
sure. (The system may use either OE# or CE# to
control the read cycles.) But DQ2 cannot distinguish
whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the
device is actively erasing, or is in Erase Suspend, but
cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and
mode information. Refer to Table 5 to compare outputs
for DQ2 and DQ6.
Figure 4 shows the toggle bit algorithm in flowchart
form, and the section “DQ2: Toggle Bit II” explains the
algorithm. See also the “DQ6: Toggle Bit I” subsection.
Refer to the Toggle Bit Timings figure for the toggle bit
timing diagram. The DQ2 vs. DQ6 figure shows the differences between DQ2 and DQ6 in graphical form.
Reading Toggle Bits DQ6/DQ2
Refer to Figure 4 for the following discussion. Whenever the system initially begins reading toggle bit
status, it must read DQ7–DQ0 at least twice in a row to
determine whether a toggle bit is toggling. Typically, a
system would note and store the value of the toggle bit
after the first read. After the second read, the system
would compare the new value of the toggle bit with the
first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can
read array data on DQ7–DQ0 on the following read
cycle.
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high
(see the section on DQ5). If it is, the system should
then determine again whether the toggle bit is toggling,
since the toggle bit may have stopped toggling just as
DQ5 went high. If the toggle bit is no longer toggling,
the device has successfully completed the program or
erase operation. If it is still toggling, the device did not
complete the operation successfully, and the system
must write the reset command to return to reading
array data.
The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not
gone high. The system may continue to monitor the
toggle bit and DQ5 through successive read cycles, determining the status as described in the previous
paragraph. Alternatively, it may choose to perform
other system tasks. In this case, the system must start
at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 4).
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has
exceeded a specified internal pulse count limit. Under
these conditions DQ5 produces a “1.” This is a failure
condition that indicates the program or erase cycle was
not successfully completed.
Am29F040B
15
D A T A
S H E E T
The DQ5 failure condition may appear if the system
tries to program a “1” to a location that is previously programmed to “0.” Only an erase operation can change
a “0” back to a “1.” Under this condition, the device
halts the operation, and when the operation has exceeded the timing limits, DQ5 produces a “1.”
START
Under both these conditions, the system must issue the
reset command to return the device to reading array
data.
Read DQ7–DQ0
DQ3: Sector Erase Timer
Read DQ7–DQ0
(Note 1)
Toggle Bit
= Toggle?
No
After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not an
erase operation has begun. (The sector erase timer
does not apply to the chip erase command.) If additional sectors are selected for erasure, the entire timeout also applies after each additional sector erase command. When the time-out is complete, DQ3 switches
from “0” to “1.” The system may ignore DQ3 if the system can guarantee that the time between additional
sector erase commands is always less than 50 µs. See
also the “Sector Erase Command Sequence” section.
Yes
No
After the sector erase command sequence is written,
the system should read the status on DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure the device has
accepted the command sequence, and then read DQ3.
If DQ3 is “1”, the internally controlled erase cycle has
begun; all further commands (other than Erase Suspend) are ignored until the erase operation is complete.
If DQ3 is “0”, the device accepts additional sector erase
commands. To ensure the command has been accepted, the system software should check the status of
DQ3 prior to and following each subsequent sector
erase command. If DQ3 is high on the second status
check, the last command might not have been accepted. Table 5 shows the outputs for DQ3.
DQ5 = 1?
Yes
Read DQ7–DQ0 (Notes 1,
Twice
2)
Toggle Bit
= Toggle?
No
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Notes:
1. Read toggle bit twice to determine whether or not it is
toggling. See text.
2. Recheck toggle bit because it may stop toggling as DQ5
changes to “1”. See text.
Figure 4.
16
Am29F040B
Toggle Bit Algorithm
21445E5 November 1, 2006
D A T A
Table 5.
Operation
Standard Embedded Program Algorithm
Mode
Embedded Erase Algorithm
Reading within Erase
Suspended Sector
Erase
Suspend Reading within Non-Erase
Suspended Sector
Mode
Erase-Suspend-Program
S H E E T
Write Operation Status
DQ7
(Note 1)
DQ6
DQ5
(Note 2)
DQ3
DQ2
(Note 1)
DQ7#
Toggle
0
N/A
No toggle
0
Toggle
0
1
Toggle
1
No toggle
0
N/A
Toggle
Data
Data
Data
Data
Data
DQ7#
Toggle
0
N/A
N/A
Notes:
1. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
2. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
See “DQ5: Exceeded Timing Limits” for more information.
November 1, 2006 21445E5
Am29F040B
17
D A T A
S H E E T
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . –65°C to +125°C
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . –55°C to +125°C
Voltage with Respect to Ground
VCC (Note 1) . . . . . . . . . . . . . . . . . –2.0 V to 7.0 V
A9, OE# (Note 2) . . . . . . . . . . . . . –2.0 V to 12.5 V
20 ns
+0.8 V
–0.5 V
–2.0 V
All other pins (Note 1) . . . . . . . . . . –2.0 V to 7.0 V
20 ns
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Figure 5. Maximum Negative
Overshoot Waveform
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V. During
voltage transitions, inputs may undershoot VSS to –2.0 V
for periods of up to 20 ns. See Figure 5. Maximum DC
voltage on input and I/O pins is V CC + 0.5 V. During
voltage transitions, input and I/O pins may overshoot to
VCC + 2.0 V for periods up to 20 ns. See Figure 6.
2. Minimum DC input voltage on A9 pin is –0.5 V. During
voltage transitions, A9 and OE# may undershoot VSS to
–2.0 V for periods of up to 20 ns. See Figure 5. Maximum
DC input voltage on A9 and OE# is 12.5 V which may
overshoot to 13.5 V for periods up to 20 ns.
3. No more than one output shorted to ground at a time.
Duration of the short circuit should not be greater than
one second.
20 ns
20 ns
VCC
+2.0 V
VCC
+0.5 V
2.0 V
20 ns
20 ns
Figure 6. Maximum Positive
Overshoot Waveform
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure of the device to absolute maximum rating conditions for
extended periods may affect device reliability.
OPERATING RANGES
VCC for ± 10% devices . . . . . . . . . . . +4.5 V to +5.5 V
Commercial (C) Devices
Operating ranges define those limits between which the
functionality of the device is guaranteed.
Ambient Temperature (TA) . . . . . . . . . . . 0°C to +70°C
Industrial (I) Devices
Ambient Temperature (TA) . . . . . . . . . –40°C to +85°C
Extended (E) Devices
Ambient Temperature (TA) . . . . . . . . –55°C to +125°C
VCC Supply Voltages
VCC for ± 5% devices . . . . . . . . . . .+4.75 V to +5.25 V
18
Am29F040B
21445E5 November 1, 2006
D A T A
S H E E T
DC CHARACTERISTICS
TTL/NMOS Compatible
Parameter
Symbol
Parameter Description
Test Description
Min
Typ
Max
Unit
±1.0
µA
50
µA
±1.0
µA
ILI
Input Load Current
VIN = VSS to VCC, VCC = VCC Max
ILIT
A9 Input Load Current
VCC = VCC Max, A9 = 12.5 V
ILO
Output Leakage Current
VOUT = VSS to VCC, VCC = VCC Max
ICC1
VCC Active Read Current (Notes 1, 2) CE# = VIL, OE# = VIH
20
30
mA
ICC2
VCC Active Write (Program/Erase)
Current (Notes 2, 3, 4)
CE# = VIL, OE# = VIH
30
40
mA
ICC3
VCC Standby Current (Note 2)
CE# = VIH
0.4
1.0
mA
VIL
Input Low Level
–0.5
0.8
V
VIH
Input High Level
2.0
VCC + 0.5
V
VID
Voltage for Autoselect
and Sector Protect
VCC = 5.25 V
10.5
12.5
V
VOL
Output Low Voltage
IOL = 12 mA, VCC = VCC Min
0.45
V
VOH
Output High Voltage
IOH = –2.5 mA, VCC = VCC Min
VLKO
Low VCC Lock-Out Voltage
2.4
V
3.2
4.2
V
Max
Unit
±1.0
µA
50
µA
±1.0
µA
CMOS Compatible
Parameter
Symbol
Parameter Description
Test Description
Min
Typ
ILI
Input Load Current
VIN = VSS to VCC, VCC = VCC Max
ILIT
A9 Input Load Current
VCC = VCC Max, A9 = 12.5 V
ILO
Output Leakage Current
VOUT = VSS to VCC, VCC = VCC Max
ICC1
VCC Active Read Current
(Notes 1, 2)
CE# = VIL, OE# = VIH
20
30
mA
ICC2
VCC Active Program/Erase Current
(Notes 2, 3, 4)
CE# = VIL, OE# = VIH
30
40
mA
ICC3
VCC Standby Current (Notes 2, 5)
CE# = VCC ± 0.5 V
1
5
µA
VIL
Input Low Level
–0.5
0.8
V
VIH
Input High Level
0.7 x VCC
VCC + 0.3
V
VID
Voltage for Autoselect and Sector
Protect
VCC = 5.25 V
10.5
12.5
V
VOL
Output Low Voltage
IOL = 12.0 mA, VCC = VCC Min
0.45
V
VOH1
Output High Voltage
IOH = –2.5 mA, VCC = VCC Min
0.85 VCC
V
IOH = –100 μA, VCC = VCC Min
VCC –0.4
V
VOH2
VLKO
Low VCC Lock-out Voltage
3.2
4.2
V
Notes for DC Characteristics (both tables):
1. The ICC current listed includes both the DC operating current and the frequency dependent component (at 6 MHz).
The frequency component typically is less than 2 mA/MHz, with OE# at VIH.
2. Maximum ICC specifications are tested with VCC = VCCmax.
3. ICC active while Embedded Algorithm (program or erase) is in progress.
4. Not 100% tested.
5. For CMOS mode only, ICC3 = 20 µA max at extended temperatures (> +85°C).
November 1, 2006 21445E5
Am29F040B
19
D A T A
S H E E T
TEST CONDITIONS
Table 6.
5.0 V
Test Specifications
Test Condition
2.7 kΩ
Device
Under
Test
CL
-55
Output Load
6.2 kΩ
1 TTL gate
Output Load Capacitance, CL
(including jig capacitance)
30
100
pF
Input Rise and Fall Times
5
20
ns
0.0–3.0
0.45–2.4
V
Input timing measurement
reference levels
1.5
0.8, 2.0
V
Output timing measurement
reference levels
1.5
0.8, 2.0
V
Input Pulse Levels
Note: Diodes are IN3064 or equivalent
Figure 7.
Test Setup
All others Unit
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
20
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
Am29F040B
21445E5 November 1, 2006
D A T A
S H E E T
AC CHARACTERISTICS
Read Only Operations
Parameter Symbols
Speed Options (Note 1)
JEDEC
Std
Description
Test Setup
-55
-70
-90
-120
Unit
tAVAV
tRC
Read Cycle Time (Note 3)
Min
55
70
90
120
ns
tAVQV
tACC
Address to Output Delay
CE# = VIL,
OE# = VIL
Max
55
70
90
120
ns
tELQV
tCE
Chip Enable to Output Delay
OE# = VIL
Max
55
70
90
120
ns
tGLQV
tOE
Output Enable to Output Delay
Max
30
30
35
50
ns
tOEH
Output Enable Hold
Time (Note 3)
Read
Min
0
0
0
0
ns
Toggle and
Data# Polling
Min
10
10
10
10
ns
Max
18
20
20
30
ns
18
20
20
30
ns
0
0
0
0
ns
tEHQZ
tDF
Chip Enable to Output High Z
(Notes 2, 3)
tGHQZ
tDF
Output Enable to Output High Z
(Notes 2, 3)
tAXQX
tOH
Output Hold Time from Addresses, CE#
or OE#, Whichever Occurs First
Min
Notes:
1. See Figure 7 and Table 6 for test conditions.
2. Output driver disable time.
3. Not 100% tested.
tRC
Addresses Stable
Addresses
tACC
CE#
tDF
tOE
OE#
tOEH
WE#
tCE
tOH
HIGH Z
HIGH Z
Output Valid
Outputs
0V
Figure 8.
November 1, 2006 21445E5
Read Operation Timings
Am29F040B
21
D A T A
S H E E T
AC CHARACTERISTICS
Erase and Program Operations
Parameter Symbols
Speed Options
JEDEC
Std
Description
-55
-70
-90
-120
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
55
70
90
120
ns
tAVWL
tAS
Address Setup Time
Min
tWLAX
tAH
Address Hold Time
Min
40
45
45
50
ns
tDVWH
tDS
Data Setup Time
Min
25
30
45
50
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
Read Recover Time Before Write
(OE# high to WE# low)
Min
0
ns
0
ns
tGHWL
tGHWL
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
tWHWL
tWPH
Write Pulse Width High
Min
20
ns
tWHWH1
tWHWH1
Byte Programming Operation
(Note 2)
Typ
7
µs
tWHWH2
tWHWH2
Sector Erase Operation
(Note 2))
Typ
1
sec
VCC Set Up Time (Note 1))
Min
50
µs
tVCS
30
35
45
50
ns
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
22
Am29F040B
21445E5 November 1, 2006
D A T A
S H E E T
AC CHARACTERISTICS
Program Command Sequence (last two cycles)
tAS
tWC
Addresses
555h
Read Status Data (last two cycles)
PA
PA
PA
tAH
CE#
tCH
OE#
tWHWH1
tWP
WE#
tWPH
tCS
tDS
tDH
PD
A0h
Data
Status
DOUT
tVCS
VCC
Note: PA = program address, PD = program data, DOUT is the true data at the program address.
Figure 9. Program Operation Timings
Erase Command Sequence (last two cycles)
tAS
tWC
2AAh
Addresses
Read Status Data
VA
SA
VA
555h for chip erase
tAH
CE#
tCH
OE#
tWP
WE#
tWPH
tCS
tWHWH2
tDS
tDH
Data
55h
30h
In
Progress
Complete
10 for Chip Erase
tVCS
VCC
Note:
SA = Sector Address. VA = Valid Address for reading status data.
Figure 10.
November 1, 2006 21445E5
Chip/Sector Erase Operation Timings
Am29F040B
23
D A T A
S H E E T
AC CHARACTERISTICS
tRC
Addresses
VA
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
High Z
DQ7
Complement
Complement
DQ0–DQ6
Status Data
Status Data
Valid Data
True
High Z
Valid Data
True
Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data
read cycle .
Figure 11.
Data# Polling Timings (During Embedded Algorithms)
tRC
Addresses
VA
VA
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
DQ6/DQ2
High Z
Valid Status
Valid Status
(first read)
(second read)
Valid Status
Valid Data
(stops toggling)
Note:
VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle,
and array data read cycle.
Figure 12.
24
Toggle Bit Timings (During Embedded Algorithms)
Am29F040B
21445E5 November 1, 2006
D A T A
S H E E T
AC CHARACTERISTICS
Enter
Embedded
Erasing
WE#
Erase
Suspend
Erase
Enter Erase
Suspend Program
Erase
Suspend
Program
Erase Suspend
Read
Erase
Resume
Erase Suspend
Read
Erase
Erase
Complete
DQ6
DQ2
DQ2 and DQ6 toggle with OE# and CE#
Note: Both DQ6 and DQ2 toggle with OE# or CE#. See the text on DQ6 and DQ2 in the section “Write Operation Status” for more
information.
Figure 13.
November 1, 2006 21445E5
DQ2 vs. DQ6
Am29F040B
25
D A T A
S H E E T
AC CHARACTERISTICS
Erase and Program Operations
Alternate CE# Controlled Writes
Parameter Symbols
Speed Options
JEDEC
Std
Description
-55
-70
-90
-120
Unit
tAVAV
tWC
Write Cycle Time (Note 1))
Min
55
70
90
120
ns
tAVEL
tAS
Address Setup Time
Min
tELAX
tAH
Address Hold Time
Min
40
45
45
50
ns
tDVEH
tDS
Data Setup Time
Min
25
30
45
50
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tGHEL
tGHEL
Read Recover Time Before Write
Min
0
ns
tWLEL
tWS
CE# Setup Time
Min
0
ns
tEHWH
tWH
CE# Hold Time
Min
0
ns
tELEH
tCP
Write Pulse Width
Min
30
35
45
50
ns
tEHEL
tCPH
Write Pulse Width High
Min
20
20
20
20
ns
tWHWH1
tWHWH1
Byte Programming Operation
(Note 2))
Typ
7
µs
tWHWH2
tWHWH2
Sector Erase Operation
(Note 2))
Typ
1
sec
0
ns
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
26
Am29F040B
21445E5 November 1, 2006
D A T A
S H E E T
AC CHARACTERISTICS
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
Data# Polling
Addresses
PA
tWC
tAS
tAH
tWH
WE#
tGHEL
OE#
tWHWH1 or 2
tCP
CE#
tWS
tCPH
tBUSY
tDS
tDH
DQ7#
Data
tRH
A0 for program
55 for erase
DOUT
PD for program
30 for sector erase
10 for chip erase
Notes:
1. PA = Program Address, PD = Program Data, SA = Sector Address, DQ7# = Complement of Data Input, DOUT = Array Data.
2. Figure indicates the last two bus cycles of the command sequence.
Figure 14.
November 1, 2006 21445E5
Alternate CE# Controlled Write Operation Timings
Am29F040B
27
D A T A
S H E E T
ERASE AND PROGRAMMING PERFORMANCE
Typ
(Note 1)
Max
(Note 2)
Unit
Sector Erase Time
1
8
sec
Chip Erase Time
8
64
sec
Byte Programming Time
7
300
µs
3.6
10.8
sec
Parameter
Comments
Excludes 00h programming prior to erasure (Note 4)
Excludes system-level overhead (Note 5)
Chip Programming Time (Note 3)
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 5.0 V VCC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 4.5 V (4.75 V for -55), 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum byte program time listed. If the maximum byte program time given is exceeded, only then
does the device set DQ5 = 1. See the section on DQ5 for further information.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 4
for further information on command definitions.
6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Input Voltage with respect to VSS on all I/O pins
VCC Current
Min
Max
–1.0 V
VCC + 1.0 V
–100 mA
+100 mA
Includes all pins except VCC. Test conditions: VCC = 5.0 V, one pin at a time.
TSOP PIN CAPACITANCE
Parameter Symbol
CIN
Parameter Description
Test Setup
Typ
Max
Unit
6
7.5
pF
Input Capacitance
VIN = 0
COUT
Output Capacitance
VOUT = 0
8.5
12
pF
CIN2
Control Pin Capacitance
VIN = 0
7.5
9
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
28
Am29F040B
21445E5 November 1, 2006
D A T A
S H E E T
PLCC AND PDIP PIN CAPACITANCE
Parameter Symbol
CIN
Parameter Description
Test Setup
Typ
Max
Unit
Input Capacitance
VIN = 0
4
6
pF
COUT
Output Capacitance
VOUT = 0
8
12
pF
CIN2
Control Pin Capacitance
VPP = 0
8
12
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter
Test Conditions
Min
Unit
150°C
10
Years
125°C
20
Years
Minimum Pattern Data Retention Time
November 1, 2006 21445E5
Am29F040B
29
D A T A
S H E E T
PHYSICAL DIMENSIONS
PD 032—32-Pin Plastic DIP
Dwg rev AD; 10/99
30
Am29F040B
21445E5 November 1, 2006
D A T A
S H E E T
PHYSICAL DIMENSIONS (continued)
PL 032—32-Pin Plastic Leaded Chip Carrier
Dwg rev AH; 10/99
November 1, 2006 21445E5
Am29F040B
31
D A T A
S H E E T
PHYSICAL DIMENSIONS (continued)
TS 032—32-Pin Standard Thin Small Package
Dwg rev AA; 10/99
32
Am29F040B
21445E5 November 1, 2006
D A T A
S H E E T
REVISION SUMMARY
Revision A (May 1997)
Revision C+1 (February 1999)
Initial release.
Command Definitions
Revision B (January 1998)
Global
Command Definitions table: Deleted “XX” from the
fourth cycle data column of the Sector Protect Verify
command.
Formatted for consistency with other 5.0 volt-only data
sheets.
Revision C+2 (May 17, 1999)
Test Specifications Table
Revision B+1 (January 1998)
AC Characteristics, Erase and Program Operations
Added Note references to tWHWH1. Corrected the parameter symbol for V CC Set-up Time to t VCS ; the
specification is 50 µs minimum. Deleted the last row in
table.
Revision B+2 (April 1998)
Corrected the input and output measurement entries in
the “All others” column.
Revision D (November 15, 1999)
AC Characteristics—Figure 9. Program Operations
Timing and Figure 10. Chip/Sector Erase
Operations
Distinctive Characteristics
Deleted tGHWL and changed OE# waveform to start at
high.
Changed minimum 100K write/erase cycles guaranteed to 1,000,000.
Physical Dimensions
Replaced figures with more detailed illustrations.
Ordering Information
Added extended temperature availability to the -55 and
-70 speed options.
Revision E0 (November 29, 2000)
Added table of contents.
AC Characteristics
Ordering Information
Erase and Program Operations; Erase and Program
Operations Alternate CE# Controlled Writes: Corrected
th e n o t e s r e fe r e n c e fo r t W H W H 1 a nd t W H W H 2 .
These parameters are 100% tested. Corrected the note
reference for tVCS. This parameter is not 100% tested.
Deleted burn-in option.
Erase and Programming Performance
Revision E2 (July 18, 2005)
Changed minimum 100K program and erase cycles
guaranteed to 1,000,000.
Revision E1 (October 4, 2004)
Added PB-Free option to Standard Ordering Matrix.
Updated Valid Combinations
Ordering Information
Updated for CS39S process technology.
In valid combinations list, added the following: Pb-free
options JD, JF, JK to set of -55 and -70 speed options;
Pb-free options PD, PF, PK, JD, JF, JK to the set of -90,
-120, and -150 speed options.
Distinctive Characteristics
Revision E3 (January 31, 2006)
Added 20-year data retention bullet.
Global
Revision C (January 1999)
Global
Removed 150 speed option from document.
DC Characteristics—TTL/NMOS Compatible
VOH: Changed the parameter description to “Output
High Voltage” from Output High Level”.
Removed 32-pin Reverse TSOP diagrams and all references from Ordering Information.
DC Characteristics—TTL/NMOS Compatible and
CMOS Compatible
Revision E4 (May 18, 2006)
ICC1, ICC2, ICC3: Added Note 2 “Maximum ICC specifications are tested with VCC = VCCmax”.
Revision E5 (November 1, 2006)
ICC3: Deleted VCC = VCCMax.
November 1, 2006 21445E5
Added migration and obsolescence information.
Deleted migration and obsolescence text.
Am29F040B
33
D A T A
S H E E T
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the
public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,
aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for
any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion Inc. will not be liable
to you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor
devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design
measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating
conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign
Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the prior authorization by the respective government entity will be required for export of those products.
Trademarks
Copyright ©2006 Spansion Inc. All rights reserved. Spansion, the Spansion logo, MirrorBit, ORNAND, HD-SIM, and combinations thereof, are
trademarks of Spansion Inc. Other company and product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
Copyright © 1997–2005 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. ExpressFlash™ is a trademark of Advanced Micro Devices, Inc. Product names used in this publication
are for identification purposes only and may be trademarks of their respective companies.
34
Am29F040B
21445E5 November 1, 2006