DOMINANT Semiconductors DomiLED GaN - DDx-JJx-I1 • High brightness surface mount LED. • Based on GaN technology. • 120° viewing angle. • Small package outline (LxWxH) of 2.8 x 3.2 x 1.8 mm. • Qualified according to JEDEC moisture sensitivity Level 2. • Compatible to both IR reflow soldering and TTW soldering. 15/03/05 DomiLED GaN DDx-xJx - Catalogue-v3.doc Page 1 of 1 DOMINANT Semiconductors Part Ordering Number Chip Technology / Color DDB-JJS-KL2-1-I1 GaN / • • • • DDB-JJS-K1 DDB-JJS-K2 DDB-JJS-L1 DDB-JJS-L2 DDW-JJD-MN1-1-I1 • • • DDW-JJD-M1 DDW-JJD-M2 DDW-JJD-N1 Viewing angle Luminous Intensity @ If = 10mA Iv (mcd ) 120 7.2 … 18.0 7.2 … 9.0 9.0 … 11.2 11.2 … 14.0 14.0 … 18.0 Blue, 466 nm GaN / 120 18.0 … 35.5 White 18.0 … 22.4 22.4 … 28.5 28.5 … 35.5 NOTE: 1. All part number above comes in a quantity of 2000 units per reel. 2. Other luminous intensity groups are also available upon request. 3. Luminous intensity is measured with an accuracy of ±11%. 4. Wavelength binning is carried for all units as per the wavelength-binning table. Only one wavelength group is allowed for each reel. Wavelength Grouping. Color DDB; Blue Group Wavelength distribution (nm) Full 464 - 476 W 464 - 468 X 468 - 472 Y 472 - 476 Dominant wavelength is measured with an accuracy of ±1 nm. 15/03/05 DomiLED GaN DDx-xJx - Catalogue-v3.doc Page 2 of 2 DOMINANT Semiconductors DDW, White Color Grouping Dominant White Bin Structure 0.43 0.42 0.41 0.40 0.39 0.38 0.37 0.36 0.35 0.34 0.33 0.32 0.31 0.30 0.29 0.28 0.27 0.26 0.25 0.24 0.27 E3 E4 E1 E2 C3 C1 A3 C4 C2 A4 A1 A2 0.28 0.29 0.30 0.31 0.32 0.33 0.34 0.35 0.36 Chromaticity coordinate groups are measured with an accuracy of ±0.01. Bin A1 A2 A3 A4 C1 C2 C3 C4 Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy Cx Cy 0.2775 0.2732 0.2775 0.2557 0.2900 0.2939 0.2900 0.2764 0.3025 0.3146 0.3025 0.2971 0.3150 0.3354 0.3150 0.3179 W 0.2900 0.2939 0.2900 0.2764 0.3025 0.3146 0.3025 0.2971 0.3150 0.3354 0.3150 0.3179 0.3275 0.3561 0.3275 0.3386 0.2900 0.3114 0.2900 0.2939 0.3025 0.3321 0.3025 0.3146 0.3150 0.3529 0.3150 0.3354 0.3275 0.3736 0.3275 0.3561 0.2775 0.2907 0.2775 0.2732 0.2900 0.3114 0.2900 0.2939 0.3025 0.3321 0.3025 0.3146 0.3150 0.3529 0.3150 0.3354 Bin E1 Cx Cy E2 Cx Cy E3 Cx Cy E4 Cx Cy 0.3275 0.3561 0.3275 0.3386 0.3400 0.3768 0.3400 0.3593 X 0.3400 0.3768 0.3400 0.3593 0.3525 0.3975 0.3525 0.3800 0.3400 0.3943 0.3400 0.3768 0.3525 0.4150 0.3525 0.3975 0.3275 0.3736 0.3275 0.3561 0.3400 0.3943 0.3400 0.3768 Dominant color coordinate is measured with an accuracy of ±0.01 15/03/05 DomiLED GaN DDx-xJx - Catalogue-v3.doc Page 3 of 3 DOMINANT Semiconductors Absolute Maximum Ratings. Maximum Value Unit DC forward current. 20 mA Peak pulse current; (tp ≤ 10 μs, Duty cycle = 0.005) 200 mA Forward voltage (IF=20mA) 4.55 V Reverse voltage (IR=10 μA) 5 V 125 °C Operating temperature. -40 … +100 °C Storage temperature. -40 … +100 °C LED junction temperature. Power dissipation ( at room temperature ) 85 mW Recommended Solder Pad 15/03/05 DomiLED GaN DDx-xJx - Catalogue-v3.doc Page 4 of 4 DOMINANT Semiconductors Relative luminous intensity vs. forward current. Forward current vs. forward voltage. Forward Current (mA) vs. Forward Voltage (GaN:Blue) 35 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 30 Forward Current (mA) Relative Intensity, Normalized at 10mA Intensity Vs Forward Current 25 20 15 10 5 0 5 10 15 20 25 30 35 0 2.0 Forw ard Current (m A) 2.5 3.0 3.5 4.0 4.5 5.0 Forward Voltage (V) Radiation pattern. 30° Maximum forward current vs. temperature. 10° 20° 0° 25 1.0 40° 20 50° 0.6 60° 0.4 Forward Current, If 0.8 15 10 5 70° 0.2 80° 0 0 90° 0 10 20 30 40 50 60 70 80 Ambient Temperature Relative Intensity vs. Wavelength Relative Spectral Emission 1.0 0.9 White Relative Intensity 0.8 0.7 Blue 0.6 0.5 0.4 0.3 0.2 0.1 0.0 400 450 500 550 600 650 700 Wavelength (nm) 15/03/05 DomiLED GaN DDx-xJx - Catalogue-v3.doc Page 5 of 5 90 100 DOMINANT Semiconductors Taping And Orientation. Reels come in quantity of 8000 units or 2000 units. Reel diameters are 330 mm and 180 mm respectively. 15/03/05 DomiLED GaN DDx-xJx - Catalogue-v3.doc Page 6 of 6 DOMINANT Semiconductors Recommended Sn-Pb IR-Reflow Soldering Profile. Classification Reflow Profile (JEDEC J-STD-020C) 275 250 235-240oC 10-30s Temperature (oC) 225 Ramp-up 3 oC/sec max. 200 183 oC 175 60-150s 150 125 Ramp-down 6 oC/sec max. 100 Preheat 60-120s 75 50 360s max 25 0 50 100 150 200 Time (sec) Recommended Pb Free IR-Reflow Soldering Profile. Classification Reflow Profile (JEDEC J-STD-020C) 300 275 Temperature ( oC) 250 Ramp-up 3 oC/sec max. 217 oC 225 260-255oC 10-30s 200 60-150s 175 150 125 Ramp-down 6 oC/sec max. 100 Preheat 60-180s 75 50 480s max 25 0 50 100 150 200 Time (sec) 15/03/05 DomiLED GaN DDx-xJx - Catalogue-v3.doc Page 7 of 7 DOMINANT Semiconductors NOTE. All the information published is considered to be reliable. However, DOMINANT Semiconductors does not assume any liability arising out of the application or use of any product described herein. DOMINANT Semiconductors reserves the right to make changes at any time without notice to any products in order to improve reliability, function or design. DOMINANT Semiconductors products are not authorized for use as critical components in life support devices or systems without the express written approval from the managing director of DOMINANT Semiconductors. 15/03/05 DomiLED GaN DDx-xJx - Catalogue-v3.doc Page 8 of 8