[ /Title (CD74 HC10, CD74 HCT10 ) /Subject (High Speed CMOS Logic Triple 3-Input NAND Gate) /Autho r () /Keywords (High Speed CMOS Logic Triple 3-Input NAND Gate, High Speed CMOS Logic Triple 3-Input NAND Gate, Harris Semi- CD54HC10, CD74HC10, CD54HCT10, CD74HCT10 Data sheet acquired from Harris Semiconductor SCHS128C High-Speed CMOS Logic Triple 3-Input NAND Gate August 1997 - Revised September 2003 Features Description • Buffered Inputs The ’HC10 and ’HCT10 logic gates utilize silicon gate CMOS technology to achieve operating speeds similar to LSTTL gates with the low power consumption of standard CMOS integrated circuits. All devices have the ability to drive 10 LSTTL loads. The HCT logic family is functionally pin compatible with the standard LS logic family. • Typical Propagation Delay: 8ns at VCC = 5V, CL = 15pF, TA = 25oC • Fanout (Over Temperature Range) - Standard Outputs . . . . . . . . . . . . . . . 10 LSTTL Loads - Bus Driver Outputs . . . . . . . . . . . . . 15 LSTTL Loads Ordering Information • Wide Operating Temperature Range . . . -55oC to 125oC • Balanced Propagation Delay and Transition Times PART NUMBER • Significant Power Reduction Compared to LSTTL Logic ICs TEMP. RANGE (oC) PACKAGE CD54HC10F3A -55 to 125 14 Ld CERDIP • HC Types - 2V to 6V Operation - High Noise Immunity: NIL = 30%, NIH = 30% of VCC at VCC = 5V CD54HCT10F3A -55 to 125 14 Ld CERDIP CD74HC10E -55 to 125 14 Ld PDIP CD74HC10M -55 to 125 14 Ld SOIC • HCT Types - 4.5V to 5.5V Operation - Direct LSTTL Input Logic Compatibility, VIL= 0.8V (Max), VIH = 2V (Min) - CMOS Input Compatibility, Il ≤ 1µA at VOL, VOH CD74HC10MT -55 to 125 14 Ld SOIC CD74HC10M96 -55 to 125 14 Ld SOIC CD74HCT10E -55 to 125 14 Ld PDIP CD74HCT10M -55 to 125 14 Ld SOIC CD74HCT10MT -55 to 125 14 Ld SOIC CD74HCT10M96 -55 to 125 14 Ld SOIC NOTE: When ordering, use the entire part number. The suffix 96 denotes tape and reel. The suffix T denotes a small-quantity reel of 250. Pinout CD54HC10, CD54HCT10 (CERDIP) CD74HC10, CD74HCT10 (PDIP, SOIC) TOP VIEW 1A 1 14 VCC 1B 2 13 1C 2A 3 12 1Y 2B 4 11 3C 2C 5 10 3B 2Y 6 9 3A GND 7 8 3Y CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures. Copyright © 2003, Texas Instruments Incorporated 1 CD54HC10, CD74HC10, CD54HCT10, CD74HCT10 Functional Diagram 1 14 2 13 1A 1B 2A 2B 2C 2Y GND VCC 1C 3 12 4 11 5 10 6 9 7 8 1Y 3C 3B 3A 3Y TRUTH TABLE INPUTS OUTPUT nA nB nC nY L L L H L L H H L H L H L H H H H L L H H L H H H H L H H H H L H = High Voltage Level, L = Low Voltage Level Logic Symbol nA nY nB nC 2 CD54HC10, CD74HC10, CD54HCT10, CD74HCT10 Absolute Maximum Ratings Thermal Information DC Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7V DC Input Diode Current, IIK For VI < -0.5V or VI > VCC + 0.5V . . . . . . . . . . . . . . . . . . . . . .±20mA DC Output Diode Current, IOK For VO < -0.5V or VO > VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±20mA DC Output Source or Sink Current per Output Pin, IO For VO > -0.5V or VO < VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±25mA DC VCC or Ground Current, ICC or IGND . . . . . . . . . . . . . . . . . .±50mA Thermal Resistance (Typical, Note 1) θJA (oC/W) E (PDIP) Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80 M (SOIC) Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86 Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 150oC Maximum Storage Temperature Range . . . . . . . . . .-65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300oC (SOIC - Lead Tips Only) Operating Conditions Temperature Range (TA) . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC Supply Voltage Range, VCC HC Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2V to 6V HCT Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 5.5V DC Input or Output Voltage, VI, VO . . . . . . . . . . . . . . . . . 0V to VCC Input Rise and Fall Time 2V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000ns (Max) 4.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500ns (Max) 6V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400ns (Max) CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. The package thermal impedance is calculated in accordance with JESD 51-7. DC Electrical Specifications TEST CONDITIONS PARAMETER SYMBOL VI (V) High Level Input Voltage VIH - Low Level Input Voltage VIL 25oC IO (mA) VCC (V) -40oC TO 85oC -55oC TO 125oC MIN TYP MAX MIN MAX MIN MAX UNITS 2 1.5 - - 1.5 - 1.5 - V 4.5 3.15 - - 3.15 - 3.15 - V 6 4.2 - - 4.2 - 4.2 - V 2 - - 0.5 - 0.5 - 0.5 V 4.5 - - 1.35 - 1.35 - 1.35 V 6 - - 1.8 - 1.8 - 1.8 V -0.02 2 1.9 - - 1.9 - 1.9 - V -0.02 4.5 4.4 - - 4.4 - 4.4 - V -0.02 6 5.9 - - 5.9 - 5.9 - V - - - - - - - - - V HC TYPES High Level Output Voltage CMOS Loads VOH - VIH or VIL High Level Output Voltage TTL Loads Low Level Output Voltage CMOS Loads VOL VIH or VIL Low Level Output Voltage TTL Loads Input Leakage Current II VCC or GND - - -4 4.5 3.98 - - 3.84 - 3.7 - V -5.2 6 5.48 - - 5.34 - 5.2 - V 0.02 2 - - 0.1 - 0.1 - 0.1 V 0.02 4.5 - - 0.1 - 0.1 - 0.1 V 0.02 6 - - 0.1 - 0.1 - 0.1 V - - - - - - - - - V 4 4.5 - - 0.26 - 0.33 - 0.4 V 5.2 6 - - 0.26 - 0.33 - 0.4 V - 6 - - ±0.1 - ±1 - ±1 µA 3 CD54HC10, CD74HC10, CD54HCT10, CD74HCT10 DC Electrical Specifications (Continued) TEST CONDITIONS SYMBOL VI (V) ICC VCC or GND 0 High Level Input Voltage VIH - Low Level Input Voltage VIL High Level Output Voltage CMOS Loads VOH PARAMETER Quiescent Device Current 25oC IO (mA) VCC (V) -40oC TO 85oC -55oC TO 125oC MIN TYP MAX MIN MAX MIN MAX UNITS 6 - - 2 - 20 - 40 µA - 4.5 to 5.5 2 - - 2 - 2 - V - - 4.5 to 5.5 - - 0.8 - 0.8 - 0.8 V VIH or VIL -0.02 4.5 4.4 - - 4.4 - 4.4 - V -4 4.5 3.98 - - 3.84 - 3.7 - V 0.02 4.5 - - 0.1 - 0.1 - 0.1 V 4 4.5 - - 0.26 - 0.33 - 0.4 V ±0.1 - ±1 - ±1 µA HCT TYPES High Level Output Voltage TTL Loads Low Level Output Voltage CMOS Loads VOL VIH or VIL Low Level Output Voltage TTL Loads Input Leakage Current Quiescent Device Current Additional Quiescent Device Current Per Input Pin: 1 Unit Load II VCC and GND 0 5.5 - ICC VCC or GND 0 5.5 - - 2 - 20 - 40 µA ∆ICC (Note 2) VCC - 2.1 - 4.5 to 5.5 - 100 360 - 450 - 490 µA NOTE: 2. For dual-supply systems theoretical worst case (VI = 2.4V, VCC = 5.5V) specification is 1.8mA. HCT Input Loading Table INPUT UNIT LOADS All 0.6 NOTE: Unit Load is ∆ICC limit specified in DC Electrical Specifications table, e.g. 360µA max at 25oC. Switching Specifications Input tr, tf = 6ns PARAMETER SYMBOL TEST CONDITIONS tPLH, tPHL CL = 50pF 25oC -40oC TO 85oC -55oC TO 125oC VCC (V) MIN TYP MAX MIN MAX MIN MAX UNITS 2 - - 100 - 125 - 150 ns 4.5 - - 20 - 25 - 30 ns 6 - - 17 - 21 - 26 ns 5 - 8 - - - - - ns HC TYPES Propagation Delay, Input to Output (Figure 1) Propagation Delay, Data Input to Output Y tPLH, tPHL CL = 15pF 4 CD54HC10, CD74HC10, CD54HCT10, CD74HCT10 Switching Specifications Input tr, tf = 6ns PARAMETER Transition Times (Figure 1) Input Capacitance Power Dissipation Capacitance (Notes 3, 4) (Continued) SYMBOL TEST CONDITIONS tTLH, tTHL CL = 50pF 25oC -40oC TO 85oC -55oC TO 125oC VCC (V) MIN TYP MAX MIN MAX MIN MAX UNITS 2 - - 75 - 95 - 110 ns 4.5 - - 15 - 19 - 22 ns 6 - - 13 - 16 - 19 ns CI - - - - 10 - 10 - 10 pF CPD - 5 - 24 - - - - - pF HCT TYPES Propagation Delay, Input to Output (Figure 2) tPLH, tPHL CL = 50pF 4.5 - - 24 - 30 - 36 ns Propagation Delay, Data Input to Output Y tPLH, tPHL CL = 15pF 5 - 9 - - - - - ns Transition Times (Figure 2) tTLH, tTHL CL = 50pF 4.5 - - 15 - 19 - 22 ns Input Capacitance Power Dissipation Capacitance (Notes 3, 4) CI - - - - 10 - 10 - 10 pF CPD - 5 - 28 - - - - - pF NOTES: 3. CPD is used to determine the dynamic power consumption, per gate. 4. PD = VCC2 fi (CPD + CL) where fi = input frequency, CL = output load capacitance, VCC = supply voltage. Test Circuits and Waveforms tr = 6ns tf = 6ns 90% 50% 10% INPUT GND tTLH GND tTHL 90% 50% 10% INVERTING OUTPUT 3V 2.7V 1.3V 0.3V INPUT tTHL tPHL tf = 6ns tr = 6ns VCC tTLH 90% 1.3V 10% INVERTING OUTPUT tPHL tPLH FIGURE 5. HC AND HCU TRANSITION TIMES AND PROPAGATION DELAY TIMES, COMBINATION LOGIC tPLH FIGURE 6. HCT TRANSITION TIMES AND PROPAGATION DELAY TIMES, COMBINATION LOGIC 5 PACKAGE OPTION ADDENDUM www.ti.com 28-Feb-2005 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty 5962-8984301CA ACTIVE CDIP J 14 1 None Call TI Level-NC-NC-NC CD54HC10F ACTIVE CDIP J 14 1 None Call TI Level-NC-NC-NC Lead/Ball Finish MSL Peak Temp (3) CD54HC10F3A ACTIVE CDIP J 14 1 None Call TI Level-NC-NC-NC CD54HCT10F3A ACTIVE CDIP J 14 1 None Call TI Level-NC-NC-NC CD74HC10E ACTIVE PDIP N 14 25 Pb-Free (RoHS) CU NIPDAU Level-NC-NC-NC CD74HC10M ACTIVE SOIC D 14 50 Pb-Free (RoHS) CU NIPDAU Level-2-260C-1 YEAR/ Level-1-235C-UNLIM CD74HC10M96 ACTIVE SOIC D 14 2500 Pb-Free (RoHS) CU NIPDAU Level-2-260C-1 YEAR/ Level-1-235C-UNLIM CD74HC10MT ACTIVE SOIC D 14 250 Pb-Free (RoHS) CU NIPDAU Level-2-260C-1 YEAR/ Level-1-235C-UNLIM CD74HCT10E ACTIVE PDIP N 14 25 Pb-Free (RoHS) CU NIPDAU Level-NC-NC-NC CD74HCT10M ACTIVE SOIC D 14 50 Pb-Free (RoHS) CU NIPDAU Level-2-260C-1 YEAR/ Level-1-235C-UNLIM CD74HCT10M96 ACTIVE SOIC D 14 2500 Pb-Free (RoHS) CU NIPDAU Level-2-260C-1 YEAR/ Level-1-235C-UNLIM CD74HCT10MT ACTIVE SOIC D 14 250 Pb-Free (RoHS) CU NIPDAU Level-2-260C-1 YEAR/ Level-1-235C-UNLIM (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - May not be currently available - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. None: Not yet available Lead (Pb-Free). Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Green (RoHS & no Sb/Br): TI defines "Green" to mean "Pb-Free" and in addition, uses package materials that do not contain halogens, including bromine (Br) or antimony (Sb) above 0.1% of total product weight. (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDECindustry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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