ES5ABF THRU ES5JBF SURFACE MOUNT SUPERFAST RECOVERY RECTIFIER Reverse Voltage - 50 to 600 Volts SMBF FEATURES Cathode Band Top View 0.146(3.70) 0.138(3.50) Forward Current - 5.0 Amperes For surface mounted applications Low profile package Glass Passivated Chip Junction Superfast reverse recovery time Lead free in comply with EU RoHS 2011/65/EU diretives 0.086(2.20) 0.075(1.90) 0.173(4.4) 0.165(4.2) 0.010(0.26) 0.0071(0.18) 0.051(1.30) 0.043(1.10) MECHANICAL DATA 0.051(1.30) 0.039(1.0) Case: JEDEC SMBF molded plastic body Terminals: leads solderable per MIL-STD-750, Method 2026 Mounting Position: Any Weight:57mg/0.002oz 0.216(5.5) 0.200(5.1) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. MDD Catalog Number SYMBOLS Marking code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL=100 C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 5.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=125 C Maximum reverse recovery time (NOTE 1) Typical junction capacitance (NOTE 2) VRRM VRMS VDC ES5ABF ES5BBF ES5DBF ES5GBF ES5JBF E5AB E5BB E5DB E5GB E5JB 50 35 50 100 70 100 200 140 200 400 280 400 600 420 600 I(AV) IFSM VF IR trr CJ Typical thermal resistance (NOTE 3) RθJA Operating junction and storage temperature range TJ,TSTG Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3.P.C.B. mounted with 0.5x0.5”(12.7x12.7mm) copper pad areas 150 135 1.25 10.0 100.0 35 95 45 -55 to +150 VOLTS VOLTS VOLTS Amps 5.0 1.0 UNITS Amps 1.7 Volts µA ns pF C/W C RATINGS AND CHARACTERISTIC CURVES ES5ABF THRU ES5JBF Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram 50 ohm Noninductive 10 ohm Noninductive t rr +0.5 D.U.T + PULSE GENERATOR Note 2 25Vdc approx 0 - -0.25 1 ohm OSCILLOSCOPE Note 1 NonInductive -1.0 Note：1. Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. 10ns/div Set time Base for 10ns/div Fig.3 Typical Reverse Characteristics 6 300 5 100 I R- Reverse Current ( μ A) Average Forward Current (A) Fig.2 Maximum Average Forward Current Rating 4 3 2 Single phase half wave resistive or inductive P.C.B mounted on 0.5×0.5"(12.7×12.7mm ) pad areas. 1 T J =125°C 10 T J =75°C 1.0 T J =25°C 0.1 0 25 50 75 100 125 150 175 0 100 Fig.5 Typical Junction Capacitance 150 10 T J =25°C Junction Capacitance ( pF) Instaneous Forward Current (A) 80 60 % of PIV.VOLTS Fig.4 Typical Forward Characteristics 1.0 ES5ABF~ES5DBF ES5EBF/ ES5GBF 0.1 ES5JBF 0.01 0.001 0 0.5 1.5 1.0 2.0 2.5 125 100 75 50 T J =25°C f = 1.0MHz V sig = 50mV p-p 25 0.1 Fig.6 Maximum Non-Repetitive Peak Forward Surage Current 175 ES5ABF~ES5DBF 150 ES5EBF/ ES5JBF 125 100 75 50 25 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 1 10 Reverse Voltage (V) Instaneous Forward Voltage (V) Peak Forward Surage Current (A) 40 20 Lead Temperature (°C) 100 Number of Cycles The cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)! 100