SEMICONDUCTOR GM400S17AL TECHNICAL DATA 150V/100A 1-PACK IGBT MODULE (Single) FEATURES ·IGBT SPT Technology ·Low VCE(SAT) ·Low turn-off loss OUTLINE DRAWING APPLICATION UNIT : mm Unit : mm ·Optimized for high current inverter 108 74 ±0.2 G E C INTERNAL CIRCUIT E C E C E 37 ±0.2 C G MAXIMUM RATING (@TC=25℃ Per Leg) CHARACTERISTIC @ TC = 25℃ Collector-to-Emitter Voltage Gate emitter voltage Continuous Collector Current TC = 25℃ TC = 80℃ TC = 25℃ Pulsed collector current Diode Continuous Forward Current TC = 25℃ TC = 80℃ TC = 25℃ Short circuit test TC = 125℃ SYMBOL RATING UNIT VCES 1700 V VGES ±20 V IC ICP IF tp A 400 - A A 400 10 - ㎲ Viso 4500 V Junction Temperature Tj -40 ~ 150 ℃ Storage Temperature Tstg -40 ~ 125 ℃ Weight 550 g 4.0 N.m 2.0 N.m 4.0 N.m Isolation Voltage test AC @ 1 minute Weight of Module Mounting torque with screw : M6 Mounting torque with screw : M4 Terminal connection torque : M6 2013. 4. 12 Revision No : O Md 1/3 GM400S17AL STATIC CHARACTERISTICS (@TC=25℃ Per Leg, Unless otherwise noted) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. Collector-to-Emitter Saturation Voltage VCE(ON) IC=400A , VGE=15V - 2.3 - Gate Threshold Voltage VGE(th) VCE=VGE , IC=250㎂ - 4.9 - UNIT V Zero Gate Voltage Colletor Current ICES VGE=0V, VCE=1700V - - 0.1 V Gate-to-Emitter Leakage Current IGES VCE=0V, VGE=±20V - - ±500 nA Diode Forward Voltage Drop VFM IF=400A, VGE=0V - 1.7 - V MIN. TYP. MAX. UNIT - 9.5 - - 0.64 - - 0.4 - Inductive Switching - 256 - VCC=900V - 284 - - 944 - - 96 - 1700 - - V VR=1700V - - 0.1 mA ELECTRICAL CHARACTERISTICS (IGBT/DIODE) (@TC=25℃ Per Leg, Unless otherwise noted) CHARACTERISTIC SYMBOL TEST CONDITION IGBT Ciss Input capacitance Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) tr Rise time td(off) Turn-off delay time tf Fall time VCE=25V, VGE=0V f = 1MHz IC=400A, VGE=±15V nF ns RG=6.8Ω L-Load=100uH DIODE Maximum Peak Repetitive Reverse Voltage Maximum Reverse leakage current VRRM IRM Reverse Recovery Time trr IF=400A, VR=900V - TBD - ns Reverse Recovery Charge Qrr di/dt=800A/㎲ - TBD - μC THERMAL CHARACTERISTIC CHARACTERISTIC SYMBOL MIN. TYP. MAX. Junction-to-Case (IGBT Part, Per 1/2 Module) R⊖JC - TBD - Junction-to-case (Diode Part, Per 1/2 Module) R⊖JC - TBD - Case-to-Heat Sink (Conductive grease applied) R⊖CS - TBD - 2013. 4. 12 Revision No : O UNIT ℃/W 2/3 GM400S17AL OUTLINE DRAWING UNIT : mm 108 28 ±0.2 16 ±0.2 R1 G 74 ±0.2 E C E C 13 ±0.2 67 ±0.2 2013. 4. 12 Revision No : O 37 ±0.2 36 ±0.2 29 ± 2 27 ±0.2 8±2 3/3