Vishay J174 P-channel jfet Datasheet

J/SST174/175/176/177 Series
Vishay Siliconix
P-Channel JFETs
J174
J175
J176
J177
SST174
SST175
SST176
SST177
PRODUCT SUMMARY
Part Number
VGS(off) (V)
rDS(on) Max (W)
ID(off) Typ (pA)
tON Typ (ns)
J/SST174
J/SST175
5 to 10
85
–10
25
3 to 6
125
–10
25
J/SST176
1 to 4
250
–10
25
J/SST177
0.8 to 2.25
300
–10
25
FEATURES
BENEFITS
APPLICATIONS
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
Low On-Resistance: J174 <85 W
Fast Switching—tON: 25 ns
Low Leakage: –10 pA
Low Capacitance: 5 pF
Low Insertion Loss
Low Error Voltage
High-Speed Analog Circuit Performance
Negligible “Off-Error,” Excellent Accuracy
Good Frequency Response
Eliminates Additional Buffering
Analog Switches
Choppers
Sample-and-Hold
Normally “On” Switches
Current Limiters
DESCRIPTION
The J/SST174 series consists of p-channel analog switches
designed to provide low on-resistance and fast switching. This
series simplifies series-shunt switching applications when
combined with the Siliconix J/SST111 series.
The TO-226AA (TO-92) plastic package provides a low-cost
option, while the TO-236 (SOT-23) package provides
surface-mount capability. Both the J and SST series are
available in tape-and-reel for automated assembly (see
Packaging Information).
TO-226AA
(TO-92)
D
TO-236
(SOT-23)
1
D
G
3
2
S
S
1
G
2
3
Top View
Top View
J174
J175
J176
J177
SST174 (S4)*
SST175 (S5)*
SST176 (S6)*
SST177 (S7)*
*Marking Code for TO-236
For applications information see AN104.
Document Number: 70257
S-04030—Rev. E, 04-Jun-01
www.vishay.com
9-1
J/SST174/175/176/177 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS FOR J/SST174 AND J/SST175 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
J/SST174
Parameter
Test Conditions
Typa
Min
V(BR)GSS
IG = 1 mA , VDS = 0 V
45
30
VGS(off)
VDS = –15 V, ID = –10 nA
IDSS
VDS = –15 V, VGS = 0 V
Symbol
Max
J/SST175
Min
Max
Unit
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentb
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
IGSS
IG
ID(off)
VGS = 20 V, VDS = 0 V
TA = 125_C
0.01
VDG = –15 V, ID = –1 mA
0.01
–0.01
TA = 125_C
rDS(on)
VGS = 0 V, VDS = –0.1 V
Gate-Source Forward Voltage
VGS(F)
IG = –1 mA , VDS = 0 V
10
3
6
–20
–135
–7
–70
1
1
–1
–1
85
125
V
mA
5
VDS = –15 V, VGS = 10 V
Drain-Source On-Resistance
30
5
nA
–5
W
–0.7
V
4.5
mS
20
mS
Dynamic
Common-Source
Forward Transconductance
gfs
Common-Source
Output Conductance
gos
Drain-Source On-Resistance
VDS = –15 V, ID = –1 mA
f = 1 kHz
rds(on)
VGS = 0 V, ID = 0 mA , f = 1 kHz
Common-Source Input Capacitance
Ciss
VDS = 0 V, VGS = 0 V, f = 1 MHz
20
85
Common-Source
Reverse Transfer Capacitance
Crss
VDS = 0 V, VGS = 10 V
f = 1 MHz
5
Equivalent Input Noise Voltage
en
VDG = –10 V, ID = –1 mA
f = 1 kHz
20
125
W
pF
nV⁄
√Hz
Switching
Turn-On Time
td(on)
tr
Turn-Off Time
td(off)
10
VGS(L) = 0 V, VGS(H) = 10 V
See Switching Circuit
tf
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
www.vishay.com
9-2
15
ns
10
20
PSCIA
Document Number: 70257
S-04030—Rev. E, 04-Jun-01
J/SST174/175/176/177 Series
Vishay Siliconix
SPECIFICATIONS FOR J/SST176 AND J/SST177 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
J/SST176
Parameter
Test Conditions
Typa
Min
V(BR)GSS
IG = 1 mA , VDS = 0 V
45
30
VGS(off)
VDS = –15 V, ID = –10 nA
IDSS
VDS = –15 V, VGS = 0 V
Symbol
J/SST177
Max
Min
Max
1
4
0.8
2.25
–2
–35
–1.5
–20
Unit
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentb
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
IGSS
IG
ID(off)
VGS = 20 V, VDS = 0 V
TA = 125_C
0.01
1
1
–1
–1
250
300
V
mA
5
VDG = –15 V, ID = –1 mA
0.01
VDS = –15 V, VGS = 10 V
–0.01
TA = 125_C
30
nA
–5
W
Drain-Source On-Resistance
rDS(on)
VGS = 0 V, VDS = –0.1 V
Gate-Source Forward Voltage
VGS(F)
IG = –1 mA , VDS = 0 V
–0.7
V
gfs
VDS = –15 V, ID = –1 mA
f = 1 kHz
4.5
mS
Dynamic
Common-Source
Forward Transconductance
Common-Source Output Conductance
Drain-Source On-Resistance
Common-Source Input Capacitance
gos
rds(on)
VGS = 0 V, ID = 0 mA , f = 1 kHz
mS
20
250
Ciss
VDS = 0 V, VGS = 0 V, f = 1 MHz
20
Common-Source
Reverse Transfer Capacitance
Crss
VDS = 0 V, VGS = 10 V
f = 1 MHz
5
Equivalent Input Noise Voltage
en
VDG = –10 V, ID = –1 mA
f = 1 kHz
20
300
W
pF
nV⁄
√Hz
Switching
td(on)
Turn-On Time
Turn-Off Time
tr
td(off)
10
VGS(L) = 0 V, VGS(H) = 10 V
See Switching Circuit
tf
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
Document Number: 70257
S-04030—Rev. E, 04-Jun-01
15
ns
10
20
PSCIA
www.vishay.com
9-3
J/SST174/175/176/177 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
–100
18
250
gfs and gos @ VDS = –15 V
VGS = 0 V, f = 1 kHz
–80
rDS
–60
120
–40
80
40
–20
rDS @ ID = –1 mA, VGS = 0 V
IDSS @ VDS = –15 V, VGS = 0 V
0
0
0
2
4
6
8
15
200
gfs
12
9
100
6
50
3
10
0
2
VGS(off) – Gate-Source Cutoff Voltage (V)
Output Characteristics
rDS(on) – Drain-Source On-Resistance ( Ω )
VGS = 0 V
I D – Drain Current (mA)
0.5 V
–15
1.0 V
–10
1.5 V
–5
2.0 V
0
TA = 25_C
200
VGS(off) = 1.5 V
150
3V
100
5V
50
0
–4
0
–8
–12
–16
–20
–1
–10
VDS – Drain-Source Voltage (V)
–100
ID – Drain Current (mA)
Output Characteristics
On-Resistance vs. Temperature
–2
300
ID = –1 mA
rDS changes X 0.7%/_C
VGS = 0 V
rDS(on) – Drain-Source On-Resistance ( Ω )
1.5 V
0.5 V
–1.6
I D – Drain Current (mA)
0
10
8
On-Resistance vs. Drain Current
250
–20
1.0 V
–1.2
2.0 V
–0.8
–0.4
VGS(off) = 3 V
0
0
–0.1
–0.2
–0.3
–0.4
VDS – Drain-Source Voltage (V)
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9-4
6
4
VGS(off) – Gate-Source Cutoff Voltage (V)
–25
VGS(off) = 3 V
150
gos
g os – Output Conductance ( mS)
160
gfs – Forward Transconductance (mS)
IDSS
IDSS – Saturation Drain Current (mA)
rDS(on) – Drain-Source On-Resistance ( Ω )
200
–0.5
240
180
VGS(off) = 1.5 V
3V
120
5V
60
0
–55
–35
–15
5
25
45
65
85
105
125
TA – Temperature (_C)
Document Number: 70257
S-04030—Rev. E, 04-Jun-01
J/SST174/175/176/177 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Turn-On Switching
Turn-Off Switching
20
50
tr approximately independent of ID
VDD = –10 V, RG = 220 W
VGS(H) = 10 V, VGS(L) = 0 V
tf VGS(off) = 1.5 V
40
16
30
tON @ ID = –5 mA
Switching Time (ns)
Switching Time (ns)
5V
tON @ ID = –10 mA
20
10
12
td(off) VGS(off) = 1.5 V
8
5V
4
tr @ ID = –5 mA
VDD = –10 V, VGS(H) = 10 V, VGS(L) = 0 V
0
0
0
1
2
3
4
5
0
–3
–6
VGS(off) – Gate-Source Cutoff Voltage (V)
–9
Capacitance vs. Gate-Source Voltage
VDS = 0 V
f = 1 MHz
ID = –1 mA
10 nA
24
–10 mA
I G – Gate Leakage
Capacitance (pF)
–15
Gate Leakage Current
100 nA
30
18
Ciss
12
Crss
6
TA = 125_C
1 nA
IGSS @ 125_C
100 pA
–10 mA
10 pA
TA = 25_C
1 pA
–1 mA
IGSS @ 25_C
0.1 pA
0
0
4
8
12
16
20
0
VGS – Gate-Source Voltage (V)
–10
–30
–20
–40
–50
VDG – Drain-Gate Voltage (V)
Transfer Characteristics
Noise Voltage vs. Frequency
–40
100
VGS(off) = 3 V
VDS = –15 V
ID = –0.1 mA
Hz
–32
–24
TA = –55_C
en – Noise Voltage nV /
I D – Drain Current (mA)
–12
ID – Drain Current (mA)
25_C
–16
–8
125_C
0
–1 mA
10
VDS = –10 V
1
0
1
2
3
VGS – Gate-Source Voltage (V)
Document Number: 70257
S-04030—Rev. E, 04-Jun-01
4
5
10
100
1k
10 k
100 k
f – Frequency (Hz)
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9-5
J/SST174/175/176/177 Series
Vishay Siliconix
SWITCHING TIME TEST CIRCUIT
VDD
VGG
174
175
176
177
–10 V
–6 V
–6 V
–6 V
VGG
20 V
12 V
8V
5V
RL*
560 W
750 W
1800 W
5600 W
RG*
100 W
220 W
390 W
390 W
ID(on)
–15 mA
–7 mA
–3 mA
–1 mA
VDD
RL
1.2 kW
VGS(H)
VGS(L)
0.1 mF
RG
7.5 kW
*Non-inductive
INPUT PULSE
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
SAMPLING SCOPE
51 W
1.2 kW
Rise Time 0.4 ns
Input Resistance 10 MW
Input Capacitance 1.5 pF
Sampling
Scope
51 W
51 W
See Typical Characteristics curves for changes.
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9-6
Document Number: 70257
S-04030—Rev. E, 04-Jun-01
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