KEC BC817 Epitaxail planar npn transistor(for general purpose, switching) Datasheet

SEMICONDUCTOR
BC817
TECHNICAL DATA
EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
B
L
L
FEATURES
D
·Complementary to BC807.
3
H
G
A
2
1
MAXIMUM RATING (Ta=25℃)
Q
UNIT
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
45
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
800
mA
Emitter Current
IE
-800
mA
PC*
350
mW
Tj
150
℃
Tstg
-55~150
℃
P
P
K
J
RATING
N
SYMBOL
C
CHARACTERISTIC
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
Q
MILLIMETERS
2.93 +_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
0.1 MAX
M
1. EMITTER
2. BASE
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
3. COLLECTOR
SOT-23
* : Package Mounted On 99.9% Alumina 10×8×0.6mm.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=20V, IE=0
-
-
0.1
μA
Emitter Cut-off Current
IEBO
VEB=5V, IC=0
-
-
0.1
μA
hFE(1)
VCE=1V, IC=100mA
100
-
630
hFE(2)
VCE=1V, IC=500mA
40
-
-
VCE(sat)
IC=500mA, IB=50mA
-
-
0.7
V
Base-Emitter Voltage
VBE
VCE=1V, IC=500mA
-
-
1.2
V
Transition Frequency
fT
100
-
-
MHz
-
5
-
pF
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
Cob
Collector Output Capacitance
Note : hFE(1) Classification
VCE=5V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1MHz
16:100~250 , 25:160~400 , 40:250~630
Marking
MARK SPEC
Lot No.
TYPE
BC817-16
BC817-25
BC817-40
MARK
6A
6B
6C
2009. 2. 19
Revision No : 5
Type Name
1/2
BC817
h FE - I C
I C - VCE
COLLECTOR CURRENT IC (mA)
COMMON EMITTER
VCE =1V
500
300
Ta=100 C
Ta=25 C
100
50
Ta=-25 C
30
800
COMMON EMITTER
Ta=25 C
7
6
5
4
400
3
2
200
I B =1mA
0
0
100
300
0
1000
1
2
100
0.01
10
C
Ta=
0.03 Ta=100 C
Ta=-25 C
30
100
300
C
100
30
10
3
1
0.2
1000
0.6
0.8
1.0
fT - I C
P C - Ta
COMMON EMITTER
Ta=25 C
VCE =5V
100
30
10
3
10
30
100
300
1000
500
400
300
200
100
0
0
COLLECTOR CURRENT I C (mA)
2009. 2. 19
0.4
BASE-EMITTER VOLTAGE V BE (V)
500
TRANSITION FREQUENCY
f T (MHz)
300
COLLECTOR CURRENT I C (mA)
300
6
COMMON EMITTER
VCE =1V
100
0.3
1000
Ta=
COLLECTOR CURRENT I C (mA)
COMMON EMITTER
I C /IB =25
COLLECTOR POWER DISSIPATION
P C (mW)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (V)
3
0.1
5
I C - V BE
VCE(sat) - I C
Ta=25 C
4
COLLECTOR-EMITTER VOLTAGE V CE (V)
COLLECTOR CURRENT IC (mA)
1
3
Ta=25 C
30
C
10
10
1
8
600
Ta=
25
DC CURRENT GAIN h FE
1000
Revision No : 5
25
50
75
100
125
150
175
AMBIENT TEMPERATURE Ta ( C)
2/2
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