Rohm DTA144EKA 100ma / -50v digital transistor Datasheet

-100mA / -50V Digital transistors
(with built-in resistors)
DTA144EM / DTA144EE / DTA144EUA / DTA144EKA
Dimensions (Unit : mm)
DTA144EM
Features
1) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see the equivalent circuit).
1.2
0.32
0.2
Applications
Inverter, Interface, Driver
0.8
1.2
(3)
0.2
(1)(2)
0.22
0.4 0.4
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
(1) IN
(2) GND
(3) OUT
Abbreviated symbol : 16
DTA144EE
0.7
1.6
0.55
0.3
(2)
(1)
0.2
0.15
0.5 0.5
(1) GND
(2) IN
(3) OUT
1.0
ROHM : EMT3
Abbreviated symbol : 16
DTA144EUA
2.0
0.9
0.2
0.3
Packaging specifications
0.7
UMT3
SMT3
Taping
Taping
Taping
T2L
TL
T106
T146
(1)
(2)
0.65 0.65
8000
DTA144EM
3000
3000
3000
−
−
−
−
−
−
DTA144EUA
−
−
DTA144EKA
−
−
Abbreviated symbol : 16
DTA144EKA
−
0.15
1.3
1.1
2.9
0.4
−
(1) GND
(2) IN
(3) OUT
0.8
(3)
1.6
2.8
DTA144EE
ROHM : UMT3
EIAJ : SC-70
0.1Min.
EMT3
Taping
2.1
VMT3
Packaging type
1.25
(3)
Package
Basic ordering
unit (pieces)
0.1Min.
Structure
PNP epitaxial planar silicon transistor
(Resistor built-in type)
1.6
0.8
(3)
0.2
Type
0.13
ROHM : VMT3
3) Only the on / off conditions need to be set for operation,
making the device design easy.
Code
0.5
0.8
(2)
(1)
0.95 0.95
OUT
R1
IN
ROHM : SMT3
EIAJ : SC-59
0.15
1.9
0.3Min.
Equivalent circuit
(1) GND
(2) IN
(3) OUT
Abbreviated symbol : 16
R2
GND (+)
OUT
IN
GND (+)
R1=R2=47kΩ
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c 2011 ROHM Co., Ltd. All rights reserved.
○
1/2
2011.12 - Rev.C
DTA144EM / DTA144EE / DTA144EUA / DTA144EKA
Data Sheet
Absolute maximum ratings (Ta=25C)
Parameter
Limits
Symbol
DTA144EM
DTA144EE
DTA144EUA
Unit
DTA144EKA
Supply voltage
VCC
−50
V
Input voltage
VIN
−40 to +10
V
IO
−30
IC(Max.)
−100
Output current
Power dissipation
Pd
mA
150
mW
200
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Input voltage
Output voltage
Input current
Output current
Typ.
Max.
VI(off)
−
−
−0.5
Unit
VI(on)
−3.0
−
−
VO(on)
−
−0.1
−0.3
V
II
−
−
−0.18
mA
VI=−5V
IO(off)
−
−
−0.5
μA
VCC=−50V, VI=0V
VO=−5V, IO=−5mA
V
DC current gain
GI
68
−
−
−
Input resistance
R1
32.9
47
61.1
kΩ
Resistance ratio
R2/R1
fT ∗
0.8
1
1.2
−
−
250
−
MHz
Transition frequency
Conditions
VCC=−5V, IO=−100μA
VO=−0.3V, IO=−2mA
IO / II=−10mA / −0.5mA
−
−
VCE=−10V, IE=5mA, f=100MHz
∗ Characteristics of built-in transistor
Electrical characteristic curves
−100
OUTPUT CURRENT : Io (A)
INPUT VOLTAGE : VI(on) (V)
−20
−10
−5
−10m
VCC=−5V
−5m
VO=−0.3V
−50
Ta=−40°C
25°C
100°C
−2
−1
−500m
−200m
−100m
−100μ −200μ −500μ −1m −2m
−2m
−200μ
−100μ
−50μ
−20μ
−10μ
−5μ
−2μ
−1μ
0
−5m −10m −20m −50m−100m
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current
(ON characteristics)
1k
100
Ta=100°C
25°C
−40°C
50
20
10
5
2
−1.0
−1.5
−2.0
−2.5
−3.0
Fig.2 Output current vs. input voltage
(OFF characteristics)
−1
OUTPUT VOLTAGE : VO(on) (V)
DC CURRENT GAIN : GI
200
−0.5
INPUT VOLTAGE : VI(off) (V)
VO=−5V
500
Ta=100°C
25°C
−40°C
−1m
−500μ
−500m
−200m
lO/lI=20
Ta=100°C
25°C
−40°C
−100m
−50m
−20m
−10m
−5m
−2m
1
−100μ −200μ −500μ −1m −2m
−5m −10m −20m −50m−100m
−1m
−100μ −200μ -−500μ −1m −2m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output
current
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c 2011 ROHM Co., Ltd. All rights reserved.
○
−5m −10m −20m −50m−100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output
current
2/2
2011.12 - Rev.C
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R1120A