BLF188XRG
Power LDMOS transistor
Rev. 1 — 30 June 2014
Product data sheet
1. Product profile
1.1 General description
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 600 MHz band.
Table 1.
Application information
Test signal
f
VDS
PL
Gp
D
(MHz)
(V)
(W)
(dB)
(%)
CW
108
50
1200
26.5
83
pulsed RF
108
50
1400
28
72
pulsed RF
81.4
50
1200
25.8
85
1.2 Features and benefits
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 600 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications
BLF188XRG
NXP Semiconductors
Power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
1
drain1
2
drain2
3
gate1
4
gate2
5
Simplified outline
Graphic symbol
[1]
source
V\P
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
BLF188XRG
Package
Name
Description
Version
-
earless flanged LDMOST ceramic package; 4 leads
SOT1248C
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDS
Min
Max
Unit
drain-source voltage
-
135
V
VGS
gate-source voltage
6
+11
V
Tstg
storage temperature
65
+150
C
Tj
junction temperature
-
225
C
[1]
Conditions
[1]
Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Product data sheet
Tj = 150 C
Rth(j-c)
thermal resistance from junction to case
Zth(j-c)
transient thermal impedance from junction Tj = 150 C; tp = 100 s;
to case
= 20 %
[1]
BLF188XRG
Conditions
Typ
Unit
[1][2]
0.10
K/W
[3]
0.03
K/W
Tj is the junction temperature.
[2]
Rth(j-c) is measured under RF conditions.
[3]
See Figure 1.
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Rev. 1 — 30 June 2014
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BLF188XRG
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Power LDMOS transistor
DDD
=WK MF
.:
WS V
(1) = 1 %
(2) = 2 %
(3) = 5 %
(4) = 10 %
(5) = 20 %
(6) = 50 %
(7) = 100 % (DC)
Fig 1.
Transient thermal impedance from junction to case as a function of pulse
duration
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C; per section unless otherwise specified.
BLF188XRG
Product data sheet
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
VGS = 0 V; ID = 5.5 mA
135
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 550 mA
1.25
1.9
2.25
V
VGSq
gate-source quiescent voltage
VDS = 50 V; ID = 20 mA
0.68
1.3
1.8
V
IDSS
drain leakage current
VGS = 0 V; VDS = 50 V
-
-
2.8
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
-
77
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
280
nA
RDS(on)
drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 19.25 A
-
0.08
-
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Rev. 1 — 30 June 2014
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BLF188XRG
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Power LDMOS transistor
Table 7.
AC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol
Parameter
Conditions
Min Typ
Max Unit
Crs
feedback capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz
-
6.2
-
pF
Ciss
input capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz
-
582
-
pF
Coss
output capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz
-
212
-
pF
Table 8.
RF characteristics
Test signal: pulsed RF; tp = 100 s; = 20 %; f = 108 MHz; RF performance at VDS = 50 V;
IDq = 40 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Gp
power gain
PL = 1400 W
23.2
24.4
-
dB
RLin
input return loss
PL = 1400 W
-
21
14
dB
D
drain efficiency
PL = 1400 W
69
73
-
%
DDD
&RVV
S)
9'6 9
VGS = 0 V; f = 1 MHz.
Fig 2.
Output capacitance as a function of drain-source voltage; typical values per
section
7. Test information
7.1 Ruggedness in class-AB operation
The BLF188XRG is capable of withstanding a load mismatch corresponding to
VSWR > 65 : 1 through all phases under the following conditions: VDS = 50 V;
IDq = 40 mA; PL = 1400 W pulsed; f = 108 MHz.
BLF188XRG
Product data sheet
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Rev. 1 — 30 June 2014
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BLF188XRG
NXP Semiconductors
Power LDMOS transistor
7.2 Impedance information
GUDLQ
JDWH
=/
=L
JDWH
GUDLQ
DDQ
Fig 3.
Definition of transistor impedance
Table 9.
Typical push-pull impedance
Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL = 1400 W.
f
Zi
ZL
(MHz)
()
()
108
2.94 j9.64
2.74 + j0.57
7.3 UIS avalanche energy
Table 10. Typical avalanche data per section
Tamb = 25 C; typical test data; test jig without water cooling.
IAS
EAS
(A)
(J)
35
4.5
40
3.4
45
2.4
50
2.0
For information see application note AN10273.
DDD
($6
Fig 4.
BLF188XRG
Product data sheet
,$6 $
Non-repetitive avalanche energy as a function of single pulse avalanche current,
typical values
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Rev. 1 — 30 June 2014
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BLF188XRG
NXP Semiconductors
Power LDMOS transistor
7.4 Test circuit
PP
PP
7
&
/
&
&
/
&
&
/
PP
&
&
/
5
&
&
&
&
&
/
&
&
/
&
&
&
&
&
/
&
&
&
5
/
&
7
&
DDD
PP
PP
PP
Printed-Circuit Board (PCB): RF 35; r = 3.5; thickness = 0.765 mm; thickness copper plating = 35 m, gold plated.
See Table 11 for a list of components.
Fig 5.
Component layout for class-AB production test circuit
Table 11. List of components
For test circuit see Figure 5.
Component
BLF188XRG
Product data sheet
Description
Value
Remarks
C1, C2, C6, C7,
C16, C17, C23,
C24
multilayer ceramic chip capacitor 1000 pF
[1]
C3
multilayer ceramic chip capacitor 47 pF
[2]
C4
multilayer ceramic chip capacitor 39 pF
[1]
C5
multilayer ceramic chip capacitor 200 pF
[1]
C8, C9, C14, C15
multilayer ceramic chip capacitor 4.7 F, 100 V
TDK
C5750X7R2A475KT
C10, C11
electrolytic capacitor
2200 F, 63 V
C12, C13
electrolytic capacitor
470 F, 63 V
C18, C19
multilayer ceramic chip capacitor 120 pF
[1]
C20
multilayer ceramic chip capacitor 82 pF
[1]
C21
multilayer ceramic chip capacitor 120 pF
[1]
C22
multilayer ceramic chip capacitor 56 pF
[1]
L1, L2, L3, L4
1.5 turn 0.8 mm copper wire
D = 3.2 mm,
length = 1.6 mm
L5, L6
5.0 turn 0.8 mm copper wire
D = 3.0 mm,
length = 4 mm
L7, L8
2.5 turn 0.8 mm copper wire
D = 3.0 mm,
length = 2.4 mm
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Rev. 1 — 30 June 2014
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BLF188XRG
NXP Semiconductors
Power LDMOS transistor
Table 11. List of components …continued
For test circuit see Figure 5.
Component
Description
Value
Remarks
R1, R2
resistor
9.1
SMD 1206
T1
semi rigid coax
25 ,
length = 160 mm
Micro-Coax
UT-090C-25
T2
semi rigid coax
25 ,
length = 160 mm
Micro-Coax
UT-141C-25
[1]
American Technical Ceramics type 800B or capacitor of same quality.
[2]
American Technical Ceramics type 100B or capacitor of same quality.
7.5 Graphical data
The following figures are measured in a class-AB production test circuit.
7.5.1 1-Tone CW pulsed
DDD
Ș'
*S
G%
OGHDO3/
*S
DDD
3/
G%P
3/
Ș'
3/ :
VDS = 50 V; IDq = 40 mA; f = 108 MHz; tp = 100 s;
= 20 %.
3L G%P
VDS = 50 V; IDq = 40 mA; f = 108 MHz; tp = 100 s;
= 20 %.
(1) PL(1dB) = 61.58 dBm (1440 W)
(2) PL(3dB) = 61.98 dBm (1580 W)
Fig 6.
Power gain and drain efficiency as function of
output power; typical values
BLF188XRG
Product data sheet
Fig 7.
Output power as a function of input power;
typical values
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Rev. 1 — 30 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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BLF188XRG
NXP Semiconductors
Power LDMOS transistor
DDD
DDD
*S
G%
Ș'
3/ :
VDS = 50 V; f = 108 MHz; tp = 100 s; = 20 %.
(1) IDq = 20 mA
(2) IDq = 40 mA
(2) IDq = 40 mA
(3) IDq = 80 mA
(3) IDq = 80 mA
(4) IDq = 160 mA
(4) IDq = 160 mA
Power gain as a function of output power;
typical values
Fig 9.
DDD
3/ :
VDS = 50 V; f = 108 MHz; tp = 100 s; = 20 %.
(1) IDq = 20 mA
Fig 8.
Drain efficiency as a function of output power;
typical values
DDD
*S
G%
Ș'
3/ :
IDq = 40 mA; f = 108 MHz; tp = 100 s; = 20 %.
IDq = 40 mA; f = 108 MHz; tp = 100 s; = 20 %.
(1) VDS = 25 V
(1) VDS = 25 V
(2) VDS = 30 V
(2) VDS = 30 V
(3) VDS = 35 V
(3) VDS = 35 V
(4) VDS = 40 V
(4) VDS = 40 V
(5) VDS = 45 V
(5) VDS = 45 V
(6) VDS = 50 V
(6) VDS = 50 V
Fig 10. Power gain as a function of output power;
typical values
BLF188XRG
Product data sheet
3/ :
Fig 11. Drain efficiency as a function of output power;
typical values
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Rev. 1 — 30 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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BLF188XRG
NXP Semiconductors
Power LDMOS transistor
8. Package outline
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Fig 12. Package outline SOT1248C
BLF188XRG
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 30 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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BLF188XRG
NXP Semiconductors
Power LDMOS transistor
9. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
10. Abbreviations
Table 12.
Abbreviations
Acronym
Continuous Wave
CW
Continuous Wave
ESD
ElectroStatic Discharge
HF
High Frequency
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
LDMOST
Laterally Diffused Metal-Oxide Semiconductor Transistor
MTF
Median Time to Failure
SMD
Surface Mounted Device
UIS
Unclamped Inductive Switching
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 13.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLF188XRG v.1
20140630
Product data sheet
-
-
BLF188XRG
Product data sheet
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Rev. 1 — 30 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BLF188XRG
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 30 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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Power LDMOS transistor
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLF188XRG
Product data sheet
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Rev. 1 — 30 June 2014
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Power LDMOS transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.3
7.4
7.5
7.5.1
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 4
Ruggedness in class-AB operation . . . . . . . . . 4
Impedance information . . . . . . . . . . . . . . . . . . . 5
UIS avalanche energy . . . . . . . . . . . . . . . . . . . 5
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 7
1-Tone CW pulsed . . . . . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Handling information. . . . . . . . . . . . . . . . . . . . 10
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2014.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 30 June 2014
Document identifier: BLF188XRG