MBRM110E Surface Mount Schottky Power Rectifier POWERMITE® Power Surface Mount Package The Schottky Powermite® employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop−reverse current tradeoff. The advanced packaging techniques provide for a highly efficient micro miniature, space saving surface mount Rectifier. With its unique heatsink design, the Powermite® has the same thermal performance as the SMA while being 50% smaller in footprint area, and delivering one of the lowest height profiles, < 1.1 mm in the industry. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC−DC and DC−DC converters, reverse battery protection, and “ORing” of multiple supply voltages and any other application where performance and size are critical. http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 10 VOLTS ANODE CATHODE POWERMITE CASE 457 PLASTIC Features • • • • • • Low IR Extends Battery Life Low Profile − Maximum Height of 1.1 mm Small Footprint − Footprint Area of 8.45 mm2 150°C Operating Junction Temperature Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink Pb−Free Packages are Available MARKING DIAGRAM M 1E1G Mechanical Characteristics: • • • • • Powermite® is JEDEC Registered as D0−216AA Case: Molded Epoxy Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 16.3 mg (Approximately) Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Maximum for 10 Seconds M 1E1 G = Date Code = Device Code = Pb−Free Package ORDERING INFORMATION Device MBRM110ET1 Package Shipping† POWERMITE 3000/Tape & Reel MBRM110ET1G POWERMITE 3000/Tape & Reel (Pb−Free) MBRM110ET3 POWERMITE 12000/Tape & Reel MBRM110ET3G POWERMITE 12000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 September, 2006 − Rev. 2 1 Publication Order Number: MBRM110E/D MBRM110E MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 10 V IO 1.0 A Non−Repetitive Peak Surge Current (Non−Repetitive peak surge current, halfwave, single phase, 60 Hz) IFSM 50 A Storage Temperature Tstg −55 to +150 °C TJ −55 to +150 °C dv/dt 10,000 V/ms Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TL = 100°C) Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25°C) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Rating Thermal Resistance, Junction−to−Lead (Anode) (Note 1) Thermal Resistance, Junction−to−Tab (Cathode) (Note 1) Thermal Resistance, Junction−to−Ambient (Note 1) Symbol Value Unit Rtjl Rtjtab Rtja 35 23 277 °C/W Value Unit 1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 8 and 9. ELECTRICAL CHARACTERISTICS Rating Symbol Maximum Instantaneous Forward Voltage (Note 2) (IF = 0.1 A) (IF = 1.0 A) (IF = 2.0 A) Maximum Instantaneous Reverse Current (Note 2) VF TJ = 25°C TJ = 100°C V VF 0.455 0.530 0.595 0.360 0.455 0.540 V IR TJ = 25°C TJ = 100°C mA 0.5 1.0 300 500 (VR = 5.0 V) (VR = 10 V) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) 2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%. 10 TJ = 150°C TJ = 25°C TJ = 100°C TJ = -40°C 1.0 0.1 0.2 0.4 0.6 0.8 10 TJ = 150°C TJ = 100°C 1.0 TJ = 25°C 0.1 0.2 0.4 0.6 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage http://onsemi.com 2 0.8 MBRM110E 100E-3 I R, MAXIMUM REVERSE CURRENT (AMPS) IR, REVERSE CURRENT (AMPS) 100E-3 10E-3 1E-3 TJ = 150°C 100E-6 10E-6 1E-6 100E-9 1E-3 TJ = 100°C 10E-6 TJ = 25°C 1E-6 100E-9 TJ = 25°C 10E-9 10E-9 2.5 5 7.5 FREQ = 20 kHz Ipk/Io = p Ipk/Io = 5 0.6 Ipk/Io = 10 0.4 Ipk/Io = 20 0.2 0 65 85 105 10 125 145 165 0.7 dc 0.6 Ipk/Io = p SQUARE WAVE 0.5 Ipk/Io = 5 0.4 Ipk/Io = 10 0.3 Ipk/Io = 20 0.2 0.1 0 0 0.4 0.2 0.6 0.8 1.0 1.2 1.4 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Figure 6. Forward Power Dissipation 1000 C, CAPACITANCE (pF) 45 7.5 Figure 4. Maximum Reverse Current SQUARE WAVE 0.8 5 Figure 3. Typical Reverse Current 1.4 1.0 2.5 VR, REVERSE VOLTAGE (VOLTS) dc 1.2 0 VR, REVERSE VOLTAGE (VOLTS) 1.8 1.6 10 PFO , AVERAGE POWER DISSIPATION (WATTS) 0 I O , AVERAGE FORWARD CURRENT (AMPS) TJ = 150°C 100E-6 TJ = 100°C 25 10E-3 TJ = 25°C 100 10 0 1 2 3 4 5 6 7 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance http://onsemi.com 3 8 9 10 1.6 R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) MBRM110E 1.0 50% 20% 0.1 10% 5.0% 0.01 2.0% 1.0% Rtjl(t) = Rtjl*r(t) 0.001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 T, TIME (s) R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 8. Thermal Response Junction to Lead 1.0 50% 20% 0.1 10% 5.0% 0.01 2.0% Rtjl(t) = Rtjl*r(t) 1.0% 0.001 0.00001 0.0001 0.001 0.01 0.1 1.0 T, TIME (s) Figure 9. Thermal Response Junction to Ambient http://onsemi.com 4 10 100 1,000 MBRM110E PACKAGE DIMENSIONS POWERMITE CASE 457−04 ISSUE D F 0.08 (0.003) C −A− J M T B S C S S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. TERM. 1 −B− DIM A B C D F H J K L R S K TERM. 2 R L J MILLIMETERS INCHES MIN MAX MIN MAX 1.75 2.05 0.069 0.081 1.75 2.18 0.069 0.086 0.85 1.15 0.033 0.045 0.40 0.69 0.016 0.027 0.70 1.00 0.028 0.039 -0.05 +0.10 -0.002 +0.004 0.10 0.25 0.004 0.010 3.60 3.90 0.142 0.154 0.50 0.80 0.020 0.031 1.20 1.50 0.047 0.059 0.50 REF 0.019 REF D H −T− 0.08 (0.003) M T B S C S SOLDERING FOOTPRINT* 0.635 0.025 2.67 0.105 0.762 0.030 2.54 0.100 1.27 0.050 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. POWERMITE is a registered trademark of and used under a license from Microsemi Corporation. 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