CYStech Electronics Corp. Spec. No. : C140Q8 Issued Date : 2016.01.27 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTD07N04Q8 Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Repetitive Avalanche Rated • Pb-free & Halogen-free package Symbol BVDSS ID @ TA=25°C, VGS=10V RDS(ON)@VGS=10V, ID=11A RDS(ON)@VGS=4.5V, ID=8A 40V 16A 6.4 mΩ(typ) 9.4 mΩ(typ) Outline MTD07N04Q8 SOP-8 Pin 1 G：Gate D：Drain S：Source Ordering Information Device MTD07N04Q8-0-T3-G Package SOP-8 (RoHS compliant & Halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTD07N04Q8 CYStek Product Specification Spec. No. : C140Q8 Issued Date : 2016.01.27 Revised Date : Page No. : 2/9 CYStech Electronics Corp. Absolute Maximum Ratings (Tc=25°C, unless otherwise noted) Parameter Symbol Limits Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=70°C, VGS=10V Pulsed Drain Current Avalanche Current Avalanche Energy @ L=2mH, ID=16A, VDD=50V Repetitive Avalanche Energy @ L=0.05mH TA=25 °C Total Power Dissipation TA=70 °C Operating Junction and Storage Temperature Note : *1. Pulse width limited by maximum junction temperature VDS VGS 40 ±20 16 12.8 64 *1 16 256 *3 1.6 *2 3.1 2 -55~+150 ID IDM IAS EAS EAR PD Tj, Tstg Unit V A mJ W °C *2. Duty cycle ≤ 1% *3. 100% tested by conditions of L=0.5mH, IAS=16A, VGS=10V, VDD=25V Thermal Data Parameter Thermal Resistance, Junction-to-case Thermal Resistance, Junction-to-ambient (Note) Symbol RθJC RθJA Value 20 40 Unit °C/W Note : 40°C / W when mounted on a 1 in2 pad of 2 oz copper, t≤10s; 125°C/W when mounted on minimum pad. Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) GFS IGSS IDSS *RDS(ON) Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 Ciss Coss Crss MTD07N04Q8 Min. Typ. Max. Unit 40 1.5 - 29 28 6.4 9.4 3.0 ±100 1 10 8 12 V mV/°C V S nA - 32.3 5.5 9.9 1421 172 126 - μA mΩ Test Conditions VGS=0V, ID=250μA Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =5V, ID=8A VGS=±20V VDS =32V, VGS =0V VDS =32V, VGS =0V, Tj=55°C VGS =10V, ID=11A VGS =4.5V, ID=8A nC VDS=32V, VGS=10V, ID=16A pF VDS=25V, VGS=0V, f=1MHz CYStek Product Specification CYStech Electronics Corp. Spec. No. : C140Q8 Issued Date : 2016.01.27 Revised Date : Page No. : 3/9 Characteristics (Cont. TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Dynamic td(ON) *1, 2 14.6 tr 18.8 *1, 2 ns td(OFF) *1, 2 43.4 tf *1, 2 8 Source-Drain Diode Ratings and Characteristics IS *1 4 A ISM *3 16 VSD *1 0.79 1.2 V trr 14.4 ns Qrr 9.4 nC Test Conditions VDD=20V, ID=1A, VGS=10V, RG=1Ω IS=11A, VGS=0V IF=11A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended Soldering Footprint MTD07N04Q8 CYStek Product Specification Spec. No. : C140Q8 Issued Date : 2016.01.27 Revised Date : Page No. : 4/9 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 60 BVDSS, Normalized Drain-Source Breakdown Voltage 10V, 9V, 8V, 7V, 6V, 5V ID, Drain Current (A) 50 4.5V 40 30 4V 20 3.5V 10 VGS=3V 1.2 1 0.8 0.6 ID=250μA, VGS=0V 0.4 0 0 2 4 6 8 VDS, Drain-Source Voltage(V) -75 -50 -25 10 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1.2 VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(mΩ) 100 VGS=4.5V 10 VGS=10V VGS=0V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 1 0.1 1 10 ID, Drain Current(A) 0 100 2 4 6 8 10 12 14 16 IDR , Reverse Drain Current(A) 18 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 2.4 ID=11A 90 R DS(on), Normalized Static DrainSource On-State Resistance R DS(on), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 80 70 60 50 40 30 20 10 2 VGS=10V, ID=11A 1.6 1.2 0.8 0.4 RDS(ON) @Tj=25°C : 6.4mΩ typ. 0 0 0 MTD07N04Q8 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C140Q8 Issued Date : 2016.01.27 Revised Date : Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C oss 100 Crss 1.4 1.2 ID=1mA 1 0.8 0.6 ID=250μA 0.4 0.2 10 0 5 10 15 20 25 VDS, Drain-Source Voltage(V) -75 -50 -25 30 50 75 100 125 150 175 Gate Charge Characteristics 100 10 VDS=10V 10 VDS=15V 1 0.1 Ta=25°C Pulsed 0.01 0.001 8 VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 25 Tj, Junction Temperature(°C) Forward Transfer Admittance vs Drain Current VDS=32V 4 2 0.01 0.1 1 ID, Drain Current(A) 10 0 100 10ms 100ms 1s 1 DC TA=25°C, Tj=150°C VGS=10V, RθJA=40°C/W Single Pulse 35 40 16 12 8 4 TA=25°C, VGS=10V, RθJA=40°C/W 0 0.01 MTD07N04Q8 10 15 20 25 30 Qg, Total Gate Charge(nC) 20 ID, Maximum Drain Current(A) 1ms 10 5 Maximum Drain Current vs Junction Temperature 100μs RDSON Limited 0.01 ID=16A 0 100 0.1 VDS=20V 6 Maximum Safe Operating Area ID, Drain Current(A) 0 0.1 1 10 VDS, Drain-Source Voltage(V) 100 25 50 75 100 125 Tj, Junction Temperature(°C) 150 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C140Q8 Issued Date : 2016.01.27 Revised Date : Page No. : 6/9 Typical Characteristics(Cont.) Single Pulse Power Rating, Junction to Case Typical Transfer Characteristics 2000 60 1800 VDS=10V TJ(MAX) =150°C TA=25°C RθJA=40°C/W 1600 1400 40 Power (W) ID, Drain Current(A) 50 30 20 1200 1000 800 600 400 10 200 0 0 2 4 6 8 VGS, Gate-Source Voltage(V) 10 0 0.0001 0.001 0.01 0.1 Pulse Width(s) 1 10 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=40°C/W 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 MTD07N04Q8 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 1.E+02 1.E+03 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C140Q8 Issued Date : 2016.01.27 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTD07N04Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C140Q8 Issued Date : 2016.01.27 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTD07N04Q8 CYStek Product Specification Spec. No. : C140Q8 Issued Date : 2016.01.27 Revised Date : Page No. : 9/9 CYStech Electronics Corp. SOP-8 Dimension Marking: Device Name Date Code D07 N04 Date Code(counting from left to right) : 1st code: year code, the last digit of Christian year 2nd code : month code, Jan→A, Feb→B, Mar→C, Apr→D May→E, Jun→F, Jul→G, Aug→H, Sep→J, Oct→K, Nov→L, Dec→M 3rd and 4th codes : prodcution serial number, 01~99 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 Millimeters Min. Max. 1.350 1.750 0.100 0.250 1.350 1.550 0.330 0.510 0.170 0.250 4.700 5.100 DIM A A1 A2 b c D Inches Min. Max. 0.053 0.069 0.004 0.010 0.053 0.061 0.013 0.020 0.006 0.010 0.185 0.200 DIM E E1 e L θ Millimeters Min. Max. 3.800 4.000 5.800 6.200 1.270 (BSC) 0.400 1.270 8° 0 Inches Min. Max. 0.150 0.157 0.228 0.244 0.050 (BSC) 0.016 0.050 8° 0 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTD07N04Q8 CYStek Product Specification