UNISONIC TECHNOLOGIES CO., LTD MPSA06 NPN SILICON TRANSISTOR NPN TRANSISTOR FEATURES * Collector-emitter voltage: VCEO=80V * Collector dissipation: PD=625mW ORDERING INFORMATION Ordering Number Lead Free Halogen Free MPSA06L-T92-B MPSA06G-T92-B MPSA06L-T92-K MPSA06G-T92-K Package TO-92 TO-92 www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., LTD Pin Assignment 1 2 3 E B C E B C Packing Tape Box Bulk 1 of 4 QW-R201-035.C MPSA06 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 4 V Collector Current - Continuous IC 500 mA 625 mW Total device Dissipation, @TA=25°С PD 5 mW/°С Derate above 25°С 1500 mW Total device Dissipation, @TC=25°С PD 12 mW/°С Derate above 25°С Junction Temperature TJ +125 °С Storage Temperature TSTG -55 ~ +150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER SYMBOL θJA θJC Junction-to-Ambient Junction-to-Case MIN TYP MAX 200 83.3 UNIT °С/W ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 1) Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current ON CHARACTERISTICS Dc Current Gain SYMBOL TEST CONDITIONS BVCEO IC=1.0mA, IB=0 80 BVEBO ICEO ICBO IE=100μA, Ic=0 VCE=60V, IB=0 VCB=80V, IE=0 4 hFE IC=10mA, VCE=1V IC=100mA, VCE=1V IC=100mA, IB=10mA IC=100mA, VCE=1V Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter On Voltage VBE(ON) SMALL-SIGNAL CHARACTERISTICS Current Gain Bandwidth Product fT IC=10mA, VCE=2V, f=100MHz (Note 2) Note 1. Pulse test: PW<=300μs, Duty Cycle<=2% 2. fT is defined as the frequency at which IhfeI extrapolates to unity. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT V 0.1 0.1 V μA μA 0.25 1.2 V V 100 100 100 MHz 2 of 4 QW-R201-035.C MPSA06 TYPICAL CHARACTERISTICS Current-Gain-Bandwidth Product, fT(MHz) Capacitance 80 TJ=25°С 60 40 Cibo 20 10 8.0 Cobo 6.0 4.0 0.1 0.5 1.0 5.0 10 50 100 Reverse Voltage, VR (Volts) Active-Region Safe Operating Area 1.0k 700 500 100µs ms 1.0 300 TC=25°С 1.0s 200 100 70 50 TA=25°С Current Limit Thermal Limit Second Breakdown Limit 30 20 10 1.0 2.0 5.0 10 50 100 Collector-Emitter Voltage, VCE (Volts) “On” Voltages 1.0 TJ=25°С VBE(SAT) @ IC/IB=10 0.8 Voltage, V (Volts) DC Current Gain, hFE NPN SILICON TRANSISTOR 0.6 VBE(ON) @ VCE=1.0V 0.4 0.2 VCE(ON) @ IC/IB=10 0 0.5 1.0 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5.0 10 50 100 Collector Current, IC (mA) 500 3 of 4 QW-R201-035.C MPSA06 TYPICAL CHARACTERISTICS(Cont.) Collector-Emitter Voltage, VCE (Volts) Collector Saturation Region 1.0 Base-Emitter Temperature Coefficient TJ=25°С 0.8 IC=50mA IC=250mA IC=100mA IC=500mA -0.8 -1.2 0.6 -1.6 0.4 -2.0 0.2 IC=10mA 0 0.5 1.0 50 100 5.0 10 Collector Current, IC (mA) RθVB for VBE -2.4 500 -2.8 0.5 1.0 5.0 10 50 100 Collector Current, IC (mA) 500 Normalzed Transient Thermal Resistance, r(t) NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R201-035.C