BAS70LT1 Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. http://onsemi.com Features • Extremely Fast Switching Speed • Low Forward Voltage • Pb−Free Package is Available 70 VOLTS SCHOTTKY BARRIER DIODES 3 CATHODE 3 MAXIMUM RATINGS (TJ = 150°C unless otherwise noted) Rating Symbol Value Unit Forward Current IF 70 mA Reverse Voltage VR 70 V Forward Power Dissipation @ TA = 25°C Derate above 25°C PF 225 1.8 mW mW/°C −55 to +150 °C Operating Junction and Storage Temperature Range TJ, Tstg 1 ANODE Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. SOT−23 CASE 318 STYLE 8 1 2 MARKING DIAGRAM BE M G G 1 BE Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping † BAS70LT1 SOT−23 3000 / Tape & Reel SOT−23 (Pb−Free) 3000 / Tape & Reel BAS70LT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 5 1 Publication Order Number: BAS70LT1/D BAS70LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Reverse Breakdown Voltage − (IR = 10 mA) V(BR)R 70 − V Total Capacitance − (VR = 0 V, f = 1.0 MHz) CT − 2.0 pF Reverse Leakage (VR = 50 V) (VR = 70 V) IR − − 0.1 10 Forward Voltage − (IF = 1.0 mA) VF − 410 mV Forward Voltage − (IF = 10 mA) VF − 750 mV Forward Voltage − (IF = 15 mA) VF − 1.0 V IR , REVERSE CURRENT (μA) 100 10 1.0 150°C 125 °C 0.1 0 0.1 0.3 0.4 0.5 TA = 150°C 125°C 1.0 85°C 0.1 25°C −55 °C 0.2 10 0.01 −40 °C 85°C 25°C 0.6 0.7 0.8 0.9 0.001 1.0 5.0 0 25 15 20 30 35 VR, REVERSE VOLTAGE (VOLTS) 10 VF, FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 1.2 1.0 0.8 0.6 0.4 0.2 0 0 5.0 10 40 45 Figure 2. Reverse Current versus Reverse Voltage 1.4 C T, CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 mA 15 20 25 30 35 40 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Capacitance http://onsemi.com 2 45 50 50 BAS70LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 DIM A A1 b c D E e L L1 HE 2 b 0.25 e q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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