Preliminary Datasheet BCR12FM-14LB R07DS1064EJ0100 Rev.1.00 Apr 10, 2013 700V - 12A - Triac Medium Power Use Features Insulated Type Planar Passivation Type Viso : 2000V IT (RMS) : 12 A VDRM : 800 V (Tj =125 °C) Tj: 150 °C IFGTI, IRGTI, IRGT III :30 mA Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 2 3 Applications Washing machine, inversion operation of capacitor motor, and other general controlling devices Maximum Ratings Parameter Symbol Voltage class 14 800 700 840 Repetitive peak off-state voltageNote1 VDRM Non-repetitive peak off-state voltageNote1 VDSM Parameter RMS on-state current Symbol IT (RMS) Ratings 12 Unit A Surge on-state current ITSM 120 A I2 t 60 A2s PGM PG (AV) VGM IGM Tj Tstg — Viso 5 0.5 10 2 –40 to +150 –40 to +150 1.9 2000 W W V A C C g V I2t for fusion Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction Temperature Storage temperature Mass Isolation voltage Note5 R07DS1064EJ0100 Rev.1.00 Apr 10, 2013 Unit Conditions V Tj=125C Tj=150C V Conditions Commercial frequency, sine full wave 360conduction, Tc = 102C 50Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 50Hz, surge on-state current Typical value Ta = 25C, AC 1 minute, T1 T2 G terminal to case Page 1 of 7 BCR12FM-14LB Preliminary Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Symbol IDRM VTM Min. — — Typ. — — Max. 2.0 1.6 Unit mA V Test conditions Tj = 150C, VDRM applied Tc = 25C, ITM = 20 A, instantaneous measurement Gate trigger voltageNote2 VFGT VRGT VRGT — — — — — — 1.5 1.5 1.5 V V V Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Gate trigger curentNote2 IFGT IRGT IRGT — — — — — — 30 30 30 mA mA mA Tj = 25C, VD = 6 V, RL = 6 , RG = 330 VGD 0.2 0.1 — 10 1 — — — — — — — 3.3 — — V V C/W V/s V/s Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutation voltageNote4 Rth (j-c) (dv/dt)c Tj = 125C, VD = 1/2 VDRM Tj = 150C, VD = 1/2 VDRM Junction to caseNote3 Tj = 125C Tj = 150C Notes: 1. Gate open. 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C /W. 4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below. 5. Make sure that your finished product containing this device meets your safe isolation requirements. For safety, it's advisable that heatsink is electrically floating. Test conditions 1. Junction temperature Tj = 125C/150C 2. Rate of decay of on-state commutating current (di/dt)c = –6.0 A/ms 3. Peak off-state voltage VD = 400 V R07DS1064EJ0100 Rev.1.00 Apr 10, 2013 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD Page 2 of 7 BCR12FM-14LB Preliminary Performance Curves Maximum On-State Characteristics 3 2 Tj = 150°C 101 7 5 3 2 100 7 5 0.5 Tj = 25°C 1.0 1.5 2 2.5 3.0 3.5 140 120 100 80 60 40 20 2 3 4 5 7 101 2 3 4 5 7 102 Conduction Time (Cycles at 60Hz) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature VGM = 10V PGM = 5W PG(AV) = 0.5W IGM = 2A 100 7 5 3 2 IRGT I IFGT I, IRGT III VGD = 0.1V 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 160 On-State Voltage (V) 101 7 5 3 VGT = 1.5V 2 10–1 180 0 100 4.0 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) 5 3 2 Gate Voltage (V) Surge On-State Current (A) 200 103 7 5 4 3 2 102 7 5 4 3 2 Typical Example IRGT I, IRGT III IFGT I 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 7 5 4 3 2 Typical Example 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) R07DS1064EJ0100 Rev.1.00 Apr 10, 2013 Transient Thermal Impedance (°C/W) On-State Current (A) 102 7 5 Rated Surge On-State Current 102 2 3 5 7 103 2 3 5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60Hz) Page 3 of 7 BCR12FM-14LB Preliminary 7 5 3 2 No Fins 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 14 12 360° Conduction Resistive, 10 inductive loads 8 6 4 2 0 0 4 6 8 10 12 14 16 RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 140 140 Ambient Temperature (°C) 160 120 100 Curves apply regardless of conduction angle 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 2 4 6 8 10 12 14 16 All fins are black painted aluminum and greased 120 × 120 × t2.3 120 100 100 × 100 × t2.3 80 60 × 60 × t2.3 60 Curves apply regardless of 40 conduction angle Resistive, 20 inductive loads Natural convection 0 0 2 4 6 8 10 12 14 16 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Repetitive Peak Off-State Current vs. Junction Temperature Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 2 Conduction Time (Cycles at 60Hz) 160 160 Ambient Temperature (°C) 16 On-State Power Dissipation (W) 103 Maximum On-State Power Dissipation 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) R07DS1064EJ0100 Rev.1.00 Apr 10, 2013 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Case Temperature (°C) Transient Thermal Impedance (°C/W) Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 105 7 Typical Example 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Page 4 of 7 BCR12FM-14LB Preliminary 103 7 5 4 3 2 Latching Current (mA) Typical Example 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 Distribution T2+, G– Typical Example 102 7 5 3 2 101 7 5 3 2 T2+, G+ Typical Example T2–, G– 100 –40 0 40 80 120 160 Junction Temperature (°C) Breakover Voltage vs. Junction Temperature Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) Typical Example 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 160 Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) Breakover Voltage (t°C) × 100 (%) Breakover Voltage (25°C) 103 7 5 3 2 Junction Temperature (°C) 160 Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) Latching Current vs. Junction Temperature 160 Typical Example Tj = 125°C 140 120 III Quadrant 100 80 60 I Quadrant 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/μs) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) Commutation Characteristics (Tj=125°C) 160 140 Typical Example Tj = 150°C 120 III Quadrant 100 80 60 I Quadrant 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Rate of Rise of Off-State Voltage (V/μs) R07DS1064EJ0100 Rev.1.00 Apr 10, 2013 Critical Rate of Rise of Off-State Commutating Voltage (V/μs) Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Holding Current vs. Junction Temperature 102 7 5 III Quadrant 3 2 101 7 Minimum 5 Characteristics Value 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time Typical Example Tj = 125°C IT = 4A τ = 500μs VD = 200V f = 3Hz I Quadrant 100 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Rate of Decay of On-State Commutating Current (A/ms) Page 5 of 7 BCR12FM-14LB Preliminary Gate Trigger Current vs. Gate Current Pulse Width 102 7 5 Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Critical Rate of Rise of Off-State Commutating Voltage (V/μs) Commutation Characteristics (Tj=150°C) Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 3 2 III Quadrant 101 7 5 I Quadrant Typical Example Tj = 150°C IT = 4A τ = 500μs VD = 200V f = 3Hz 3 Minimum Characteristics 2 Value 100 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 103 7 5 4 3 2 Typical Example IFGT I IRGT I IRGT III 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Gate Current Pulse Width (μs) Gate Trigger Characteristics Test Circuits Recommended Circuit Values Around The Triac 6Ω 6Ω Load C1 A 6V V R1 A 6V 330Ω V 330Ω Test Procedure II Test Procedure I C0 R0 C1 = 0.1 to 0.47μF C0 = 0.1μF R1 = 47 to 100Ω R0 = 100Ω 6Ω A 6V V 330Ω Test Procedure III R07DS1064EJ0100 Rev.1.00 Apr 10, 2013 Page 6 of 7 BCR12FM-14LB Preliminary Package Dimensions Package Name TO-220FP JEITA Package Code ⎯ RENESAS Code PRSS0003AG-A Previous Code ⎯ MASS[Typ.] 1.9g Unit: mm 10.16 ± 0.20 2.54 ± 0.20 6.68 ± 0.20 3.3 ± 0.2 1.28 ± 0.30 3.18 ± 0.20 12.98 ± 0.30 15.87 ± 0.20 φ 3.18 ± 0.10 Max 1.47 2.76 ± 0.20 0.80 ± 0.20 0.50 4.7 ± 0.2 5.08 ± 0.20 Ordering Information Orderable Part Number BCR12FM-14LB#BB0 BCR12FM-14LBA8#BB0 Packing Tube Tube Quantity 50 pcs. 50 pcs. 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