PD-91866B
IRF7663
HEXFET® Power MOSFET
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Trench Technology
Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
VDSS = -20V
RDS(on) = 0.020Ω
T op V ie w
Description
New trench HEXFET power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide
variety of applications.
The new Micro8 package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal package for
applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable
electronics and PCMCIA cards.
MICRO8
Absolute Maximum Ratings
VDS
ID @ T A = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
EAS
VGS
TJ, TSTG
Parameter
Max.
Units
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Junction and Storage Temperature Range
-20
-8.2
-6.6
-66
1.8
1.15
10
115
± 12
-55 to + 150
V
mW/°C
mJ
V
°C
Max.
Units
70
°C/W
A
W
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambient
1
5 /25/00
IRF7663
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-20
–––
–––
–––
-0.60
14.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
-0.01
–––
–––
–––
–––
–––
–––
–––
–––
30
5.0
7.0
11
100
125
172
2520
615
375
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250uA
––– V/°C Reference to 25°C, ID = -1mA
0.020
VGS = -4.5V, ID = -7.0A
Ω
0.040
VGS = -2.5V, ID = -5.1A
-1.2
V
VDS = VGS, ID = -250µA
–––
S
VDS = -10V, ID = -7.0A
-1.0
VDS = -16V, VGS = 0V
µA
-25
VDS = -16V, VGS = 0V, TJ = 70°C
-100
VGS = -12V
nA
100
VGS = 12V
45
ID = -6.0A
7.5
nC VDS = -10V
10.5
VGS = -5.0V
–––
VDD = -10V
–––
ID = -6.0A
ns
–––
RG = 6.2Ω
–––
RD = 1.64Ω
–––
VGS = 0V
–––
pF
V DS = -10V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
-1.8
–––
–––
-66
–––
–––
–––
–––
70
50
-1.2
105
75
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -7.0A, VGS = 0V
TJ = 25°C, IF = -2.5A
di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
When mounted on 1 inch square copper board, t<10 sec
Starting TJ = 25°C, L = 17.8mH
RG = 25Ω, IAS = -3.6A. (See Figure 10)
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IRF7663
100
100
VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
BOTTOM -2.25V
-2.25V
10
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
BOTTOM -2.25V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
1
10
-2.25V
10
20µs PULSE WIDTH
TJ = 150 °C
1
0.1
100
1
10
100
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
100
TJ = 25 ° C
TJ = 150 ° C
V DS = -15V
20µs PULSE WIDTH
10
2.0
2.5
3.0
3.5
4.0
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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ID = -8.2A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7663
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
2000
1000
Coss
Crss
ID = -6.0A
VDS = -10V
0
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
0
100
10
20
30
40
50
QG , Total Gate Charge (nC)
-VDS, Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 25 ° C
100
TJ = 150 ° C
10
10us
100us
10
1ms
1
0.5
TC = 25 ° C
TJ = 150 ° C
Single Pulse
V GS = 0 V
1.0
1.5
2.0
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
-II D , Drain Current (A)
-ISD , Reverse Drain Current (A)
C, Capacitance(pF)
3000
10
-VGS, Gate-to-Source Voltage (V)
4000
2.5
1
0.1
10ms
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7663
9.0
EAS , Single Pulse Avalanche Energy (mJ)
300
-ID , Drain Current (A)
7.5
6.0
4.5
3.0
1.5
0.0
25
50
75
100
125
ID
-1.6A
-2.9A
BOTTOM -3.6A
TOP
240
180
120
150
60
0
25
TC , Case Temperature ( ° C)
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
Thermal Response (Z thJC )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7663
Package Outline
Micro8
Dimensions are shown in millimeters (inches)
L E A D A S S IG N M E N T S
IN C H E S
D IM
D
M IL L IM E T E R S
M IN
M AX
M IN
MAX
A
.0 3 6
.0 4 4
0 .9 1
1 .1 1
A1
.0 0 4
.0 0 8
0 .1 0
0 .2 0
B
.0 1 0
.0 1 4
0 .2 5
0 .3 6
C
.0 0 5
.0 0 7
0 .1 3
0.18
D
.1 1 6
.1 2 0
2 .9 5
3.05
e
.0 2 5 6 B A S IC
0 .6 5 B A S IC
e1
.0 1 2 8 B A S IC
0 .3 3 B A S IC
E
.1 1 6
.1 2 0
2 .9 5
3 .0 5
H
.1 8 8
.1 9 8
4 .7 8
5 .0 3
e
L
.0 1 6
.0 2 6
0 .4 1
0 .6 6
6X
θ
0°
6°
0°
6°
3
-B -
D D D D
D1 D1 D2 D2
8 7 6 5
8 7 6 5
S IN G L E
DUAL
8 7 6 5
3
H
E
0 .2 5 (.0 1 0 )
-A -
M
A
M
1 2 3 4
1 2 3 4
S S S G
S1 G 1 S2 G 2
1 2 3 4
e1
R E C O M M E N D E D F O O T P R IN T
θ
1 .0 4
( .0 4 1 )
8X
A
-C B
0 .1 0 (.0 0 4 )
A 1
8X
0 .0 8 (.0 0 3 )
M
C A S
L
8X
B
S
0 .3 8
8X
( .0 1 5 )
C
8X
3 .2 0
( .1 2 6 )
4 .2 4
5 .2 8
( .1 6 7 ) ( .2 0 8 )
N O TE S :
1 D IM E N S IO N IN G A N D TO L E R A N C IN G P E R A N S I Y 14 .5M -1 982 .
0 .6 5 6 X
( .02 5 6 )
2 C O N TR O LL IN G D IM E N S IO N : IN C H .
3 D IM E N S IO N S D O N O T IN C LU D E M O LD F L AS H .
Part Marking Information
Micro8
D A T E C O D E (YW W ) A
Y = LA ST D IG IT O F YEA R
W W = W EE K
EX AM PLE : T H IS IS A N IR F 7501
45 1
75 01
P AR T N U M B ER
TOP
6
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IRF7663
Tape & Reel Information
Micro8
Dimensions are shown in millimeters (inches)
T E R M IN A L N U M B E R 1
1 2 .3 ( .4 8 4 )
1 1 .7 ( .4 6 1 )
8 .1 ( .3 1 8 )
7 .9 ( .3 1 2 )
F E E D D IR E C T IO N
N OTES:
1 . O U TL IN E C O N F O R M S TO E IA -4 81 & E IA -54 1.
2 . C O N TR O LL IN G D IM E N SIO N : M IL LIM E TE R.
3 3 0 .0 0
(1 2 .9 9 2 )
MAX.
1 4 .4 0 ( .5 6 6 )
1 2 .4 0 ( .4 8 8 )
NO TES :
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
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Data and specifications subject to change without notice.
5/00
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7