MITSUBISHI IGBT MODULES CM150DU-12H HIGH POWER SWITCHING USE INSULATED TYPE TC Measured Point A B E F U H G J C2E1 E2 C1 G2 G2 CM D C 2 - Mounting Holes (6.5 Dia.) V G1 E1 K Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. L M 3-M5 Nuts O O P N Q TAB#110 t=0.5 P S R T E2 G2 C2E1 Features: u Low Drive Power u Low VCE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking C1 E2 E1 G1 Outline Drawing and Circuit Diagram Dimensions A Inches 3.7 Millimeters 94.0 80.0±0.25 Dimensions Inches Millimeters M 0.47 12.0 N 0.53 13.5 B 3.15±0.01 C 1.89 48.0 O 0.1 2.5 D 0.94 24.0 P 0.63 16.0 E 0.28 7.0 Q 0.98 25.0 F 0.67 17.0 R G 0.91 23.0 S 0.3 7.5 H 0.91 23.0 T 0.83 21.2 J 0.43 11.0 U 0.16 4.0 K 0.71 18.0 V 0.51 13.0 L 0.16 4.0 1.18 +0.04/-0.02 30.0 +1.0/-0.5 Applications: u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM150DU-12H is a 600V (VCES), 150 Ampere Dual IGBT Module. Type Current Rating Amperes VCES Volts (x 50) CM 150 12 Sep.1998 MITSUBISHI IGBT MODULES CM150DU-12H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Symbol CM150DU-12H Units Tj -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 150 Amperes ICM 300* Amperes IE 150 Amperes Peak Emitter Current** IEM 300* Amperes Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Pc 600 Watts Storage Temperature Collector Current (Tc = 25°C) Peak Collector Current Emitter Current** (Tc = 25°C) Mounting Torque, M5 Main Terminal – 2.5~3.5 N·m Mounting Torque, M6 Mounting – 3.5~4.5 N·m – 310 Grams Viso 2500 Vrms Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA Gate Leakage Voltage IGES VGE = VGES, VCE = 0V – – 0.5 µA 4.5 6 7.5 Volts – 2.4 3.0 Volts 2.6 – Volts – nC Gate-Emitter Threshold Voltage VGE(th) IC = 15mA, VCE = 10V Collector-Emitter Saturation Voltage VCE(sat) IC = 150A, VGE = 15V, Tj = 25°C IC = 150A, VGE = 15V, Tj = 125°C – Total Gate Charge QG VCC = 300V, IC = 150A, VGE = 15V – 300 Emitter-Collector Voltage** VEC IE = 150A, VGE = 0V – – Min. Typ. Max. Units – – 13.2 nF – – 7.2 nF – – 2 nF 2.6 Volts **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) VCC = 300V, IC = 150A, – – 100 ns Load Rise Time tr VGE1 = VGE2 = 15V, – – 350 ns Switch Turn-off Delay Time Times Fall Time VCE = 10V, VGE = 0V td(off) RG = 4.2Ω, Resistive – – 300 ns tf Load Switching Operation – – 300 ns Diode Reverse Recovery Time** trr IE = 150A, diE/dt = -300A/µs – – 160 ns Diode Reverse Recovery Charge** Qrr IE = 150A, diE/dt = -300A/µs – 0.36 – µC **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module – – 0.21 °C/W Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module – – 0.47 °C/W Rth(c-f) Per Module, Thermal Grease Applied – 0.035 – °C/W Contact Thermal Resistance Test Conditions Min. Typ. Max. Units Sep.1998 MITSUBISHI IGBT MODULES CM150DU-12H HIGH POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) 300 14 13 VGE = 20V 240 15 12 180 11 120 10 60 9 5 VCE = 10V Tj = 25°C Tj = 125°C 240 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) 180 120 60 8 0 0 0 2 4 6 8 3 2 1 4 8 12 16 0 20 80 160 240 320 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 102 IC = 300A IC = 150A 4 2 CAPACITANCE, Cies, Coes, Cres, (nF) 8 6 VGE = 0V Tj = 25°C Tj = 25°C EMITTER CURRENT, IE, (AMPERES) 102 101 Cies Coes 100 Cres IC = 60A 101 0.6 0 0 4 8 12 16 20 1.4 1.8 2.2 2.6 3.0 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY TIME, trr, (ns) VCC = 300V VGE = ±15V RG = 4.2 Ω Tj = 125°C tf td(off) td(on) 101 100 101 tr 102 COLLECTOR CURRENT, IC, (AMPERES) 103 di/dt = -300A/µsec Tj = 25°C trr 101 Irr 101 101 102 EMITTER CURRENT, IE, (AMPERES) 101 102 GATE CHARGE, VGE 102 102 100 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 104 102 10-1 10-1 3.4 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) 103 1.0 100 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 4 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 10 SWITCHING TIME, (ns) VGE = 15V Tj = 25°C Tj = 125°C 0 0 10 REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 300 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) IC = 150A 16 VCC = 200V VCC = 300V 12 8 4 0 0 100 200 300 400 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM150DU-12H TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.21°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) HIGH POWER SWITCHING USE INSULATED TYPE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.47°C/W 10-1 10-1 10-2 10-2 10-3 10-5 10-4 10-3 10-3 TIME, (s) Sep.1998