ICE10N73 Product Summary N-Channel Enhancement Mode MOSFET ID TA = 25°C 10A Max V(BR)DSS rDS(ON) ID = 250uA 730V Min VGS = 10V 0.25Ω Typ Qg VDS = 480V 82nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance D G TO-220 Optimized Design For High Performance Power Systems S Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Symbol ID ID, pulse Parameter Continous Drain Current Value Unit Conditions 10 A TC = 25°C Pulsed Drain Current 35 A TC = 25°C EAS Avalanche Energy, Single Pulse 280 mJ ID = 7.5A IAR Avalanche Current, Repetitive 7.5 A Limited by Tjmax MOSFET dv/dt Ruggedness 50 V/ns dv/dt VGS Gate Source Voltage Ptot Power Dissipation Tj, Tstg ±20 ±30 Operating and Storage Temperature Parameter Static AC (f>Hz) 208 W -55 to +150 °C 60 Ncm M 3 & 3.5 screws Unit Conditions Mounting Torque Symbol V VDS = 480V, ID = 10A, Tj = 125°C Values Min Typ Max TC = 25°C Thermal Characteristics RthJC Thermal Resistance, Junction to Case - - 0.6 RthJA Thermal Resistance, Junction to Ambient - - 62 Tsold Soldering Temperature, Wave Soldering Only Allowed At Leads - - 260 °C/W °C Leaded 1.6mm (0.063in.) from Case for 10s Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified Static Characteristics V(BR)DSS Drain to Source Breakdown Voltage 730 760 - VGS(th) Gate Threshold Voltage 2.5 3 3.5 - 0.5 5 - 20 - - - 100 - 0.25 0.35 - 0.7 - - 4 - IDSS IGSS RDS(on) RGS Zero Gate Voltage Drain Current Gate Source Leakage Current Drain to Source On-State Resistance Gate Resistance V µA nA Ω Ω VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 730V, VGS = 0V, Tj = 25°C VDS = 730V, VGS = 0V, Tj = 150°C VGS = ±20v, VDS = 0V VGS = 10V, ID = 5A, Tj = 25°C VGS = 10V, ID = 5A, Tj = 150°C f = 1 MHz, open drain Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected] 1 ICE10N73 Symbol Parameter Values Min Typ Max Unit Conditions Dynamic Characteristics Ciss Input Capacitance - 2650 - Coss Output Capacitance - 943 - Crss Reverse Transfer Capacitance - 8 - gfs Transconductance - 20 - td(on) Turn-on Delay Time - 10 - Tr Rise Time - 5 - td(off ) Turn-off Delay Time - 67 - tf Fall Time - 4.5 - pF VGS = 0V, VDS = 25V, f = 1 MHz S VDS = >2*ID* RDS, ID = 5A nS VDS = 380V, VGS = 10V, ID = 10A, RG = 4Ω (External) Gate Charge Characteristics Qgs Gate to Source Charge - 16 - Qgd Gate to Drain Charge - 30 - Qg Gate Charge Total - 82 - Vplateau Gate Plateau Voltage - 5 - V Diode Forward Voltage - 1.0 1.2 V trr Reverse Recovery Time - 423 - ns Qrr Reverse Recovery Charge - 8 - µC Irm Peak Reverse Recovery Current - 34 - A nC VDS = 480V, ID = 10A, VGS = 10V Reverse Diode VSD VGS = 0V, IS = IF VRR = 480V, IS = IF, diF/dt = 100 A/µS Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected] 2 ICE10N73 Transfer Characterstics Output Characteristics 35 35 VGS = 10V to 7V 6V 30 25 ID - Drain Current (A) ID - Drain Current (A) 30 20 15 5V 10 5 25 20 15 10 TJ = 150°C 5 0 0 10 5 15 0 20 VDS - Drain to Source Voltage (V) 25°C 0 2 4.0 450 3.5 400 RDS(on) - On State Resistance (Normalized) RDS(on) - On State Resistance (mΩ) 500 350 VGS = 10V 250 200 150 100 50 0 6 8 10 On Resistance vs Junction Temperature On State Resistance vs Drain Current 300 4 VGS - Gate to Source Voltage (V) VGS = 10V ID = 5A 3.0 2.5 2.0 1.5 1.0 0.5 0 5 10 15 20 25 30 0.0 35 ID - Drain Current (A) -50 -25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 Gate Charge 10 VGS - Gate to Source Voltage (V) 9 8 VDS = 480V ID = 10A 7 6 5 4 3 2 1 0 0 20 40 60 Qg - Total Gate Charge (nC) 80 100 Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected] 3 ICE10N73 Gate Threshold Voltage vs. Junction Temperature 1.3 10000 1.2 1.1 C - Capacitance (pF) VGS(th) - Gate Threshold Voltage (Normalized) Capacitance 100000 1.4 ID = 250µA 1.0 0.9 0.8 0.7 Ciss 1000 Coss 100 10 0.6 Crss 0.5 0.4 -50 1 -25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 0 150 100 1.1 10 ID = 1mA 1.0 0.9 -25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 300 400 500 600 Maximum Rate Forward Biased Safe Operating Area 100 ID - Drain Current (A) V(BR)DSS - Drain to Source Breakdown Voltage (Normalized) Drain to Source Breakdown Voltage vs. Junction Temperature 1.2 0.8 -50 200 VDS- Drain to Source Voltage (V) 10us 100us 1ms 1 DC 0.1 RDS (ON) Limit Package Limit Thermal Limit 0.01 150 Single Pulse Tc = 25°C T = 150°C VGS = 10V 1 10 100 VDS- Drain to Source Voltage (V) 1000 Transient Thermal Response - Junction to Case r(t) - Transit Thermal Resistance (Normalized) 1.00 0.5 0.2 0.10 0.1 0.05 0.02 0.01 Notes: PDM Single Pulse t1 t2 Duty Cycle, D = 0.00 1.0E-06 1.0E-05 1.0E-04 1.0E-03 t1 t2 1.0E-02 1.0E-01 1.0E-00 t - Time (seconds) Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected] 4