Ordering number:EN3324 FC139 NPN Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp, General Driver Applications Features Package Dimensions · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC139 is formed with two chips, being equivalent to the 2SC3689, placed in one package. · Adoption of FBET process. · High DC current gain (hFE=800 to 3200). · High VEBO (VEBO≥15V) · Excellent in thermal equilibrium and pair capability. unit:mm 2067 [FC139] E1:Emitter 1 B1:Base 1 C2:Collector 2 E2:Emitter 2 B2:Base 2 C1:Collector 1 Electrical Connection SANYO:CP6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 60 V Collector-to-Emitter Voltage VCEO VEBO 50 V 15 V IC 100 mA Collector Current (Pulse) ICP 200 mA Base Current 20 mA Collector Dissipation IB PC 200 mW Total Dissipation PT 300 mW Junction Temperature Tj 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Emitter-to-Base Voltage Collector Current 1 unit Electrical Characteristics at Ta = 25˚C Parameter Symbol Collector Cutoff Current ICBO Emitter Cutoff Current IEBO DC Current Gain hFE DC Current Gain Ratio Gain-Bandwidth Product Output Capacitance hFE(small/ large) fT Cob Conditons Ratings min typ max VCB=40V, IE=0 VEB=10V, IC=0 VCE=5V, IC=10mA VCE=5V, IC=10mA 800 1500 0.8 0.98 VCE=10V, IC=10mA VCB=10V, f=1MHz 200 Unit 0.1 µA 0.1 µA 3200 MHz 1.5 pF C-E Saturation Voltage VCE(sat) IC=50mA, IB=1mA 0.1 0.5 V B-E Saturation Voltage VBE(sat) IC=50mA, IB=1mA 0.8 1.1 V C-B Breakdown Voltage V(BR)CBO IC=10µA, IE=0 60 V C-E Breakdown Voltage V(BR)CEO 50 V E-B Breakdown Voltage V(BR)EBO IC=1mA, RBE=∞ IE=10µA, IC=0 15 V Note:The specifications shown above are for each individual transistor. Marking:139 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/2080MO, TS No.3324-1/3 FC139 No.3324-2/3 FC139 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.3324-3/3