Vishay BAR63V-06W-GS08 Rf pin diodes - dual, common anode in sot-323 Datasheet

BAR63V-06W
Vishay Semiconductors
RF PIN Diodes - Dual, Common Anode in SOT-323
Description
2
Characterized by a very low reverse Capacitance the
PIN Diode BAR63V-06W was designed for RF signal
tuning. As a function of the forward bias current the
forward resistance (rf) can be adjusted to less than
1 Ω while the low reverse capacitance offers a high
isolation. Typical applications for this PIN Diode are
wireless, mobile and TV-systems.
3
1
1
2
18381
3
Features
• Low forward resistance
• Very small reverse capacitance
e3
• Lead (Pb)-free component
• Component in accordance to
RoHS 2002/95/EC and WEEE 2002/96/EC
Applications
For frequency up to 3 GHz
RF-signal tuning
Mobile, wireless and TV-Applications
Mechanical Data
Case: SOT-323 Plastic case
Weight: approx. 6.0 mg
Cathode Band Color: Laser marking
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
BAR63V-06W
Ordering code
Marking
BAR63V-06W-GS18 or BAR63V-06W-GS08
Remarks
CW6
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Symbol
Value
Reverse voltage
Parameter
Test condition
VR
50
V
Forward current
IF
100
mA
Junction temperature
Storage temperature range
Unit
Tj
150
°C
Tstg
- 55 to + 150
°C
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
VR
50
Typ.
Max
Unit
Reverse voltage
IR = 10 µA
Reverse current
VR = 35 V
IR
10
nA
Forward voltage
IF = 100 mA
VF
1.2
V
Diode capacitance
f = 1 MHz, VR = 0
CD
0.28
f = 1 MHz, VR = 5 V
CD
0.23
Document Number 85700
Rev. 1.3, 15-Apr-05
V
pF
0.3
pF
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1
BAR63V-06W
Vishay Semiconductors
Parameter
Test condition
Forward resistance
Charge carrier life time
Symbol
Min
Typ.
Max
Unit
Ω
f = 100 MHz, IF = 1 mA
rf
2.0
f = 100 MHz, IF = 5 mA
rf
1.1
f = 100 MHz, IF = 10 mA
rf
0.9
Ω
IF = 10 mA, IR = 6 mA, iR = 3 mA
trr
115
ns
2.0
Ω
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
rf - Forward Resistance ( W )
6
100.00
f = 100 MHz
I F - Forward Current ( mA )
5
4
3
2
1
0
0.1
10.00
1.00
0.10
0.01
1.0
10
IF - Forward Current ( mA )
18341_1
100
0.5
Figure 1. Forward Resistance vs. Forward Current
0.8
0.9
1.0
120
f = 1 MHz
0.25
V R - Reverse V oltage ( V )
CD - Diode Capacitance ( pF )
0.7
Figure 3. Forward Current vs. Forward Voltage
0.30
0.20
0.15
0.10
0.05
0.00
0
4
8
12
16
20
24
Figure 2. Diode Capacitance vs. Reverse Voltage
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100
80
60
40
20
0
0.01
28
VR - Reverse V oltage (V)
18333
2
0.6
VF - Forward Voltage ( V )
18325
18329
0.1
1.0
10
100
1000
IR - Reverse Current ( µA )
Figure 4. Reverse Voltage vs. Reverse Current
Document Number 85700
Rev. 1.3, 15-Apr-05
BAR63V-06W
Vishay Semiconductors
12
I F - Forward Current ( mA )
10
IF = 10 mA
IR = 6 mA
i rr = 3 mA
8
6
4
2
0
-2
-4
-6
-8
-50
0
50
100
150
200
Recovery Time ( ns )
18337
Figure 5. Typical Charge Recovery Curve
Package Dimensions in mm (Inches)
0.10 (0.004)
1.00 (0.039)
0.10 (0.004)
SO Method E
10
Mounting Pad Layout
2.05 (0.080)
0.39 (0.015)
2.0 (0.079)
0.95 (0.37)
0.30 (0.012)
1.3 (0.051)
Document Number 85700
Rev. 1.3, 15-Apr-05
2.00 (0.078)
1.25 (0.049)
0.9 (0.035)
0.95 (0.037)
96 12236
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3
BAR63V-06W
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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4
Document Number 85700
Rev. 1.3, 15-Apr-05
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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Document Number: 91000
Revision: 18-Jul-08
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