Intersil CA3039M96 Diode array Datasheet

CA3039
®
UCT
NT
RO D ACE M E a t
P
E
r
L
T
OLE
REP rt Cente tsc
/
OB S E N D E D
o
p
m
p
o
MM nical Su tersil.c
O
C
E
h
.in
NO R our Tec or www
t
L
c
I
a
cont -INTERS
8
1-88
December 2000
Features
Diode Array
Description
• Six Matched Diodes on a Common Substrate
• Excellent Reverse Recovery Time . . . . . . . . . 1ns (Typ)
• VF Match . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mV (Max)
• Low Capacitance . . . . . CD = 0.65pF (Typ) at VR = -2V
The CA3039 consists of six ultra-fast, low capacitance
diodes on a common monolithic substrate. Integrated circuit
construction assures excellent static and dynamic matching
of the diodes, making the array extremely useful for a wide
variety of applications in communication and switching
systems.
Five of the diodes are independently accessible, the sixth
shares a common terminal with the substrate.
Applications
• Ultra-Fast Low Capacitance Matched Diodes for
Applications in Communications and Switching
Systems
• Balanced Modulators or Demodulators
• Ring Modulators
For applications such as balanced modulators or ring
modulators where capacitive balance is important, the
substrate should be returned to a DC potential which is
significantly more negative (with respect to the active diodes)
than the peak signal applied.
Part Number Information
• High Speed Diode Gates
• Analog Switches
TEMP.
RANGE ( oC)
PACKAGE
CA3039
-55 to 125
12 Pin Metal Can
T12.B
CA3039M
-55 to 125
14 Ld SOIC
M14.15
CA3039M96
-55 to 125
14 Ld SOIC Tape
and Reel
M14.15
PART NUMBER
PKG.
NO.
Pinouts
CA3039
(SOIC)
TOP VIEW
1
D4
DS D 6
NC 6
7
2
D1
3
D2
10
9 NC
10
D5
D4
12
D6
D3
D2
11
D3
11
1
13 SUBSTRATE
4
5
12
14
D5
2
3
CA3039
(METAL CAN)
TOP VIEW
4
D1
5
9
DS
8
7
6
8
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2002. All Rights Reserved
1
File Number
343.4
CA3039
Absolute Maximum Ratings
Thermal Information
Inverse Voltage (PIV) for: D 1 - D5 . . . . . . . . . . . . . . . . . . . . . . . . 5V
D 6 . . . . . . . . . . . . . . . . . . . . . . . 0.5V
Diode-to-Substrate Voltage (VDI) for D1 - D5 . . . . . . . . . . . 20V, -1V
(Terminal 1, 4, 5, 8 or 12 to Terminal 10)
DC Forward Current (IF). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA
Recurrent Forward Current (IF) . . . . . . . . . . . . . . . . . . . . . . . 100mA
Forward Surge Current (IF(SURGE)) . . . . . . . . . . . . . . . . . . . 100mA
Thermal Resistance (Typical, Note 1)
θJA ( oC/W) θJC (oC/W)
Metal Can Package . . . . . . . . . . . . . . .
200
120
SOIC Package. . . . . . . . . . . . . . . . . . .
220
N/A
Maximum Power Dissipation (Any One Diode) . . . . . . . . . . . 100mW
Maximum Junction Temperature (Metal Can Package) . . . . . . . 175oC
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
TA = 25oC; Characteristics apply for each diode unit, Unless Otherwise Specified
PARAMETER
DC Forward Voltage Drop (Figure 1)
SYMBOL
TEST CONDITIONS
VF
MIN
TYP
MAX
UNITS
IF = 50µA
-
0.65
0.69
V
IF = 1mA
-
0.73
0.78
V
IF = 3mA
-
0.76
0.80
V
IF = 10mA
-
0.81
0.90
V
DC Reverse Breakdown Voltage
V(BR)R
IR = -10µA
5
7
-
V
DC Reverse Breakdown Voltage Between Any
Diode Unit and Substrate
V(BR)R
IR = -10µA
20
-
-
V
DC Reverse (Leakage) Current (Figure 2)
IR
VR = -4V
-
0.016
100
nA
DC Reverse (Leakage) Current Between Any
Diode Unit and Substrate (Figure 3)
IR
VR = -10V
-
0.022
100
nA
VF1 – VF2
IF = 1mA
-
0.5
5.0
mV
∆ V F1 – V F2
---------------------------------∆T
IF = 1mA
-
1.0
-
µV/oC
∆VF
----------∆T
IF = 1mA
-
-1.9
-
mV/oC
DC Forward Voltage Drop for Anode-toSubstrate Diode (DS)
VF
IF = 1mA
-
0.65
-
V
Reverse Recovery Time
tRR
IF = 10mA, IR = -10mA
-
1.0
-
ns
Diode Resistance (Figure 6)
RD
f = 1kHz, IF = 1mA
25
30
45
Ω
Diode Capacitance (Figure 7)
CD
VR = -2V, IF = 0
-
0.65
-
pF
Diode-to-Substrate Capacitance (Figure 8)
CDI
VDI = 4V, IF = 0
-
3.2
-
pF
Magnitude of Diode Offset Voltage (Note 2)
(Figure 1)
Temperature Coefficient of |VF1 - VF2| (Figure 4)
Temperature Coefficient of Forward Drop
(Figure 5)
NOTE:
2. Magnitude of Diode Offset Voltage is the difference in DC Forward Voltage Drops of any two diode units.
2
CA3039
Typical Performance Curves
10
TA = 25oC
VR = -4V
0.7
4
3
0.6
2
DIODE OFFSET ( VF1 – V F2 )
0.5
0.01
1
0.1
1
DC FORWARD CURRENT (mA)
10
DIODE OFFSET VOLTAGE (mV)
DC FORWARD VOLTAGE (V)
5
FORWARD VOLTAGE DROP (VF)
DC REVERSE CURRENT (nA)
6
0.8
DIODE OFFSET VOLTAGE ( V F1 – V F2 ) (mV)
DC REVERSE CURRENT (nA)
1
0.1
0.01
-25
0
25
50
TEMPERATURE (oC)
-50
-25
0
25
50
75
100
125
FIGURE 2. DC REVERSE (LEAKAGE) CURRENT (D1 - D5) vs
TEMPERATURE
VR = -10V
-50
0.01
TEMPERATURE (oC)
10
0.001
-75
0.1
0.001
-75
0
FIGURE 1. DC FORWARD VOLTAGE DROP (ANY DIODE) AND
DIODE OFFSET VOLTAGE vs DC FORWARD
CURRENT
100
1
75
100
125
FIGURE 3. DC REVERSE (LEAKAGE) CURRENT BETWEEN D1,
D2, D3, D4, D5 AND SUBSTRATE vs TEMPERATURE
4
IF = 10mA
3
2
0.7
0.6
IF = 1mA
0.5
IF = 0.1mA
0.4
0.3
-75
-50
-25
0
25
50
TEMPERATURE (oC)
75
100
FIGURE 4. DIODE OFFSET VOLTAGE (ANY DIODE) vs
TEMPERATURE
3
125
CA3039
Typical Performance Curves
(Continued)
1000
TA = 25o C
f = 1kHz
IF = 1mA
DIODE RESISTANCE (Ω)
DC FORWARD VOLTAGE (V)
0.9
0.8
0.7
0.6
100
10
0.5
1
0.01
0.4
-75
-50
-25
0
25
50
75
100
125
0.1
DIODE CAPACITANCE (pF)
TA = 25oC
IF = 0
5
4
3
2
1
0
1
2
10
FIGURE 6. DIODE RESISTANCE (ANY DIODE) vs DC
FORWARD CURRENT
DIODE TO SUBSTRATE CAPACITANCE (pF)
FIGURE 5. DC FORWARD VOLTAGE DROP (ANY DIODE) vs
TEMPERATURE
6
1
DC FORWARD CURRENT (mA)
TEMPERATURE (oC)
3
4
6
TA = 25oC
IF = 0
5
4
3
2
1
0
0
1
2
3
4
DC REVERSE VOLTAGE BETWEEN TERMINALS 1, 4, 5, 8, OR 12
AND SUBSTRATE (TERMINAL 10) (V)
DC REVERSE VOLTAGE ACROSS DIODE (V)
FIGURE 7. DIODE CAPACITANCE (D1 - D5) vs REVERSE
VOLTAGE
FIGURE 8. DIODE-TO-SUBSTRATE CAPACITANCE vs
REVERSE VOLTAGE
4
Similar pages