Renesas H5N2801P Silicon n channel mos fet high speed power switching Datasheet

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H5N2801P
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0118-0100Z
Rev.1.00
Oct.01.2003
Features
• Low on-resistance
• Low drive current
• High speed switching
Outline
TO-3P
D
G
1
S
Rev.1.00, Oct.01.2003, page 1 of 9
2
3
1. Gate
2. Drain (Flange)
3. Source
H5N2801P
Absolute Maximum Rating
(Ta = 25°C)
Item
Symbol
Rating
Unit
Drain to source voltage
VDSS
280
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
60
A
Drain peak current
ID (pulse)Note1
240
A
Body-drain diode reverse drain
current
IDR
60
A
Avalanche current
IAPNote3
35
A
Avalanche energy
Note3
EAR
74.5
mJ
150
W
Channel dissipation
Pch
Note2
Channel to case thermal impedance θch-c
0.833
°C /W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Rev.1.00, Oct.01.2003, page 2 of 9
H5N2801P
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test condition
Drain to Source breakdown
voltage
V(BR)DSS
280
—
—
V
ID = 10 mA, VGS = 0
Zero gate voltage drain current
IDSS
—
—
1
µA
VDS = 280 V, VGS = 0
Gate to source leak current
IGSS
—
—
±0.1
µA
VGS = ±30 V, VDS = 0
Gate to source cutoff voltage
VGS(off)
3.0
—
4.5
V
VDS = 10 V, ID = 1 mA
Forward transfer admittance
|yfs|
27
45
—
S
ID = 30 A, VDS = 10 VNote4
Static drain to source on state
resistance
RDS(on)
—
0.034
0.043
Ω
ID = 30 A, VGS = 10 VNote4
Input capacitance
Ciss
—
5400
—
pF
Output capacitance
Coss
—
770
—
pF
VDS = 25 V
VGS = 0
f = 1 MHz
Reverse transfer capacitance
Crss
—
100
—
pF
Turn-on delay time
td(on)
—
70
—
ns
Rise time
tr
—
300
—
ns
Turn-off delay time
td(off)
—
250
—
ns
Fall time
tf
—
210
—
ns
Total gate charge
Qg
—
148
—
nC
ID = 30 A
RL = 4.7 Ω
VGS = 10 V
Rg = 10 Ω
VDD = 220 V
VGS = 10 V
ID = 60 A
Gate to source charge
Qgs
—
30
—
nC
Gate to drain charge
Qgd
—
73
—
nC
Body-drain diode forward voltage
VDF
—
1.10
1.65
V
IF = 60 A, VGS = 0Note4
Body-drain diode reverse recovery trr
time
—
270
—
ns
IF = 60 A, VGS = 0
diF/dt = 100 A/µs
Body-drain diode reverse recovery Qrr
charge
—
2.8
—
µC
Notes: 4. Pulse test
Rev.1.00, Oct.01.2003, page 3 of 9
H5N2801P
Main Characteristics
Power vs. Temperature Derating
ID (A)
300
150
Drain Current
Pch (W)
Channel Dissipation
Maximum Safe Operation Area
1000
200
100
50
100
PW
DC
30
er
10
=
10
m
s(
1s
at
ion
3
Operation in
ho
t)
(T
25
1 this area is
°C
)
limited by RDS(on)
0.3
0
50
100
150
Case Temperature
Ta = 25°C
200
1
Tc (°C)
10 V
8V
7V
200
6.5 V
Pulse Test
6V
40
5.5 V
20
Drain Current
ID (A)
80
60
4
8
12
Drain to Source Voltage
Rev.1.00, Oct.01.2003, page 4 of 9
16
20
VDS (V)
VDS = 10 V
Pulse Test
160
120
80
40
VGS = 5 V
0
30
3
10
100 300 1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
Typical Output Characteristics
100
ID (A)
µ
0µ s
1m
s
s
c=
0.1
Drain Current
Op
10
10
Tc = 75°C
25°C
–25°C
0
2
4
6
Gate to Source Voltage
8
10
VGS (V)
H5N2801P
Pulse Test
4
3
2
30 A
1
10 A
12
4
8
Gate to Source Voltage
16
20
VGS (V)
Static Drain to Source on State Resistance
vs. Temperature
0.1
Pulse Test
0.08
0.02
0.01
0
Static Drain to Source on State Resistance
RDS(on) (Ω)
Static Drain to Source on State Resistance
vs. Drain Current
0.2
Pulse Test
VGS = 10 V,15 V
0.1
0.05
I D = 60 A
VGS = 10 V
ID = 60 A
30 A
0.06
10 A
0.04
0.02
0
–40
0
40
80
120
Case Temperature Tc (°C)
Rev.1.00, Oct.01.2003, page 5 of 9
160
1
2
5
10 20
50
Drain Current ID (A)
100
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Drain to Source Saturation Voltage
VDS(on) (V)
5
Drain to Source on State Resistance
RDS(on) (Ω)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
100
50
Tc = –25°C
20
10
25°C
5
75°C
2
1
VDS = 10 V
Pulse Test
0.5
0.2
0.2
0.5 1
2
5
10 20
Drain Current
ID (A)
50 100
H5N2801P
Typical Capacitance vs.
Drain to Source Voltage
Body-Drain Diode Reverse
Recovery Time
500
20000
Capacitance C (pF)
50000
Reverse Recovery Time trr (ns)
1000
200
100
50
20
10
0.1
VGS = 0
f = 1 MHz
10000
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
Ciss
5000
2000
1000
Coss
500
200
100
Crss
50
0
0.3
1
3
10
30
100
Reverse Drain Current IDR (A)
20
40
60
Drain to Source Voltage
400
VDS = 50 V
100 V
220 V
300
VGS
16
12
VDD
200
100
0
8
VDS = 220 V
100 V
50 V
40
80
120
160
Gate Charge Qg (nC)
Rev.1.00, Oct.01.2003, page 6 of 9
4
0
200
Switching Characteristics
10000
Switching Time t (ns)
ID = 60 A
Gate to Source Voltage
VDS (V)
Drain to Source Voltage
20
VGS (V)
Dynamic Input Characteristics
500
80
100
VDS (V)
VGS = 10 V, VDD = 140 V
PW = 5 µs, duty < 1 %
RG =10 Ω
tf
1000
tr
td(off)
tf
100
td(on)
tr
10
0.1
0.3
1
3
Drain Current
10
30
ID (A)
100
H5N2801P
Gate to Source Cutoff Voltage
vs. Case Temperature
Reverse Drain Current vs.
Source to Drain Voltage
5
Gate to Source Cutoff Voltage
V GS(off) (V)
Reverse Drain Current
IDR (A)
100
80
60
VGS = 0 V
40
20
10 V
5V
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
VDS = 10 V
ID = 10mA
4
3
1mA
0.1mA
2
1
0
-50
0
50
100
Case Temperature
VSD (V)
Switching Time Test Circuit
150
Waveform
Vout
Monitor
Vin Monitor
200
Tc (°C)
90%
D.U.T.
RL
Vin
10Ω
Vin
10 V
V DD
= 140 V
Vout
10%
10%
90%
td(on)
Rev.1.00, Oct.01.2003, page 7 of 9
tr
10%
90%
td(off)
tf
H5N2801P
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θch – c(t) = γs (t) • θch – c
θch – c = 0.833°C/W, Tc = 25°C
0.1
0.05
PDM
0.03
0.02
1
0.0
0.01
10 µ
lse
t
ho
T
1s
Rev.1.00, Oct.01.2003, page 8 of 9
PW
T
PW
pu
100 µ
D=
1m
10 m
100 m
Pulse Width PW (s)
1
10
H5N2801P
Package Dimensions
15.6 ± 0.3
Unit: mm
1.5
0.3
19.9 ± 0.2
2.0
14.9 ± 0.2
0.5
1.0
φ3.2 ± 0.2
5.0 ± 0.3
As of January, 2003
4.8 ± 0.2
1.6
2.0
1.4 Max
18.0 ± 0.5
2.8
1.0 ± 0.2
3.6
0.6 ± 0.2
0.9
1.0
5.45 ± 0.5
5.45 ± 0.5
Package Code
JEDEC
JEITA
Mass (reference value)
Rev.1.00, Oct.01.2003, page 9 of 9
TO-3P
—
Conforms
5.0 g
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Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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