LL700, LL700A SILICON EPITAXIAL PLANAR TYPE SCHOTTKY BARRIER DIODES for Ordinary Wave Detection for Super High Speed Switching Features • Low forward rise voltage (VF) and satisfactory wave • detection efficiency (η) • Small temperature coefficient of forward characteristic • Extremely low reverse current IR Absolute Maximum Ratings (Ta = 25oC) Parameter Reverse Voltage (DC) Symbol LL700 LL700 V 30 15 VRM LL700A Unit 15 VR LL700A Peak Reverse Voltage Rating V 30 Forward Current (DC) IF 30 mA Peak Forward Current IFM 150 mA Junction Temperature Tj 125 O -55 to +125 O Storage Temperature Range TS C C Characteristics at Ta = 25oC Parameter Symbol Forward Voltage (DC) Reverse LL700 Current (DC) LL700A Conditions Min Typ Max Unit VF1 IF = 1mA - - 0.4 VF2 IF = 30mA - - 1 VR = 15V - - 100 VR = 30V - - 150 VR = 1V, f = 1MHz - 1.3 - pF - 1 - ns - 60 - % IR Terminal Capacitance Ct Reverse Recovery Time* trr Detection Efficiency η IF = IR = 10mA Irr = 1mA, RL = 100Ω Vin = 3V(peak), f = 30MHz RL = 3.9kΩ, CL = 10pF V nA Note: (1) Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on Note: (1) the charge of a human body and the leakage of current from the operating equipment. Note: (2) Rated input / output frequency: 2,000MHz. Note: (3) *: trr measuring instrument SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/02/2003