Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ403BX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM VCBO VCEO VEBO IC ICM Ptot VCEsat hFEsat tfi Collector-emitter voltage peak value Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage DC current gain Fall time VBE = 0 V 18 0.14 21 140 1200 1200 525 6 10 32 1.0 25 203 V V V V A A W V PINNING - SOT186A PIN Ths ≤ 25 ˚C IC = 2 A; IB = 0.4 A IC = 2 A; VCE = 5 V IC = 2.5 A; IB1 = 0.5 A PIN CONFIGURATION SYMBOL DESCRIPTION c case 1 base 2 collector 3 emitter ns b case isolated e 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO VCBO VEBO IC ICM IB IBM Ptot Tstg Tj Collector to emitter voltage Collector to emitter voltage (open base) Collector to base voltage (open emitter) Emitter-base voltage (open collector) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature VBE = 0 V November 1999 Ths ≤ 25 ˚C 1 MIN. MAX. UNIT 16 -65 - 1200 525 1200 6 10 3 5 32 150 150 V V V V A A A A W ˚C ˚C Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ403BX AVALANCHE ENERGY CAPABILITY SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT - 1.0 mJ TYP. MAX. UNIT - 3.95 K/W 55 - K/W MIN. TYP. MAX. UNIT - - 0.2 0.5 mA mA 525 - 0.1 1.0 - mA mA V 19 30 17 0.14 0.89 28 45 21 1.0 1.5 65 25 V V TYP. MAX. UNIT 0.6 4.5 0.4 0.95 6.4 0.59 µs µs µs 1.67 140 2.3 203 µs ns 1.9 144 2.7 216 µs ns VCC = 150V; VBB = -5V; LC = 15mH;LB = 1µH EAS Avalanche Energy Capability1 Ths ≤ 110 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Junction to heatsink with heatsink compound Rth j-a Junction to ambient in free air STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS 2 ICES,ICBO ICES Collector cut-off current ICEO IEBO VCEOsust Collector cut-off current 2 Emitter cut-off current Collector-emitter sustaining voltage VCEsat VBEsat hFE hFE hFEsat Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain DC current gain VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VCEO = VCEOMmax(550V) VEB = 9 V; IC = 0 A IB = 0 A; IC = 10 mA; L = 25 mH IC = 2.0 A;IB = 0.4 A IC = 2.0 A;IB = 0.4 A IC = 1 mA; VCE = 5 V IC = 500 mA;VCE = 5 V IC = 2.0 A; VCE = 5 V DYNAMIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL ton ts tf PARAMETER CONDITIONS Switching times (resistive load) ICon = 2.5 A; IBon = -IBoff = 0.5 A; RL = 75 ohms; VBB2 = 4 V; Turn-on time Turn-off storage time Turn-off fall time Switching times (inductive load) tsi tfi Turn-off storage time Turn-off fall time Switching times (inductive load) tsi tfi Turn-off storage time Turn-off fall time ICon = 2.5 A; IBon = 0.5 A; LB = 1 µH; -VBB = 5 V ICon = 2.5 A; IBon = 0.5 A; LB = 1 µH; -VBB = 5 V; Tj = 100 ˚C 1 Fig. 14 without clamping voltage (VCL). Probe point is used to measure the BVCE at avalanche. 2 Measured with half sine-wave voltage (curve tracer). November 1999 2 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ403BX ICon 90 % + 50v 100-200R 90 % IC 10 % ts Horizontal ton tf toff Oscilloscope IBon IB Vertical 10 % 300R 1R tr 30ns 6V 30-60 Hz -IBoff Fig.4. Switching times waveforms with resistive load. Fig.1. Test circuit for VCEOsust. VCC IC / mA LC 250 IBon 100 LB T.U.T. 10 0 -VBB min VCE / V VCEOsust Fig.2. Oscilloscope display for VCEOsust. Fig.5. Test circuit inductive load. VCC = 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH VCC ICon 90 % IC RL VIM 10 % RB 0 T.U.T. ts toff tp IB tf t IBon T t -IBoff Fig.6. Switching times waveforms with inductive load. Fig.3. Test circuit resistive load. VIM = -6 to +8 V VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements. November 1999 3 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor 120 BUJ403BX Normalised Power Derating PD% VCEsat/V 2.0 110 100 90 1.6 80 IC=1A IC=1A 70 2A 3A 4A 1.2 60 50 0.8 40 30 20 10 0.4 0 0 20 40 60 80 100 Tmb / C 120 140 0.0 0.01 0.10 1.00 IB/A 10.00 Fig.10. Collector-Emitter saturation voltage. Solid lines = typ values, VCEsat = f(IB); Tj=25˚C. Fig.7. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Ths) VBESAT/V 1.4 HFE 80 125 C 50 1.2 30 20 -40 C Tj=25 C 15 1 10 -40C 5 0.8 25C 2 0.6 0.01 0.05 0.1 0.3 IC/A 1 2 3 5 10 Tj = 100C 0.1 Fig.8. Typical DC current gain. hFE = f(IC) parameter VCE = 1V 0.5 5 2 1 IC/A 10 Fig.11. Base-Emitter saturation voltage. Solid lines = typ values, VBEsat = f(IC); at IC/IB =4. VCESAT/V 0.6 HFE 80 125 C 50 0.5 30 20 Tj = 100C -40 C Tj=25 C 0.4 15 10 0.3 5 25C 0.2 -40C 0.1 2 0.01 0.05 0.1 0.5 1 2 3 5 0 0.2 10 IC/A Fig.9. Typical DC current gain. hFE = f(IC) parameter VCE = 5V November 1999 0.4 0.6 1 IC/A 2 5 6 Fig.12. Collector-Emitter saturation voltage. Solid lines = typ values, VCEsat = f(IC); at IC/IB =4.8 4 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor 10 Zth / (K/W) BUJ403BX BU1706AX VCC 0.5 1 0.1 0.2 0.1 0.05 LC 0.02 VCL(RBSOAR) PD tp D= tp IBon T PROBE POINT LB 0.01 D=0 0.001 1u t T 10u 100u 1m 10m 100m t/s 1 10 -VBB T.U.T. 100 Fig.13. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T Fig.15. Test circuit for reverse bias safe operating area. Vcl ≤ 1200V; Vcc = 150V; VBB = -5V; LB = 1µH;Lc = 200µH IC (A) 11 10 9 8 7 6 5 4 3 2 1 0 0 200 400 600 800 1,000 1,200 1,400 VCEclamp (V) Fig.14. Reverse bias safe operating area. Tj ≤ Tj max November 1999 5 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ403BX MECHANICAL DATA Dimensions in mm Net Mass: 2 g 10.3 max 4.6 max 3.2 3.0 2.9 max 2.8 Recesses (2x) 2.5 0.8 max. depth 6.4 15.8 19 max. max. 15.8 max seating plane 3 max. not tinned 3 2.5 13.5 min. 1 0.4 2 3 M 1.0 (2x) 0.6 2.54 0.9 0.7 0.5 2.5 5.08 1.3 Fig.16. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". November 1999 6 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ403BX DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1999 7 Rev 1.100