ON BUV21 Switchmode series npn silicon power transistor Datasheet

BUV21
SWITCHMODEt Series
NPN Silicon Power
Transistor
This device is designed for high speed, high current, high power
applications.
Features
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40 AMPERES
NPN SILICON POWER
METAL TRANSISTOR
200 VOLTS − 250 WATTS
• High DC Current Gain:
hFE min = 20 at IC = 12 A
• Low VCE(sat), VCE(sat)
max = 0.6 V at IC = 8 A
• Very Fast Switching Times:
TF max = 0.4 ms at IC = 25 A
• Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO(SUS)
200
Vdc
Collector−Base Voltage
VCBO
250
Vdc
Emitter−Base Voltage
VEBO
7
Vdc
Collector−Emitter Voltage (VBE = −1.5 V)
VCEX
250
Vdc
Collector−Emitter Voltage (RBE = 100 W)
VCER
240
Vdc
Collector−Current − Continuous
− Peak (PW v 10 ms)
IC
ICM
40
50
Adc
Apk
Base−Current Continuous
IB
8
Adc
Total Device Dissipation @ TC = 25_C
PD
250
W
TJ, Tstg
−65 to 200
_C
Collector−Emitter Voltage
Operating and Storage Junction
Temperature Range
TO−204AE (TO−3)
CASE 197A
MARKING DIAGRAM
BUV21G
AYWW
MEX
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Symbol
Max
Unit
qJC
0.7
_C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
BUV21
G
A
Y
WW
MEX
= Device Code
= Pb−Free Package
= Assembly Location
= Year
= Work Week
= Country of Origin
ORDERING INFORMATION
Device
BUV21
BUV21G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 10
1
Package
Shipping
TO−204
100 Units / Tray
TO−204
(Pb−Free)
100 Units / Tray
Publication Order Number:
BUV21/D
BUV21
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ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
VCEO(sus)
200
Max
Unit
OFF CHARACTERISTICS (Note 1)
Collector−Emitter Sustaining Voltage
(IC = 200 mA, IB = 0, L = 25 mH)
Collector Cutoff Current at Reverse Bias:
(VCE = 250 V, VBE = −1.5 V)(TC = 25_C unless otherwise noted)
(VCE = 250 V, VBE = −1.5 V, TC = 125_C)
ICEX
Collector−Emitter Cutoff Current
(VCE = 160 V)
ICEO
Emitter−Base Reverse Voltage
(IE = 50 mA)
VEBO
Emitter−Cutoff Current
(VEB = 5 V)
IEBO
Vdc
mAdc
3.0
12.0
3.0
7
mAdc
V
1.0
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
(VCE = 20 V, t = 1 s)
(VCE = 140 V, t = 1 s)
IS/b
Adc
12
0.15
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 12 A, VCE = 2 V)
(IC = 25 A, VCE = 4 V)
hFE
20
10
Collector−Emitter Saturation Voltage
(IC = 12 A, IB = 1.2 A)
(IC = 25 A, IB = 3 A)
VCE(sat)
Base−Emitter Saturation Voltage
(IC = 25 A, IB = 3 A)
VBE(sat)
60
Vdc
0.6
1.5
1.5
Vdc
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product
(VCE = 15 V, IC = 2 A, f = 4 MHz)
fT
8.0
MHz
SWITCHING CHARACTERISTICS (Resistive Load)
Turn-on Time
(IC = 25 A, IB1 = IB2 = 3 A,
VCC = 100 V, RC = 4 W)
Storage Time
Fall Time
ton
1.0
ts
1.8
tf
0.4
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
1.0
DERATING FACTOR
0.8
0.6
0.4
0.2
0
40
80
120
TC, TEMPERATURE (°C)
Figure 1. Power Derating
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2
160
200
ms
BUV21
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on TC = 25_C, TJ(pk) is
variable depending on power level. Second breakdown
limitations do not derate the same as thermal limitations.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
IC, COLLECTOR CURRENT (A)
40
10
1
0.1
10
100 200
VCE, COLLECTOR−EMITTER VOLTAGE (V)
1
Figure 2. Active Region Safe Operating Area
2.0
50
IC/IB = 8
VCE = 5 V
V, VOLTAGE (V)
1.6
40
1.2
30
VBE
0.8
20
0.4
10
VCE
0
1
0
100
10
IC, COLLECTOR CURRENT (A)
1
IC, COLLECTOR CURRENT (A)
Figure 3. “On” Voltages
Figure 4. DC Current Gain
VCE = 100 V
IC/IB1 = 8
IB1 = IB2
3.0
2.0
t, TIME (s)
μ
10
VCC
RC
1.0
IB2
tS
0.4
0.3
0.2
IB1
ton
RB
tF
0
5
10
15
IC, COLLECTOR CURRENT (A)
10,000 mF
20
VCC = 100 V
RC = 4 W
RB = 2.2 W
RC − RB: Non inductive resistances
25
Figure 5. Resistive Switching Performance
Figure 6. Switching Times Test Circuit
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3
BUV21
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 197A−05
ISSUE K
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
−T−
E
D
U
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
K
2 PL
0.30 (0.012)
V
SEATING
PLANE
T Q
M
M
Y
M
−Y−
L
2
H
G
B
M
T Y
INCHES
MIN
MAX
1.530 REF
0.990 1.050
0.250 0.335
0.057 0.063
0.060 0.070
0.430 BSC
0.215 BSC
0.440 0.480
0.665 BSC
0.760 0.830
0.151 0.165
1.187 BSC
0.131 0.188
MILLIMETERS
MIN MAX
38.86 REF
25.15 26.67
6.35
8.51
1.45
1.60
1.53
1.77
10.92 BSC
5.46 BSC
11.18 12.19
16.89 BSC
19.31 21.08
3.84
4.19
30.15 BSC
3.33
4.77
1
−Q−
0.25 (0.010)
M
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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BUV21/D
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