Central BAS28 TM Semiconductor Corp. DUAL, ISOLATED HIGH SPEED SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS28 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package with isolated dual diodes, designed for high speed switching applications. Marking code is A61. SOT-143 CASE MAXIMUM RATINGS (TA=25oC) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Forward Surge Current, tp=1 µsec. Forward Surge Current, tp=1 msec. Forward Surge Current, tp=1 sec. Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VR VRRM IF IFRM IFSM IFSM IFSM PD TJ,Tstg ΘJA UNITS V V mA mA mA mA mA mW 75 85 250 250 4000 2000 1000 350 -65 to +150 357 oC oC/W ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL IR IR IR VF VF VF VF CT trr Qs VFR TEST CONDITIONS MIN o VR=25V, TA=150 C VR=75V VR=75V, TA=150oC IF=1.0mA IF=10mA IF=50mA IF=150mA VR=0, f=1 MHz IF=IR=10mA, RL=100Ω, Rec. to 1.0mA IF=10mA, VR=5.0V, RL=500Ω IF=10mA, tr=20ns 58 MAX 30 1.0 50 0.715 0.855 1.000 1.250 2.0 6.0 45 1.75 UNITS µA µA µA V V V V pF ns pC V All dimensions in inches (mm). LEAD CODE: 1) CATHODE 1 2) CATHODE 2 3) ANODE 2 4) ANODE 1 R2 59