HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 11 N80 IXFH/IXFM 13 N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 800 V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 11N80 13N80 11 13 A A IDM TC = 25°C, pulse width limited by TJM 11N80 13N80 44 52 A A IAR TC = 25°C 11N80 13N80 11 13 A A EAR TC = 25°C 30 mJ dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W 5 V/ns 300 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C PD TC = 25°C TJ TL 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque 1.13/10 Nm/lb.in. Weight TO-204 = 18 g, TO-247 = 6 g Symbol Test Conditions VDSS VGS(th) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 4 mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.0 TJ = 25°C TJ = 125°C 11N80 13N80 Pulse test, t £ 300 ms, duty cycle d £ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved 4.5 V V ±100 nA 250 1 mA mA 0.95 0.80 W W ID25 RDS(on) 800 V 11 A 800 V 13 A trr £ 250 ns 0.95 W 0.80 W TO-247 AD (IXFH) (TAB) TO-204 AA (IXFM) D G = Gate, S = Source, G D = Drain, TAB = Drain Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier Applications • DC-DC converters • Synchronous rectification • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control • Temperature and lighting controls • Low voltage relays Advantages • Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) • Space savings • High power density 91528F(7/97) 1-4 IXFH 11N80 IXFM 11N80 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) 8 14 S 4200 pF 360 pF 100 pF IXFH 13N80 IXFM 13N80 TO-247 AD (IXFH) Outline 20 50 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 33 50 ns td(off) RG = 2 W (External) 63 100 ns 32 50 ns 128 155 nC 30 45 nC 55 80 nC A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 K/W C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.42 RthCK 0.25 Source-Drain Diode K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 11N80 13N80 11 13 A A ISM Repetitive; pulse width limited by TJM 11N80 13N80 44 52 A A VSD IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.5 V TJ = 25°C TJ = 125°C 250 400 ns ns t rr QRM IF = IS -di/dt = 100 A/ms, VR = 100 V IRM 1 mC 8.5 A Dim. Millimeter Min. Max. L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 TO-204 AA (IXFM) Outline Dim. A B C D E F G H J K Q R © 2000 IXYS All rights reserved Inches Min. Max. Millimeter Min. Max. 38.61 39.12 19.43 19.94 6.40 9.14 0.97 1.09 1.53 2.92 30.15 BSC 10.67 11.17 5.21 5.71 16.64 17.14 11.18 12.19 3.84 4.19 25.16 25.90 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 Inches Min. Max. 1.520 1.540 - 0.785 0.252 0.360 0.038 0.043 0.060 0.115 1.187 BSC 0.420 0.440 0.205 0.225 0.655 0.675 0.440 0.480 0.151 0.165 0.991 1.020 2-4 IXFH 11N80 IXFM 11N80 Fig. 1 Output Characteristics Fig. 2 Input Admittance 18 18 TJ = 25°C 16 8V 10 8 6 VDS = 10V 14 VGS = 10V 12 ID - Amperes ID - Amperes TJ = 25°C 16 14 7V 12 10 8 6 4 4 2 2 0 0 0 2 4 6 8 10 12 0 1 2 3 VDS - Volts 1.40 6 7 8 9 10 2.50 2.25 RDS(on) - Normalized 1.30 RDS(on) - Ohms 5 Fig. 4 Temperature Dependence of Drain to Source Resistance TJ = 25°C 1.35 4 VGS - Volts Fig. 3 RDS(on) vs. Drain Current 1.25 1.20 VGS = 10V 1.15 1.10 VGS = 15V 1.05 1.00 2.00 1.75 1.50 ID = 6.5A 1.25 1.00 0.75 0.95 0.90 0 2 4 6 0.50 -50 8 10 12 14 16 18 20 22 24 26 -25 0 Fig. 5 Drain Current vs. Case Temperature 1.2 16 1.1 BV/VG(th) - Normalized 13N80 11N80 8 6 4 100 125 150 BVDSS 1.0 0.9 0.8 0.7 0.6 2 0 -50 75 VGS(th) 12 10 50 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 18 14 25 TJ - Degrees C ID - Amperes ID - Amperes IXFH 13N80 IXFM 13N80 -25 0 25 50 75 TC - Degrees C © 2000 IXYS All rights reserved 100 125 150 0.5 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C 3-4 IXFH 11N80 IXFM 11N80 Fig.7 Gate Charge Characteristic Curve IXFH 13N80 IXFM 13N80 Fig.8 Forward Bias Safe Operating Area 10 10µs 100µs ID - Amperes 8 VGE - Volts Limited by RDS(on) VDS = 400V ID = 13A IG = 10mA 6 4 10 1ms 10ms 1 100ms 2 0 0.1 0 25 50 75 100 125 150 1 10 Gate Charge - nCoulombs 1000 VDS - Volts Fig.9 Capacitance Curves Fig.10 Source Current vs. Source to Drain Voltage 4500 18 Ciss 4000 16 3500 14 3000 ID - Amperes Capacitance - pF 100 f = 1 MHz VDS = 25V 2500 2000 1500 1000 0 5 10 8 6 TJ = 125°C TJ = 25°C 2 Crss 0 10 4 Coss 500 12 15 20 0 0.0 25 0.2 VCE - Volts 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Volts Fig.11 Transient Thermal Impedance Thermal Response - K/W 1 D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2000 IXYS All rights reserved 4-4