PD - 97173A
IRF7855PbF
Applications
l Primary Side Switch in Bridge Topology
in Isolated DC-DC Converters
l Primary Side Switch in Push-Pull
Topology for 18-36Vin Isolated DC-DC
Converters
l Secondary Side Synchronous
Rectification Switch for 15Vout
l Suitable for 48V Non-Isolated
Synchronous Buck DC-DC Applications
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
HEXFET® Power MOSFET
VDSS
RDS(on) max
ID
60V
9.4m:@VGS = 10V
12A
A
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
SO-8
Top View
Absolute Maximum Ratings
Max.
Units
VDS
Drain-to-Source Voltage
Parameter
60
V
VGS
Gate-to-Source Voltage
± 20
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
12
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
8.7
IDM
Pulsed Drain Current
97
PD @TA = 25°C
c
Maximum Power Dissipation
Linear Derating Factor
e
h
dv/dt
TJ
Peak Diode Recovery dv/dt
Operating Junction and
TSTG
Storage Temperature Range
A
2.5
W
0.02
W/°C
9.9
-55 to + 150
V/ns
°C
Thermal Resistance
Parameter
RθJL
RθJA
Junction-to-Drain Lead
Junction-to-Ambient (PCB Mount)
ei
Typ.
Max.
Units
–––
20
°C/W
–––
50
Notes through are on page 8
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1
05/17/06
IRF7855PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
60
∆V(BR)DSS/∆TJ
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
–––
–––
72
–––
–––
7.4
9.4
3.0
–––
4.9
mΩ
V
VDS = VGS, ID = 100µA
µA
VDS = 60V, VGS = 0V
nA
VGS = 20V
–––
–––
20
–––
–––
250
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
V
Conditions
–––
VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 12A
f
VDS = 60V, VGS = 0V, TJ = 125°C
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
–––
–––
Conditions
gfs
Qg
Forward Transconductance
14
S
VDS = 25V, ID = 7.2A
Total Gate Charge
–––
26
39
Qgs
Gate-to-Source Charge
–––
6.8
–––
nC
VDS = 30V
Qgd
Gate-to-Drain ("Miller") Charge
–––
9.6
–––
td(on)
Turn-On Delay Time
–––
8.7
–––
VDD = 30V
tr
Rise Time
–––
13
–––
ID = 7.2A
td(off)
Turn-Off Delay Time
–––
16
–––
tf
Fall Time
–––
12
–––
VGS = 10V
Ciss
Input Capacitance
–––
1560
–––
VGS = 0V
Coss
Output Capacitance
–––
440
–––
Crss
Reverse Transfer Capacitance
–––
120
–––
Coss
Output Capacitance
–––
1910
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
320
–––
VGS = 0V, VDS = 48V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
520
–––
VGS = 0V, VDS = 0V to 48V
ID = 7.2A
VGS = 10V
ns
RG = 6.2Ω
f
f
VDS = 25V
pF
ƒ = 1.0MHz
g
Avalanche Characteristics
EAS
Parameter
Single Pulse Avalanche Energy
IAR
Avalanche Current
c
d
Typ.
–––
Max.
540
Units
mJ
–––
7.2
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
–––
–––
97
VSD
Diode Forward Voltage
–––
–––
1.3
trr
Reverse Recovery Time
–––
33
50
ns
Qrr
Reverse Recovery Charge
–––
38
57
nC
ton
Forward Turn-On Time
2
(Body Diode)c
–––
–––
2.3
Conditions
MOSFET symbol
A
V
showing the
integral reverse
D
G
p-n junction diode.
TJ = 25°C, IS = 7.2A, VGS = 0V
TJ = 25°C, IF = 7.2A, VDD = 25V
di/dt = 100A/µs
S
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRF7855PbF
100
100
10
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1
0.1
4.5V
10
BOTTOM
4.5V
1
≤60µs PULSE WIDTH
≤60µs PULSE WIDTH
Tj = 25°C
Tj = 150°C
0.01
0.1
0.1
1
10
100
1000
0.1
V DS, Drain-to-Source Voltage (V)
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
T J = 150°C
10
T J = 25°C
1
VDS = 15V
≤60µs PULSE WIDTH
0.1
ID = 12A
VGS = 10V
1.5
1.0
0.5
3
4
5
6
7
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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8
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3
IRF7855PbF
10000
12.0
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
VGS, Gate-to-Source Voltage (V)
ID= 7.2A
C, Capacitance (pF)
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
10.0
VDS= 48V
VDS= 30V
VDS= 12V
8.0
6.0
4.0
2.0
0.0
100
1
10
0
100
10
20
25
30
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
100
ID, Drain-to-Source Current (A)
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T J = 150°C
10
T J = 25°C
1
100µsec
10
1msec
1
0.1
T A = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.1
10msec
0.01
0.2
0.4
0.6
0.8
1.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
15
QG, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
ISD, Reverse Drain Current (A)
5
1.2
0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7855PbF
12
RD
VDS
ID, Drain Current (A)
10
VGS
D.U.T.
RG
8
+
-VDD
10V
6
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4
Fig 10a. Switching Time Test Circuit
2
VDS
90%
0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
10%
VGS
Fig 9. Maximum Drain Current vs.
Ambient Temperature
tr
td(on)
t d(off)
tf
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
0.10
0.05
0.02
0.01
Thermal Response ( Z thJA )
10
1
0.1
τJ
0.01
R1
R1
τJ
τ1
τ1
R2
R2
τ2
R3
R3
τ3
τ2
Ci= τi/Ri
Ci= τi/Ri
τ3
τA
τA
Ri (°C/W) τi (sec)
6.734
0.027848
27.268
1.3813
16.003
53
SINGLE PULSE
( THERMAL RESPONSE )
0.001
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
16
14
RDS(on), Drain-to -Source On Resistance (m Ω)
RDS(on), Drain-to -Source On Resistance ( mΩ)
IRF7855PbF
T J = 125°C
12
10
T J = 25°C
8
6
Vgs = 10V
4
10
20
30
40
50
60
70
80
30
ID = 7.2A
25
20
T J = 125°C
15
10
T J = 25°C
5
0
4
90 100
ID, Drain Current (A)
VCC
QGS
QGD
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V(BR)DSS
L
VDS
D.U.T
RG
IAS
20V
I AS
tp
DRIVER
+
V
- DD
0.01Ω
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
9 10 11 12 13 14 15 16
2400
VG
Charge
tp
8
QG
VGS
1K
7
Fig 13. On-Resistance vs. Gate Voltage
EAS , Single Pulse Avalanche Energy (mJ)
DUT
0
6
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Drain Current
L
5
A
ID
0.41A
0.58A
BOTTOM 7.2A
TOP
2000
1600
1200
800
400
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 15c. Maximum Avalanche Energy
vs. Drain Current
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IRF7855PbF
SO-8 Package Details
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IRF7855PbF
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 21mH,
RG = 25Ω, IAS = 7.2A.
When mounted on 1 inch square copper
board, t ≤ 10 sec.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
ISD ≤ 7.2A, di/dt ≤ 650A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C.
Rθ is measured at TJ of approximately 90°C.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/06
8
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