DIGITRON SEMICONDUCTORS GA200-GA201A SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Symbol GA200 GA200A GA201 GA201A Repetitive peak off state voltage VDRM 60V 100V Repetitive peak on state current ITRM Ratings DC on state current 70°C ambient 70°C case GB200 GB200A GB201 GB201A 60V 100V Up to 100A IT 200mA 400mA 6A IGM 250mA 250mA Average gate current IG(AV) 25mA 50mA Reverse gate current IGR 3mA 3mA Reverse gate voltage VGR 5V 5V Thermal resistance RӨCA 300°C/W Storage temperature range Tstg -65° to 200°C TJ -65° to 150°C Peak gate current Operating temperature range ELECTRICAL CHARACTERISTICS (@ 25°C unless otherwise noted) Test Symbol Min. Typ. Max. Units Test Conditions Delay time td - 20 10 30 - ns IG = 20mA, IT = 1A IG = 30mA, IT = 1A Rise time (GA200, GA200A, GB200, GB200A) tr - 15 25 25 - ns VD = 60V, IT = 1A(1) VD = 60V, IT = 30A(1) Rise time (GA201, GA201A, GB201, GB201A) tr - 10 20 20 - ns VD = 100V, IT = 1A(1) VD = 100V, IT = 30A(1) tpg(on) - 0.02 0.05 µs IG = 10mA, IT = 1A tq - 0.8 0.3 2.0 0.5 µs IT = 1A, IR = 1A, RGK = 1K - 0.01 0.1 µA VDRM = Rating, RGK = 1K - 20 100 µA VDRM = rating, RGK = 1K, 150°C 10 mA VRRM = 30V, RGK = 1K(2) Gate trigger on pulse width Circuit commutated turn-off time (GA200, GA201, GB200, GB201) (GA200A, GA201A, GB200A, GB201A) Off-state current IDRM Reverse current IRRM - 1.0 Reverse gate current IGR - 0.01 0.1 mA VGRM = 5V Gate trigger current IGT - 10 200 µA VD = 5V, RGS = 10K Gate trigger voltage VGT 0.4 0.6 0.75 V VD = 5V, RGS = 100Ω, T = 25°C 0.10 0.20 - V T = 150°C On-state voltage VT - 1.1 1.5 V IT = 2A Holding current IH Off-state voltage - critical rate of rise dv/dt 0.3 2.0 5.0 mA VD = 5V, RGK = 1K, T = 25°C 0.05 0.2 - mA T = 150°C 20 40 - V/µS VD = 30V, RGK = 1K Note 1: IG = 10mA, Pulse test: Duty cycle < 1%. Note 2: Pulse test intended to guarantee reverse anode voltage capability for pulse commutation. Device should not be operated in the reverse blocking mode on a continuous basis. 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 fax +1.908.245-0555 [email protected] www.digitroncorp.com Rev. 20120117 DIGITRON SEMICONDUCTORS GA200-GA201A SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING MECHANICAL CHARACTERISTICS Case TO-18 Marking Alpha-numeric Pin out See below TO-18 A B C D E F G H J K L M N P 144 Market Street Kenilworth NJ 07033 USA Inches Min Max 0.209 0.230 0.178 0.195 0.170 0.210 0.016 0.021 0.030 0.016 0.019 0.100 BSC 0.036 0.046 0.028 0.048 0.500 0.250 45°C BSC 0.050 BSC 0.050 phone +1.908.245-7200 fax +1.908.245-0555 Millimeters Min Max 5.310 5.840 4.520 4.950 4.320 5.330 0.406 0.533 0.762 0.406 0.483 2.540 BSC 0.914 1.170 0.711 1.220 12.700 6.350 45° BSC 1.270 BSC 1.270 [email protected] www.digitroncorp.com Rev. 20120117 DIGITRON SEMICONDUCTORS GA200-GA201A SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING SWITCHING SPEED (TYPICAL) GA/GB200 SERIES NOTES: 1. 2. 3. 4. VD = Rated VDRM TA = 25°C IG = 20mA td = 20ns, typically for all types independent of anode current ON-STATE CURRENT VS. VOLTAGE (GA/GB200 SERIES) PEAK CURRENT VS. PULSE WIDTH (GB200 SERIES) NOTES: 1. Data based on on-state voltage graph at TJ = 150°C. Blocking voltage may be applied immediately after termination of current pulse. 2. TC = 75°C 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 fax +1.908.245-0555 PEAK CURRENT VS. PULSE WIDTH (GA200 SERIES) 1. Data based on on-state voltage graph at TJ = 150°C. Blocking voltage may be applied immediately after termination of current pulse 2. TA = 75°C SURGE RATING MAXIMUM (GA/GB200 SERIES) PEAK CURRENT VS. PULSE WIDTH (GB200 SERIES) 1. Data based on on-state voltage graph at TJ = 150°C. Blocking voltage may be applied immediately after termination of current pulse 2. TA = 75°C [email protected] www.digitroncorp.com Rev. 20120117 DIGITRON SEMICONDUCTORS GA200-GA201A SILICON CONTROLLED RECTIFIER NANOSECOND SWITCHING ON-STATE CURRENT VS. VOLTAGE (GA/GB200 SERIES) SURGE RATING MAXIMUM (GA/GB200 SERIES) NOTES: 1.Blocking voltage may not be applied for 0.001 seconds after termination of surge pulse as junction temperature will exceed 150°. 2. TC = 75°C 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 fax +1.908.245-0555 [email protected] www.digitroncorp.com Rev. 20120117