PD - 94440 IRG4PC60F-P Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. • Solder plated version of industry standard TO-247AC package. VCES = 600V VCE(on) typ. = 1.50V G @VGE = 15V, IC = 60A E n-channel Benefits • Generation 4 IGBT's offer highest efficiency available. • IGBT's optimized for specified application conditions. • Solder plated version of the TO-247 allows the reflow soldering of the package heatsink to a substrate material. • Designed for best performance when used with IR HEXFRED & IR FRED companion diodes. TO-247AC Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Max. Units Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Maximum Reflow Temperature W 600 90 60 120 120 ± 20 200 520 210 -55 to + 150 V A V mJ W °C 300 (0.063 in. (1.6mm from case ) 10 lbf•in (1.1N•m) 230 (Time above 183°C should not exceed 100s) °C Thermal Resistance Parameter RθJC RθCS RθJA RθJA Wt www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient (Typical Socket Mount) Junction-to-Ambient (PCB Mount, Steady State)V Weight Typ. Max. ––– 0.24 ––– ––– 6 (0.21) 0.24 ––– 40 20 ––– Units °C/W g (oz) 1 04/26/02 IRG4PC60F-P Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 — Emitter-to-Collector Breakdown Voltage T 16 — ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.13 — 1.5 VCE(ON) Collector-to-Emitter Saturation Voltage — 1.7 — 1.5 VGE(th) Gate Threshold Voltage 3.0 — ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -11 gfe Forward Transconductance U 36 69 — — ICES Zero Gate Voltage Collector Current — — — — IGES Gate-to-Emitter Leakage Current — — V(BR)CES V(BR)ECS Max. Units Conditions — V VGE = 0V, IC = 250µA — V VGE = 0V, IC = 1.0A — V/°C VGE = 0V, IC = 1.0mA VGE = 15V 1.8 IC = 60A — IC = 90A See Fig.2, 5 V — IC = 60A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 250µA — S VCE = 100V, IC = 60A 250 VGE = 0V, VCE = 600V µA 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 1000 VGE = 0V, VCE = 600V, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) R VCC = 80%(VCES), VGE = 20V, Rg = 5.0W. (See fig. 13a) S Repetitive rating; pulse width limited by maximum junction temperature. T Pulse width ≤ 80µs; duty factor ≤ 0.1%. Q 2 Min. — — — — — — — — — — — — — — — — — — — Typ. 290 40 100 42 66 310 170 0.30 4.6 4.9 39 66 470 300 8.8 13 6050 360 66 Max. Units Conditions 340 IC = 40A 47 nC VCC = 400V See Fig. 8 130 VGE = 15V — — TJ = 25°C ns 360 IC = 60A, VCC = 480V 220 VGE = 15V, RG = 5.0Ω — Energy losses include "tail" — mJ See Fig. 10, 11, 13, 14 6.3 — TJ = 150°C, — IC = 60A, VCC = 480V ns — VGE = 15V, RG = 5.0Ω — Energy losses include "tail" — mJ See Fig. 13, 14 — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz U Pulse width 5.0µs, single shot. V When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. W Refer to application note # 1023, "Surface Mounting of Larger Devices." www.irf.com IRG4PC60F-P 80 Duty cycle : 50% Tj = 125°C Tsink = 90°C Ta = 55°C Gate drive as specified Turn-on losses include effects of reverse recovery Power Dissipation = 73W for Heatsink Mount Power Dissipation = 3.5W for typical PCB socket Mount 70 Load Current ( A ) 60 60% of rated voltage 50 40 Ideal diodes 30 20 10 0 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) 1000 IC, Collector-to-Emitter Current (A) IC , Collector t-to-Emitter Current (A) 1000 T J = 150°C 100 10 1 T J = 25°C 0.1 VGE = 15V 20µs PULSE WIDTH 100 T J = 150°C 10 1 T J = 25°C 0.1 VCC = 10V 5µs PULSE WIDTH 0.01 0.01 0.0 1.0 2.0 3.0 4.0 5.0 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com 4 5 6 7 8 9 10 11 VGE, Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4PC60F-P 3.0 100 V GE = 15V VCE , Collector-to Emitter Voltage (V) Maximum DC Collector Current (A) 90 80 70 60 50 40 30 20 10 VGE = 15V 80µs PULSE WIDTH IC = 120A 2.0 IC = 60A IC = 30A 1.0 0 25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) T C , Case Temperature (°C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature ) thJC 1 D = 0.50 Thermal Response (Z 0.1 0.20 0.10 0.05 0.01 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 0.001 0.00001 0.0001 0.001 0.01 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJC +T C 0.1 1 t 1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC60F-P 100000 V CC = 400V IC Coes = Cce + Cgc 10000 = 40A 15 Cies VGE, Gate-to-Emitter Voltage (V) Capacitance (pF) 20 VGE = 0V, f = 1 MHZ Cies = Cge + Cgc, Cce SHORTED Cres = Cce 1000 Coes 100 Cres 10 5 10 0 100 200 300 400 0 500 0 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 100 150 200 250 300 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 100 8.00 RG = 5.0 Ω VGE = 15V VCC = 480V VGE = 15V TJ = 25°C I C = 60A 7.00 Total Switching Losses (mJ) Total Switching Losses (mJ) 50 QG , Total Gate Charge (nC) VCE (V) 6.00 5.00 VCC = 480V IC = 120A 10 IC = 60A IC = 30A 1 4.00 0 10 20 30 40 R G, Gate Resistance (Ω ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 50 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J, Junction Temperature (°C) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PC60F-P 1000 RG = 5.0Ω TJ = 150°C VGE = 15V IC , Collector-to-Emitter Current (A) Total Switching Losses (mJ) 30.0 VCC = 480V 20.0 10.0 0.0 100 SAFE OPERATING AREA 10 1 30 50 70 90 110 IC , Collector Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 VGE = 20V T J = 125° 130 0.1 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig. 12 - Turn-Off SOA www.irf.com IRG4PC60F-P L D .U .T. VC * 50V RL = 0 - 480V 1 00 0V 480V 4 X IC@25°C 480µF 960V Q R * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L D river* D .U .T. VC Fig. 14a - Switching Loss Test Circuit 50V 1000V Q * Driver same type as D.U.T., VC = 480V R S Q R 9 0% 1 0% S VC 90 % Fig. 14b - Switching Loss t d (o ff) 10 % IC 5% Waveforms tf tr t d (o n ) t=5µ s E on E o ff E ts = ( Eo n +E o ff ) www.irf.com 7 IRG4PC60F-P Case Outline and Dimensions — TO-247AC 3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 0 .2 5 (.0 1 0 ) M D B M 1 5 .9 0 (.6 2 6 ) 1 5 .3 0 (.6 0 2 ) -B- -A5 .5 0 (.2 1 7) 2 0 .3 0 (.8 0 0 ) 1 9 .7 0 (.7 7 5 ) 2X 1 2 -D- 5 .3 0 ( .2 0 9 ) 4 .7 0 ( .1 8 5 ) 2 .5 0 (.0 8 9 ) 1 .5 0 (.0 5 9 ) 4 5 .5 0 (.2 17 ) 4 .5 0 (.1 77 ) LEAD 1234- 3 -C- * 1 4 .8 0 (.5 8 3 ) 1 4 .2 0 (.5 5 9 ) 2 .4 0 ( .0 9 4 ) 2 .0 0 ( .0 7 9 ) 2X 5 .4 5 (.2 1 5 ) 2X 4 .3 0 (.1 7 0 ) 3 .7 0 (.1 4 5 ) 3X 1 .4 0 (.0 5 6 ) 1 .0 0 (.0 3 9 ) 0 .2 5 (.0 1 0 ) M 3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 ) N O TE S : 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 14 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M ILL IM E T E R S (IN C H E S ). 4 C O N F O R M S T O JE D E C O U T L IN E T O -2 4 7 A C . * A S S IG N M E N T S GATE COLLE CTO R E M IT T E R COLLE CTO R L O N G E R L E A D E D (2 0m m ) V E R S IO N A V A IL A B LE (T O -24 7 A D ) T O O R D E R A D D "-E " S U F F IX T O P A R T N U M B ER 0 .8 0 (.0 3 1 ) 0 .4 0 (.0 1 6 ) 2 .6 0 ( .1 0 2 ) 2 .2 0 ( .0 8 7 ) 3X C A S CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P) D im e n s ion s in M illim e te rs a n d (In c h es ) Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.04/02 8 www.irf.com