To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. “High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support. “Specific”: Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. H5N2801P Silicon N Channel MOS FET High Speed Power Switching REJ03G0118-0100Z Rev.1.00 Oct.01.2003 Features • Low on-resistance • Low drive current • High speed switching Outline TO-3P D G 1 S Rev.1.00, Oct.01.2003, page 1 of 9 2 3 1. Gate 2. Drain (Flange) 3. Source H5N2801P Absolute Maximum Rating (Ta = 25°C) Item Symbol Rating Unit Drain to source voltage VDSS 280 V Gate to source voltage VGSS ±30 V Drain current ID 60 A Drain peak current ID (pulse)Note1 240 A Body-drain diode reverse drain current IDR 60 A Avalanche current IAPNote3 35 A Avalanche energy Note3 EAR 74.5 mJ 150 W Channel dissipation Pch Note2 Channel to case thermal impedance θch-c 0.833 °C /W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Rev.1.00, Oct.01.2003, page 2 of 9 H5N2801P Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test condition Drain to Source breakdown voltage V(BR)DSS 280 — — V ID = 10 mA, VGS = 0 Zero gate voltage drain current IDSS — — 1 µA VDS = 280 V, VGS = 0 Gate to source leak current IGSS — — ±0.1 µA VGS = ±30 V, VDS = 0 Gate to source cutoff voltage VGS(off) 3.0 — 4.5 V VDS = 10 V, ID = 1 mA Forward transfer admittance |yfs| 27 45 — S ID = 30 A, VDS = 10 VNote4 Static drain to source on state resistance RDS(on) — 0.034 0.043 Ω ID = 30 A, VGS = 10 VNote4 Input capacitance Ciss — 5400 — pF Output capacitance Coss — 770 — pF VDS = 25 V VGS = 0 f = 1 MHz Reverse transfer capacitance Crss — 100 — pF Turn-on delay time td(on) — 70 — ns Rise time tr — 300 — ns Turn-off delay time td(off) — 250 — ns Fall time tf — 210 — ns Total gate charge Qg — 148 — nC ID = 30 A RL = 4.7 Ω VGS = 10 V Rg = 10 Ω VDD = 220 V VGS = 10 V ID = 60 A Gate to source charge Qgs — 30 — nC Gate to drain charge Qgd — 73 — nC Body-drain diode forward voltage VDF — 1.10 1.65 V IF = 60 A, VGS = 0Note4 Body-drain diode reverse recovery trr time — 270 — ns IF = 60 A, VGS = 0 diF/dt = 100 A/µs Body-drain diode reverse recovery Qrr charge — 2.8 — µC Notes: 4. Pulse test Rev.1.00, Oct.01.2003, page 3 of 9 H5N2801P Main Characteristics Power vs. Temperature Derating ID (A) 300 150 Drain Current Pch (W) Channel Dissipation Maximum Safe Operation Area 1000 200 100 50 100 PW DC 30 er 10 = 10 m s( 1s at ion 3 Operation in ho t) (T 25 1 this area is °C ) limited by RDS(on) 0.3 0 50 100 150 Case Temperature Ta = 25°C 200 1 Tc (°C) 10 V 8V 7V 200 6.5 V Pulse Test 6V 40 5.5 V 20 Drain Current ID (A) 80 60 4 8 12 Drain to Source Voltage Rev.1.00, Oct.01.2003, page 4 of 9 16 20 VDS (V) VDS = 10 V Pulse Test 160 120 80 40 VGS = 5 V 0 30 3 10 100 300 1000 Drain to Source Voltage VDS (V) Typical Transfer Characteristics Typical Output Characteristics 100 ID (A) µ 0µ s 1m s s c= 0.1 Drain Current Op 10 10 Tc = 75°C 25°C –25°C 0 2 4 6 Gate to Source Voltage 8 10 VGS (V) H5N2801P Pulse Test 4 3 2 30 A 1 10 A 12 4 8 Gate to Source Voltage 16 20 VGS (V) Static Drain to Source on State Resistance vs. Temperature 0.1 Pulse Test 0.08 0.02 0.01 0 Static Drain to Source on State Resistance RDS(on) (Ω) Static Drain to Source on State Resistance vs. Drain Current 0.2 Pulse Test VGS = 10 V,15 V 0.1 0.05 I D = 60 A VGS = 10 V ID = 60 A 30 A 0.06 10 A 0.04 0.02 0 –40 0 40 80 120 Case Temperature Tc (°C) Rev.1.00, Oct.01.2003, page 5 of 9 160 1 2 5 10 20 50 Drain Current ID (A) 100 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Drain to Source Saturation Voltage VDS(on) (V) 5 Drain to Source on State Resistance RDS(on) (Ω) Drain to Source Saturation Voltage vs. Gate to Source Voltage 100 50 Tc = –25°C 20 10 25°C 5 75°C 2 1 VDS = 10 V Pulse Test 0.5 0.2 0.2 0.5 1 2 5 10 20 Drain Current ID (A) 50 100 H5N2801P Typical Capacitance vs. Drain to Source Voltage Body-Drain Diode Reverse Recovery Time 500 20000 Capacitance C (pF) 50000 Reverse Recovery Time trr (ns) 1000 200 100 50 20 10 0.1 VGS = 0 f = 1 MHz 10000 di / dt = 100 A / µs VGS = 0, Ta = 25°C Ciss 5000 2000 1000 Coss 500 200 100 Crss 50 0 0.3 1 3 10 30 100 Reverse Drain Current IDR (A) 20 40 60 Drain to Source Voltage 400 VDS = 50 V 100 V 220 V 300 VGS 16 12 VDD 200 100 0 8 VDS = 220 V 100 V 50 V 40 80 120 160 Gate Charge Qg (nC) Rev.1.00, Oct.01.2003, page 6 of 9 4 0 200 Switching Characteristics 10000 Switching Time t (ns) ID = 60 A Gate to Source Voltage VDS (V) Drain to Source Voltage 20 VGS (V) Dynamic Input Characteristics 500 80 100 VDS (V) VGS = 10 V, VDD = 140 V PW = 5 µs, duty < 1 % RG =10 Ω tf 1000 tr td(off) tf 100 td(on) tr 10 0.1 0.3 1 3 Drain Current 10 30 ID (A) 100 H5N2801P Gate to Source Cutoff Voltage vs. Case Temperature Reverse Drain Current vs. Source to Drain Voltage 5 Gate to Source Cutoff Voltage V GS(off) (V) Reverse Drain Current IDR (A) 100 80 60 VGS = 0 V 40 20 10 V 5V Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 VDS = 10 V ID = 10mA 4 3 1mA 0.1mA 2 1 0 -50 0 50 100 Case Temperature VSD (V) Switching Time Test Circuit 150 Waveform Vout Monitor Vin Monitor 200 Tc (°C) 90% D.U.T. RL Vin 10Ω Vin 10 V V DD = 140 V Vout 10% 10% 90% td(on) Rev.1.00, Oct.01.2003, page 7 of 9 tr 10% 90% td(off) tf H5N2801P Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θch – c(t) = γs (t) • θch – c θch – c = 0.833°C/W, Tc = 25°C 0.1 0.05 PDM 0.03 0.02 1 0.0 0.01 10 µ lse t ho T 1s Rev.1.00, Oct.01.2003, page 8 of 9 PW T PW pu 100 µ D= 1m 10 m 100 m Pulse Width PW (s) 1 10 H5N2801P Package Dimensions 15.6 ± 0.3 Unit: mm 1.5 0.3 19.9 ± 0.2 2.0 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 5.0 ± 0.3 As of January, 2003 4.8 ± 0.2 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Package Code JEDEC JEITA Mass (reference value) Rev.1.00, Oct.01.2003, page 9 of 9 TO-3P — Conforms 5.0 g Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. 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