AP4453GYT-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Small Size & Lower Profile ▼ RoHS Compliant & Halogen-Free BVDSS -30V RDS(ON) 13mΩ ID -12.8A G S D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The PMPAK ® 3x3 package is special for DC-DC converters application and lower 1.0mm profile with backside heat sink. D D D S S S G PMPAK ® 3x3 Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units -30 V +20 V 3 -12.8 A 3 -10.3 A Continuous Drain Current Continuous Drain Current 1 IDM Pulsed Drain Current -50 A PD@TA=25℃ Total Power Dissipation 3.13 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 5 ℃/W 40 ℃/W 1 201301101 AP4453GYT-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=-250uA -30 - - V VGS=-10V, ID=-10A - 10.1 13 mΩ VGS=-4.5V, ID=-6A - 15.2 20 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 -1.5 -3 V gfs Forward Transconductance VDS=-10V, ID=-10A - 22 - S IDSS Drain-Source Leakage Current VDS=-24V, VGS=0V - - -10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA ID=-10A - 24 38 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-15V - 6.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 10 - nC td(on) Turn-on Delay Time VDS=-15V - 11 - ns tr Rise Time ID=-1A - 9.5 - ns td(off) Turn-off Delay Time RG=3.3Ω - 80 - ns tf Fall Time VGS=-10V - 33 - ns Ciss Input Capacitance VGS=0V - 2960 4735 pF Coss Output Capacitance VDS=-15V - 305 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 265 - pF Rg Gate Resistance f=1.0MHz - 6.2 12.4 Ω Min. Typ. Max. Units Source-Drain Diode Symbol Parameter 2 Test Conditions VSD Forward On Voltage IS=-2.9A, VGS=0V - - -1.2 V trr Reverse Recovery Time IS=-10A, VGS=0V, - 20 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 6 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t <10sec ; 210oC/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP4453GYT-HF 60 60 T A =25 o C -10V -7.0V -6.0V -5.0V V G = -4.0V 40 -10V -7.0V -6.0V -5.0V V G = -4.0V 50 -ID , Drain Current (A) -ID , Drain Current (A) 50 T A = 150 o C 30 20 10 40 30 20 10 0 0 0 1 2 3 4 5 6 0 1 -V DS , Drain-to-Source Voltage (V) 2 3 4 5 6 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 20 1.6 I D = -10A V G = -10V I D = -6 A T A = 25 ℃ 18 Normalized RDS(ON) 1.4 RDS(ON) (mΩ) 16 14 12 1.2 1.0 0.8 10 8 0.6 2 4 6 8 10 -50 -V GS , Gate-to-Source Voltage (V) 0 50 100 150 o T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 10 2.0 I D = -250uA 1.6 Normalized VGS(th) -IS(A) 8 6 T j =150 o C T j =25 o C 4 1.2 0.8 0.4 2 0.0 0 0 0.2 0.4 0.6 0.8 1 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP4453GYT-HF f=1.0MHz 3500 8 I D = -10 A 3000 C iss 6 2500 C (pF) -VGS , Gate to Source Voltage (V) V DS = -15 V 2000 4 1500 1000 2 500 0 C oss C rss 0 0 10 20 30 1 40 5 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthja) 100 Operation in this area limited by RDS(ON) 100us 10 1ms -ID (A) 9 -V DS , Drain-to-Source Voltage (V) 10ms 1 100m s 0.1 1s T A =25 o C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM t 0.01 T Duty factor = t/T Peak Tj = PDM x Rthja + T a Single Pulse Rthia=210 ℃/W DC 0.001 0.01 0.01 0.1 1 10 0.0001 100 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 60 16 V DS = -5V T j =25 o C T j = -40 o C -ID , Drain Current (A) -ID , Drain Current (A) 50 T j =150 o C 40 30 20 12 8 4 10 0 0 0 2 4 6 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics 8 25 50 75 100 125 150 o T A , Ambient Temperature ( C ) Fig 12. Maximum Continuous Drain Current v.s. Ambient Temperature 4