BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor Rev. 03 — 3 March 2009 Product data sheet 1. Product profile 1.1 General description 20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 50 mA; in a class-AB production test circuit. Mode of operation f (GHz) Pulsed RF VDS PL Gp ηD tr tf (V) (W) (dB) (%) (ns) (ns) 20 15.5 45 20 10 3.1 to 3.5 32 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 50 mA, a tp of 300 µs and a δ of 10 %: u Output power = 20 W u Power gain = 15.5 dB u Efficiency = 45 % n Integrated ESD protection n Excellent ruggedness n High efficiency n Excellent thermal stability n Designed for broadband operation (3.1 GHz to 3.5 GHz) n Internally matched for ease of use n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) BLS6G3135-20; BLS6G3135S-20 NXP Semiconductors LDMOS S-Band radar power transistor 1.3 Applications n S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency range 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLS6G3135-20 (SOT608A) 1 drain 2 gate 3 source 1 1 [1] 2 3 3 2 sym112 BLS6G3135S-20 (SOT608B) 1 drain 2 gate 3 source 1 [1] 1 3 2 3 2 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number BLS6G3135-20 Package Name Description Version - flanged ceramic package; 2 mounting holes; 2 leads SOT608A ceramic earless flanged package; 2 leads SOT608B BLS6G3135S-20 - 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Max Unit VDS drain-source voltage - 60 V VGS gate-source voltage −0.5 +13 V ID drain current - 2.1 A Tstg storage temperature −65 +150 °C Tj junction temperature - 225 °C BLS6G3135-20_6G3135S-20_3 Product data sheet Min © NXP B.V. 2009. All rights reserved. Rev. 03 — 3 March 2009 2 of 12 BLS6G3135-20; BLS6G3135S-20 NXP Semiconductors LDMOS S-Band radar power transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Rth(j-case) thermal resistance from junction to case Tcase = 80 °C; PL = 20 W Typ Max Unit tp = 100 µs; δ = 20 % 0.76 0.92 K/W tp = 300 µs; δ = 10 % 0.79 0.95 K/W 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.5 mA 60 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 40 mA 1.4 2 2.4 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 1.5 µA IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 6 8.2 - A IGSS gate leakage current VGS = 8.3 V; VDS = 0 V - - 150 nA gfs forward transconductance VDS = 10 V; ID = 1.4 A - 2.8 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 1.4 A - 0.37 0.58 Ω 7. Application information Table 7. Application information Mode of operation: pulsed RF; tp = 300 µs; δ = 10 %; RF performance at VDS = 32 V; IDq = 50 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production circuit. Symbol Parameter Conditions Min PL output power VCC - 20 - W supply voltage PL = 20 W - - 32 V Gp power gain PL = 20 W 12 15.5 - dB ηD drain efficiency PL = 20 W 40 45 - % tr rise time PL = 20 W - 20 50 ns tf fall time PL = 20 W - 10 50 ns BLS6G3135-20_6G3135S-20_3 Product data sheet Typ Max Unit © NXP B.V. 2009. All rights reserved. Rev. 03 — 3 March 2009 3 of 12 BLS6G3135-20; BLS6G3135S-20 NXP Semiconductors LDMOS S-Band radar power transistor 7.1 Impedance information Table 8. Typical impedance f ZS ZL (optimized for ηD) ZL (optimized for Gp) Gp(opt) ηD [1] GHz Ω Ω Ω dB % 3.1 31.24 − j31.07 6.99 + j12.9 13.01 + j14.75 18.08 48.34 3.2 50.56 − j12.48 5.82 + j8.77 11.47 + j11.17 17.97 45.60 3.3 43.66 + j17.27 2.32 + j6.17 10.05 + j10.55 17.75 47.01 3.4 24.13 + j28.47 5.52 + j6.10 9.93 + j8.48 17.91 47.03 3.5 10.56 + j22.21 5.79 + j3.19 9.37 + j5.73 17.68 46.54 [1] Measured with ZL optimized for Gp. drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 7.2 Ruggedness in class-AB operation The BLS6G3135-20 and BLS6G3135S-20 are capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS = 32 V; IDq = 50 mA; PL = 20 W; tp = 300 µs; δ = 10 %. BLS6G3135-20_6G3135S-20_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 3 March 2009 4 of 12 BLS6G3135-20; BLS6G3135S-20 NXP Semiconductors LDMOS S-Band radar power transistor 7.3 Graphs 001aaf983 17 Gp (dB) ηD (%) Gp 15 001aaf984 17 50 ηD Gp (dB) (2) 15 40 (3) (1) 13 30 13 11 20 11 9 10 9 7 3 3.2 7 0 3.6 3.4 0 10 20 f (GHz) 30 PL (W) VDS = 32 V; IDq = 50 mA; tp = 300 µs; δ = 10 %; PL = 20 W. VDS = 32 V; IDq = 50 mA; tp = 300 µs; δ = 10 %. (1) f = 3.1 GHz (2) f = 3.3 GHz (3) f = 3.5 GHz Fig 2. Power gain and drain efficiency as functions of frequency; typical values Fig 3. 001aaf985 60 Power gain as a function of load power; typical values 001aaf986 30 (2) (3) ηD (%) (1) PL (W) (1) 50 (2) (3) 20 40 30 10 20 10 0 0 10 20 30 0 PL (W) VDS = 32 V; IDq = 50 mA; tp = 300 µs; δ = 10 %. 1.2 VDS = 32 V; IDq = 50 mA; tp = 300 µs; δ = 10 %. (1) f = 3.1 GHz (2) f = 3.3 GHz (2) f = 3.3 GHz (3) f = 3.5 GHz (3) f = 3.5 GHz Efficiency as a function of load power; typical values Fig 5. Load power as a function of input power; typical values BLS6G3135-20_6G3135S-20_3 Product data sheet 0.8 Pi (W) (1) f = 3.1 GHz Fig 4. 0.4 © NXP B.V. 2009. All rights reserved. Rev. 03 — 3 March 2009 5 of 12 BLS6G3135-20; BLS6G3135S-20 NXP Semiconductors LDMOS S-Band radar power transistor 001aaf987 17 Gp (dB) ηD (%) Gp 15 (2) Gp (dB) (3) 40 14 13 30 12 11 20 10 9 10 8 7 3 3.2 (1) 6 0 3.6 3.4 001aaf988 16 50 ηD 0 10 20 f (GHz) 30 PL (W) VDS = 32 V; IDq = 100 mA; tp = 50 µs; δ = 20 %; PL = 20 W. VDS = 32 V; IDq = 50 mA; tp = 100 µs; δ = 20 %. (1) f = 3.1 GHz (2) f = 3.3 GHz (3) f = 3.5 GHz Fig 6. Power gain and drain efficiency as functions of frequency; typical values Fig 7. 001aaf989 60 ηD (%) Power gain as a function of load power; typical values 001aaf990 30 (2) (3) (1) PL (W) (1) 50 (2) (3) 20 40 30 10 20 10 0 0 10 20 30 0 PL (W) 1.2 VDS = 32 V; IDq = 50 mA; tp = 100 µs; δ = 20 %. (1) f = 3.1 GHz (1) f = 3.1 GHz (2) f = 3.3 GHz (2) f = 3.3 GHz (3) f = 3.5 GHz (3) f = 3.5 GHz Efficiency as a function of load power; typical values Fig 9. Load power as a function of input power; typical values BLS6G3135-20_6G3135S-20_3 Product data sheet 0.8 Pi (W) VDS = 32 V; IDq = 50 mA; tp = 100 µs; δ = 20 %. Fig 8. 0.4 © NXP B.V. 2009. All rights reserved. Rev. 03 — 3 March 2009 6 of 12 BLS6G3135-20; BLS6G3135S-20 NXP Semiconductors LDMOS S-Band radar power transistor 8. Test information C5 C3 C4 C10 C13 C11 C9 C12 VDD C8 C7 VGG L1 C6 R1 λ / 4-line λ / 4-line C1 C2 001aah590 Striplines are on a double copper-clad Rogers Duroid 6006 Printed-Circuit Board (PCB) with εr = 6.2 and thickness = 0.64 mm. See Table 9 for list of components. Fig 10. Component layout for 3.1 GHz to 3.5 GHz test circuit Table 9. List of components See Figure 10. Component Description Value Remarks C1, C2, C5, C6, C7, C8, C9 multilayer ceramic chip capacitor 33 pF [1] C3, C4, C10, C11 multilayer ceramic chip capacitor 470 pF [2] C12 electrolytic capacitor 47 µF; 63 V C13 electrolytic capacitor 10 µF; 35 V L1 copper wire - R1 resistor 49.9 Ω [1] American Technical Ceramics type 100A or capacitor of same quality. [2] American Technical Ceramics type 100B or capacitor of same quality. BLS6G3135-20_6G3135S-20_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 3 March 2009 7 of 12 BLS6G3135-20; BLS6G3135S-20 NXP Semiconductors LDMOS S-Band radar power transistor 9. Package outline Flanged ceramic package; 2 mounting holes; 2 leads SOT608A D A F 3 D1 U1 B q c C 1 H E1 p U2 E w1 M A M B M 2 A w2 M C M b Q 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.62 3.76 7.24 6.99 0.15 0.10 10.21 10.29 10.01 10.03 inches 0.182 0.148 0.285 0.006 0.275 0.004 0.402 0.405 0.394 0.395 OUTLINE VERSION D D1 F H p Q q U1 U2 w1 w2 10.21 10.29 10.01 10.03 1.14 0.89 15.75 14.73 3.30 2.92 1.70 1.35 15.24 20.45 20.19 9.91 9.65 0.25 0.51 0.402 0.405 0.394 0.395 0.045 0.620 0.035 0.580 0.130 0.115 0.067 0.600 0.053 0.805 0.795 0.390 0.010 0.020 0.380 E E1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 01-02-22 02-02-11 SOT608A Fig 11. Package outline SOT608A BLS6G3135-20_6G3135S-20_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 3 March 2009 8 of 12 BLS6G3135-20; BLS6G3135S-20 NXP Semiconductors LDMOS S-Band radar power transistor Ceramic earless flanged package; 2 leads SOT608B D A F 3 D1 A U1 c 1 U2 H E E1 2 w1 b M A Q M 0 5 mm scale DIMENSIONS (mm dimensions are derived from the original inch dimensions) UNIT A b c mm 4.62 3.76 7.24 6.99 0.15 0.10 inch 0.182 0.285 0.006 0.402 0.405 0.402 0.405 0.045 0.620 0.067 0.403 0.403 0.020 0.148 0.275 0.004 0.394 0.395 0.394 0.395 0.035 0.580 0.053 0.393 0.393 OUTLINE VERSION D D1 E E1 10.21 10.29 10.21 10.29 10.01 10.03 10.01 10.03 F H Q 1.14 0.89 15.75 14.73 1.70 1.35 U1 10.24 10.24 9.98 9.98 REFERENCES IEC JEDEC U2 JEITA w1 0.51 EUROPEAN PROJECTION ISSUE DATE 06-11-27 06-12-06 SOT608B Fig 12. Package outline SOT608B BLS6G3135-20_6G3135S-20_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 3 March 2009 9 of 12 BLS6G3135-20; BLS6G3135S-20 NXP Semiconductors LDMOS S-Band radar power transistor 10. Abbreviations Table 10. Abbreviations Acronym Description LDMOS Laterally Diffused Metal Oxide Semiconductor RF Radio Frequency S-Band Short wave Band VSWR Voltage Standing-Wave Ratio 11. Revision history Table 11. Revision history Document ID Release date Data sheet status BLS6G3135-20_6G3135S-20_3 20090303 Modifications: • Product data sheet Change notice Supersedes - Section 7.1 on page 4: Impedance information added BLS6G3135-20_6G3135S-20_2 20081217 Product data sheet BLS6G3135-20_6G3135S-20_1 20070307 Objective data sheet - - BLS6G3135-20_6G3135S-20_3 Product data sheet BLS6G3135-20_6G3135S-20_2 BLS6G3135-20_6G3135S-20_1 - © NXP B.V. 2009. All rights reserved. Rev. 03 — 3 March 2009 10 of 12 NXP Semiconductors BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLS6G3135-20_6G3135S-20_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 3 March 2009 11 of 12 NXP Semiconductors BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Impedance information . . . . . . . . . . . . . . . . . . . 4 Ruggedness in class-AB operation. . . . . . . . . . 4 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 3 March 2009 Document identifier: BLS6G3135-20_6G3135S-20_3