M1MA151WAT1, M1MA152WAT1 Preferred Device Common Anode Silicon Dual Switching Diodes These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−59 package which is designed for low power surface mount applications. http://onsemi.com 3 ANODE Features • Fast trr, < 10 ns • Low CD, < 15 pF • Pb−Free Packages are Available 2 CATHODE 1 MAXIMUM RATINGS (TA = 25°C) Symbol Rating Reverse Voltage Value Unit 40 80 Vdc 40 80 Vdc 100 150 mAdc 225 340 mAdc 500 750 mAdc Symbol Max Unit PD 200 mW SC−59 CASE 318D VR M1MA151WAT1 M1MA152WAT1 Peak Reverse Voltage 1 VRM M1MA151WAT1 M1MA152WAT1 Forward Current MARKING DIAGRAM IF Single Dual Peak Forward Current Mx M G G IFM Single Dual Peak Forward Surge Current Single Dual IFSM (Note 1) 1 THERMAL CHARACTERISTICS Rating Power Dissipation Junction Temperature TJ 150 °C Storage Temperature Tstg −55 to + 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. t = 1 SEC Mx = Device Code x = N for 151 O for 152 M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† M1MA151WAT1 SC−59 3000/Tape & Reel SC−59 (Pb−Free) 3000/Tape & Reel SC−59 3000/Tape & Reel SC−59 (Pb−Free) 3000/Tape & Reel M1MA151WAT1G M1MA152WAT1 M1MA152WAT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 9 1 Publication Order Number: M1MA151WAT1/D M1MA151WAT1, M1MA152WAT1 ELECTRICAL CHARACTERISTICS (TA = 25°C) Symbol Characteristic Condition Min Max Unit VR = 35 V VR = 75 V − 0.1 mAdc IF = 100 mA − 1.2 Vdc IR = 100 mA 40 80 − Vdc CD VR = 0, f = 1.0 MHz − 15 pF trr (Note 2) IF = 10 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR − 10 ns Reverse Voltage Leakage Current IR M1MA151WAT1 M1MA152WAT1 Forward Voltage VF Reverse Breakdown Voltage VR M1MA151WAT1 M1MA152WAT1 Diode Capacitance Reverse Recovery Time (Figure 1) 2. trr Test Circuit RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE tr OUTPUT PULSE tp t IF trr t 10% A RL Irr = 0.1 IR 90% VR tp = 2 ms tr = 0.35 ns Figure 1. Reverse Recovery Time Equivalent Test Circuit http://onsemi.com 2 IF = 10 mA VR = 6 V RL = 100 W M1MA151WAT1, M1MA152WAT1 IF, FORWARD CURRENT (mA) 100 10 TA = 85°C TA = 25°C 1.0 TA = −40°C 0.1 0.2 0.6 0.4 0.8 1.0 1.2 VF, FORWARD VOLTAGE (VOLTS) Figure 2. Forward Voltage IR , REVERSE CURRENT (μA) 10 TA = 150°C TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 0.001 TA = 25°C 0 10 20 30 40 50 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Leakage Current CD, DIODE CAPACITANCE (pF) 1.75 1.5 1.25 1.0 0.75 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 3 8 M1MA151WAT1, M1MA152WAT1 PACKAGE DIMENSIONS SC−59 CASE 318D−04 ISSUE G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. D 3 HE 2 DIM A A1 b c D E e L HE E 1 b e MIN 1.00 0.01 0.35 0.09 2.70 1.30 1.70 0.20 2.50 MILLIMETERS NOM MAX 1.15 1.30 0.06 0.10 0.43 0.50 0.14 0.18 2.90 3.10 1.50 1.70 1.90 2.10 0.40 0.60 2.80 3.00 MIN 0.039 0.001 0.014 0.003 0.106 0.051 0.067 0.008 0.099 INCHES NOM 0.045 0.002 0.017 0.005 0.114 0.059 0.075 0.016 0.110 MAX 0.051 0.004 0.020 0.007 0.122 0.067 0.083 0.024 0.118 C A L A1 SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.4 0.094 1.0 0.039 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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