PHILIPS BYV27-600 Ultra fast low-loss controlled avalanche rectifier Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
BYV27 series
Ultra fast low-loss
controlled avalanche rectifiers
Product specification
Supersedes data of 1996 Oct 02
1997 Nov 24
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYV27 series
FEATURES
DESCRIPTION
• Glass passivated
Rugged glass SOD57 package, using
a high temperature alloyed
construction.
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack.
2/3 page k(Datasheet)
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
a
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VRRM
PARAMETER
CONDITIONS
−
50
V
BYV27-100
−
100
V
−
150
V
BYV27-200
−
200
V
BYV27-300
−
300
V
BYV27-400
−
400
V
BYV27-500
−
500
V
BYV27-600
−
600
V
−
50
V
continuous reverse voltage
BYV27-100
−
100
V
BYV27-150
−
150
V
BYV27-200
−
200
V
BYV27-300
−
300
V
BYV27-400
−
400
V
BYV27-500
−
500
V
BYV27-600
−
600
V
−
2.0
A
−
1.9
A
−
1.6
A
−
1.30
A
−
1.25
A
−
1.10
A
average forward current
BYV27-50 to 200
BYV27-300 and 400
Ttp = 85 °C; lead length = 10 mm;
see Figs 2, 3 and 4;
averaged over any 20 ms period;
see also Figs 14, 15 and 16
BYV27-500 and 600
IF(AV)
UNIT
BYV27-150
BYV27-50
IF(AV)
MAX.
repetitive peak reverse voltage
BYV27-50
VR
MIN.
average forward current
BYV27-50 to 200
BYV27-300 and 400
BYV27-500 and 600
1997 Nov 24
Tamb = 60 °C; printed-circuit board
mounting (see Fig. 25);
see Figs 5, 6 and 7;
averaged over any 20 ms period;
see also Figs 14, 15 and 16
2
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
SYMBOL
IFRM
IFRM
PARAMETER
repetitive peak forward current
CONDITIONS
MIN.
MAX.
UNIT
Ttp = 85 °C; see Figs 8, 9 and 10
BYV27-50 to 400
−
20
A
BYV27-500 and 600
−
16
A
repetitive peak forward current
Tamb = 60 °C;
see Figs 11, 12 and 13
−
14
A
BYV27-300 and 400
−
13
A
BYV27-500 and 600
−
11
A
BYV27-50 to 200
IFSM
BYV27 series
non-repetitive peak forward current
BYV27-50 to 400
BYV27-500 and 600
ERSM
non-repetitive peak reverse
avalanche energy
Tstg
storage temperature
Tj
junction temperature
t = 10 ms half sine wave;
Tj = Tj max prior to surge;
VR = VRRMmax
−
50
A
−
40
A
−
20
mJ
−65
+175
°C
−65
+175
°C
MIN.
TYP.
MAX.
−
−
0.78
V
−
−
0.82
V
−
−
1.00
V
−
−
0.98
V
−
−
1.05
V
−
−
1.25
V
55
−
−
V
L = 120 mH; Tj = Tj max prior to
surge; inductive load switched off
see Fig. 17
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
forward voltage
BYV27-50 to 200
CONDITIONS
IF = 2 A; Tj = Tj max;
see Figs 18, 19 and 20
BYV27-300 and 400
BYV27-500 and 600
VF
forward voltage
BYV27-50 to 200
IF = 2 A;
see Figs 18, 19 and 20
BYV27-300 and 400
BYV27-500 and 600
V(BR)R
reverse avalanche breakdown
voltage
IR = 0.1 mA
BYV27-50
BYV27-100
110
−
−
V
BYV27-150
165
−
−
V
BYV27-200
220
−
−
V
BYV27-300
330
−
−
V
BYV27-400
440
−
−
V
BYV27-500
560
−
−
V
−
675
−
VR = VRRMmax;
see Fig. 21
−
−
5
µA
VR = VRRMmax;
Tj = 165 °C; see Fig. 21
−
−
150
µA
BYV27-600
IR
reverse current
1997 Nov 24
UNIT
3
V
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
SYMBOL
trr
PARAMETER
reverse recovery time
BYV27-50 to 200
BYV27-300 to 600
Cd
BYV27 series
diode capacitance
BYV27-50 to 200
CONDITIONS
when switched from
IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A;
see Fig. 27
f = 1 MHz; VR = 0;
see Figs 22, 23 and 24
BYV27-300 and 400
BYV27-500 and 600
dI R
-------dt
maximum slope of reverse recovery
current
MIN.
when switched from
IF = 1 A to VR ≥ 30 V
and dIF/dt = −1 A/µs;
see Fig. 26
TYP.
MAX.
UNIT
−
−
25
ns
−
−
50
ns
−
100
−
pF
−
80
−
pF
−
65
−
pF
−
−
4
A/µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
46
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
100
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig. 25.
For more information please refer to the “General Part of associated Handbook”.
1997 Nov 24
4
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYV27 series
GRAPHICAL DATA
MGA849
2.0
I F(AV)
I F(AV)
(A)
20
15
(A)
10 lead length (mm)
lead length 10 mm
1.6
1.6
1.2
1.2
0.8
0.8
0.4
0.4
0
MLC293
2.0
handbook, halfpage
handbook, halfpage
0
0
100
Ttp (o C)
200
0
100
BYV27-50 to 200
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
BYV27-300 and 400
a = 1.42; VR = VRRMmax; δ = 0.5.
Fig.2
Fig.3
200
Ttp (o C)
Switched mode application.
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
MGK648
3
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
MGA848
2.0
handbook, halfpage
handbook, halfpage
I F(AV)
(A)
IF(AV)
(A)
1.6
lead length 10 mm
2
1.2
0.8
1
0.4
0
0
0
100
Ttp (°C)
200
0
100
T amb ( o C)
200
BYV27-50 to 200
a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig. 25.
BYV27-500 and 600
a = 1.42; VR = VRRMmax; δ = 0.5.
Switched mode application.
Switched mode application.
Fig.4
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
1997 Nov 24
Fig.5
5
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYV27 series
MLC294
1.6
I F(AV)
IF(AV)
(A)
(A)
1.2
1.2
0.8
0.8
0.4
0.4
0
0
MGK649
1.6
handbook, halfpage
handbook, halfpage
100
0
200
Tamb ( o C)
100
0
BYV27-300 and 400
a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig. 25.
Switched mode application.
BYV27-500 and 600
a = 1.42; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig. 25.
Switched mode application.
Fig.6
Fig.7
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
Tamb (°C)
200
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MLC297
20
handbook, full pagewidth
δ = 0.05
I FRM
(A)
16
0.1
12
0.2
8
0.5
4
1
0
10 2
10 1
1
10
10 2
10 3
t p (ms)
10 4
BYV27-50 to 200
Ttp = 85 °C; Rth j-tp = 46 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V.
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1997 Nov 24
6
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYV27 series
MLC299
20
handbook, full pagewidth
δ = 0.05
I FRM
(A)
16
12
0.1
8
0.2
4
0.5
1
0
10 2
10 1
1
10
10 2
10 3
t p (ms)
10 4
BYV27-300 and 400
Ttp = 85 °C; Rth j-tp = 46 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 400 V.
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MGK650
20
handbook, full pagewidth
IFRM
(A)
16
δ = 0.05
12
0.1
8
0.2
4
0.5
1
0
10−2
10−1
1
10
102
103
tp (ms)
104
BYV27-500 and 600
Ttp = 85 °C; Rth j-tp = 46 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 600 V.
Fig.10 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1997 Nov 24
7
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYV27 series
MLC298
16
handbook, full pagewidth
I FRM
(A)
δ = 0.05
12
0.1
8
0.2
4
0.5
1
0
10 2
10 1
1
10
10 2
10 3
10 4
t p (ms)
BYV27-50 to 200
Tamb = 60 °C; Rth j-a = 100 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V.
Fig.11 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MLC300
16
handbook, full pagewidth
I FRM
(A)
δ = 0.05
12
8
0.1
0.2
4
0.5
1
0
10 2
10 1
1
10
10 2
10 3
t p (ms)
10 4
BYV27-300 and 400
Tamb = 60 °C; Rth j-a = 100 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 400 V.
Fig.12 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1997 Nov 24
8
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYV27 series
MGK651
20
handbook, full pagewidth
IFRM
(A)
16
12
δ = 0.05
8
0.1
0.2
4
0.5
1
0
10−2
10−1
1
102
10
103
tp (ms)
104
BYV27-500 and 600
Tamb = 60 °C; Rth j-a = 100 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 600 V.
Fig.13 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MGA870
2.0
2.4
P
(W)
2.0
1.6
1.6
2.4
handbook, halfpage
a=3
P
(W)
2.5
MLC292
handbook, halfpage
2
1.57
a=3
2.5
2
1.57
1.42
1.42
1.2
1.2
0.8
0.8
0.4
0.4
0
0
0
1
I F(AV) (A)
2
0
1
BYV27-50 to 200
BYV27-300 and 400
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Fig.14 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
1997 Nov 24
I F(AV) (A)
2
Fig.15 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
9
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYV27 series
MGK652
2.0
handbook, halfpage
P
(W)
a=3
2.5
Tj
(°C)
1.57
1.6
MGK645
200
handbook, halfpage
2
1.42
1.2
100
0.8
0.4
0
0
0
1
IF(AV)(A)
0
2
BYV27-500 and 600
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
MGA864
6
MLC291
6
handbook, halfpage
IF
(A)
IF
(A)
4
4
2
2
1
V F (V)
0
2
BYV27-50 to 200
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
0
1
V
F
(V)
2
BYV27-300 and 400
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
Fig.18 Forward current as a function of forward
voltage; maximum values.
1997 Nov 24
100
Fig.17 Maximum permissible junction
temperature as a function of maximum
reverse voltage percentage.
handbook, halfpage
0
VR (%VRmax)
Solid line = VR.
Dotted line = VRRM; δ = 0.5.
Fig.16 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
0
50
Fig.19 Forward current as a function of forward
voltage; maximum values.
10
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYV27 series
MBH649
handbook, halfpage
103
handbook, halfpage
IF
(A)
IR
(µA)
6
4
102
2
10
0
MGC550
1
0
1
2
V F (V)
0
BYV27-500 and 600
Dotted line: Tj = 175 °C.
Solid line: Tj = 25 °C.
100
200
Tj (°C)
VR = VRRMmax.
Fig.20 Forward current as a function of forward
voltage; maximum values.
Fig.21 Reverse current as a function of junction
temperature; maximum values.
MLC295
102
handbook, halfpage
MLC296
2
10halfpage
handbook,
Cd
(pF)
Cd
(pF)
10
10
1
1
10
102
V R (V)
1
103
1
BYV27-50 to 200
f = 1 MHz; Tj = 25 °C.
102
V R (V)
103
BYV27-300 and 400
f = 1 MHz; Tj = 25 °C.
Fig.22 Diode capacitance as a function of reverse
voltage; typical values.
1997 Nov 24
10
Fig.23 Diode capacitance as a function of reverse
voltage; typical values.
11
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYV27 series
MGK653
102
handbook, halfpage
50
handbook, halfpage
25
Cd
(pF)
7
50
10
2
3
1
1
102
10
VR (V)
103
MGA200
BYV27-500 and 600
f = 1 MHz; Tj = 25 °C.
Dimensions in mm.
Fig.24 Diode capacitance as a function of reverse
voltage; typical values.
Fig.25 Device mounted on a printed-circuit board.
IF halfpage
ndbook,
dI F
dt
t rr
10% t
dI R
dt
100%
IR
MGC499
Fig.26 Reverse recovery definitions.
1997 Nov 24
12
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
handbook, full pagewidth
BYV27 series
IF
(A)
DUT
+
10 Ω
0.5
25 V
t rr
1Ω
50 Ω
0
t
0.25
0.5
IR
(A)
1.0
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.27 Test circuit and reverse recovery time waveform and definition.
1997 Nov 24
13
MAM057
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
PACKAGE OUTLINE
BYV27 series
Hermetically sealed glass package; axial leaded; 2 leads
SOD57
(1)
k
D
G
L
a
b
L
DIMENSIONS (mm are the original dimensions)
UNIT
b
max.
D
max.
G
max.
L
min.
mm
0.81
3.81
4.57
28
0
2.5
5 mm
scale
Note
1. The marking band indicates the cathode.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-10-14
SOD57
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Nov 24
14
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYV27 series
NOTES
1997 Nov 24
15
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,
Fax. +43 160 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p,
P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1997
SCA56
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
117027/1200/04/pp16
Date of release: 1997 Nov 24
Document order number:
9397 750 02663