Product Specification www.jmnic.com Silicon PNP Power Transistors MJE15029 · DESCRIPTION ·With TO-220C package ·Complement to type MJE15028 ·High transition frequency ·DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC =- 3.0 Adc hFE = 20 (Min) @ IC = -4.0 Adc APPLICATIONS ·Designed for use as high–frequency drivers in audio amplifiers. PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -8 A ICM Collector current-Peak -16 A IB Base current -2 A PD Total power dissipation Ta=25℃ 2 TC=25℃ 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-C Thermal resistance ; junction to case 2.5 ℃/W Rth j-A Thermal resistance , junction to ambient 62.5 ℃/W Product Specification www.jmnic.com Silicon PNP Power Transistors MJE15029 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=-10mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-1A ;IB=-0.1A -0.5 V VBE Base-emitter on voltage IC=-1A ; VCE=-2V -1.0 V ICBO Collector cut-off current VCB=-120V; IE=0 -10 μA ICEO Collector cut-off current VCE=-120V; IB=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE-1 DC current gain IC=-0.1A ; VCE=-2V 40 hFE-2 DC current gain IC=-2A ; VCE=-2V 40 hFE-3 DC current gain IC=-3A ; VCE=-2V 40 hFE-4 DC current gain IC=-4A ; VCE=-2V 20 Transition frequency IC=0.5A;VCE=-10V;f=10MHz 30 fT CONDITIONS 2 MIN TYP. MAX -120 UNIT V MHz Product Specification www.jmnic.com Silicon PNP Power Transistors MJE15029 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm) 3 Product Specification www.jmnic.com Silicon PNP Power Transistors MJE15029 4