NXP BAP65-03 Silicon pin diode Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D049
BAP65-03
Silicon PIN diode
Product specification
Supersedes data of 2001 May 07
2001 May 11
Philips Semiconductors
Product specification
Silicon PIN diode
BAP65-03
FEATURES
PINNING
• High voltage, current controlled
PIN
DESCRIPTION
• RF resistor for RF switches
1
cathode
• Low diode capacitance
2
anode
• Low diode forward resistance (low loss)
• Very low series inductance.
handbook, halfpage
APPLICATIONS
1
2
• RF attenuators and switches
• Bandswitch for TV tuners
• Series diode for mobile communication transmit/receive
switch.
MAM406
Marking code: D3.
DESCRIPTION
Fig.1 Simplified outline (SOD323) and symbol.
Planar PIN diode in a SOD323 small SMD plastic package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
−
30
V
IF
continuous forward current
−
100
mA
Ptot
total power dissipation
−
500
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−65
+150
°C
2001 May 11
Ts ≤ 90 °C
2
Philips Semiconductors
Product specification
Silicon PIN diode
BAP65-03
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VF
forward voltage
IF = 50 mA
0.9
1.1
V
IR
reverse leakage current
VR = 20 V
−
20
nA
Cd
diode capacitance
VR = 0 V; f = 1 MHz
0.65
−
pF
rD
|s21|2
|s21|2
|s21|2
|s21|2
|s21|2
diode forward resistance
isolation
insertion loss
insertion loss
insertion loss
insertion loss
VR = 1 V; f = 1 MHz
0.55
0.9
pF
VR = 3 V; f = 1 MHz
0.5
0.8
pF
VR = 20 V; f = 1 MHz
0.375
−
pF
IF = 1 mA; f = 100 MHz
1
−
Ω
IF = 5 mA; f = 100 MHz; note 1
0.65
0.95
Ω
IF = 10 mA; f = 100 MHz; note 1
0.56
0.9
Ω
IF = 100 mA; f = 100 MHz
0.35
−
Ω
VR = 0; f = 900 MHz
10.2
−
dB
VR = 0; f = 1800 MHz
5.8
−
dB
VR = 0; f = 2450 MHz
4.1
−
dB
IF = 1 mA; f = 900 MHz
0.1
−
dB
IF = 1 mA; f = 1800 MHz
0.14
−
dB
IF = 1 mA; f = 2450 MHz
0.18
−
dB
IF = 5 mA; f = 900 MHz
0.06
−
dB
IF = 5 mA; f = 1800 MHz
0.1
−
dB
IF = 5 mA; f = 2450 MHz
0.14
−
dB
IF = 10 mA; f = 900 MHz
0.06
−
dB
IF = 10 mA; f = 1800 MHz
0.1
−
dB
IF = 10 mA; f = 2450 MHz
0.13
−
dB
IF = 100 mA; f = 900 MHz
0.05
−
dB
IF = 100 mA; f = 1800 MHz
0.1
−
dB
IF = 100 mA; f = 2450 MHz
0.14
−
dB
τL
charge carrier life time
when switched from IF = 10 mA to 0.17
IR = 6 mA; RL = 100 Ω;
measured at IR = 3 mA
−
µs
LS
series inductance
IF = 100 mA; f = 100 MHz
−
nH
1.5
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
2001 May 11
PARAMETER
thermal resistance from junction to soldering point
3
VALUE
UNIT
120
K/W
Philips Semiconductors
Product specification
Silicon PIN diode
BAP65-03
GRAPHICAL DATA
MLD503
10
MLD504
1000
Cd
handbook, halfpage
handbook, halfpage
rD
(Ω)
(fF)
800
600
1
400
200
10−1
10−1
10
1
IF (mA)
0
102
12
16
20
VR (V)
f = 100 MHz; Tj = 25 °C.
f = 1 MHz; Tj = 25 °C.
Fig.2
Fig.3
Forward resistance as a function of forward
current; typical values.
MLD505
0
8
4
0
Diode capacitance as a function of reverse
voltage; typical values.
MLD506
0
handbook, halfpage
handbook, halfpage
s 2
21
(dB)
s21 2
(5)
(dB)
−0.1
−10
(1)
−0.2
(2)
(3)
(4)
−20
−0.3
−30
−0.4
−0.5
0
1000
(1) IF = 0.5 mA.
(2) IF = 1 mA.
(3) IF = 5 mA.
2000
f (MHz)
−40
3000
2000
f (MHz)
3000
Diode zero biased and inserted in series with a 50 Ω stripline circuit.
Tamb = 25 °C.
Insertion loss (|s21|2) of the diode as a
function of frequency; typical values.
2001 May 11
1000
(4) IF = 10 mA.
(5) IF = 100 mA.
Diode inserted in series with a 50 Ω stripline circuit and biased
via the analyzer Tee network; Tamb = 25 °C.
Fig.4
0
Fig.5
4
Isolation (|s21|2) of the diode as a function of
frequency; typical values.
Philips Semiconductors
Product specification
Silicon PIN diode
BAP65-03
PACKAGE OUTLINE
SOD323
Plastic surface mounted package; 2 leads
Q
A
A1
c
Lp
v M A
HE
A
D
1
E
2
bp
(1)
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
HE
Lp
Q
v
mm
1.1
0.8
+ 0.05
− 0.05
0.40
0.25
0.25
0.10
1.8
1.6
1.35
1.15
2.7
2.3
0.45
0.15
0.25
0.15
0.2
Note
1. The marking bar indicates the cathode.
OUTLINE
VERSION
SOD323
2001 May 11
REFERENCES
IEC
JEDEC
EIAJ
SC-76
5
EUROPEAN
PROJECTION
ISSUE DATE
98-09-14
99-09-13
Philips Semiconductors
Product specification
Silicon PIN diode
BAP65-03
DATA SHEET STATUS
DATA SHEET STATUS(1)
PRODUCT
STATUS(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 May 11
6
Philips Semiconductors
Product specification
Silicon PIN diode
BAP65-03
NOTES
2001 May 11
7
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SCA 72
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613512/03/pp8
Date of release: 2001
May 11
Document order number:
9397 750 08365
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