DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 22 Philips Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package. • Small size discrete power amplifier • 900 MHz and 1.9 GHz operating areas • Gold metallization ensures excellent reliability. fpage 4 3 1 2 PINNING APPLICATIONS • Common emitter class-AB operation in hand-held radio equipment up to 1.9 GHz. PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter Top view MBK523 Marking code: T5. Fig.1 SOT343. QUICK REFERENCE DATA RF performance at Tamb = 25 °C in a common-emitter test circuit. f (GHz) VCE (V) PL (mW) Gp (dB) ηc (%) Pulsed, class-AB, duty cycle: < 1 : 2; tp = 10 ms 1.9 3.6 200 ≥5 ≥50 Pulsed, class-AB, duty cycle: < 1 : 8; tp = 4.6 ms 0.9 6 650 ≥10 ≥50 0.9 6 360 ≥12.5 ≥50 MODE OF OPERATION LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 10 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 250 mA IC(AV) average collector current − 250 mA Ptot total power dissipation − 400 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C up to Ts = 102 °C; note 1 THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 102 °C; note 1; Ptot = 400 mW Note to the Limiting values and Thermal characteristics 1. Ts is the temperature at the soldering point of the collector pin. 1995 Sep 22 2 VALUE UNIT 180 K/W Philips Semiconductors Product specification UHF power transistor BFG10W/X CHARACTERISTICS Tj = 25 °C (unless otherwise specified). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT − V(BR)CBO collector-base breakdown voltage open emitter; IC = 0.1 mA 20 V V(BR)CEO collector-emitter breakdown voltage open base; IC = 5 mA 10 − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 0.1 mA 2.5 − V ICES collector cut-off current VCE = 6 V; VBE = 0 − 100 µA hFE DC current gain IC = 50 mA; VCE = 5 V 25 − Cc collector capacitance IE = ie = 0; VCB = 6 V; f = 1 MHz − 3 pF Cre feedback capacitance IC = 0; VCE = 6 V; f = 1 MHz − 2 pF MBG431 103 handbook, full pagewidth Zth j-a (K/W) δ=1 0.75 102 0.5 0.33 0.2 10 0.1 0.05 0.02 0.01 tp δ= T P t tp T 1 10−6 10−5 10−4 10−3 10−2 10−1 tp (s) 1 Fig.2 Transient thermal impedance from junction to soldering point as a function of pulse time; typical values. 1995 Sep 22 3 Philips Semiconductors Product specification UHF power transistor BFG10W/X MLC819 2.0 handbook, halfpage Cc (pF) 1.5 1.0 0.5 0 0 Fig.3 1995 Sep 22 2 4 6 8 10 V CB (V) Collector capacitance as a function of collector-base voltage. 4 Philips Semiconductors Product specification UHF power transistor BFG10W/X APPLICATION INFORMATION RF performance at Tamb = 25 °C in a common-emitter test circuit. MODE OF OPERATION f (GHz) VCE (V) PL (mW) Gp (dB) ηc (%) Pulsed, class-AB, duty cycle: < 1 : 2; tp = 10 ms 1.9 3.6 200 ≥5; typ. 7 ≥50; typ. 60 Pulsed, class-AB, duty cycle: < 1 : 8; tp = 5 ms 0.9 6 650 ≥10 ≥50 360 ≥12.5 ≥50 0.9 6 Ruggedness in class-AB operation The BFG10W/X is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under pulsed conditions up to a supply voltage of 8.6 V under the conditions: 900 MHz; 650 mW; tp = 4.6 ms; duty cycle of 1 : 8 and up to a supply voltage of 5.5 V under the conditions: 1.9 GHz; 200 mW; tp = 10 ms; duty cycle of 1 : 2. MLC820 10 handbook, halfpage Gp ηc (dB) 8 MBG194 100 ηc 80 16 handbook, halfpage Gp (%) Gp (dB) 80 12 Gp 6 60 4 40 2 20 0 0 100 200 300 1995 Sep 22 8 40 4 20 0 0.3 0 400 500 P L (mW) Pulsed, class-AB operation. VCE = 3.6 V; f = 1.9 GHz; duty cycle < 1 : 2. Circuit optimized for PL = 200 mW. Fig.4 60 ηc 20 0.5 0.7 0.9 1.1 P L (mW) Pulsed, class-AB operation. VCE = 6 V; f = 900 MHz; duty cycle < 1 : 8. Circuit optimized for PL = 600 mW. Power gain and efficiency as functions of load power; typical values. Fig.5 5 Power gain and efficiency as functions of load power; typical values. ηc (%) Philips Semiconductors Product specification UHF power transistor BFG10W/X List of components (see Fig.6) COMPONENT DESCRIPTION VALUE DIMENSIONS TR1 bias transistor, BC548 or equivalent note 1 C1, C4, C7 capacitor; notes 2 and 3 120 pF C2 capacitor; note 2 6.8 pF C3 capacitor; note 2 0.5 pF C5 capacitor; note 2 1.2 pF C6 capacitor; note 2 1.9 pF C8 Philips multilayer capacitor 1 nF, 10 V 1500 µF, 10 V C9 Philips capacitor L1 6 turns enamelled 0.7 mm copper wire length 3.5 mm L4 2 turns enamelled 0.7 mm copper wire length 3 mm L2, L3 RF choke, Philips R1 metal film resistor 275 Ω R2 metal film resistor 100 Ω R3 metal film resistor 10 Ω 2222 032 14152 4312 020 36690 Notes 1. VBE at 1 mA must be 0.65 V. 2. American Technical Ceramics type 100A or capacitor of same quality. 3. Resonant at 1900 MHz. +Vbias handbook, full pagewidth +VCC R1 R2 C9 L3 R3 TR1 L2 C4 C8 L4 L1 C1 C7 DUT C2 C3 C5 C6 MBG428 PCB RT5880, thickness 0.79 mm. Fig.6 Class-AB test circuit at f = 900 MHz. 1995 Sep 22 CATALOGUE No. 6 Philips Semiconductors Product specification UHF power transistor BFG10W/X List of components (see Fig.7) COMPONENT DESCRIPTION VALUE DIMENSIONS TR1 bias transistor, BC548 or equivalent note 1 C1, C6, C7, C8 capacitor; notes 2 and 3 24 pF C2 capacitor; note 2 0.4 pF C3 capacitor; note 2 2.4 pF C4 capacitor; note 2 0.5 pF C5 capacitor; note 2 1.2 pF C9, C10 Philips capacitor 1500 µF, 10 V L1, L2 RF choke, Philips R1, R2 metal film resistor 75 Ω R3, R4 metal film resistor 10 Ω 2222 032 14152 4330 030 36301 Notes 1. VBE at 1 mA must be 0.65 V. 2. American Technical Ceramics type 100A or capacitor of same quality. 3. Resonant at 1900 MHz. handbook, full pagewidth +Vbias R1 L1 R2 L2 +VCC TR1 C9 C10 C7 C8 C6 C1 DUT C2 C3 C4 C5 MBG429 PCB RT5880, thickness 0.79 mm. Fig.7 Class-AB test circuit at f = 1.9 GHz. 1995 Sep 22 CATALOGUE No. 7 Philips Semiconductors Product specification UHF power transistor BFG10W/X PACKAGE OUTLINE handbook, full pagewidth 0.2 M A 0.4 0.2 0.2 M B 4 3 1.00 max 0.2 A 1.35 1.15 2.2 2.0 1 0.7 0.5 0.3 0.1 2 0.25 0.10 1.4 1.2 2.2 1.8 B Dimensions in mm. Fig.8 SOT343. 1995 Sep 22 0.1 max 8 MSB374 Philips Semiconductors Product specification UHF power transistor BFG10W/X DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Sep 22 9