Power Transistor MN611S ºC ºC VCB=105V VEB=6V IC=50mA VCE=1V, IC=1A IC=1.2A, IB=12mA I FEC=6A L=10mA max 115 800 0.08 1.25 10 10 125 1500 0.12 1.5 105 400 Unit µA µA V V V mJ 45 4.44±0.2 10.2±0.3 (1.4) ICBO IEBO VCEO hFE VCE (sat) VFEC ES/B min +0.3 Test Conditions 1.3±0.2 a 1.6 b +0.2 (1.5) Tj Tstg W Symbol External Dimensions TO220S (Ta=25ºC) Ratings typ Typical Switching Characteristics VCC (V) 12 RL (Ω) 12 VBB1 (V) 10 VBB2 (V) –5 IC (A) 1 +0.2 0.86 –0.1 0.4±0.1 1.2±0.2 tf IB2 ton tstg (mA) (µs) (µs) (µs) –30 0.2typ 5.7typ 0.4typ IB1 (mA) 30 0.1 –0.1 1.27±0.2 +0.3 PC Electrical Characteristics Unit V V V A A 10.0 –0.5 Ratings 115±10 115±10 6 ±6 (pulse ±10) 1 50 (Tc=25ºC) 1.2 (Ta=25ºC, No Fin) 150 –55 to +150 3.0 –0.5 Symbol VCBO VCEO VEBO IC IB 8.6±0.3 Absolute Maximum Ratings (Ta=25ºC) 2.54±0.5 2.54±0.5 a) Part No. b) Lot No. ■ IC — VCE Characteristics (typ.) (Ta = 25ºC) 8 (Unit: mm) ■ VCE (sat) — IB Characteristics (typ.) (Ta = 25ºC) 0.75 7 30mA 6 20mA VCE (sat) (V) IC (A) IC = 2A 10mA 5 5mA 4 3 3mA 0.5 IC = 1.2A 0.25 2 IB = 1mA 1 IC = 0.5A 0 0 0 1 2 3 4 5 0 6 10 VCE (V) 100 1000 IB (mA) ■ VCE (sat) — IB Temperature Characteristics (typ.) ■ IC — VBE Temperature Characteristics (typ.) (IC = 1.2A) 0.75 ■ IFEC — VFEC Temperature Characteristics (typ.) (VCE = 1V) 7 7 6 Ta = 150ºC 125ºC 75ºC 25ºC –55ºC 0.5 Ta = 150ºC 125ºC 75ºC 25ºC –55ºC 0.25 0 4 3 100 2 1 1 0 0 0.5 IB (mA) typ 10 Ta = 150ºC 125ºC 75ºC 25ºC –55ºC 30 0.01 0.1 Ic (A) j-c • j-a — t Characteristics (Single pulse) tstg Ta = 25ºC VCC = 12V IB1 = –IB2 = 30mA 1 tf ton 0.1 1 0 10 1 j-a FR4 (70 • 100 • 1.6mm) Use substrate 3 ■ PT — Ta Derating (Ta = 25ºC) 20 2 Ic (A) ■ Safe Operating Area (Single pulse) (Tc = 25ºC) 1.5 10 Ic (A) 50 1.0 ■ ton• tstg •t f — IC Characteristics (typ.) (VCE = 1V) 5000 hFE hFE 1 0.1 0.5 VFEC (V) ■ hFE — IC Temperature Characteristics (typ.) 100 30 0.01 60 10 50 j-c 1 PC (W) 40 IC (A) (ºC/W) 0 1000 100 j-c • j-a 1.5 ton • tstg • tf (µsec) (Ta = 25ºC) (VCE = 1V) 5000 1000 1.0 VBE (V) ■ hFE — IC Characteristics (typ.) 10 3 2 1000 Ta = 150ºC 125ºC 75ºC 25ºC –55ºC 4 0 10 0 ■ 5 IFEC (A) 5 IC (A) VCE (sat) (V) 6 PT =50µs PT =500µs PT =1ms PT =10ms 1 30 20 0.1 0.001 Without heatsink 0.01 0.1 t (s) 1 10 10 0 0.1 1 10 VCE (V) 100 200 0 25 50 75 100 Ta (ºC) 125 150 93