MOTOROLA MC74HCT244A Octal 3-state noninverting buffer/line driver/line receiver with lsttl-compatible input Datasheet

SEMICONDUCTOR TECHNICAL DATA
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J SUFFIX
CERAMIC PACKAGE
CASE 732–03
20
1
High–Performance Silicon–Gate CMOS
The MC54/74HCT244A is identical in pinout to the LS244. This device
may be used as a level converter for interfacing TTL or NMOS outputs to
High–Speed CMOS inputs. The HCT244A is an octal noninverting buffer
line driver line receiver designed to be used with 3–state memory address
drivers, clock drivers, and other bus–oriented systems. The device has
non–inverted outputs and two active–low output enables.
The HCT244A is the noninverting version of the HCT240. See also
HCT241.
•
•
•
•
•
•
Output Drive Capability: 15 LSTTL Loads
TTL NMOS–Compatible Input Levels
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 4.5 to 5.5 V
Low Input Current: 1 µA
In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
• Chip Complexity: 112 FETs or 28 Equivalent Gates
N SUFFIX
PLASTIC PACKAGE
CASE 738–03
20
1
DW SUFFIX
SOIC PACKAGE
CASE 751D–04
20
1
1
SD SUFFIX
SSOP PACKAGE
CASE 940C–03
1
DT SUFFIX
TSSOP PACKAGE
CASE 948E–02
20
20
ORDERING INFORMATION
Ceramic
MC54HCTXXXAJ
Plastic
MC74HCTXXXAN
SOIC
MC74HCTXXXADW
SSOP
MC74HCTXXXASD
TSSOP
MC74HCTXXXADT
LOGIC DIAGRAM
PIN ASSIGNMENT
A1
A2
A3
A4
2
18
4
16
6
14
8
12
YA1
B2
B3
B4
11
9
13
7
15
5
17
3
1
20
VCC
YA2
YA3
YA4
DATA INPUTS
B1
ENABLE A
YB1
NONINVERTING
OUTPUTS
YB2
A1
2
19
ENABLE B
YB4
3
18
YA1
A2
4
17
B4
YB3
5
16
YA2
A3
6
15
B3
YB2
7
14
YA3
A4
8
13
B2
YB1
9
12
YA4
GND
10
11
B1
YB3
YB4
FUNCTION TABLE
Inputs
PIN 20 = VCC
PIN 10 = GND
1
OUTPUT ENABLE A
ENABLES ENABLE B 19
Outputs
Enable A,
Enable B
A, B
YA, YB
L
L
H
L
H
X
L
H
Z
Z = high impedance
X = don’t care
2/97
 Motorola, Inc. 1997
1
REV 7
MC54/74HCT244A
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MAXIMUM RATINGS*
Symbol
VCC
Parameter
DC Supply Voltage (Referenced to GND)
Value
Unit
– 0.5 to + 7
V
V
Vin
DC Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
Vout
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
DC Input Current, per Pin
± 20
mA
Iout
DC Output Current, per Pin
± 35
mA
ICC
DC Supply Current, VCC and GND Pins
± 75
mA
PD
Power Dissipation in Still Air, Plastic or Ceramic DIP†
SOIC Package†
SSOP or TSSOP Package†
750
500
450
mW
Tstg
Storage Temperature
– 65 to + 150
_C
Iin
TL
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance circuit. For proper operation, Vin and
Vout should be constrained to the
range GND (Vin or Vout) VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
v
v
_C
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP, SOIC, SSOP or TSSOP Package)
(Ceramic DIP)
260
300
* Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
Ceramic DIP: – 10 mW/_C from 100_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
SSOP or TSSOP Package: – 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
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RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Vin, Vout
Parameter
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
TA
Operating Temperature, All Package Types
tr, tf
Input Rise and Fall Time (Figure 1)
Min
Max
Unit
4.5
5.5
V
0
VCC
V
– 55
+ 125
_C
0
500
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
S b l
Symbol
P
Parameter
T
Test
C
Conditions
di i
VCC
V
– 55 to
25_C
85_C
125_C
U i
Unit
VIH
Minimum High–Level Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout|
20 µA
4.5
5.5
2
2
2
2
2
2
V
VIL
Maximum Low–Level Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout|
20 µA
4.5
5.5
0.8
0.8
0.8
0.8
0.8
0.8
V
Minimum High–Level Output
Voltage
Vin = VIH or VIL
|Iout|
20 µA
4.5
5.5
4.4
5.4
4.4
5.4
4.4
5.4
V
Vin = VIH or VIL
|Iout|
6 mA
4.5
3.98
3.84
3.7
Vin = VIH or VIL
|Iout|
20 µA
4.5
5.5
0.1
0.1
0.1
0.1
0.1
0.1
Vin = VIH or VIL
|Iout|
6 mA
4.5
0.26
0.33
0.4
Vin = VCC or GND
5.5
± 0.1
± 1.0
± 1.0
VOH
VOL
Iin
MOTOROLA
Maximum Low–Level Output
Voltage
Maximum Input Leakage Current
2
V
µA
High–Speed CMOS Logic Data
DL129 — Rev 6
MC54/74HCT244A
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DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
VCC
V
– 55 to
25_C
85_C
125_C
Unit
IOZ
Maximum Three–State
Leakage Current
Output in High–Impedance State
Vin = VIL or VIH
Vout = VCC or GND
5.5
± 0.5
± 5.0
± 10
µA
ICC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
Iout = 0 µA
5.5
4
40
160
µA
∆ICC
Additional Quiescent Supply
Current
Vin = 2.4 V, Any One Input
Vin = VCC or GND, Other Inputs
lout = 0 µA
≥ –55_C
25_C to 125_C
2.9
2.4
55
5.5
mA
A
NOTES:
1. Information on typical parametric values along with frequency or heavy load considerations can be found in Chapter 2 of the Motorola High–
Speed CMOS Data Book (DL129/D).
2. Total Supply Current = ICC + Σ∆ICC.
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AC ELECTRICAL CHARACTERISTICS (VCC = 5.0 V ± 10%, CL = 50 pF, Input tr = tf = 6 ns)
Guaranteed Limit
S b l
Symbol
– 55 to
25_C
P
Parameter
85_C
125_C
U i
Unit
tPLH,
tPHL
Maximum Propagation Delay, A to YA or B to YB
(Figures 1 and 3)
20
25
30
ns
tPLZ,
tPHZ
Maximum Propagation Delay, Output Enable to YA or YB
(Figures 2 and 4)
26
33
39
ns
tPZL,
tPZH
Maximum Propagation Delay, Output Enable to YA or YB
(Figures 2 and 4)
22
28
33
ns
tTLH,
tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 3)
12
15
18
ns
Maximum Input Capacitance
10
10
10
pF
Maximum Three–State Output Capacitance (Output in High–Impedance
State)
15
15
15
pF
Cin
Cout
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the Motorola High–
Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
CPD
P
Power
Di
Dissipation
i i C
Capacitance
i
(P
(Per E
Enabled
bl d O
Output)*
)*
pF
F
55
* Used to determine the no–load dynamic power consumption: P D = C PD V CC 2 f + I CC V CC . For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).
SWITCHING WAVEFORMS
3V
tr
tf
INPUT
A OR B
3V
2.7 V
1.3 V
0.3 V
tPLH
ENABLE
A OR B
OUTPUT Y
HIGH
IMPEDANCE
1.3 V
tPZH
OUTPUT Y
tTHL
Figure 1.
High–Speed CMOS Logic Data
DL129 — Rev 6
tPLZ
GND
90%
1.3 V
10%
tTLH
GND
tPZL
tPHL
OUTPUT
YA OR YB
1.3 V
tPHZ
1.3 V
10%
VOL
90%
VOH
HIGH
IMPEDANCE
Figure 2.
3
MOTOROLA
MC54/74HCT244A
TEST CIRCUITS
TEST POINT
TEST POINT
OUTPUT
DEVICE
UNDER
TEST
OUTPUT
DEVICE
UNDER
TEST
CL*
* Includes all probe and jig capacitance
CONNECT TO VCC WHEN
TESTING tPLZ AND tPZL.
CONNECT TO GND WHEN
TESTING tPHZ AND tPZH.
1 kΩ
CL*
* Includes all probe and jig capacitance
Figure 3.
Figure 4.
LOGIC DETAIL
TO THREE OTHER
A OR B INVERTERS
ONE OF 8
BUFFERS
VCC
DATA INPUT
A OR B
YA
OR
YB
ENABLE A OR ENABLE B
MOTOROLA
4
High–Speed CMOS Logic Data
DL129 — Rev 6
MC54/74HCT244A
OUTLINE DIMENSIONS
20
11
1
10
J SUFFIX
CERAMIC PACKAGE
CASE 732–03
ISSUE E
NOTES:
1. LEADS WITHIN 0.25 (0.010) DIAMETER, TRUE
POSITION AT SEATING PLANE, AT MAXIMUM
MATERIAL CONDITION.
2. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
3. DIMENSIONS A AND B INCLUDE MENISCUS.
B
A
L
C
F
DIM
A
B
C
D
F
G
H
J
K
L
M
N
N
H
G
D
J
K
M
MILLIMETERS
MIN
MAX
23.88
25.15
6.60
7.49
3.81
5.08
0.38
0.56
1.40
1.65
2.54 BSC
0.51
1.27
0.20
0.30
3.18
4.06
7.62 BSC
0_
15 _
0.25
1.02
INCHES
MIN
MAX
0.940
0.990
0.260
0.295
0.150
0.200
0.015
0.022
0.055
0.065
0.100 BSC
0.020
0.050
0.008
0.012
0.125
0.160
0.300 BSC
0_
15_
0.010
0.040
SEATING
PLANE
N SUFFIX
PLASTIC PACKAGE
CASE 738–03
ISSUE E
–A–
20
11
1
10
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD
FLASH.
B
L
C
–T–
DIM
A
B
C
D
E
F
G
J
K
L
M
N
K
SEATING
PLANE
M
N
E
G
F
J
D
0.25 (0.010)
M
T A
11
–B–
10X
P
0.010 (0.25)
1
M
B
M
10
20X
D
0.010 (0.25)
M
T A
B
S
J
S
F
R X 45 _
C
–T–
18X
G
High–Speed CMOS Logic Data
DL129 — Rev 6
K
SEATING
PLANE
M
T B
M
M
DW SUFFIX
PLASTIC SOIC PACKAGE
CASE 751D–04
ISSUE E
–A–
20
20 PL
0.25 (0.010)
20 PL
INCHES
MIN
MAX
1.010
1.070
0.240
0.260
0.150
0.180
0.015
0.022
0.050 BSC
0.050
0.070
0.100 BSC
0.008
0.015
0.110
0.140
0.300 BSC
0_
15 _
0.020
0.040
MILLIMETERS
MIN
MAX
25.66
27.17
6.10
6.60
3.81
4.57
0.39
0.55
1.27 BSC
1.27
1.77
2.54 BSC
0.21
0.38
2.80
3.55
7.62 BSC
0_
15_
0.51
1.01
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.150
(0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.13
(0.005) TOTAL IN EXCESS OF D DIMENSION
AT MAXIMUM MATERIAL CONDITION.
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
12.65
12.95
7.40
7.60
2.35
2.65
0.35
0.49
0.50
0.90
1.27 BSC
0.25
0.32
0.10
0.25
0_
7_
10.05
10.55
0.25
0.75
INCHES
MIN
MAX
0.499
0.510
0.292
0.299
0.093
0.104
0.014
0.019
0.020
0.035
0.050 BSC
0.010
0.012
0.004
0.009
0_
7_
0.395
0.415
0.010
0.029
M
5
MOTOROLA
MC54/74HCT244A
OUTLINE DIMENSIONS
SD SUFFIX
PLASTIC SSOP PACKAGE
CASE 940C–03
ISSUE B
K REF
0.12 (0.005)
20X
20
L/2
T U
M
S
V
0.25 (0.010)
S
N
M
11
N
B
L
F
DETAIL E
PIN 1
IDENT
1
10
ÉÉÉ
ÇÇÇ
ÇÇÇ
ÉÉÉ
K
–U–
A
–V–
0.20 (0.008)
J
T U
M
J1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS. MOLD FLASH OR
GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER
SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED 0.15 (0.006) PER
SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR
PROTRUSION/INTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.13 (0.005) TOTAL IN
EXCESS OF K DIMENSION AT MAXIMUM MATERIAL
CONDITION. DAMBAR INTRUSION SHALL NOT
REDUCE DIMENSION K BY MORE THAN 0.07 (0.002)
AT LEAST MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE
ONLY.
7. DIMENSION A AND B ARE TO BE DETERMINED AT
DATUM PLANE –W–.
K1
S
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
SECTION N–N
0.076 (0.003)
–T–
SEATING
PLANE
–W–
C
D
G
DETAIL E
H
20X
0.15 (0.006) T U
DT SUFFIX
PLASTIC TSSOP PACKAGE
CASE 948E–02
ISSUE A
K REF
0.10 (0.004)
S
M
T U
S
V
S
ÍÍÍÍ
ÍÍÍÍ
ÍÍÍÍ
K
K1
2X
L/2
20
11
J J1
B
–U–
L
PIN 1
IDENT
SECTION N–N
1
10
0.25 (0.010)
N
0.15 (0.006) T U
S
N
F
DETAIL E
–W–
C
D
G
H
DETAIL E
0.100 (0.004)
–T– SEATING
INCHES
MIN
MAX
0.278
0.288
0.205
0.212
0.068
0.078
0.002
0.008
0.024
0.037
0.026 BSC
0.023
0.030
0.003
0.008
0.003
0.006
0.010
0.015
0.010
0.013
0.301
0.311
0_
8_
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS. MOLD FLASH
OR GATE BURRS SHALL NOT EXCEED 0.15
(0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED 0.25 (0.010)
PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN
EXCESS OF THE K DIMENSION AT MAXIMUM
MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE DETERMINED
AT DATUM PLANE –W–.
M
A
–V–
MILLIMETERS
MIN
MAX
7.07
7.33
5.20
5.38
1.73
1.99
0.05
0.21
0.63
0.95
0.65 BSC
0.59
0.75
0.09
0.20
0.09
0.16
0.25
0.38
0.25
0.33
7.65
7.90
0_
8_
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
MILLIMETERS
MIN
MAX
6.40
6.60
4.30
4.50
–––
1.20
0.05
0.15
0.50
0.75
0.65 BSC
0.27
0.37
0.09
0.20
0.09
0.16
0.19
0.30
0.19
0.25
6.40 BSC
0_
8_
INCHES
MIN
MAX
0.252
0.260
0.169
0.177
–––
0.047
0.002
0.006
0.020
0.030
0.026 BSC
0.011
0.015
0.004
0.008
0.004
0.006
0.007
0.012
0.007
0.010
0.252 BSC
0_
8_
PLANE
MOTOROLA
6
High–Speed CMOS Logic Data
DL129 — Rev 6
MC54/74HCT244A
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High–Speed CMOS Logic Data
DL129 — Rev 6
◊
7
MC74HCT244A/D
MOTOROLA
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