DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D049 BAP65-03 Silicon PIN diode Product specification Supersedes data of 2001 May 07 2001 May 11 Philips Semiconductors Product specification Silicon PIN diode BAP65-03 FEATURES PINNING • High voltage, current controlled PIN DESCRIPTION • RF resistor for RF switches 1 cathode • Low diode capacitance 2 anode • Low diode forward resistance (low loss) • Very low series inductance. handbook, halfpage APPLICATIONS 1 2 • RF attenuators and switches • Bandswitch for TV tuners • Series diode for mobile communication transmit/receive switch. MAM406 Marking code: D3. DESCRIPTION Fig.1 Simplified outline (SOD323) and symbol. Planar PIN diode in a SOD323 small SMD plastic package. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage − 30 V IF continuous forward current − 100 mA Ptot total power dissipation − 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C 2001 May 11 Ts ≤ 90 °C 2 Philips Semiconductors Product specification Silicon PIN diode BAP65-03 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VF forward voltage IF = 50 mA 0.9 1.1 V IR reverse leakage current VR = 20 V − 20 nA Cd diode capacitance VR = 0 V; f = 1 MHz 0.65 − pF rD |s21|2 |s21|2 |s21|2 |s21|2 |s21|2 diode forward resistance isolation insertion loss insertion loss insertion loss insertion loss VR = 1 V; f = 1 MHz 0.55 0.9 pF VR = 3 V; f = 1 MHz 0.5 0.8 pF VR = 20 V; f = 1 MHz 0.375 − pF IF = 1 mA; f = 100 MHz 1 − Ω IF = 5 mA; f = 100 MHz; note 1 0.65 0.95 Ω IF = 10 mA; f = 100 MHz; note 1 0.56 0.9 Ω IF = 100 mA; f = 100 MHz 0.35 − Ω VR = 0; f = 900 MHz 10.2 − dB VR = 0; f = 1800 MHz 5.8 − dB VR = 0; f = 2450 MHz 4.1 − dB IF = 1 mA; f = 900 MHz 0.1 − dB IF = 1 mA; f = 1800 MHz 0.14 − dB IF = 1 mA; f = 2450 MHz 0.18 − dB IF = 5 mA; f = 900 MHz 0.06 − dB IF = 5 mA; f = 1800 MHz 0.1 − dB IF = 5 mA; f = 2450 MHz 0.14 − dB IF = 10 mA; f = 900 MHz 0.06 − dB IF = 10 mA; f = 1800 MHz 0.1 − dB IF = 10 mA; f = 2450 MHz 0.13 − dB IF = 100 mA; f = 900 MHz 0.05 − dB IF = 100 mA; f = 1800 MHz 0.1 − dB IF = 100 mA; f = 2450 MHz 0.14 − dB τL charge carrier life time when switched from IF = 10 mA to 0.17 IR = 6 mA; RL = 100 Ω; measured at IR = 3 mA − µs LS series inductance IF = 100 mA; f = 100 MHz − nH 1.5 Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL Rth j-s 2001 May 11 PARAMETER thermal resistance from junction to soldering point 3 VALUE UNIT 120 K/W Philips Semiconductors Product specification Silicon PIN diode BAP65-03 GRAPHICAL DATA MLD503 10 MLD504 1000 Cd handbook, halfpage handbook, halfpage rD (Ω) (fF) 800 600 1 400 200 10−1 10−1 10 1 IF (mA) 0 102 12 16 20 VR (V) f = 100 MHz; Tj = 25 °C. f = 1 MHz; Tj = 25 °C. Fig.2 Fig.3 Forward resistance as a function of forward current; typical values. MLD505 0 8 4 0 Diode capacitance as a function of reverse voltage; typical values. MLD506 0 handbook, halfpage handbook, halfpage s 2 21 (dB) s21 2 (5) (dB) −0.1 −10 (1) −0.2 (2) (3) (4) −20 −0.3 −30 −0.4 −0.5 0 1000 (1) IF = 0.5 mA. (2) IF = 1 mA. (3) IF = 5 mA. 2000 f (MHz) −40 3000 2000 f (MHz) 3000 Diode zero biased and inserted in series with a 50 Ω stripline circuit. Tamb = 25 °C. Insertion loss (|s21|2) of the diode as a function of frequency; typical values. 2001 May 11 1000 (4) IF = 10 mA. (5) IF = 100 mA. Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network; Tamb = 25 °C. Fig.4 0 Fig.5 4 Isolation (|s21|2) of the diode as a function of frequency; typical values. Philips Semiconductors Product specification Silicon PIN diode BAP65-03 PACKAGE OUTLINE SOD323 Plastic surface mounted package; 2 leads Q A A1 c Lp v M A HE A D 1 E 2 bp (1) 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E HE Lp Q v mm 1.1 0.8 + 0.05 − 0.05 0.40 0.25 0.25 0.10 1.8 1.6 1.35 1.15 2.7 2.3 0.45 0.15 0.25 0.15 0.2 Note 1. The marking bar indicates the cathode. OUTLINE VERSION SOD323 2001 May 11 REFERENCES IEC JEDEC EIAJ SC-76 5 EUROPEAN PROJECTION ISSUE DATE 98-09-14 99-09-13 Philips Semiconductors Product specification Silicon PIN diode BAP65-03 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. 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