AP2302N
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 2.5V gate drive
▼ Small package outline
D
▼ Surface mount package
BVDSS
20V
RDS(ON)
85mΩ
ID
3.2A
S
SOT-23
Description
G
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
D
G
S
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
20
V
±12
V
3
3.2
A
3
2.6
A
10
A
Continuous Drain Current , VGS @ 4.5V
Continuous Drain Current , VGS @ 4.5V
1,2
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
1.38
W
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
90
℃/W
200503044
AP2302N
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
20
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.1
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=4.5V, ID=3.6A
-
-
85
mΩ
VGS=2.5V, ID=3.1A
-
-
115
mΩ
VDS=VGS, ID=250uA
0.5
-
1.2
V
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VGS=0V, ID=250uA
VDS=5V, ID=3.6A
-
6
-
S
o
VDS=20V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=20V ,VGS=0V
-
-
10
uA
Gate-Source Leakage
VGS=±12V
-
-
±100
nA
ID=3.6A
-
4.4
-
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=10V
-
0.6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
1.9
-
nC
VDS=10V
-
5.2
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=3.6A
-
37
-
ns
td(off)
Turn-off Delay Time
RG=6Ω,VGS=5V
-
15
-
ns
tf
Fall Time
RD=2.8Ω
-
5.7
-
ns
Ciss
Input Capacitance
VGS=0V
-
145
-
pF
Coss
Output Capacitance
VDS=10V
-
100
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
50
-
pF
Min.
Typ.
-
-
1
A
-
-
10
A
-
-
1.2
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.2V
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
1
2
Forward On Voltage
IS=1.6A, VGS=0V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
Max. Units
AP2302N
7
10
o
4.5V
3.5V
3.0V
2.5V
ID , Drain Current (A)
8
o
T A =150 C
6
ID , Drain Current (A)
T A =25 C
6
4
V G =2.0V
4.5V
3.5V
3.0V
2.5V
5
4
V G =2.0V
3
2
2
1
0
0
0.0
0.5
1.0
1.5
2.0
0.0
2.5
0.5
1.0
1.5
2.0
2.5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
100
I D =3.6A
I D = 3.1 A
1.6
o
V G =4.5V
T A =25 C
Normalized R DS(ON)
RDS(ON) (mΩ )
90
80
1.4
1.2
1.0
70
0.8
0.6
60
2
3
4
-50
5
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
1.4
10.0
VGS(th) (V)
IF (A)
1.0
1.0
T j =150 o C
T j =25 o C
0.6
0.2
0.1
0.1
0.5
0.9
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.3
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP2302N
VGS , Gate to Source Voltage (V)
12
f=1.0MHz
1000
I D =3.6A
V DS =4.5V
10
C (pF)
8
6
C iss
100
C oss
4
C rss
2
10
0
0
2
4
6
8
1
10
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthja)
100
10
ID (A)
9
V DS , Drain-to-Source Voltage (V)
1ms
1
10ms
0.1
100ms
T A =25 o C
Single Pulse
1s
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.01
T
0.01
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 270℃
℃ /W
DC
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q