MRW54001 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .200 4L PILL DESCRIPTION: The ASI MRW54001 is Designed for Classs "A" and "AB" Amplifier Applications Up to 2.0 GHz. FEATURES: • Omnigold™ Metalization System • Implanted ballast resistors • Common-Emitter MAXIMUM RATINGS I 160 mA VCEO 22 V VCES 50 V TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 40 °C/W 1 = Collector UNIT mm inches CHARACTERISTICS b 1.63 1.38 0.065 0.055 B1 0.81 0.71 0.032 0.028 3 = Base c 0.16 0.10 0.006 0.004 D 3.38 3.08 0.133 0.121 D1 5.28 5.12 0.208 0.202 D2 5.23 5.13 0.206 0.202 H 19 17 0.75 0.67 NONE TC = 25 °C SYMBOL 2 & 4 = Emitter TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 10 mA 22 V BVCES IC = 10 mA 50 V BVCBO IC = 1.0 mA 45 V BVEBO IE = 250 µA 3.5 V ICBO VCB = 28 V hFE VCE = 5.0 V IC = 100 mA 20 ft VCE = 20 V IE = 120 mA 4.0 Cob VCB = 28 V GPE LG VCE = 20 V f = 2.0 GHz Pout = 0.5 W µA 120 --- 4.5 f = 1.0 MHz ICQ = 120 mA 250 GHz 3.5 10 -0.2/+1.0 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. pF dB REV. A 1/1