Alpha AF002C4-39 Gaas ic control fet series dc-2.5 ghz Datasheet

GaAs IC Control FET Series
DC–2.5 GHz
AF002C1-39, AF002C4-39
Features
SOT-23
■ Low Cost SOT-23 Package
0.120 (3.05 mm)
0.110 (2.79 mm)
■ Series or Shunt Configuration
■ Low DC Current Drain
0.018 (0.45 mm)
0.015 (0.38 mm)
3
0.055 (1.40 mm)
0.047 (1.19 mm)
■ Ideal Switch Building Blocks
0.104 (2.64 mm)
0.083 (2.10 mm)
0.024 (0.61 mm)
0.018 (0.45 mm)
■ Pin Diode Replacements
■ High Power Antenna Switches
1
2
0.040 (1.02 mm)
0.037 (0.94 mm)
0.080 (2.03 mm)
0.070 (1.78 mm)
0.007 (0.18 mm)
0.003 (0.08 mm)
Description
This group of GaAs control FETs can be used in both
series and shunt configurations. They incorporate on-chip
circuitry that eliminates the need for extra bias
components and minimizes power drain to typically 25 µW.
These features make the device ideal replacements for
PIN diodes, where low DC drain is critical.
Isolation performance degrades at higher frequencies due
to package parasitics. They can be tuned out in narrow
band applications as shown in the circuit examples on the
following pages.
0.027 (0.69 mm) REF.
0.004 (0.10 mm)
0.0005 (0.01 mm)
0.045
(1.14 mm)
0.035
(0.89 mm)
Electrical Specifications at 25°C (0, -5 V)
Part Number1
Frequency2
(GHz)
AF002C1-39
AF002C4-39
Ω)3
RON (Ω
Typ.
Max.
Insertion Loss (dB)4,5
Series
COFF (pF)6
Shunt
Typ.
Max.
Isolation (db)5
Series
Shunt
P-1 dB (W)
Typ.
DC–0.5 GHz
6.4
9.0
0.50
0.10
0.13
0.25
25
12
0.5
DC–1.0 GHz
6.4
9.0
0.60
0.15
0.13
0.25
17
8
1.0
DC–2.5 GHz
6.4
9.0
0.70
0.20
0.13
0.25
13
3
1.0
DC–0.5 GHz
0.8
1.1
0.20
0.15
1.10
1.50
11
15
6
DC–1.0 GHz
0.8
1.1
0.25
0.25
1.10
1.50
6
9
10
DC–2.5 GHz
0.8
1.1
0.30
2.00
1.10
1.5
3
4
10
Operating Characteristics at 25°C (0, -5 V)
Parameter
Condition
Frequency
Switching Characteristics
Rise, Fall (10/90% or 90/10% RF)
On, Off (50% CTL to 90/10% RF)
Control Voltages
VLow = 0 to -0.2 V @ 20 µA Max.
VHigh = -5 V @ 50 µA to -9 V @ 200 µA Max.
Min.
Typ.
6
12
Max.
Unit
ns
ns
1. All measurements made in a 50 Ω system, unless otherwise specified.
2. DC = 300 kHz.
3. RON - resistance in Ω in low impedance state when “0” V is applied to Gate (G).
4. Insertion loss changes by 0.003 dB/°C.
5. Insertion loss and isolation typical values.
6. COFF - capacitance (pF) in high impedance state when -5 V is applied to Gate (G).
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com
Specifications subject to change without notice. 3/99A
1
GaAs IC Control FET Series DC–2.5 GHz
AF002C1-39, AF002C4-39
Typical Performance Data (0, -5 V)
50
0.8
45
40
0.6
C1
Isolation (dB)
Insertion Loss (dB)
0.7
0.5
0.4
0.3
0.2
30
25
20
15
C1
10
C4
0.1
C4
5
0
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
Frequency (GHz)
Frequency (GHz)
Insertion Loss vs. Frequency
Series Configuration
Isolation vs. Frequency
Series Configuration
0.8
3
30
0.7
25
0.6
Isolation (dB)
Insertion Loss (dB)
35
0.5
0.4
0.3
C4
20
C4
15
10
C1
0.2
5
0.1
C1
0
0
0.5
1
1.5
2
2.5
0
3
0
0.5
1
1.5
2
2.5
Frequency (GHz)
Frequency (GHz)
Insertion Loss vs. Frequency
Shunt Configuration
Isolation vs. Frequency
Shunt Configuration
3
Absolute Maximum Ratings
AF002C1-39
AF002C4-39
Characteristic
Value
RF Input Power
2 W > 500 MHz 0/-8 V
0.5 W @ 50 MHz 0/-8 V
Control Voltage
+0.2 V, -10 V
Operating Temperature
-40°C to +85°C
Storage Temperature
-65°C to +150°C
ΘJC
Characteristic
RF Input Power
Control Voltage
Value
12 W > 450 MHz, 0/-12 V
+0.2, -12 V
Operating Temperature
-40°C to +85°C
Storage Temperature
-65°C to +150°C
ΘJC
25°C/W
25°C/W
Note: Exceeding these parameters may cause irreversible damage.
2
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com
Specifications subject to change without notice. 3/99A
GaAs IC Control FET Series DC–2.5 GHz
AF002C1-39, AF002C4-39
T/R and Antenna Changeover Switch for Mobile Cellular Systems
Mobile
Antenna
Phone
Antenna
Diplexer
LNA
PA
Changeover
Switch
T/R Switch
From Transmitter
To Receiver
Disconnect
T/R Switch
System Block Diagram
T/R Switch Schematic
Changeover Switch Schematic
Antenna
Antenna
LT (nH)
D
λ/4
S
TX
CT
RX
D
S
10 kΩ
GaAs FET
AF002C
Series
G
C (pF)
G
VCTL
D
G
GaAs FET
AF002C
Series
S
VCTL
Truth Table for T/R Switch
To T/R Switch
Truth Table for Changeover Switch
VCTL (V)
TX to Antenna
RX to Antenna
VCTL (V)
Antenna
0
Low Loss
High Isolation
-5
Connected
-5
High Isolation
Low Loss
0
Isolated
See next page for positive voltage operation.
See next page for positive voltage operation.
Component Values for T/R Switch Circuit
Part Number
LT (nH)
CT (pF)
Freq. (GHz)
AF002C1-39
165
18.8
0.45
AF002C4-39
85
18.8
0.45
AF002C1-39
44
4.7
0.90
AF002C4-39
22
4.7
0.90
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com
Specifications subject to change without notice. 3/99A
3
GaAs IC Control FET Series DC–2.5 GHz
Pin Out
AF002C1-39, AF002C4-39
Positive Voltage Operation
DRAIN (D)
SOURCE (S)
VS
RF
2
RF
1
10 kΩ
CT
D
2
1
S
3
GATE (G)
3
Truth Table
Negative Voltage Operation
S
D
G (0, VHigh)
G
Shunt Configuration
RF Path
VS
Shunt
GND
RF
-5
Insertion Loss
0
Isolation
10 kΩ
RF
Series
RF
CBL
CBL
D
RF
0
Insertion Loss
-5
Isolation
G
RF Path
0
Insertion Loss
VHigh
Isolation
0
Isolation
VHigh
Insertion Loss
LT
2
1
RF
S
Positive Voltage Operation
S
D
3
Shunt
GND
RF
G (0, VHigh)
CBL - Chose value for lowest impedance at desired operating frequency.
Series
RF
Series Configuration
RF
VHigh = +5 to +9 V (VS = VHigh ± 0.2 V).
4
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com
Specifications subject to change without notice. 3/99A
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