PHILIPS BFG10/X Uhf power transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BFG10W/X
UHF power transistor
Product specification
File under Discrete Semiconductors, SC14
1995 Sep 22
Philips Semiconductors
Product specification
UHF power transistor
BFG10W/X
FEATURES
DESCRIPTION
• High efficiency
NPN silicon planar epitaxial transistor
encapsulated in a plastic, 4-pin
dual-emitter SOT343 package.
• Small size discrete power amplifier
• 900 MHz and 1.9 GHz operating
areas
• Gold metallization ensures
excellent reliability.
fpage
4
3
1
2
PINNING
APPLICATIONS
• Common emitter class-AB
operation in hand-held radio
equipment up to 1.9 GHz.
PIN
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
Top view
MBK523
Marking code: T5.
Fig.1 SOT343.
QUICK REFERENCE DATA
RF performance at Tamb = 25 °C in a common-emitter test circuit.
f
(GHz)
VCE
(V)
PL
(mW)
Gp
(dB)
ηc
(%)
Pulsed, class-AB, duty cycle: < 1 : 2; tp = 10 ms
1.9
3.6
200
≥5
≥50
Pulsed, class-AB, duty cycle: < 1 : 8; tp = 4.6 ms
0.9
6
650
≥10
≥50
0.9
6
360
≥12.5
≥50
MODE OF OPERATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
10
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
collector current (DC)
−
250
mA
IC(AV)
average collector current
−
250
mA
Ptot
total power dissipation
−
400
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
175
°C
up to Ts = 102 °C; note 1
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to Ts = 102 °C; note 1;
Ptot = 400 mW
Note to the Limiting values and Thermal characteristics
1. Ts is the temperature at the soldering point of the collector pin.
1995 Sep 22
2
VALUE
UNIT
180
K/W
Philips Semiconductors
Product specification
UHF power transistor
BFG10W/X
CHARACTERISTICS
Tj = 25 °C (unless otherwise specified).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
−
V(BR)CBO
collector-base breakdown voltage
open emitter; IC = 0.1 mA
20
V
V(BR)CEO
collector-emitter breakdown voltage
open base; IC = 5 mA
10
−
V
V(BR)EBO
emitter-base breakdown voltage
open collector; IE = 0.1 mA
2.5
−
V
ICES
collector cut-off current
VCE = 6 V; VBE = 0
−
100
µA
hFE
DC current gain
IC = 50 mA; VCE = 5 V
25
−
Cc
collector capacitance
IE = ie = 0; VCB = 6 V; f = 1 MHz
−
3
pF
Cre
feedback capacitance
IC = 0; VCE = 6 V; f = 1 MHz
−
2
pF
MBG431
103
handbook, full pagewidth
Zth j-a
(K/W)
δ=1
0.75
102
0.5
0.33
0.2
10
0.1
0.05
0.02
0.01
tp
δ= T
P
t
tp
T
1
10−6
10−5
10−4
10−3
10−2
10−1
tp (s)
1
Fig.2 Transient thermal impedance from junction to soldering point as a function of pulse time; typical values.
1995 Sep 22
3
Philips Semiconductors
Product specification
UHF power transistor
BFG10W/X
MLC819
2.0
handbook, halfpage
Cc
(pF)
1.5
1.0
0.5
0
0
Fig.3
1995 Sep 22
2
4
6
8
10
V CB (V)
Collector capacitance as a function of
collector-base voltage.
4
Philips Semiconductors
Product specification
UHF power transistor
BFG10W/X
APPLICATION INFORMATION
RF performance at Tamb = 25 °C in a common-emitter test circuit.
MODE OF OPERATION
f
(GHz)
VCE
(V)
PL
(mW)
Gp
(dB)
ηc
(%)
Pulsed, class-AB, duty cycle: < 1 : 2; tp = 10 ms
1.9
3.6
200
≥5; typ. 7
≥50; typ. 60
Pulsed, class-AB, duty cycle: < 1 : 8; tp = 5 ms
0.9
6
650
≥10
≥50
360
≥12.5
≥50
0.9
6
Ruggedness in class-AB operation
The BFG10W/X is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under
pulsed conditions up to a supply voltage of 8.6 V under the conditions: 900 MHz; 650 mW; tp = 4.6 ms; duty cycle of 1 : 8
and up to a supply voltage of 5.5 V under the conditions: 1.9 GHz; 200 mW; tp = 10 ms; duty cycle of 1 : 2.
MLC820
10
handbook, halfpage
Gp
ηc
(dB)
8
MBG194
100
ηc
80
16
handbook, halfpage
Gp
(%)
Gp
(dB)
80
12
Gp
6
60
4
40
2
20
0
0
100
200
300
1995 Sep 22
8
40
4
20
0
0.3
0
400
500
P L (mW)
Pulsed, class-AB operation.
VCE = 3.6 V; f = 1.9 GHz; duty cycle < 1 : 2.
Circuit optimized for PL = 200 mW.
Fig.4
60
ηc
20
0.5
0.7
0.9
1.1
P L (mW)
Pulsed, class-AB operation.
VCE = 6 V; f = 900 MHz; duty cycle < 1 : 8.
Circuit optimized for PL = 600 mW.
Power gain and efficiency as functions
of load power; typical values.
Fig.5
5
Power gain and efficiency as functions
of load power; typical values.
ηc
(%)
Philips Semiconductors
Product specification
UHF power transistor
BFG10W/X
List of components (see Fig.6)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
TR1
bias transistor, BC548 or equivalent
note 1
C1, C4, C7
capacitor; notes 2 and 3
120 pF
C2
capacitor; note 2
6.8 pF
C3
capacitor; note 2
0.5 pF
C5
capacitor; note 2
1.2 pF
C6
capacitor; note 2
1.9 pF
C8
Philips multilayer capacitor
1 nF, 10 V
1500 µF, 10 V
C9
Philips capacitor
L1
6 turns enamelled 0.7 mm copper wire
length 3.5 mm
L4
2 turns enamelled 0.7 mm copper wire
length 3 mm
L2, L3
RF choke, Philips
R1
metal film resistor
275 Ω
R2
metal film resistor
100 Ω
R3
metal film resistor
10 Ω
2222 032 14152
4312 020 36690
Notes
1. VBE at 1 mA must be 0.65 V.
2. American Technical Ceramics type 100A or capacitor of same quality.
3. Resonant at 1900 MHz.
+Vbias
handbook, full pagewidth
+VCC
R1
R2
C9
L3
R3
TR1
L2
C4
C8
L4
L1
C1
C7
DUT
C2
C3
C5
C6
MBG428
PCB RT5880, thickness 0.79 mm.
Fig.6 Class-AB test circuit at f = 900 MHz.
1995 Sep 22
CATALOGUE No.
6
Philips Semiconductors
Product specification
UHF power transistor
BFG10W/X
List of components (see Fig.7)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
TR1
bias transistor, BC548 or equivalent
note 1
C1, C6, C7, C8
capacitor; notes 2 and 3
24 pF
C2
capacitor; note 2
0.4 pF
C3
capacitor; note 2
2.4 pF
C4
capacitor; note 2
0.5 pF
C5
capacitor; note 2
1.2 pF
C9, C10
Philips capacitor
1500 µF, 10 V
L1, L2
RF choke, Philips
R1, R2
metal film resistor
75 Ω
R3, R4
metal film resistor
10 Ω
2222 032 14152
4330 030 36301
Notes
1. VBE at 1 mA must be 0.65 V.
2. American Technical Ceramics type 100A or capacitor of same quality.
3. Resonant at 1900 MHz.
handbook, full pagewidth
+Vbias
R1
L1
R2
L2
+VCC
TR1
C9
C10
C7
C8
C6
C1
DUT
C2
C3
C4
C5
MBG429
PCB RT5880, thickness 0.79 mm.
Fig.7 Class-AB test circuit at f = 1.9 GHz.
1995 Sep 22
CATALOGUE No.
7
Philips Semiconductors
Product specification
UHF power transistor
BFG10W/X
PACKAGE OUTLINE
handbook, full pagewidth
0.2 M A
0.4
0.2
0.2 M B
4
3
1.00
max
0.2
A
1.35
1.15
2.2
2.0
1
0.7
0.5
0.3
0.1
2
0.25
0.10
1.4
1.2
2.2
1.8
B
Dimensions in mm.
Fig.8 SOT343.
1995 Sep 22
0.1
max
8
MSB374
Philips Semiconductors
Product specification
UHF power transistor
BFG10W/X
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1995 Sep 22
9
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