Sirectifier MUR3080 Ultra fast recovery diode Datasheet

MUR3080, MUR30100
Ultra Fast Recovery Diodes
Dimensions TO-247AC
A
C(TAB)
C
A
C
A=Anode, C=Cathode, TAB=Cathode
MUR3080
MUR30100
VRSM
V
800
1000
Symbol
IFRMS
IFAVM
IFRM
IFSM
Test Conditions
Inches
Min.
Max.
A
B
19.81 20.32
20.80 21.46
0.780
0.819
0.800
0.845
C
D
15.75 16.26
3.55 3.65
0.610
0.140
0.640
0.144
E
F
4.32
5.4
5.49
6.2
0.170
0.212
0.216
0.244
G
H
1.65
-
2.13
4.5
0.065
-
0.084
0.177
J
K
1.0
10.8
1.4
11.0
0.040
0.426
0.055
0.433
L
M
4.7
0.4
5.3
0.8
0.185
0.016
0.209
0.031
N
1.5
2.49
0.087
0.102
Unit
TVJ=TVJM
TC=85oC; rectangular, d=0.5
tp<10us; rep. rating, pulse width limited by TVJM
70
30
375
A
TVJ=45oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
200
210
185
195
A
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
200
180
170
160
A2s
TVJ=150oC
TVJ=150oC
-40...+150
150
-40...+150
TVJ
TVJM
Tstg
Ptot
TC=25oC
Md
Mounting torque
Weight
Millimeter
Min. Max.
Maximum Ratings
TVJ=45oC
I2t
VRRM
V
800
1000
Dim.
o
C
138
W
0.8...1.2
Nm
6
g
MUR3080, MUR30100
Ultra Fast Recovery Diodes
Symbol
Test Conditions
Characteristic Values
typ.
max.
Unit
IR
TVJ=25oC; VR=VRRM
TVJ=25oC; VR=0.8.VRRM
TVJ=125oC; VR=0.8.VRRM
750
250
7
uA
uA
mA
VF
IF=36A; TVJ=150oC
TVJ=25oC
2
2.4
V
VTO
For power-loss calculations only
1.5
V
TVJ=TVJM
12.5
rT
RthJC
RthCK
RthJA
trr
IRM
m
0.9
K/W
0.25
35
IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC
o
_
VR=540V; IF=30A; -diF/dt=240A/us; L<0.05uH;
TVJ=100 C
35
50
ns
16
18
A
FEATURES
APPLICATIONS
ADVANTAGES
* International standard package
JEDEC TO-247AC
* Planar passivatd chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Soft recovery behaviour
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating and melting
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses
* Operating at lower temperature or
space saving by reduced cooling
MUR3080, MUR30100
Ultra Fast Recovery Diodes
Fig. 1 Forward current
versus voltage drop.
Fig. 2 Recovery charge versus -diF/dt.
Fig. 3 Peak reverse current versus
-diF/dt.
Fig. 4 Dynamic parameters versus
junction temperature.
Fig. 5 Recovery time versus -diF/dt.
Fig. 6 Peak forward voltage
versus diF/dt.
Fig. 7 Transient thermal impedance junction to case.
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