GaAs IC Control FET Series DC–2.5 GHz AF002C1-39, AF002C4-39 Features SOT-23 ■ Low Cost SOT-23 Package 0.120 (3.05 mm) 0.110 (2.79 mm) ■ Series or Shunt Configuration ■ Low DC Current Drain 0.018 (0.45 mm) 0.015 (0.38 mm) 3 0.055 (1.40 mm) 0.047 (1.19 mm) ■ Ideal Switch Building Blocks 0.104 (2.64 mm) 0.083 (2.10 mm) 0.024 (0.61 mm) 0.018 (0.45 mm) ■ Pin Diode Replacements ■ High Power Antenna Switches 1 2 0.040 (1.02 mm) 0.037 (0.94 mm) 0.080 (2.03 mm) 0.070 (1.78 mm) 0.007 (0.18 mm) 0.003 (0.08 mm) Description This group of GaAs control FETs can be used in both series and shunt configurations. They incorporate on-chip circuitry that eliminates the need for extra bias components and minimizes power drain to typically 25 µW. These features make the device ideal replacements for PIN diodes, where low DC drain is critical. Isolation performance degrades at higher frequencies due to package parasitics. They can be tuned out in narrow band applications as shown in the circuit examples on the following pages. 0.027 (0.69 mm) REF. 0.004 (0.10 mm) 0.0005 (0.01 mm) 0.045 (1.14 mm) 0.035 (0.89 mm) Electrical Specifications at 25°C (0, -5 V) Part Number1 Frequency2 (GHz) AF002C1-39 AF002C4-39 Ω)3 RON (Ω Typ. Max. Insertion Loss (dB)4,5 Series COFF (pF)6 Shunt Typ. Max. Isolation (db)5 Series Shunt P-1 dB (W) Typ. DC–0.5 GHz 6.4 9.0 0.50 0.10 0.13 0.25 25 12 0.5 DC–1.0 GHz 6.4 9.0 0.60 0.15 0.13 0.25 17 8 1.0 DC–2.5 GHz 6.4 9.0 0.70 0.20 0.13 0.25 13 3 1.0 DC–0.5 GHz 0.8 1.1 0.20 0.15 1.10 1.50 11 15 6 DC–1.0 GHz 0.8 1.1 0.25 0.25 1.10 1.50 6 9 10 DC–2.5 GHz 0.8 1.1 0.30 2.00 1.10 1.5 3 4 10 Operating Characteristics at 25°C (0, -5 V) Parameter Condition Frequency Switching Characteristics Rise, Fall (10/90% or 90/10% RF) On, Off (50% CTL to 90/10% RF) Control Voltages VLow = 0 to -0.2 V @ 20 µA Max. VHigh = -5 V @ 50 µA to -9 V @ 200 µA Max. Min. Typ. 6 12 Max. Unit ns ns 1. All measurements made in a 50 Ω system, unless otherwise specified. 2. DC = 300 kHz. 3. RON - resistance in Ω in low impedance state when “0” V is applied to Gate (G). 4. Insertion loss changes by 0.003 dB/°C. 5. Insertion loss and isolation typical values. 6. COFF - capacitance (pF) in high impedance state when -5 V is applied to Gate (G). Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 3/99A 1 GaAs IC Control FET Series DC–2.5 GHz AF002C1-39, AF002C4-39 Typical Performance Data (0, -5 V) 50 0.8 45 40 0.6 C1 Isolation (dB) Insertion Loss (dB) 0.7 0.5 0.4 0.3 0.2 30 25 20 15 C1 10 C4 0.1 C4 5 0 0 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 Frequency (GHz) Frequency (GHz) Insertion Loss vs. Frequency Series Configuration Isolation vs. Frequency Series Configuration 0.8 3 30 0.7 25 0.6 Isolation (dB) Insertion Loss (dB) 35 0.5 0.4 0.3 C4 20 C4 15 10 C1 0.2 5 0.1 C1 0 0 0.5 1 1.5 2 2.5 0 3 0 0.5 1 1.5 2 2.5 Frequency (GHz) Frequency (GHz) Insertion Loss vs. Frequency Shunt Configuration Isolation vs. Frequency Shunt Configuration 3 Absolute Maximum Ratings AF002C1-39 AF002C4-39 Characteristic Value RF Input Power 2 W > 500 MHz 0/-8 V 0.5 W @ 50 MHz 0/-8 V Control Voltage +0.2 V, -10 V Operating Temperature -40°C to +85°C Storage Temperature -65°C to +150°C ΘJC Characteristic RF Input Power Control Voltage Value 12 W > 450 MHz, 0/-12 V +0.2, -12 V Operating Temperature -40°C to +85°C Storage Temperature -65°C to +150°C ΘJC 25°C/W 25°C/W Note: Exceeding these parameters may cause irreversible damage. 2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 3/99A GaAs IC Control FET Series DC–2.5 GHz AF002C1-39, AF002C4-39 T/R and Antenna Changeover Switch for Mobile Cellular Systems Mobile Antenna Phone Antenna Diplexer LNA PA Changeover Switch T/R Switch From Transmitter To Receiver Disconnect T/R Switch System Block Diagram T/R Switch Schematic Changeover Switch Schematic Antenna Antenna LT (nH) D λ/4 S TX CT RX D S 10 kΩ GaAs FET AF002C Series G C (pF) G VCTL D G GaAs FET AF002C Series S VCTL Truth Table for T/R Switch To T/R Switch Truth Table for Changeover Switch VCTL (V) TX to Antenna RX to Antenna VCTL (V) Antenna 0 Low Loss High Isolation -5 Connected -5 High Isolation Low Loss 0 Isolated See next page for positive voltage operation. See next page for positive voltage operation. Component Values for T/R Switch Circuit Part Number LT (nH) CT (pF) Freq. (GHz) AF002C1-39 165 18.8 0.45 AF002C4-39 85 18.8 0.45 AF002C1-39 44 4.7 0.90 AF002C4-39 22 4.7 0.90 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 3/99A 3 GaAs IC Control FET Series DC–2.5 GHz Pin Out AF002C1-39, AF002C4-39 Positive Voltage Operation DRAIN (D) SOURCE (S) VS RF 2 RF 1 10 kΩ CT D 2 1 S 3 GATE (G) 3 Truth Table Negative Voltage Operation S D G (0, VHigh) G Shunt Configuration RF Path VS Shunt GND RF -5 Insertion Loss 0 Isolation 10 kΩ RF Series RF CBL CBL D RF 0 Insertion Loss -5 Isolation G RF Path 0 Insertion Loss VHigh Isolation 0 Isolation VHigh Insertion Loss LT 2 1 RF S Positive Voltage Operation S D 3 Shunt GND RF G (0, VHigh) CBL - Chose value for lowest impedance at desired operating frequency. Series RF Series Configuration RF VHigh = +5 to +9 V (VS = VHigh ± 0.2 V). 4 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 3/99A