IRF830 ! POWER MOSFET GENERAL DESCRIPTION FEATURES This Power MOSFET is designed for low voltage, high Higher Current Rating speed power switching applications such as switching Lower rDS(ON), Lower Capacitances regulators, conveters, solenoid and relay drivers. Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified PIN CONFIGURATION SYMBOL D TO-220/TO-220FP SO URCE DRAIN G ATE Top View G S 1 2 N-Channel MOSFET 3 ORDERING INFORMATION Part Number Package .................IRF830....................................................TO-220 .................IRF830FP TO-220FP ABSOLUTE MAXIMUM RATINGS Rating Drain to Current Ё Continuous Symbol Value Unit A ID 5.0 IDM 18 Gate-to-Source Voltage Ё Continue VGS ±20 Total Power Dissipation PD Ё Pulsed (Note 1) Derate above 25к Single Pulse Avalanche Energy (Note 2) Operating and Storage Temperature Range Thermal Resistance Ё Junction to Case Ё Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds V 96 W 0.77 W/к EAS 125 mJ TJ, TSTG -55 to 150 к șJC 1.70 к/W șJA 62 TL 300 к Page 1 IRF830 ! POWER MOSFET ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25к. CIRF830 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 ӴA) Symbol Min V(BR)DSS 500 Typ Max Units V ӴA Drain-Source Leakage Current (VDS = 500V, VGS = 0 V) IDSS Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) IGSSF 100 nA Gate-Source Leakage Current-Reverse (Vgsr = -20 V, VDS = 0 V) IGSSR -100 nA Gate Threshold Voltage (VDS = VGS, ID = 250 ӴA) VGS(th) 4.0 V Static Drain-Source On-Resistance (VGS = 10 V, ID = 2.7A) (Note 3) RDS(on) 25 Forward Transconductance (VDS = 15V, ID = 2.5 A) (Note 3) Input Capacitance (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time (VDD = 250 V, ID = 5 A, RG = 9.1ȍ, VGS = 10 V) (Note 3) Fall Time Total Gate Charge gFS 2.0 1.5 2.8 ȍ mhos Ciss 520 730 Coss 170 240 pF pF Crss 11 20 pF td(on) 7.0 10 tr 9.0 20 ns ns td(off) 20 40 ns tf 10 20 ns Qg 10 Qgs 2 nC nC Qgd 3 nC Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) LD 4.5 nH Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) LS 7.5 nH Qrr 1.8 µC (VDS = 400V, ID = 5A VGS = 10 V) (Note 3) Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE CHARACTERISTICS Reverse Recovery Charge Forward Turn-On Time IF = 5A, di/dt = 100A/µs , TJ = 25к Reverse Recovery Time Diode Forward Voltage IS = 5A, VGS = 0 V ton ** trr 415 VSD ns 1.5 V Note (1) Repetitive rating; pulse width limited by max. junction temperature (2) VDD = 100V, VGS = 10V, L=10mH, IAS = 5A, RG = 25ȍ (3) Pulse.Test:.Duty Cycle Љ2% , Pulse.Width Љ300µs Љ Љ к ** Negligible, Dominated by circuit inductance P Page 2 ! IRF830 POWER MOSFET TYPICAL ELECTRICAL CHARACTERISTICS Page 3 IRF830 ! POWER MOSFET PACKAGE DIMENSION TO-220 A D c1 PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE E1 E F φ A A1 L1 b b1 c c1 D L E E1 e e1 F L b1 L1 A1 c e b e1 φ Side View Front View TO-220FP C I 0 R1 .5 0 0.1 8² 1 . R3 B J H Q D R1 .5 0 A A B C D E E G H I O P K J K 0 .6 R1 M N O P G Q b R b b1 b2 e N M b2 b1 e Front View R Side View Back View Page 4