INCHANGE Semiconductor isc N-Channel MOSFET Transistor SPP11N60CFD，ISPP11N60CFD ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.44Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Pulsed 28 A PD Total Dissipation @TC=25℃ 125 W Tj Max. Operating Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(ch-c) Rth(ch-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 1 ℃/W 62 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor SPP11N60CFD，ISPP11N60CFD ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =0.25mA 600 VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.5mA 3 RDS(on) Drain-Source On-Resistance IGSS TYP MAX UNIT V 5 V VGS=10V; ID=7A 0.44 Ω Gate-Source Leakage Current VGS=20V; VDS=0V 0.1 μA IDSS Drain-Source Leakage Current VDS=600V; VGS= 0V VSD Diode forward voltage IF=Is; VGS = 0V isc website：www.iscsemi.cn 2 1.1 μA 1.2 V isc & iscsemi is registered trademark