AP18P10GS
RoHS-compliant Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
BVDSS
-100V
RDS(ON)
160mΩ
ID
G
-12A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
GD
S
TO-263(S)
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-100
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
-12
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
-10
A
1
IDM
Pulsed Drain Current
-48
A
PD@TC=25℃
Total Power Dissipation
35.7
W
0.29
W/℃
Linear Derating Factor
2
EAS
Single Pulse Avalanche Energy
40
mJ
IAR
Avalanche Current
-9
A
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
3.5
℃/W
62
℃/W
201018072-1/4
AP18P10GS
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-1mA
-100
-
-
V
RDS(ON)
Static Drain-Source On-Resistance3
VGS=-10V, ID=-8A
-
-
160
mΩ
VGS=-4.5V, ID=-6A
-
-
200
mΩ
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS= -10V, ID= -8A
-
8
-
S
IDSS
Drain-Source Leakage Current (Tj=25oC)
VDS=-100V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=150oC)
VDS=-80V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS= ±20V
-
-
±100
nA
ID=-8A
-
16
25.6
nC
VGS(th)
IGSS
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-80V
-
4.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
8.7
-
nC
VDS=-50V
-
9
-
ns
3
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-8A
-
14
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
45
-
ns
tf
Fall Time
RD=6.25Ω
-
40
-
ns
Ciss
Input Capacitance
VGS=0V
-
1590 2550
pF
Coss
Output Capacitance
VDS=-25V
-
110
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
70
-
pF
Rg
Gate Resistance
f=1.0MHz
-
8
12
Ω
Min.
Typ.
IS=-12A, VGS=0V
-
-
-1.3
V
IS=-8A, VGS=0V,
-
49
-
ns
dI/dt=-100A/µs
-
110
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
3
Forward On Voltage
3
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=-50V , L=1.0mH , RG=25Ω.
3.Pulse test
THIS PRODUCT IS ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR USE IN CONSUMER APPLICATIONS. APPLICATIONS OR USE IN LIFE SUPPORT
OR OTHER SIMILAR MISSION-CRITICAL DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
2/4
AP18P10GS
20
40
-10V
-7.0V
-5.0V
-4.5V
o
T C = 25 C
15
-ID , Drain Current (A)
-ID , Drain Current (A)
30
-10V
-7.0V
-5.0V
-4.5V
T C =150 o C
20
10
10
V G = -3.0V
5
V G = -3.0 V
0
0
0
4
8
12
16
0
20
2
4
6
8
10
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
300
2.0
I D = -8 A
T C =25 ℃
270
I D = - 12 A
V G = -10V
1.6
Normalized RDS(ON)
RDS(ON) (mΩ )
240
210
180
1.2
0.8
150
0.4
120
4
6
8
10
-50
0
50
100
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
2.0
6
1.5
T j =150 o C
4
Normalized -VGS(th) (V)
-IS(A)
2
T j =25 o C
2
150
1.0
0.5
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP18P10GS
f=1.0MHz
10000
12
C iss
V DS = - 80 V
ID= -8A
1000
9
C (pF)
-VGS , Gate to Source Voltage (V)
15
6
C oss
C rss
100
3
10
0
0
10
20
30
1
40
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
10
Normalized Thermal Response (Rthjc)
1
-ID (A)
100us
1ms
1
10ms
100ms
DC
o
T C =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0
0.1
1
10
100
1000
0.00001
0.0001
-V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
15
V DS = -5V
T j =25 o C
-ID , Drain Current (A)
12.5
VG
T j =150 o C
QG
10
-4.5V
QGS
7.5
QGD
5
2.5
Charge
Q
0
0
2
4
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-263
E
SYMBOLS
MIN
NOM
MAX
A
4.25
4.75
5.20
A1
0.00
0.15
0.30
A2
2.20
2.45
2.70
b
0.70
0.90
1.10
b1
1.07
1.27
1.47
c
0.30
0.45
0.60
D
c1
1.15
1.30
1.45
D
8.30
8.90
9.40
E
9.70
10.10
10.50
e
2.04
2.54
3.04
L2
-----
1.50
-----
L3
4.50
4.90
5.30
L4
-----
1.50
----
b1
L2
L3
b
e
L4
Millimeters
A
A2
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
c θ
c1
A1
Part Marking Information & Packing : TO-263
Part Number
Package Code
XXXXXS
18P10GS
meet Rohs requirement
YWWSSS
LOGO
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence