LINER LT3782AIUFD 2-phase step-up dc/dc controller Datasheet

LT3782A
2-Phase Step-Up
DC/DC Controller
DESCRIPTION
FEATURES
n
n
n
n
n
n
n
n
n
n
n
The LT®3782A is a current mode 2-phase step-up DC/DC
converter controller. Its high switching frequency (up to
500kHz) and 2-phase operation reduce system filtering
capacitance and inductance requirements.
2-Phase Operation Reduces Required Input and
Output Capacitance
Programmable Switching Frequency:
150kHz to 500kHz
6V to 40V Input Range
10V Gate Drive with VCC ≥13V
High Current Gate Drive (4A)
Programmable Soft-Start and Current Limit
Programmable Slope Compensation for
High Noise Immunity
MOSFET Gate Signals with Programmable
Falling Edge Delay for External Synchronous
Drivers
Programmable Undervoltage Lockout
Programmable Duty Cycle Clamp (50% or Higher)
Thermally Enhanced 28-Lead TSSOP and 4mm × 5mm
QFN Packages
With 10V gate drive (VCC ≥13V) and 4A peak drive current,
the LT3782A can drive most industrial grade high power
MOSFETs with high efficiency. For synchronous applications, the LT3782A provides synchronous gate signals
with programmable falling edge delay to avoid cross
conduction when using external MOSFET drivers. Other
features include programmable undervoltage lockout,
soft-start, current limit, duty cycle clamp (50% or higher)
and slope compensation. The LT3782A is identical to the
LT3782 except that the LT3782A has a tighter current sense
mismatch tolerance.
The LT3782A is available in thermally enhanced 28-lead
TSSOP and 4mm × 5mm QFN packages.
APPLICATIONS
n
n
n
, LT, LTC and LTM are registered trademarks of Linear Technology Corporation.
All other trademarks are the property of their respective owners.
Protected by U.S. Patents, including 6144194.
Industrial Equipment
Telecom Infrastructure
Interleaved Isolated Power Supply
TYPICAL APPLICATION
50V 4A Boost Converter
20μH
VIN
10V TO 36V
VCC
1μF
825k
10μF
×2
GBIAS1
20μH
GBIAS2
2μF
VOUT
50V, 4A
Efficiency and Power Loss
vs Load Current
+
D2
GBIAS
RUN
10μF
×2
D1
18
97
220μF
VIN = 24V
EFFICIENCY
BGATE1
15
95
274k
0.004Ω
VEE1
59k
SLOPE
BGATE2
DELAY
80k
DCL
RSET
SS
0.1μF
VC
13k
100pF
6.8nF
12
93
VIN = 12V
91
9
VIN = 24V
89
6
POWER LOSS (W)
LT3782A
EFFICIENCY (%)
VIN = 12V
POWER LOSS
0.004Ω
3
87
VEE2
10Ω
10Ω
85
SENSE1+
SENSE1–
10nF
10nF
0
1
2
3
IOUT (A)
4
5
0
3782A TA01b
475k
SENSE2+
SENSE2–
FB
GND
3782A TA01
24.9k
3782af
1
LT3782A
ABSOLUTE MAXIMUM RATINGS
(Note 1)
VCC Supply Voltage ...................................................40V
GBIAS, GBIAS1, GBIAS2 Pin
(Externally Forced) ....................................................14V
SYNC, RUN Pin .........................................................30V
Operating Junction Temperature
Range (Notes 2, 3) ................................. –40°C to 125°C
SS ........................................................... 300μA Max ISS
SENSE1+, SENSE2+,
SENSE1–, SENSE2– ..................................... –0.3V to 2V
Storage Temperature Range...................– 65°C to 150°C
Lead Temperature (Soldering, 10 sec)
For FE Package...................................................... 300°C
PIN CONFIGURATION
TOP VIEW
26 NC
GND
4
25 NC
SYNC
5
24 VEE1
DELAY
6
23 BGATE1
DCL 3
DCL
7
22 GBIAS1
SENSE1+ 4
SENSE1+
8
21 GBIAS2
SENSE1– 5
SENSE2
12
20 BGATE2
15 VC
15 NC
9 10 11 12 13 14
17 RUN
16 FB
16 VEE2
SENSE2– 8
18 NC
SS 14
17 BGATE2
RSET 7
19 VEE2
SENSE2+ 13
18 GBIAS2
SLOPE 6
FE PACKAGE
28-LEAD PLASTIC TSSOP
TJMAX = 125°C, θJA = 25°C/ W
EXPOSED PAD (PIN 29) IS GND, MUST BE SOLDERED TO PCB
RUN
–
19 NC
29
FB
RSET 11
20 NC
VC
SLOPE 10
21 GBIAS1
SS
9
22 BGATE1
DELAY 2
NC
SENSE1
28 27 26 25 24 23
SYNC 1
SENSE2+
–
29
VEE1
27 VCC
3
VCC
2
NC
GBIAS
SGATE1
SGATE2
28 GBIAS
GND
1
SGATE1
TOP VIEW
SGATE2
UFD PACKAGE
28-LEAD (4mm × 5mm) PLASTIC QFN
TJMAX = 125°C, θJA = 37°C/ W
EXPOSED PAD (PIN 29) IS GND, MUST BE SOLDERED TO PCB
ORDER INFORMATION
LEAD FREE FINISH
TAPE AND REEL
PART MARKING*
PACKAGE DESCRIPTION
TEMPERATURE RANGE
LT3782AEFE#PBF
LT3782AEFE#TRPBF
LT3782AFE
28-Lead Plastic TSSOP
–40°C to 85°C
LT3782AIFE#PBF
LT3782AIFE#TRPBF
LT3782AFE
28-Lead Plastic TSSOP
–40°C to 125°C
LT3782AEUFD#PBF
LT3782AEUFD#TRPBF
3782A
28-Lead (4mm × 5mm) Plastic QFN
–40°C to 85°C
LT3782AIUFD#PBF
LT3782AIUFD#TRPBF
3782A
28-Lead (4mm × 5mm) Plastic QFN
–40°C to 125°C
LEAD BASED FINISH
TAPE AND REEL
PART MARKING*
PACKAGE DESCRIPTION
TEMPERATURE RANGE
LT3782AEFE
LT3782AEFE#TR
LT3782AFE
28-Lead Plastic SSOP
–40°C to 85°C
LT3782AIFE
LT3782AIFE#TR
LT3782AFE
28-Lead Plastic SSOP
–40°C to 125°C
LT3782AEUFD
LT3782AEUFD#TR
3782A
28-Lead (4mm × 5mm) Plastic QFN
–40°C to 85°C
LT3782AIUFD
LT3782AIUFD#TR
3782A
28-Lead (4mm × 5mm) Plastic QFN
–40°C to 125°C
Consult LTC Marketing for parts specified with wider operating temperature ranges. *The temperature grade is identified by a label on the shipping container.
For more information on lead free part marking, go to: http://www.linear.com/leadfree/
For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/
3782af
2
LT3782A
ELECTRICAL CHARACTERISTICS
The ● denotes the specifications which apply over the full operating junction
temperature range, otherwise specifications are at TA = 25°C. VCC = 13V, RSET = 80k, no load on any outputs, unless otherwise noted.
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Overall
l
Supply Voltage (VCC)
Supply Current (IVCC)
6
VC ≤ 0.5V (Switching Off), VCC ≤ 40V
40
V
11
16
mA
2.45
2.6
Shutdown
l
RUN Threshold
2.3
RUN Threshold Hysteresis
80
Supply Current in Shutdown
1V ≤ RUN ≤ VREF, VCC ≤ 30V
RUN ≤ 0.3V, VCC ≤ 30V
RUN Pin Input Current
VRUN = 2.3V
l
V
mV
0.4
40
0.65
90
mA
μA
–0.5
–2
μA
V
V
Voltage Amplifier gm
Reference Voltage (VREF)
l
2.42
2.4
2.44
2.464
2.488
200
260
370
μmho
0.2
0.6
μA
Transconductance
VVC = 1V, ΔIVC = ±2μA
l
Input Current IFB
VFB = VREF
l
VC High
IVC = 0
1.5
V
VC Low
IVC = 0
0.35
0.4
V
Source Current IVC
VVC = 0.7V – 1V, VFB = VREF – 100mV
8
11
14
μA
Sink Current IVC
VVC = 0.7V – 1V, VFB = VREF + 100mV
13
20
28
μA
l
VC Threshold for Switching Off (BGATE1, BGATE2 Low)
Soft-Start Current ISS
VSS = 0.1V – 2.8V
0.3
6
V
10
15
μA
70
mV
10
mV
Current Amplifier CA1, CA2
Voltage Gain ΔVC /ΔVSENSE
4
Current Limit (VSENSE1+ – VSENSE1–) (VSENSE2+ – VSENSE2–)
VFB = 2.3V
55
Current Limit Mismatch
(ΔVSENSE1 – ΔVSENSE2), VFB = 2.3V
–10
Input Current (ISENSE1+, ISENSE1–, ISENSE2+, ISENSE2–)
ΔVSENSE = 0V
63
60
μA
Oscillator
Switching Frequency
RSET = 130k
RSET = 80k
RSET = 40k
Synchronization Pulse Threshold on SYNC Pin
l
l
l
130
212
386
154
250
465
177
288
533
Rising Edge VSYNC
0.8
1.2
2
Synchronization Frequency Range
(Note: Operation Switching Frequency Equals
Half of the Synchronization Frequency)
RSET = 130k
RSET = 80k
RSET = 40k
180
290
550
VRSET
RSET = 80k
Maximum Duty Cycle
VFB = VREF – 25mV, RSET > 80k
RSET = 40k
Duty Cycle Limit
RSET = 80k, VDCL ≤ 0.3V
VDCL = 1.2V
VDCL = VRSET
DCL Pin Input Current
VDCL ≤ 0.3V
l
l
l
90
83
240
392
715
kHz
kHz
kHz
V
kHz
kHz
kHz
2.3
V
94
90
%
%
50
75
Max Duty Cycle
%
%
–0.1
–0.3
μA
3782af
3
LT3782A
ELECTRICAL CHARACTERISTICS
The ● denotes the specifications which apply over the full operating junction
temperature range, otherwise specifications are at TA = 25°C. VCC = 13V, RSET = 80k, no load on any outputs, unless otherwise noted.
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Gate Driver
VGBIAS
IGBIAS < 70mA
l
10.2
11
11.7
V
BGATE1, BGATE2 High Voltage
13V ≤ VCC ≤ 24V, IBGATE = –100mA
VCC = 8V, IBGATE = –100mA
l
l
7.8
3.8
9.2
5
10.5
V
V
BGATE1, BGATE2 Source Current (Peak)
Capacitive Load >22μF
Capacitive Load >50μF
BGATE1, BGATE2 Low Voltage
8V ≤ VCC ≤ 24V, IBGATE = 100mA
BGATE1, BGATE2 Sink Current (Peak)
Capacitive Load >22μF
Capacitive Load >50μF
SGATE1, SGATE2 High Voltage
8V ≤ VCC ≤ 24V, ISGATE = –20mA
SGATE1, SGATE2 Low Voltage
8V ≤ VCC ≤ 24V, ISGATE = 20mA
3
4
l
A
A
0.5
0.7
V
3
4
l
4.5
A
A
5.5
6.7
V
0.5
0.7
V
SGATE1, SGATE2 Peak Current
500pF Load
100
mA
Delay of BGATE High
DELAY Pin and RSET Pin Shorted
VDELAY = 1V
VDELAY = 0.5V
VDELAY = 0.25V
100
150
250
500
ns
ns
ns
ns
Delay Pin Input Current
VDELAY = 0.25V
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LT3782AE is guaranteed to meet performance specifications
from 0°C to 85°C. Specifications over the –40°C to 125°C operating
junction temperature range are assured by design, characterization and
correlation with statistical process controls. The LT3782AI is guaranteed
l
10.8
16
10.7
14
10.6
12
10.5
10.4
10
8
10.3
6
10.2
4
10.1
2
0
50
100
IGBIAS (mA)
3782A G01
0
3
12
2
10
1
ΔVREF (mV)
18
ICC (mA)
VGBIAS (V)
10.9
10.0
ΔVREF vs VCC, ΔFrequency vs VCC
(RSET = 80k)
8
ΔVREF
0
6
–1
4
–2
2
ΔFREQUENCY
–3
0
–4
–2
–5
6
8 10 12 14 16 18 20 22 24 26 28 30
VCC (V)
3782A G02
ΔFREQUENCY (kHz)
20
μA
TA = 25°C unless otherwise noted.
ICC vs VCC
11.0
–0.3
to meet performance specifications over the full –40°C to 125°C operating
junction temperature range.
Note 3: This IC includes overtemperature protection that is intended
to protect the device during momentary overload conditions. Junction
temperature will exceed 125°C when overtemperature protection is active.
Continuous operation above the specified maximum operating junction
temperature may impair device reliability.
TYPICAL PERFORMANCE CHARACTERISTICS
VGBIAS vs IGBIAS
–0.1
–4
6
9
12
15
18
21
24
27
30
VCC (V)
3782A G03
3782af
4
LT3782A
TYPICAL PERFORMANCE CHARACTERISTICS
600
2.446
CURRENT LIMIT THRESHOLD (mV)
70
2.444
REFERENCE VOLTAGE (V)
500
400
300
200
2.442
2.440
2.438
2.436
25
75
100
125
50
JUNCTION TEMPERATURE (°C)
0
3782A G04
64
61
58
150
–20
30
55
5
80
TEMPERATURE (°C)
105
130
3782A G10
3782A G05
SGATE (Low) to BGATE (High)
Delay vs VDELAY (RSET = 80k)
VGBIAS vs IGBIAS at Start-Up
(Charging 2μF)
14
1000
800
12
67
55
–45
2.434
20 40 60 80 100 120 140 160 180 200
RFREQ (kΩ)
900
700
VGBIAS
800
600
8
500
6
400
4
300
700
DELAY (ns)
10
IGBIAS (mA)
VGBIAS (V)
IGBIAS
200
0
100
–2
0
250μ
500μ
TIME (s)
750μ
600
500
400
300
2
200
100
0
0
1m
0.5
0
1.5
1.0
VDELAY (V)
2.0
2.5
3782A G07
3782A G06
Switching Frequency
vs Duty Cycle
Maximum Duty Cycle Limit
vs VDCL (RSET = 80k)
105
120
110
100
MAXIMUM DUTY CYCLE (%)
0
DUTY CYCLE (%)
FREQUENCY (kHz)
Current Limit Threshold
vs Temperature
Reference Voltage
vs Temperature
Switching Frequency vs RFREQ
100
TA = 25°C, unless otherwise noted.
95
90
85
100
90
80
70
60
50
80
100
40
200
400
500
300
SWITCHING FREQUENCY (kHz)
600
3782A G08
0
0.3
0.6
0.9
1.2 1.5
VDCL (V)
1.8
2.1
2.4
3782A G09
3782af
5
LT3782A
PIN FUNCTIONS
(FE/UFD)
SGATE2 (Pin 1/Pin 26): Second Phase Synchronous Drive
Signal. An external driver buffer is needed to drive the top
synchronous power FET.
SGATE1 (Pin 2/Pin 27): First Phase Synchronous Drive
Signal. An external driver buffer is needed to drive the top
synchronous power FET.
GND (Pin 4/Pin 28): Ground.
SYNC (Pin 5/Pin 1): Synchronization Input. The pulse
width can range from 10% to 70%. Note that the operating
frequency is half of the sync frequency.
DELAY (Pin 6/Pin 2): When synchronous drivers are used,
the programmable delay that delays BGATE turns on after
SGATE turns off.
DCL (Pin 7/Pin 3): This pin programs the limit of the maximum duty cycle. When connected to VRSET, it operates at
natural maximum duty cycle, approximately 90%.
SENSE1+ (Pin 8/Pin 4): First Phase Current Sense Amplifier
Positive Input. An RC filter is required across the current
sense resistor. Current limit threshold is set at 63mV.
SENSE1– (Pin 9/Pin 5): First Phase Current Sense Amplifier
Negative Input. An RC filter is required across the current
sense resistor.
SLOPE (Pin 10/Pin 6): A resistor from SLOPE to GND
increases the internal current mode PWM slope compensation.
RSET (Pin 11/Pin 7): A resistor from RSET to GND sets the
oscillator charging current and the operating frequency.
SENSE2– (Pin 12/Pin 8): Second Phase Current Sense
Amplifier Negative Input. An RC filter is required across
the current sense resistor.
SENSE2+ (Pin 13/Pin 10): Second Phase Current Sense
Amplifier Positive Input. An RC filter is required across
the current sense resistor. Current limit threshold is set
at 63mV.
SS (Pin 14/Pin 11): Soft-Start. A capacitor on this pin sets
the output ramp up rate. The typical time for SS to reach
the programmed level is (C • 2.44V)/10μA.
VC (Pin 15/Pin 12): The output of the gm error amplifier and
the control signal of the current loop of the current-mode
PWM. Switching starts at 0.7V, and higher VC voltages
corresponds to higher inductor current.
FB (Pin 16/Pin 13): Error Amplifier Inverting Input. A
resistor divider to this pin sets the output voltage.
RUN (Pin 17/Pin 14): LT3782A goes into shutdown mode
when VRUN is below 2.2V and goes to low bias current
shutdown mode when VRUN is below 0.3V.
VEE2 (Pin 19/Pin 16): Gate Driver BGATE2 Ground. This
pin should be connected to ground as close to the IC as
possible.
BGATE2 (Pin 20/Pin 17): Second Phase MOSFET Driver.
GBIAS2 (Pin 21/Pin 18): Bias for Gate Driver BGATE2.
Should be connected to GBIAS or an external power supply
between 12V to 14V. A bypass low ESR capacitor of 2μF
or larger is needed and should be connected directly to
the pin to minimize parasitic impedance.
GBIAS1 (Pin 22/Pin 21): Bias for Gate Driver BGATE1.
Should be connected to GBIAS2.
BGATE1 (Pin 23/Pin 22): First Phase MOSFET Driver.
VEE1 (Pin 24/Pin 23): Gate Driver BGATE1 Ground. This
pin should be connected to ground as close to the IC as
possible.
VCC (Pin 27/Pin 24): Chip Power Supply. Good supply
bypassing is required.
GBIAS (Pin 28/Pin 25): Internal 11V regulator output for
biasing internal circuitry. Should be connected to GBIAS1
and GBIAS2.
Exposed Pad (Pin 29/Pin 29): The exposed package pad
is fused to internal ground and is for heat sinking. Solder
the bottom metal plate onto expanded ground plane for
optimum thermal performance. This pad should be connected to ground as close to the IC as possible.
NC (Pins 3, 18, 25, 26/Pins 9, 15, 19, 20): Not Connected.
Can be connected to GND.
3782af
6
LT3782A
BLOCK DIAGRAM
VIN
VCC
CIN
20μF
27
REGULATOR
GBIAS1
+
+
LOW POWER
SHUTDOWN
R6
+
A5
RUN
17
R8
A11
–
+
VOUT
L1
15μH
VGBIAS = VCC – 1V AND CLAMPED AT 11V
A6
D2
+
COUT
100μF
C3
2μF
21
– +
7V
0.5V
L2
15μH
GBIAS2
A8
–
+
22
D1
GBIAS
28
VCC – 2.5V
RF1
+
RF2
A7
–
+
A20
2.44V
SGATE1
A4
2
A1
DELAY
+
+
6
ONE SHOT
RSET
A12
2.5V
BGATE1
GBIAS1
–
BGATE1
A13
A14
R1
50k
SLOPE COMP
CH1
SENSE1+
R7
10Ω
RS1
8
+
PWM1
M1
23
A9
BLANKING
SENSE1–
R3
C2
2nF
9
–
VEE1
24
A3
+
BGATE1
SGATE1
CL1
– +
DELAY
60mV
SGATE2
SET
A15
1
A17
+
+
A16
2.5V
DELAY
–
BGATE2
ONE SHOT
GBIAS2
BGATE2
A18
A19
R2
50k
SLOPE COMP
CH2
SET
SLOPE
SLOPE
COMP
10
CH1
CH2
S
S
R
PWM2
SYNC
BLANKING
SENSE2–
R4
R9
10Ω
RS2
C4
2nF
12
–
5
SENSE2+
13
+
R
M2
20
A2
VEE2
19
A10
RSET
11
OSC
RFREQ
C5
20pF
+
CK
D
D6
Q
Q
+
LOGIC
CL2
–
DCL
D7
+
60mV
7
16
GM
GND
4
FB
–
VC
VREF
I1
10μA
D4
SS
15
R5
2k
3782A BD
NOTE:
PACKAGE BOTTOM METAL PLATE (PIN 29)
IS FUSED TO CHIP DIE AGND
4V
14
C7
10nF
C1
2000pF
3782af
7
LT3782A
APPLICATIONS INFORMATION
Operation
Soft-Start and Shutdown
The LT3782A is a two phase constant frequency current
mode boost controller. Switching frequency can be programmed up to 500kHz. During normal switching cycles,
the two channels are controlled by internal flip-flops and
are 180 degrees out-of-phase.
During soft-start, the voltage on the SS pin (VSS) controls
the output voltage. The output voltage thus ramps up following VSS. The effective range of VSS is from 0V to 2.44V.
The typical time for the output to reach the programmed
level is
Referring to the Block Diagram, the LT3782A’s basic functions include a transconductance amplifier (gm) to regulate
the output voltage and to control the current mode PWM
current loop. It also includes the necessary logic and flipflop to control the PWM switching cycles, two high speed
gate drivers to drive high power N-channel MOSFETs, and
2-phase control signals to drive external gate drivers for
optional synchronous operation.
In normal operation, each switching cycle starts with a
switch turn-on. The inductor current of each channel is
sampled through the current sense resistor and amplified
then compared to the error amplifier output VC to turn
the switch off. The phase delay of the second channel is
controlled by the divide-by-two D flip-flop and is exactly
180 degrees out-of-phase of the first channel. With a resistor divider connected to the FB pin, the output voltage
is programmed to the desired value. The 10V gate drivers
are sufficient to drive most high power N-channel MOSFET
in many industrial applications.
Additional important features include shutdown, current limit, soft-start, synchronization and programmable
maximum duty cycle. Additional slope compensation can
be added also.
Output Voltage Programming
With a 2.44V feedback reference voltage VREF, the output
VOUT is programmed by a resistor divider as shown in
the Block Diagram.
R VOUT = 2.44 1+ F1 RF2 t=
C • 2.44V
10μA
C is the capacitor connected from the SS pin to GND.
Undervoltage Lockout and Shutdown
Only when VRUN is higher than 2.45V VGBIAS will be active
and the switching enabled. The LT3782A goes into low
current shutdown when VRUN is below 0.3V. A resistor
divider can be used on RUN pin to set the desired VCC
undervoltage lockout voltage. 80mV of hysteresis is built
in on RUN pin thresholds.
Oscillation Frequency Setting and Synchronization
The switching frequency of LT3782A can be set up to
500kHz by a resistor RFREQ from pin RSET to ground.
For fSET = 250kHz, RFREQ = 80k
Once the switching frequency fSET is chosen, RFREQ can be
found from the Switching Frequency vs RFREQ graph found
under the Typical Performance Characteristics section.
Note that because of the 2-phase operation, the internal
oscillator is running at twice the switching frequency. To
synchronize the LT3782A to the system frequency fSYSTEM,
the synchronizing frequency fSYNC should be two times
fSYSTEM, and the LT3782A switching frequency fSET should
be set below 80% of fSYSTEM.
fSYNC = 2fSYSTEM and fSET < (fSYSTEM • 0.8)
For example, to synchronize the LT3782A to 200kHz system frequency fSYSTEM, fSYNC needs to be set at 400kHz
and fSET needs to be set at 160kHz. From the Switching
Frequency vs RFREQ graph found under the Typical Performance Characteristics section, RFREQ = 130k.
3782af
8
LT3782A
APPLICATIONS INFORMATION
With a 200ns one-shot timer on chip, the LT3782A provides
flexibility on the external sync pulse width. The sync pulse
threshold is about 1.2V (Figure 1). This pin can be floated
when the sync function is not used.
Synchronous Rectifier Switches
For high output voltage applications, the power loss of the
catch diodes are relatively small because of high duty cycle.
If diodes power loss or heat is a concern, the LT3782A
provides PWM signals through SGATE1 and SGATE2 pins
to drive external MOSFET drivers for synchronous rectifier operation. Note that SGATE drives the top switch and
BGATE drives the bottom switch. To avoid cross conduction
between top and bottom switches, the BGATE turn-on is
delayed 100ns (when DELAY pin is tied to RSET pin) from
SGATE turn-off (see Figure 2). If a longer delay is needed
to compensate for the propagation delay of external gate
driver, a resistor divider can be used from RSET to ground to
program VDELAY for the longer delay needed. For example,
for a switching frequency of 250kHz and delay of 150ns,
Current Limit
Current limit is set by the 63mV threshold across SEN1P,
SEN1N for channel one and SEN2P, SEN2N for channel
two. By connecting an external resistor RS (see Block
Diagram), the current limit is set for 63mV/RS. RS should
be placed very close to the power switch with very short
traces. A low pass RC filter is needed across RS to filter out
the switching spikes. Good Kelvin sensing is required for
accurate current limit. The input bypass capacitor ground
should be at the same ground point of the current sense
resistor to minimize the ground current path.
5V TO 20V
5k
LT3782A
SYNC
VN2222
PULSE WIDTH > 200ns
3782A F01
Figure 1. Synchronizing with External Clock
BGATE1
SGATE1
DELAY
SET
3782A F02
Figure 2. Delay Timing
3782af
9
LT3782A
APPLICATIONS INFORMATION
then RFREQ1 + RFREQ2 should be 80k and VDELAY should
be 1V, with VRSET = 2.3V then RFREQ1 = 47.5k and RFREQ2
= 32.5k (see Figure 3).
Duty Cycle Limit
When DCL pin is shorted to RSET pin and switching frequency is less than 250kHz (RFREQ > 80k), the maximum
duty cycle of LT3782A will be at least 90%. The maximum
duty cycle can be clamped to 50% by grounding the DCL
pin or to 75% by forcing the VDCL voltage to 1.2V with a
resistor divider from RSET pin to ground. The typical DCL
pin input current is 0.2μA.
Layout Considerations
To prevent EMI, the power MOSFETs and input bypass
capacitor leads should be kept as short as possible. A
ground plane should be used under the switching circuitry
to prevent interplane coupling and to act as a thermal
spreading path. Note that the bottom pad of the package
is the heat sink, as well as the IC signal ground, and must
be soldered to the ground plane.
In a boost converter, the conversion gain (assuming 100%
efficiency) is calculated as (ignoring the forward voltage
drop of the boost diode):
VOUT
1
=
VIN 1−D
Slope Compensation
The LT3782A is designed for high voltage and/or high
current applications, and very often these applications
generate noise spikes that can be picked up by the current sensing amplifier and cause switching jitter. To avoid
switching jitter, careful layout is absolutely necessary to
minimize the current sensing noise pickup. Sometimes
increasing slope compensation to overcome the noise
can help to reduce jitter. The built-in slope compensation can be increased by adding a resistor RSLOPE from
SLOPE pin to ground. Note that smaller RSLOPE increases
slope compensation and the minimum RSLOPE allowed is
RFREQ/2.
where D is the duty ratio of the main switch. D can then
be estimated from the input and output voltages:
D=1−
V
VIN
; DMAX =1− IN(MIN)
VOUT
VOUT
DELAY
LT3782A
RSET
RFREQ1
47.5k
3782A F03
RFREQ2
32.5k
Figure 3. Increase Delay Time
3782af
10
LT3782A
APPLICATIONS INFORMATION
The Peak and Average Input Currents
And the inductance is estimated to be:
The control circuit in the LT3782A measures the input current by using a sense resistor in each MOSFET source, so
the output current needs to be reflected back to the input
in order to dimension the power MOSFET properly. Based
on the fact that, ideally, the output power is equal to the
input power, the maximum average input current is:
I
IIN(MAX) = O(MAX)
1– DMAX
The peak current is:
I
IIN(PEAK) =1.2 • O(MAX)
1– DMAX
Power Inductor Selection
In a boost circuit, a power inductor should be designed
to carry the maximum input DC current. The inductance
should be small enough to generate enough ripple current
to provide adequate signal to noise ratio to the LT3782A.
An empirical starting of the inductor ripple current (per
phase) is about 40% of maximum DC current, which is
half of the input DC current in a 2-phase circuit:
IOUT(MAX) • VOUT
2VIN
VIN • D
fs • ΔIL
where fs is the switching frequency per phase.
The saturation current level of inductor is estimated to
be:
ISAT ≥
•V
I
ΔIL IIN
+ ≅ 70% • OUT(MAX) OUT
2
2
VIN(MIN)
Sense Resistor Selection
The maximum duty cycle, DMAX, should be calculated at
minimum VIN.
ΔIL ≅ 40% •
L=
= 20% •
IOUT(MAX) • VOUT
VIN
where VIN, VOUT and IOUT are the DC input voltage, output
voltage and output current, respectively.
During the switch on-time, the control circuit limits the
maximum voltage drop across the sense resistor to about
63mV. The peak inductor current is therefore limited to
63mV/R. The relationship between the maximum load
current, duty cycle and the sense resistor RSENSE is:
R ≤ VSENSE(MAX) •
1– DMAX
I
1.2 • O(MAX)
2
Power MOSFET Selection
Important parameters for the power MOSFET include the
drain-to-source breakdown voltage (BVDSS), the threshold
voltage (VGS(TH)), the on-resistance (RDS(ON)) versus gateto-source voltage, the gate-to-source and gate-to-drain
charges (QGS and QGD, respectively), the maximum drain
current (ID(MAX)) and the MOSFET’s thermal resistances
(RTH(JC) and RTH(JA)).
3782af
11
LT3782A
APPLICATIONS INFORMATION
The gate drive voltage is set by the 10V GBIAS regulator.
Consequently, 10V rated MOSFETs are required in most
high voltage LT3782A applications.
voltage and temperature), and for the worst-case specifications for VSENSE(MAX) and the RDS(ON) of the MOSFET
listed in the manufacturer’s data sheet.
Pay close attention to the BVDSS specifications for the
MOSFETs relative to the maximum actual switch voltage
in the application. The switch node can ring during the
turn-off of the MOSFET due to layout parasitics. Check the
switching waveforms of the MOSFET directly across the
drain and source terminals using the actual PC board layout
(not just on a lab breadboard!) for excessive ringing.
The power dissipated by the MOSFET in a 2-phase boost
converter is:
IO(MAX) 2
2 PFET =
• RDS(ON) • D • T
(1– D)
Calculating Power MOSFET Switching and Conduction
Losses and Junction Temperatures
In order to calculate the junction temperature of the power
MOSFET, the power dissipated by the device must be known.
This power dissipation is a function of the duty cycle, the
load current and the junction temperature itself (due to
the positive temperature coefficient of its RDS(ON)). As a
result, some iterative calculation is normally required to
determine a reasonably accurate value. Care should be
taken to ensure that the converter is capable of delivering
the required load current over all operating conditions (line
IO(MAX) 2 2 +k • VO •
•C
•f
(1– D) RSS
The first term in the equation above represents the I2R
losses in the device, and the second term, the switching
losses. The constant, k = 1.7, is an empirical factor inversely
related to the gate drive current and has the dimension
of 1/current. The ρT term accounts for the temperature
coefficient of the RDS(ON) of the MOSFET, which is typically
0.4%/°C. Figure 4 illustrates the variation of normalized
RDS(ON) over temperature for a typical power MOSFET.
ρT NORMALIZED ON RESISTANCE
2.0
1.5
1.0
0.5
0
–50
50
100
0
JUNCTION TEMPERATURE (°C)
150
3782A F04
Figure 4. Normalized RDS(ON) vs Temperature
3782af
12
LT3782A
APPLICATIONS INFORMATION
From a known power dissipated in the power MOSFET, its
junction temperature can be obtained using the following
formula:
TJ = TA + PFET • RTH(JA)
The RTH(JA) to be used in this equation normally includes
the RTH(JC) for the device plus the thermal resistance from
the case to the ambient temperature (RTH(CA)). This value
of TJ can then be compared to the original, assumed value
used in the iterative calculation process.
Input Capacitor Choice
The input capacitor must have high enough voltage and
ripple current ratings to handle the maximum input voltage
and RMS ripple current rating. The input ripple current in
a boost circuit is very small because the input current is
continuous. With 2-phase operation, the ripple cancellation
1.00
0.90
will further reduce the input capacitor ripple current rating.
The ripple current is plotted in Figure 5. Please note that
the ripple current is normalized against:
Inorm =
VIN
L • fs
Output Capacitor Selection
The voltage rating of the output capacitor must be greater
than the maximum output voltage with sufficient derating. Because the ripple current in output capacitor is a
pulsating square wave in a boost circuit, it is important
that the ripple current rating of the output capacitor
be high enough to deal with this large ripple current.
Figure 6 shows the output ripple current in the 1- and 2phase designs. As shown, the output ripple current of a
2-phase boost circuit reaches almost zero when the duty
cycle equals 50% or the output voltage is twice as much as
the input voltage. Thus the 2-phase technique significantly
reduces the output capacitor size.
0.80
ΔIIN /INORM
0.70
0.60
1-PHASE
0.50
0.40
2-PHASE
IORIPPLE /IOUT
0.30
0.20
0.10
0
0
0.2
0.6
0.4
DUTY CYCLE
0.8
1.0
3782A F05
Inorm =
VIN
L • fs
The RMS Ripple Current is About 29% of
the Peak-to-Peak Ripple Current.
Figure 5. Normalized Input Peak-to-Peak Ripple Current
3.25
3.00
2.75
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0
0.1
1-PHASE
2-PHASE
0.2
0.3 0.4 0.5 0.6 0.7 0.8
DUTY CYCLE OR (1-VIN / VOUT)
0.9
3782A F06
Figure 6. Normalized Output RMS Ripple Currents in Boost
Converter: 1-Phase and 2-Phase. IOUT Is the DC Output Current.
3782af
13
LT3782A
APPLICATIONS INFORMATION
For a given VIN and VOUT, we can calculate the duty cycle D
and then derive the output RMS ripple current from Figure
6. After choosing output capacitors with sufficient RMS
ripple current rating, we also need to consider the ESR
requirement if electrolytic caps, tantulum caps, POSCAPs
or SP CAPs are selected. Given the required output ripple
voltage spec ΔVOUT (in RMS value) and the calculated RMS
ripple current ΔIOUT, one can estimate the ESR value of
the output capacitor to be
ESR ≤
ΔVOUT
ΔIOUT
External Regulator to Bias Gate Drivers
For applications with VIN higher than 24V, the IC temperature
may get too high. To reduce heat, an external regulator
between 12V to 14V should be used to override the internal
VGBIAS regulator to supply the current needed for BGATE1
and BGATE2 (see Figure 7).
Efficiency Considerations
The efficiency of a switching regulator is equal to the output power divided by the input power (¥100%). Percent
efficiency can be expressed as:
% Efficiency = 100% – (L1 + L2 + L3 + …),
where L1, L2, etc. are the individual loss components
as a percentage of the input power. It is often useful to
analyze individual losses to determine what is limiting
the efficiency and which change would produce the most
LT3782A
improvement. Although all dissipative elements in the
circuit produce losses, four main sources usually account
for the majority of the losses in LT3782A application
circuits:
1. The supply current into VIN. The VIN current is the sum
of the DC supply current IQ (given in the Electrical Characteristics) and the MOSFET driver and control currents.
The DC supply current into the VIN pin is typically about
7mA and represents a small power loss (much less
than 1%) that increases with VIN. The driver current
results from switching the gate capacitance of the power
MOSFET; this current is typically much larger than the
DC current. Each time the MOSFET is switched on and
then off, a packet of gate charge QG is transferred from
GBIAS to ground. The resulting dQ/dt is a current that
must be supplied to the GBIAS capacitor through the
VIN pin by an external supply. In normal operation:
IQ(TOT) ≈ IQ = f • QG
PIC = VIN • (IQ + f • QG)
2. Power MOSFET switching and conduction losses:
IO(MAX) 2
2
• RDS(ON) • DMAX • T
PFET = 1– DMAX IO(MAX)
+ k • VO2 •
GBIAS
2
• CRSS • f
1– DMAX
+
12V
GBIAS1
GBIAS2
3782A F07
2μF
Figure 7
3782af
14
LT3782A
APPLICATIONS INFORMATION
3. The I2R losses in the sense resistor can be calculated
almost by inspection.
IO(MAX) 2
2
• R • DMAX
PR(SENSE) = 1– DMAX 4. The losses in the inductor are simply the DC input current squared times the winding resistance. Expressing
this loss as a function of the output current yields:
IO(MAX) 2
2
• RW
PR(WINDING) = 1– DMAX 5. Losses in the boost diode. The power dissipation in the
boost diode is:
PDIODE =
IO(MAX)
2
• VD
The boost diode can be a major source of power loss
in a boost converter. For 13.2V input, 42V output at 3A,
a Schottky diode with a 0.4V forward voltage would
dissipate 600mW, which represents about 1% of the
input power. Diode losses can become significant at
low output voltages where the forward voltage is a
significant percentage of the output voltage.
6. Other losses, including CIN and CO ESR dissipation and
inductor core losses, generally account for less than
2% of the total losses.
PCB Layout Considerations
To achieve best performance from an LT3782A circuit, the
PC board layout must be carefully done. For lower power
applications, a two-layer PC board is sufficient. However,
at higher power levels, a multiplayer PC board is recommended. Using a solid ground plane under the circuit is
the easiest way to ensure that switching noise does not
affect the operation.
In order to help dissipate the power from MOSFETs and
diodes, keep the ground plane on the layers closest to the
layers where power components are mounted. Use power
planes for MOSFETs and diodes in order to improve the
spreading of the heat from these components into the
PCB.
For best electrical performance, the LT3782A circuit should
be laid out as follows:
Place all power components in a tight area. This will
minimize the size of high current loops. Orient the input
and output capacitors and current sense resistors in a way
that minimizes the distance between the pads connected
to ground plane.
Place the LT3782A and associated components tightly together and next to the section with power components.
Use a local via to ground plane for all pads that connect to
ground. Use multiple vias for power components.
Connect the current sense inputs of LT3782A directly
to the current sense resistor pads. Connect the current
sense traces on the opposite sides of pads from the traces
carrying the MOSFETs source currents to ground. This
technique is referred to as Kelvin sensing.
3782af
15
LT3782A
TYPICAL APPLICATIONS
10V to 24V Input to 24V, 8A Output Boost Converter
1
3
4
5
10Ω
VCC
NC
NC
NC
GND
LT3782A
VEE1
SYNC
DELAY
BGATE1
DCL
GBIAS1
8
SENSE1+
GBIAS2
9
–
7
CS1
SGATE1
10V TO 24V INPUT
28
2R2
27
L1
PB2020-103
26
1μF
25
CS1
23
10
11
21
CIN
22μF
25V
SLOPE
VEE2
NC
RSET
12
SENSE2–
RUN
13
SENSE2+
FB
14
VC
SS
20
COUT1
22μF, 25V, ×4
OUTPUT
24V
8A
0.004Ω
19
CS2
18
825k
17
274k
16
24.9k
15
221k
Q2
PH3330
•
10nF
CS2
BGATE2
SENSE1
COUT2
330μF, 35V, ×2
0.004Ω
22
2.2μF
82k
10Ω
Q1
PH3330
24
10nF
59k
D1
UPS840
+
6
GBIAS
•
2
SGATE2
L2
PB2020-103
D2
UPS840
3782A TA02
4.7nF
L1, L2: PULSE PB2020-103
ALL CERAMIC CAPACITORS ARE X7R, TDK
CC1
RC1 CC2
6.8nF
13.3k 100pF
*OUTPUT CURRENT WITH BOTH INPUTS PRESENT
Efficiency
100
98
15VIN
EFFICIENCY (%)
96
12VIN
94
92
90
88
86
0
1
2
3
4
5
IOUT (A)
6
7
8
3782A TA02b
3782af
16
R6
56.2k
R5
23.7k
R2
60.4k
C4
22pF
SENSE2–
C9
2.2nF
R1
10Ω
SENSE1
+
×2
R3
10Ω
10μF
×2
SGATE1
SGATE2
SENSE2+
C2
0.1μF
SENSE1–
C3
2.2nF
+ 330μF
VIN
10V TO 14V
14
13
12
11
10
9
8
7
6
5
4
3
2
1
–
SS
SENSE2+
SENSE2
RSET
SLOPE
SENSE1–
RUN
GND
VEE2
BGATE2
GBIAS2
GBIAS1
BGATE1
VEE1
GND
GND
VCC1
GBIAS
15
16
17
18
19
20
21
22
23
24
25
26
27
28
CC2
220pF
VC
FB = 2.44V
LT3782A
SENSE1+
DCL
DELAY
SYNC
GND
GND
SGATE1
SGATE2
RUN
BG2
BG1
CC1
6.8nF
RC1
15k
L2
8.3μH
L1
8.3μH
SGATE1
C10
1μF
3
2
1
R4
53.6k
RFB1
475k
VOUT
C1
2.2μF
C8
2.2μF
5V
R7
402k
RB
825k
RUN
IN
GND
VCC
4
5
6
C12
0.001μF
3
2
1
SENSE1–
SGATE2
C5
1μF
BG1
TS
TG
BST
SENSE1+
LTC4440-5
5V
VIN
IN
GND
VCC
D3
PD3S160
SENSE2–
SENSE2+
TS
TG
BST
BG2
LTC4440-5
D4
PD3S160
0.006Ω
Q2
HAT2172H
4
5
6
C7
1μF
12V Input to 24V at 8.5A Output Synchronous Boost Converter
RS4
0.006Ω
Q5
HAT2172H
BG1
Q6
HAT2166H
C6
1μF
BG2
3782A TA04
HAT2166H
0.006Ω
Q1
HAT2172H
D1
DFLS160
RS3
0.006Ω
Q4
HAT2172H
DFLS160
C13
10μF
×4
330μF
×4
+ C11
VOUT
24V AT 8.5A
LT3782A
TYPICAL APPLICATIONS
3782af
17
LT3782A
PACKAGE DESCRIPTION
FE Package
28-Lead Plastic TSSOP (4.4mm)
(Reference LTC DWG # 05-08-1663)
Exposed Pad Variation EB
9.60 – 9.80*
(.378 – .386)
4.75
(.187)
4.75
(.187)
28 2726 25 24 23 22 21 20 19 18 1716 15
6.60 ±0.10
2.74
(.108)
4.50 ±0.10
SEE NOTE 4
0.45 ±0.05
EXPOSED
PAD HEAT SINK
ON BOTTOM OF
PACKAGE
6.40
2.74
(.252)
(.108)
BSC
1.05 ±0.10
0.65 BSC
RECOMMENDED SOLDER PAD LAYOUT
4.30 – 4.50*
(.169 – .177)
0.09 – 0.20
(.0035 – .0079)
0.50 – 0.75
(.020 – .030)
NOTE:
1. CONTROLLING DIMENSION: MILLIMETERS
2. DIMENSIONS ARE IN MILLIMETERS
(INCHES)
3. DRAWING NOT TO SCALE
1 2 3 4 5 6 7 8 9 10 11 12 13 14
0.25
REF
1.20
(.047)
MAX
0° – 8°
0.65
(.0256)
BSC
0.195 – 0.30
(.0077 – .0118)
TYP
0.05 – 0.15
(.002 – .006)
FE28 (EB) TSSOP 0204
4. RECOMMENDED MINIMUM PCB METAL SIZE
FOR EXPOSED PAD ATTACHMENT
*DIMENSIONS DO NOT INCLUDE MOLD FLASH. MOLD FLASH
SHALL NOT EXCEED 0.150mm (.006") PER SIDE
3782af
18
LT3782A
PACKAGE DESCRIPTION
UFD Package
28-Lead Plastic QFN (4mm × 5mm)
(Reference LTC DWG # 05-08-1712 Rev B)
0.70 ±0.05
4.50 ± 0.05
3.10 ± 0.05
2.50 REF
2.65 ± 0.05
3.65 ± 0.05
PACKAGE OUTLINE
0.25 ±0.05
0.50 BSC
3.50 REF
4.10 ± 0.05
5.50 ± 0.05
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
APPLY SOLDER MASK TO AREAS THAT ARE NOT SOLDERED
4.00 ± 0.10
(2 SIDES)
0.75 ± 0.05
R = 0.05
TYP
PIN 1 NOTCH
R = 0.20 OR 0.35
× 45° CHAMFER
2.50 REF
R = 0.115
TYP
27
28
0.40 ± 0.10
PIN 1
TOP MARK
(NOTE 6)
1
2
5.00 ± 0.10
(2 SIDES)
3.50 REF
3.65 ± 0.10
2.65 ± 0.10
(UFD28) QFN 0506 REV B
0.25 ± 0.05
0.200 REF
0.50 BSC
0.00 – 0.05
BOTTOM VIEW—EXPOSED PAD
NOTE:
1. DRAWING PROPOSED TO BE MADE A JEDEC PACKAGE OUTLINE MO-220 VARIATION (WXXX-X).
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION
ON THE TOP AND BOTTOM OF PACKAGE
3782af
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
19
LT3782A
TYPICAL APPLICATION
28V Output Base Station Power Converter with Redundant Input
1
3
4
5
7
10Ω
CS1
GBIAS
VCC
NC
NC
NC
GND
LT3782A
VEE1
SYNC
BGATE1
DELAY
DCL
GBIAS1
8
SENSE1+
GBIAS2
9
SENSE1–
2R2
27
25
Q1
PH4840S
1μF
CINA
22μF
24
CS1
23
COUT2
330μF, 35V, ×2
0.004Ω
21
COUT1
10μF, 50V, ×4
2.2μF
59k
10
82k
11
VEE2
NC
RSET
12
SENSE2–
RUN
13
SENSE2+
FB
14
VC
SS
20
OUTPUT
28V
4A (8A**)
0.004Ω
19
18
825k
17
274k
16
24.9k
15
261k
CS2
CINB
22μF
Q2
PH4840S
•
10nF
CS2
BGATE2
SLOPE
D1
UPS840
22
10nF
10Ω
L1
10μH
BAS516
26
+
6
SGATE2
SGATE1
•
2
VINA
0V TO 28V*
28
BAS516
L2
10μH
D2
UPS840
3782A TA03
4.7nF
RC1 CC2
15k 100pF
CC1
4.7nF
NOTE:
VINB
0V TO 28V* *INPUT VOLTAGE RANGE FOR VINA AND VINB IS 0V TO 28V.
AT LEAST ONE OF THE INPUTS MUST BE 12V OR HIGHER.
L1, L2: PULSE PB2020-103
ALL CERAMIC CAPACITORS ARE X7R, TDK
**OUTPUT CURRENT WITH BOTH INPUTS 12V OR HIGHER
RELATED PARTS
PART NUMBER
DESCRIPTION
COMMENTS
LT 1619
Current Mode PWM Controller
300kHz Fixed Frequency, Boost, SEPIC, Flyback Topology
LTC1624
Current Mode DC/DC Controller
SO-8; 300kHz Operating Frequency; Buck, Boost, SEPIC Design; VIN Up to 36V
LTC1696
Overvoltage Protection Controller
0.8V ≤ VIN ≤ 24V, ±2% Overvoltage Threshold Accuracy, ThinSOT™ Package
LTC1700
No RSENSE™ Synchronous Step-Up Controller
Up to 95% Efficiency, Operation as Low as 0.9V Input
®
LTC1871/LTC1871-7
Wide Input Range Controller
No RSENSE, 7V Gate Drive, Current Mode Control
LT1930
1.2MHz, SOT-23 Boost Converter
Up to 34V Output, 2.6V ≤ VIN ≤ 16V, Miniature Design
LT1952
Single Switch Synchronous Forward Controller
High Efficiency, 25W to 500W, Wide Input Range, Adaptive Duty Cycle Clamp
LTC3425
5A, 8MHz 4-Phase Monolithic Step-Up DC/DC
Converter
0.5V ≤ VIN ≤ 4.5V, 2.4V ≤ VOUT ≤ 5.25V, Very Low Output Ripple
LTC3703/LTC3703-5
100V and 60V, Step-Down and Step-Up DC/DC
Synchronous Controller
High Efficiency Synchronous Operation, High Voltage Operation,
No Transformer Required
LTC3729L-6
20A to 200A, 250kHz to 550kHz PolyPhase®
Synchronous Controller
Expandable from 2-Phase to 12-Phase, Uses All Surface Mount Components,
VIN Up to 30V
LTC3731
3-Phase to 12-Phase Synchronous Controller
60A to 240A Output Current, 0.6V ≤ VOUT ≤ 6V, 4.5V ≤ VIN ≤ 32V
LT3782
2-Phase Step-Up DC/DC Controller
Pin Compatible with LT3782A
LTC3803
SOT-23 Flyback Controller
Adjustable Slope Compensation, Internal Soft-Start
LTC3806
Synchronous Flyback Controller
High Efficiency, Improves Cross Regulation in Multiple Output Designs,
Current Mode, 3mm × 4mm 12-Pin DFN Package
LTC3850
Dual, 250kHz to 750kHz, 2-Phase Synchronous
Step-Down Controller
VIN: 4V to 30V, 99% Duty Cycle, 4mm × 4mm QFN, 4mm × 5mm QFN and
SSOP-28 Packages
LTC3862/LTC3862-1
Multiphase High Power Current Mode Step-Up
Controller
4V ≤ VIN ≤ 36V Expandable from 2-Phase to 12-Phase
PolyPhase is a registered trademark of Linear Technology Corporation. ThinSOT and No RSENSE are trademarks of Linear Technology Corporation.
3782af
20 Linear Technology Corporation
LT 1208 • PRINTED IN USA
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507
●
www.linear.com
© LINEAR TECHNOLOGY CORPORATION 2008
Similar pages