NCE Power NCE20P70G Nce p-channel enhancement mode power mosfet Datasheet

Pb Free Product
NCE20P70G
http://www.ncepower.com
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE20P70G uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS =-20V,ID =-70A
Schematic diagram
RDS(ON) < 3mΩ @ VGS=-4.5V
RDS(ON) < 4mΩ @ VGS=-2.5V
RDS(ON) < 8mΩ @ VGS=-1.8V
● High density cell design for ultra low Rdson
Pin Assignment
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Application
● Load switch
● Battery protection
DFN5x6 -8L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCE20P70G
NCE20P70G
DFN 5x6 -8L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±10
V
ID
-70
A
ID (100℃)
-49.5
A
Pulsed Drain Current
IDM
-280
A
Maximum Power Dissipation
PD
130
W
0.64
W/℃
TJ,TSTG
-55 To 150
℃
RθJC
1.6
℃/W
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
Derating factor
Operating Junction and Storage Temperature Range
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
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Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-20
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=-20V,VGS=0V
-
-
1
μA
Gate-Body Leakage Current
IGSS
VGS=±10V,VDS=0V
-
-
±100
nA
VGS(th)
VDS=VGS,ID=-250μA
-0.4
-0.6
-1.0
V
VGS=-4.5V, ID=-20A
-
2.3
3
VGS=-2.5V, ID=-20A
-
2.8
4
3.8
8
100
-
-
S
-
4950
-
PF
-
380
-
PF
-
290
-
PF
-
20
-
nS
Off Characteristics
On Characteristics
(Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
RDS(ON)
VGS=-1.8V, ID=-20A
Forward Transconductance
Dynamic Characteristics
gFS
VDS=-5V,ID=-20A
mΩ
(Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Switching Characteristics
VDS=-10V,VGS=0V,
F=1.0MHz
Crss
(Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=-10V, RGEN=3Ω
-
50
-
nS
td(off)
VGS=-4.5V,RL=0.5Ω
-
100
-
nS
-
40
-
nS
-
100
-
nC
-
21
-
nC
-
32
-
nC
-
-
-1.2
V
-
-
-70
A
TJ = 25°C, IF = -10A
-
48
-
nS
(Note3)
-
55
-
nC
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=-10V,ID=-20A,
VGS=-4.5V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current
(Note 2)
Reverse Recovery Time
VSD
VGS=0V,IS=-20A
IS
trr
Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
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-ID- Drain Current (A)
Normalized On-Resistance
Typical Electrical and Thermal Characteristics (Curves)
TJ-Junction Temperature(℃)
-Vds Drain-Source Voltage (V)
Figure 4 Rdson-Junction Temperature
-ID- Drain Current (A)
Vgs Gate-Source Voltage (V)
Figure 1 Output Characteristics
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
Rdson On-Resistance (mΩ)
Is- Reverse Drain Current (A)
-Vgs Gate-Source Voltage (V)
- ID- Drain Current (A)
-Vsd Source-Drain Voltage (V)
Figure 3 Rdson- Drain Current
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Figure 6 Source- Drain Diode Forward
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NCE20P70G
Capacitance (pF)
Power Dissipation (W)
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Figure 7 Capacitance vs Vds
Figure 9 Power De-rating
-ID- Drain Current (A)
TJ-Junction Temperature(℃)
-ID- Drain Current (A)
-Vds Drain-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 8 Safe Operation Area
Figure 10 -Current De-rating
r(t),Normalized Effective
Transient Thermal Impedance
-Vds Drain-Source Voltage (V)
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
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DFN5X6-8L Package Information
Symbol
A
Dimensions In Millimeters
Dimensions In Inches
Min.
Max.
Min.
Max.
0.900
1.000
0.035
0.039
A3
0.254REF.
0.010REF.
D
4.944
5.096
0.195
0.201
E
5.974
6.126
0.235
0.241
D1
3.910
4.110
0.154
0.162
E1
3.375
3.575
0.133
0.141
D2
4.824
4.976
0.190
0.196
E2
5.674
5.826
0.223
0.229
K
1.190
1.390
0.047
0.055
b
0.035
0.450
0.014
0.018
e
1.270(TYP.)
0.050(TYP.)
L
0.559
0.711
0.022
0.028
L1
0.424
0.576
0.017
0.023
H
0.574
0.726
0.023
0.029
θ
8°
12°
8°
12°
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NCE20P70G
Attention:
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